Close Menu
  • About
  • Products
    • Find Solutions
    • Technical Q&A
    • Novelty Search
    • Feasibility Analysis Assistant
    • Material Scout
    • Pharma Insights Advisor
    • More AI Agents For Innovation
  • IP
  • Machinery
  • Material
  • Life Science
Facebook YouTube LinkedIn
Eureka BlogEureka Blog
  • About
  • Products
    • Find Solutions
    • Technical Q&A
    • Novelty Search
    • Feasibility Analysis Assistant
    • Material Scout
    • Pharma Insights Advisor
    • More AI Agents For Innovation
  • IP
  • Machinery
  • Material
  • Life Science
Facebook YouTube LinkedIn
Patsnap eureka →
Eureka BlogEureka Blog
Patsnap eureka →
Home»TRIZ Case»Magnetic Offset Correction in Semiconductor Devices

Magnetic Offset Correction in Semiconductor Devices

May 22, 20264 Mins Read
Share
Facebook Twitter LinkedIn Email

Magnetic Offset Correction in Semiconductor Devices

Want An AI Powered R&D Assistant ?
Here’s PatSnap Eureka !
Go to Seek

Summary

Problems

Magnetic switches, particularly those using Hall elements, face challenges in maintaining symmetric magnetoelectric conversion characteristics due to offset voltages and magnetic offsets, which can lead to phase and duty ratio shifts in output pulse signals, affecting the performance of brushless direct current (BLDC) motors and magnetic body detection mechanisms.

Innovation solutions

A semiconductor device with a magnetic switch configuration that includes a Hall element, a switch circuit, an amplifier, a comparator, and a latch circuit, which uses a reference voltage circuit to adjust the comparator reference voltage based on control signals, allowing for optimal adjustment of the magnetic offset and improving the symmetric property of magnetoelectric conversion characteristics.

TRIZ Analysis

Specific contradictions:

offset voltage elimination
vs
symmetric property of magnetoelectric conversion characteristic

General conflict description:

Measurement precision
vs
Stability of the object's composition
TRIZ inspiration library
10 Preliminary action
Try to solve problems with it

Principle concept:

If a two-way drive spinning current method is used to eliminate offset voltages, then offset voltage elimination is improved, but symmetric property of magnetoelectric conversion characteristic deteriorates when absolute value of offset voltage differs between current drive directions

Why choose this principle:

The patent applies preliminary action by adjusting the comparator reference voltage before magnetic field detection to compensate for magnetic offsets. The reference voltage adjustment circuit pre-calculates and applies the necessary voltage adjustment based on detected magnetic offset conditions, ensuring symmetric magnetoelectric conversion characteristics are established before actual measurement begins. This prevents the asymmetry that would otherwise occur during two-way drive spinning current operation.

TRIZ inspiration library
35 Parameter changes
Try to solve problems with it

Principle concept:

If a two-way drive spinning current method is used to eliminate offset voltages, then offset voltage elimination is improved, but symmetric property of magnetoelectric conversion characteristic deteriorates when absolute value of offset voltage differs between current drive directions

Why choose this principle:

The patent changes the parameter of comparator reference voltage to compensate for magnetic offsets. By dynamically adjusting the reference voltage level based on the detected magnetic offset conditions, the system maintains symmetric magnetoelectric conversion characteristics even when offset voltages differ between current drive directions. This parameter change allows the system to adapt to varying offset conditions while preserving measurement symmetry.

Application Domain

semiconductor devices magnetic offset reference voltage adjustment

Data Source

Patent US11962302B2 Semiconductor device
Publication Date: 16 Apr 2024 TRIZ 电器元件
FIG 01
US11962302-D00001
FIG 02
US11962302-D00002
FIG 03
US11962302-D00003
Login to view Image

AI summary:

A semiconductor device with a magnetic switch configuration that includes a Hall element, a switch circuit, an amplifier, a comparator, and a latch circuit, which uses a reference voltage circuit to adjust the comparator reference voltage based on control signals, allowing for optimal adjustment of the magnetic offset and improving the symmetric property of magnetoelectric conversion characteristics.

Abstract

A semiconductor device includes a magnetic switch provided on a semiconductor substrate. The magnetic switch includes: a Hall element, first and second power supply terminals; a current source driving the Hall element; a switch circuit switching a differential output voltage supplied from two electrodes of the Hall element to a first or second state based on a control signal supplied from a control terminal; an amplifier amplifying a signal from the switch circuit; a reference voltage circuit generating a reference voltage based on a reference common mode voltage and a control signal; a comparator receiving an output signal of the amplifier and the reference voltage; and a latch circuit latching an output voltage of the comparator. The reference voltage of the reference voltage circuit is controlled by switching from a reference value to a voltage with a high or low adjustment value according to the output voltage of the comparator.

Contents

    Accelerate from idea to impact

    Eureka harnesses unparalleled innovation data and effortlessly delivers breakthrough ideas for your toughest technical challenges.

    Sign up for free
    magnetic offset reference voltage adjustment semiconductor devices
    Share. Facebook Twitter LinkedIn Email
    Previous ArticleCarbo-Ionic Cultures for Safe and Sustainable Power
    Next Article Refrigeration Device Panel Installation and Aesthetic Solution

    Related Posts

    Lift Assist System for Easier Foldable Roof Operation

    May 26, 2026

    Shaped Coils for Deep-Brain Magnetic Stimulation

    May 26, 2026

    Parking Brake Operation Stroke Reduction with Lever Design

    May 26, 2026

    Metamaterial Design for Directed Energy Protection

    May 26, 2026

    Memristive NDR Device for Adaptive Oscillator Circuits

    May 26, 2026

    Side Air Bag Design for Even Inflation and Safety

    May 26, 2026

    Comments are closed.

    Start Free Trial Today!

    Get instant, smart ideas, solutions and spark creativity with Patsnap Eureka AI. Generate professional answers in a few seconds.

    ⚡️ Generate Ideas →
    Table of Contents
    • Magnetic Offset Correction in Semiconductor Devices
      • Summary
      • TRIZ Analysis
      • Data Source
      • Accelerate from idea to impact
    About Us
    About Us

    Eureka harnesses unparalleled innovation data and effortlessly delivers breakthrough ideas for your toughest technical challenges. Eliminate complexity, achieve more.

    Facebook YouTube LinkedIn
    Latest Hotspot

    US20120251581A1 — Cyclophilin A and HCV Replicon Activity Dataset: Structure–Activity Relationship (SAR) and Biological Activity Analysis

    June 3, 2026

    Vehicle-to-Grid For EVs: Battery Degradation, Grid Value, and Control Architecture

    May 12, 2026

    TIGIT Target Global Competitive Landscape Report 2026

    May 11, 2026
    tech newsletter

    35 Breakthroughs in Magnetic Resonance Imaging – Product Components

    July 1, 2024

    27 Breakthroughs in Magnetic Resonance Imaging – Categories

    July 1, 2024

    40+ Breakthroughs in Magnetic Resonance Imaging – Typical Technologies

    July 1, 2024
    © 2026 Patsnap Eureka. Powered by Patsnap Eureka.

    Type above and press Enter to search. Press Esc to cancel.