Electroplating Solutions for Reliable Semiconductor Pads
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Summary
Problems
The electroless plating method for semiconductor devices is costly and requires extensive pretreatment of the pad, which can lead to issues like spike formation and cavity creation, affecting conduction reliability.
Innovation solutions
A semiconductor device with a semiconductor substrate, insulating film, front surface protection film, seed layer, and plating layer formed by electroplating, eliminating the need for pretreatment and reducing costs.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If electroless plating method is used, then plating can be performed by chemical change, but cost is high and pretreatment is required which causes spike formation and cavity creation
Why choose this principle:
The patent changes the plating method from electroless plating to electroplating, fundamentally altering the deposition mechanism. This parameter change eliminates the need for chemical pretreatment steps like zincate treatment, thereby preventing spike formation and cavity creation while maintaining effective plating coverage
Principle concept:
If electroless plating method is used, then plating can be performed by chemical change, but cost is high and pretreatment is required which causes spike formation and cavity creation
Why choose this principle:
Instead of using electroless plating with chemical reduction, the patent inverts the approach by using electroplating with electrical current-driven deposition. This inversion of the plating mechanism allows direct plating on aluminum pads without requiring the problematic chemical pretreatment steps
Application Domain
Data Source
AI summary:
A semiconductor device with a semiconductor substrate, insulating film, front surface protection film, seed layer, and plating layer formed by electroplating, eliminating the need for pretreatment and reducing costs.
Abstract
A semiconductor device includes a semiconductor substrate with a wiring layer formed thereon, an insulating film formed on the semiconductor substrate so as to cover the wiring layer and having a pad opening exposing a portion of the wiring layer as a pad, a front surface protection film formed on the insulating film and being constituted of an insulating material differing from the insulating film and having a second pad opening securing exposure of at least a portion of the pad, a seed layer formed on the pad, and a plating layer formed on the seed layer.