Magnetic Memory Device with Domain Wall Control
Here’s PatSnap Eureka !
Summary
Problems
Existing magnetic memory devices using domain wall structures in magnetic wires face challenges in securely fixing the domain wall position due to the need for large currents, which complicates the fabrication of an effective magnetic memory device.
Innovation solutions
A magnetic memory device design that utilizes a magnetic wire with a pair of first electrodes, a first insulating layer, and a plurality of second electrodes, where voltage is applied between the second electrodes and the magnetic wire to control the domain wall position by creating a potential energy profile, allowing the domain wall to be moved and fixed intentionally using current.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If large current is applied to move the domain wall, then the domain wall can be moved to intended position, but the device complexity and energy consumption increase
Why choose this principle:
The magnetic wire is divided into multiple segments by introducing notches at specific positions. These notches create potential energy wells that segment the continuous magnetic wire into discrete regions where domain walls can be stably positioned. This segmentation allows the domain wall to be moved between notches using smaller currents rather than requiring large currents to move it along the entire wire length.
Principle concept:
If large current is applied to move the domain wall, then the domain wall can be moved to intended position, but the device complexity and energy consumption increase
Why choose this principle:
Notches are pre-formed in the magnetic wire during fabrication to create predetermined potential energy wells. This preliminary action establishes fixed positions where domain walls will naturally accumulate, eliminating the need for complex real-time current control to maintain domain wall positions. The notches are created before the device operates, preparing the structure in advance for simplified domain wall manipulation.
Application Domain
Data Source
AI summary:
A magnetic memory device design that utilizes a magnetic wire with a pair of first electrodes, a first insulating layer, and a plurality of second electrodes, where voltage is applied between the second electrodes and the magnetic wire to control the domain wall position by creating a potential energy profile, allowing the domain wall to be moved and fixed intentionally using current.
Abstract
A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.