Gate Stack Design for Low Resistance and Enhanced Transistor Performance
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Summary
Problems
The existing tungsten polysilicon gate structures face challenges with high sheet resistance and contact resistance, particularly when using the Ti/WN diffusion barrier structure, which affects the development of tungsten polysilicon gates and degrades transistor properties due to polysilicon depletion effects.
Innovation solutions
A semiconductor device with a gate stack structure incorporating a Ti/WNx/WSixNy intermediate structure, where a titanium layer, a nitrogen-containing tungsten layer, and a nitrogen-containing tungsten silicide layer are used to form a low sheet resistance and contact resistance, while preventing polysilicon depletion by controlling nitrogen content and layer thickness.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a thin tungsten silicide or titanium layer is formed between the polysilicon layer and the WN layer to prevent Si—N bonds from being formed, then diffusion barrier function is improved, but the complexity of the gate structure is increased
Why choose this principle:
The patent merges the diffusion barrier function and the low sheet resistance function into a single integrated intermediate structure consisting of the Ti/WN layer and TiN layer. This combination eliminates the need for separate diffusion barrier layers and silicide layers, thereby reducing overall structural complexity while maintaining improved diffusion barrier functionality.
Principle concept:
This TRIZ principle provides a structured way to resolve the technical contradiction.
Why choose this principle:
The principle is relevant because it supports the core trade-off described in the patent.
Application Domain
Data Source
AI summary:
A semiconductor device with a gate stack structure incorporating a Ti/WNx/WSixNy intermediate structure, where a titanium layer, a nitrogen-containing tungsten layer, and a nitrogen-containing tungsten silicide layer are used to form a low sheet resistance and contact resistance, while preventing polysilicon depletion by controlling nitrogen content and layer thickness.
Abstract
A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.