Light Blocking Layer Design for Improved TFT-LCD Display Quality
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Summary
Problems
In TFT-LCDs, the reflection of light from non-transparent metal films used in the black matrix can cause dark current, leading to reduced pixel charge retention and image flickering due to light radiation on semiconductor layers, affecting display quality.
Innovation solutions
A light blocking layer is formed on the TFT array substrate to prevent light from reaching the semiconductor layers, comprising a gate light blocking portion and a scanning line light blocking portion, with a gap between them, and a gate electrode connected via a via hole filled with conductive material, forming a double-channel TFT structure to improve conductivity and block light.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a non-transparent metal film is used for the black matrix, then light reflection is enhanced, but dark current increases due to light radiation on semiconductor layers
Why choose this principle:
The invention divides the light blocking function into multiple components: the black matrix on the color filter substrate and a newly introduced light blocking layer on the TFT array substrate. This segmentation allows the light blocking function to be distributed, reducing the harmful light radiation effect on semiconductor layers while maintaining overall light reflection performance.
Principle concept:
If a non-transparent metal film is used for the black matrix, then light reflection is enhanced, but dark current increases due to light radiation on semiconductor layers
Why choose this principle:
The light blocking layer acts as an intermediary element between the black matrix and the semiconductor layers. It intercepts and blocks light before it reaches the semiconductor layers, preventing the generation of dark current while allowing the black matrix to maintain its light reflection function.
Application Domain
Data Source
AI summary:
A light blocking layer is formed on the TFT array substrate to prevent light from reaching the semiconductor layers, comprising a gate light blocking portion and a scanning line light blocking portion, with a gap between them, and a gate electrode connected via a via hole filled with conductive material, forming a double-channel TFT structure to improve conductivity and block light.
Abstract
An array substrate comprises: a base substrate; a gate scanning line, a data scanning line, a pixel electrode and a thin film transistor, formed on the base substrate; and a light blocking layer, formed on the base substrate and corresponding to the thin film transistor and the data scanning line.