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Home»TRIZ Case»Plasma Parameter Measurement with Microwave Cutoff Probe

Plasma Parameter Measurement with Microwave Cutoff Probe

May 22, 20263 Mins Read
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Plasma Parameter Measurement with Microwave Cutoff Probe

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Summary

Problems

The increasing miniaturization and high integration of semiconductor elements have heightened the sensitivity of plasma processes, necessitating precise measurement methods for plasma parameters to ensure product quality.

Innovation solutions

A method and apparatus for measuring plasma parameters using a cutoff probe with line-shaped antennas and processors to calculate microwave band spectra and moving minima, enabling precise plasma density measurement.

TRIZ Analysis

Specific contradictions:

plasma parameter measurement precision
vs
measurement reliability in high-density plasma

General conflict description:

Measurement precision
vs
Reliability
TRIZ inspiration library
24 Intermediary (Mediator)
Try to solve problems with it

Principle concept:

If conventional measurement methods are used in high-density plasma environments, then measurement capability is maintained, but measurement precision deteriorates due to plasma density effects

Why choose this principle:

The patent introduces a cutoff probe as an intermediary measurement device that uses microwave transmission through plasma to indirectly measure plasma parameters. The probe includes a transmit antenna that sends microwaves and a receive antenna that detects transmitted signals, allowing measurement without direct contact with high-density plasma regions where conventional probes fail.

TRIZ inspiration library
28 Mechanics substitution (Replace mechanical system)
Try to solve problems with it

Principle concept:

If conventional measurement methods are used in high-density plasma environments, then measurement capability is maintained, but measurement precision deteriorates due to plasma density effects

Why choose this principle:

The patent replaces conventional direct-contact mechanical probe measurement methods with electromagnetic wave-based measurement. Instead of using physical sensors that must be inserted into plasma, the system uses microwave radiation to probe plasma characteristics, eliminating the mechanical intrusion problems that cause measurement failures in high-density environments.

Application Domain

plasma measurement microwave probe semiconductor precision

Data Source

Patent US12222362B2 Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer
Publication Date: 11 Feb 2025 TRIZ 电器元件
FIG 01
US12222362-D00001
FIG 02
US12222362-D00002
FIG 03
US12222362-D00003
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AI summary:

A method and apparatus for measuring plasma parameters using a cutoff probe with line-shaped antennas and processors to calculate microwave band spectra and moving minima, enabling precise plasma density measurement.

Abstract

An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Contents

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    microwave probe plasma measurement semiconductor precision
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    Table of Contents
    • Plasma Parameter Measurement with Microwave Cutoff Probe
      • Summary
      • TRIZ Analysis
      • Data Source
      • Accelerate from idea to impact
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