Non-Volatile Memory Design to Prevent Threshold Voltage Shifts
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Summary
Problems
Non-volatile memory devices with charge trapping structures suffer from deteriorated device characteristics due to regions near the sidewalls of the gate electrode being inaccessible for electron injection or removal, affecting threshold voltage and overall performance.
Innovation solutions
A non-volatile memory device design featuring a charge trapping layer with a recessed end in the non-overlap region between the active region and the wordline, along with a tunneling layer and blocking layer, to enhance electron injection and removal efficiency, preventing threshold voltage shifts during programming and erase operations.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If the charge trapping layer is disposed under the wordline extending along the active region, then the memory device can store charge effectively, but regions near the sidewalls of the gate electrode cause threshold voltage shifts and deteriorate device characteristics
Why choose this principle:
The charge trapping layer is segmented into two distinct regions: an overlap region positioned under the wordline for charge storage, and a non-overlap region recessed from the sidewalls to prevent harmful electron accumulation. This segmentation resolves the contradiction by allowing the layer to fulfill its charge storage function while avoiding the region that causes threshold voltage shifts.
Principle concept:
If the charge trapping layer is disposed under the wordline extending along the active region, then the memory device can store charge effectively, but regions near the sidewalls of the gate electrode cause threshold voltage shifts and deteriorate device characteristics
Why choose this principle:
Different regions of the charge trapping layer are given different spatial configurations: the overlap region maintains full extent under the wordline for effective charge storage, while the non-overlap region is recessed inwardly from the outer boundary to eliminate harmful effects near sidewalls. This local differentiation resolves the contradiction between charge storage effectiveness and device characteristic stability.
Application Domain
Data Source
AI summary:
A non-volatile memory device design featuring a charge trapping layer with a recessed end in the non-overlap region between the active region and the wordline, along with a tunneling layer and blocking layer, to enhance electron injection and removal efficiency, preventing threshold voltage shifts during programming and erase operations.
Abstract
A non-volatile memory device has improved operating characteristics. The non-volatile memory device includes an active region; a wordline formed on the active region to cross the active region; and a charge trapping layer interposed between the active region and the wordline, wherein a cross region of the active region and the wordline includes an overlap region in which the charge trapping layer is disposed and a non-overlap region in which the charge trapping layer is not disposed.