Plasma Etching Solution for High-Precision Substrate Features
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Summary
Problems
In plasma etching processes, the challenge lies in preventing the reattachment of substances released during mask etching from blocking the openings and ensuring precise control over the etching rate to maintain the integrity of the substrate's features, particularly in high-aspect-ratio structures where traditional methods fail to effectively manage the etching process.
Innovation solutions
The method involves forming a film on the substrate made of the same material as the substrate region, which serves as a protective layer during etching, and using a gas supply system to control the etching process, ensuring the etching rate of the film is equal to or higher than the substrate region, thereby preventing mask blockage and maintaining precise feature formation.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If plasma etching is performed on the substrate region directly without a protective film, then the etching rate is high and the process is simple, but the mask openings become blocked by reattached etched substances
Why choose this principle:
A protective film made of the same material as the substrate region is introduced as an intermediary layer between the mask and the substrate region. This protective film mediates the etching process by being etched simultaneously with the substrate region, preventing etched substances from reattaching to and blocking the mask openings, while maintaining high etching efficiency
Principle concept:
If plasma etching is performed on the substrate region directly without a protective film, then the etching rate is high and the process is simple, but the mask openings become blocked by reattached etched substances
Why choose this principle:
The protective film is formed on the substrate surface before the plasma etching process begins. This preliminary action ensures that the mask openings are protected from blockage throughout the entire etching process, allowing the etching to proceed without interruption or quality degradation
Application Domain
Data Source
AI summary:
The method involves forming a film on the substrate made of the same material as the substrate region, which serves as a protective layer during etching, and using a gas supply system to control the etching process, ensuring the etching rate of the film is equal to or higher than the substrate region, thereby preventing mask blockage and maintaining precise feature formation.
Abstract
An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.