MEMS Logic Device for High-Temperature and Voltage Applications
Here’s PatSnap Eureka !
Summary
Problems
Conventional semiconductor integrated circuits face limitations in high temperature, radiation hardness, and voltage operation, necessitating the development of more robust digital logic elements.
Innovation solutions
A configurable multi-function MEMS logic device utilizing a torsion hinge to pivot a gate with electrically conductive channels and bias elements, allowing for various digital element functionalities such as multiplexers, inverters, and charge pumps, and integrated into circuits with hardwired or programmable connections.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If conventional semiconductor integrated circuits are used, then manufacturing and integration are straightforward, but they cannot operate reliably at high temperatures, in high-radiation environments, or at high voltages
Why choose this principle:
The patent replaces conventional semiconductor electronic switches with MEMS (microelectromechanical) switches that use mechanical motion of a gate to control electrical conductivity. The gate physically moves to make or break electrical contact between source and drain contacts, enabling operation in extreme conditions where semiconductor devices fail due to their material properties and manufacturing constraints
Principle concept:
If conventional semiconductor integrated circuits are used, then manufacturing and integration are straightforward, but they cannot operate reliably at high temperatures, in high-radiation environments, or at high voltages
Why choose this principle:
The invention changes the fundamental operating parameters by using electrostatic actuation to move the gate between open and closed states. This allows the switch to operate at high voltages (beyond typical semiconductor breakdown voltages) and high temperatures where semiconductor materials would fail, achieving adaptability across extreme operating conditions while maintaining reliability
Application Domain
Data Source
AI summary:
A configurable multi-function MEMS logic device utilizing a torsion hinge to pivot a gate with electrically conductive channels and bias elements, allowing for various digital element functionalities such as multiplexers, inverters, and charge pumps, and integrated into circuits with hardwired or programmable connections.
Abstract
A MEMS logic device comprising agate which pivots on a torsion hinge, two conductive channels on the gate, one on each side of the torsion hinge, source and drain landing pads under the channels, and two body bias elements under the gate, one on each side of the torsion hinge, so that applying a threshold bias between one body bias element and the gate will pivot the gate so that one channel connects the respective source and drain landing pad, and vice versa. An integrated circuit with MEMS logic devices on the dielectric layer, with the source and drain landing pads connected to metal interconnects of the integrated circuit. A process of forming the MEM switch.