Efficient Magnetization Reversal for High-Density MRAM
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Summary
Problems
Magnetic random access memory (MRAM) with magnetic tunnel junction (MTJ) elements faces challenges in achieving high density and reducing the current required for writing, as existing technologies struggle to downsize MTJ elements while maintaining efficient magnetization reversal.
Innovation solutions
A magnetic recording element is designed with a stacked structure including ferromagnetic and nonmagnetic layers, where the magnetization of one ferromagnetic layer is fixed perpendicular to the surface, and another is variable, utilizing a rotating magnetic field generated by a third ferromagnetic layer to assist in magnetization reversal, reducing the current needed for writing.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If the MTJ element is downsized to increase memory density, then the memory capacity increases, but the current required for magnetization reversal becomes insufficient
Why choose this principle:
A magnetic field generation source consisting of a third ferromagnetic layer and fourth ferromagnetic layer is introduced as an intermediary component. This source generates a magnetic field that acts on the second ferromagnetic layer (recording layer) to assist magnetization reversal, enabling the writing operation to proceed with lower current through the MTJ element itself
Principle concept:
If the MTJ element is downsized to increase memory density, then the memory capacity increases, but the magnetization reversal efficiency deteriorates
Why choose this principle:
The magnetic field generation source serves as a mediator that provides additional magnetic field assistance during magnetization reversal. The third ferromagnetic layer generates a magnetic field through spin-polarized current that couples with the second ferromagnetic layer, enhancing the reversal process and maintaining high efficiency even in downsized elements
Application Domain
Data Source
AI summary:
A magnetic recording element is designed with a stacked structure including ferromagnetic and nonmagnetic layers, where the magnetization of one ferromagnetic layer is fixed perpendicular to the surface, and another is variable, utilizing a rotating magnetic field generated by a third ferromagnetic layer to assist in magnetization reversal, reducing the current needed for writing.
Abstract
According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.