Electron Multiplier Design for Stable Temperature Performance
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Summary
Problems
Conventional atomic layer deposition (ALD) micro-channel plates (MCPs) using resistance films do not have excellent temperature characteristics, limiting their use in a wide range of operating temperatures, particularly in image intensifiers and mass spectrometers, where resistance value variations affect performance with temperature changes.
Innovation solutions
An electron multiplier structure with a secondary electron emitting layer and a resistance layer, where the resistance layer consists of a single metal layer with metal particles having positive temperature characteristics, arranged two-dimensionally with an insulating material, is used to stabilize resistance values across a wider temperature range.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a resistance layer is formed using the ALD method on a lead-free substrate, then the electron multiplier can be manufactured without lead glass, but the temperature characteristic of the resistance value deteriorates
Why choose this principle:
The patent employs a composite resistance layer structure consisting of multiple metal layers (e.g., Pt, Ir, Mo, W) with different thicknesses and properties. This composite structure allows the resistance layer to maintain stable resistance values across wide temperature ranges while being formed on lead-free substrates using ALD methodology, thus resolving the contradiction between lead-free manufacturing and temperature characteristic reliability.
Principle concept:
If a resistance layer is formed using the ALD method on a lead-free substrate, then the electron multiplier can be manufactured without lead glass, but the temperature characteristic of the resistance value deteriorates
Why choose this principle:
The patent optimizes various parameters including metal layer thicknesses, metal material selections, and ALD process conditions to achieve stable resistance characteristics. By carefully adjusting these parameters, the resistance layer compensates for temperature variations without requiring lead glass, thereby improving temperature characteristics while maintaining lead-free manufacturing capability.
Application Domain
Data Source
AI summary:
An electron multiplier structure with a secondary electron emitting layer and a resistance layer, where the resistance layer consists of a single metal layer with metal particles having positive temperature characteristics, arranged two-dimensionally with an insulating material, is used to stabilize resistance values across a wider temperature range.
Abstract
The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.