Cavity Substrate Design for High-Density Semiconductor Packaging
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Summary
Problems
Current semiconductor packaging technologies face challenges in achieving higher integration density and functional capabilities due to limitations in manufacturing processes, particularly in creating smaller and more efficient packaging structures for semiconductor dies.
Innovation solutions
The development of a 3D packaging method involving a package substrate with a cavity, where a metal seed layer is formed over a carrier substrate, followed by the creation of conductive and thermal features, and an insulating layer, allowing for the integration of electronic devices and improved thermal dissipation, along with a redistribution layer for electrical connectivity.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If conventional packaging technologies are used to protect semiconductor devices and provide connection interfaces, then device protection and connectivity are achieved, but the package size and height cannot be sufficiently reduced
Why choose this principle:
The patent implements nesting by placing the semiconductor die directly inside a cavity formed in the package substrate. The cavity is etched through the substrate to create a recessed space that accommodates the die, allowing the device to be nested within the substrate structure rather than mounted on top, thereby reducing overall package height and volume while maintaining protection.
Principle concept:
If conventional packaging technologies are used to protect semiconductor devices and provide connection interfaces, then device protection and connectivity are achieved, but the package size and height cannot be sufficiently reduced
Why choose this principle:
The patent transitions from traditional planar mounting to three-dimensional cavity integration. By creating a cavity that extends vertically through the substrate and positioning the die within this recessed space, the design utilizes the vertical dimension more efficiently, reducing the horizontal footprint and overall package volume while maintaining device connectivity and protection.
Application Domain
Data Source
AI summary:
The development of a 3D packaging method involving a package substrate with a cavity, where a metal seed layer is formed over a carrier substrate, followed by the creation of conductive and thermal features, and an insulating layer, allowing for the integration of electronic devices and improved thermal dissipation, along with a redistribution layer for electrical connectivity.
Abstract
A package structure is provided. The package structure includes a substrate including a cavity and a plurality of thermal vias connecting a bottom surface of the cavity to a bottom surface of the substrate. The package structure also includes an electronic device disposed in the cavity and thermally coupled to the plurality of thermal vias. The package structure further includes a plurality of conductive connectors formed over the electronic device and vertically overlapping the plurality of thermal vias. The package structure also includes an encapsulating material extending from top surfaces of the plurality of conductive connectors to the bottom surface of the cavity. The package structure further includes an insulating layer formed over the encapsulating material and including a redistribution layer structure electrically connected to the electronic device through the plurality of conductive connectors.