Anti-Penetration Films for Precise Semiconductor Patterning
Here’s PatSnap Eureka !
Summary
Problems
In semiconductor fabrication, acid generated during the formation of a photoresist pattern can diffuse to underlying films, causing pattern defects and deteriorating the dimensional accuracy of the photoresist pattern, which leads to improper formation of semiconductor devices.
Innovation solutions
A semiconductor structure and method that includes an anti-reflective coating with silsesquioxane resin and an anti-penetration film with a net structure, which prevents acid diffusion by being disposed between the photoresist pattern and the anti-reflective coating, thereby maintaining the pattern profile and adhesion.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If an anti-reflective coating is used to reduce light reflection during exposure, then the quality of photoresist pattern formation is improved, but acid generated during photoresist formation can diffuse to the underlying etch-target layer causing pattern defects
Why choose this principle:
An anti-penetration film with a net structure is introduced as an intermediary layer between the anti-reflective coating and the photoresist pattern. This net structure acts as a barrier that prevents acid generated during photoresist formation from diffusing to the etch-target layer, while allowing the anti-reflective coating to maintain its light reflection reduction function.
Principle concept:
If an anti-reflective coating is used to reduce light reflection during exposure, then the quality of photoresist pattern formation is improved, but acid generated during photoresist formation can diffuse to the underlying etch-target layer causing pattern defects
Why choose this principle:
The anti-reflective coating system is segmented into multiple functional layers: the anti-reflective coating itself and a separate anti-penetration film with net structure. This segmentation allows each layer to perform its specific function independently – the anti-reflective coating reduces light reflection while the anti-penetration film blocks acid diffusion.
Application Domain
Data Source
AI summary:
A semiconductor structure and method that includes an anti-reflective coating with silsesquioxane resin and an anti-penetration film with a net structure, which prevents acid diffusion by being disposed between the photoresist pattern and the anti-reflective coating, thereby maintaining the pattern profile and adhesion.
Abstract
Provided are a semiconductor structure and a method of fabricating a semiconductor device. The method includes: preparing a substrate or an etch-target layer which is to be patterned; forming a first anti-reflective coating, which contains silsesquioxane resin and a cross-linking catalyst, on the substrate or the etch-target layer; forming an anti-penetration film and a second anti-reflective coating by causing a cross-linking reaction in a region of the first anti-reflective coating; and forming a photoresist pattern on the anti-penetration film.