Reducing Coupling Capacitance in Semiconductor Devices
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Summary
Problems
In highly integrated semiconductor devices, the reduced size of unit cells leads to increased coupling capacitance between bit lines and storage contact plugs, as well as between bit line contacts and storage contact plugs, which affects device performance.
Innovation solutions
The implementation of a semiconductor device structure featuring stacked spacers with different dielectric constants on the sidewalls of bit line contacts and bit lines, and insulating layers with varying dielectric constants between bit line and storage node contacts, to reduce coupling capacitance.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If the size of unit cell is reduced to improve integration density, then the degree of integration is improved, but the coupling capacitance between bit line and storage node contact plug increases
Why choose this principle:
The patent applies local quality by introducing spacers with different dielectric constants at specific locations between the bit line and storage node contact plug. The first spacer region has a different dielectric constant than the second spacer region, allowing each region to be optimized for its specific function in reducing coupling capacitance while maintaining signal integrity.
Principle concept:
If the size of unit cell is reduced to improve integration density, then the degree of integration is improved, but the coupling capacitance between bit line and storage node contact plug increases
Why choose this principle:
The patent uses composite materials by combining spacers with different dielectric constants in series between the bit line and storage node contact plug. This composite structure of multiple dielectric layers creates an effective barrier against coupling capacitance that is greater than what a single uniform dielectric could provide.
Application Domain
Data Source
AI summary:
The implementation of a semiconductor device structure featuring stacked spacers with different dielectric constants on the sidewalls of bit line contacts and bit lines, and insulating layers with varying dielectric constants between bit line and storage node contacts, to reduce coupling capacitance.
Abstract
A semiconductor device includes a spacer having a nitride/oxide/nitride (NON) structure. The spacer is disposed between a sidewall of a bit line and a bit line contact and a sidewall of a storage node contact plug to reduce coupling capacitance between the bit line and a storage node contact plug and between the bit line contact and the storage node contact plug.