Plasma-Based Crystallization for Reliable Select Devices
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Summary
Problems
Current methods for crystallizing amorphous silicon into polycrystalline silicon for semiconductor devices, such as solid phase crystallization, excimer laser crystallization, metal-induced crystallization, and metal-induced lateral crystallization, face issues like long processing times, high temperatures, expensive equipment requirements, and increased leakage current due to residual crystallization-inducing metals.
Innovation solutions
The development of select devices with a semiconductive stack comprising materials with a thickness of 700 angstroms or less and a band gap of 4 eV or less, featuring a tunable configuration to accommodate different memory cell characteristics, including bipolar select devices with amorphous and partially nanocrystallized semiconductive materials, and electrodes made of metals like titanium nitride and ruthenium, allowing for high current densities and low fatigue failure.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If solid phase crystallization is used to crystallize amorphous silicon into polycrystalline silicon, then the semiconductor material can be formed, but the processing time becomes long and the substrate may transform due to high temperature annealing
Why choose this principle:
The patent changes the crystallization method from thermal annealing to plasma treatment, fundamentally altering the processing parameters from high temperature (700°C or less) to lower temperature plasma conditions, thereby reducing processing time while maintaining substrate stability
Principle concept:
If solid phase crystallization is used to crystallize amorphous silicon into polycrystalline silicon, then the semiconductor material can be formed, but the processing time becomes long and the substrate may transform due to high temperature annealing
Why choose this principle:
The patent replaces the thermal field (heat-based SPC) with a plasma field (electromagnetic field), substituting a mechanical/thermal process with a field-based process that achieves crystallization without high temperature annealing, thus avoiding substrate transformation and reducing processing time
Application Domain
Data Source
AI summary:
The development of select devices with a semiconductive stack comprising materials with a thickness of 700 angstroms or less and a band gap of 4 eV or less, featuring a tunable configuration to accommodate different memory cell characteristics, including bipolar select devices with amorphous and partially nanocrystallized semiconductive materials, and electrodes made of metals like titanium nitride and ruthenium, allowing for high current densities and low fatigue failure.
Abstract
Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.