Simplified Resistance Change Memory with Diode-Based Design
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Summary
Problems
Existing semiconductor memory devices face challenges in maintaining characteristics and complexity as they miniaturize, particularly in non-volatile memory technologies that require transistors, and there is a need for simpler configurations that can achieve high-speed random accessibility and long-term data retention.
Innovation solutions
A resistance change memory device is developed using a substrate with first and second wiring lines and memory cells at their crossing points, featuring a variable resistance element with a recording layer of composite compound and a Schottky diode, where one electrode acts as a cation source for writing or erasing, eliminating the need for transistors and simplifying the cell array configuration.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If transistors are used as constituent parts in non-volatile memory devices, then data retention capability is improved, but device complexity increases
Why choose this principle:
The patent extracts and eliminates the transistor component from the memory cell structure, replacing it with a simpler diode-based configuration. The memory cell consists of a variable resistance element connected in series with a diode, removing the need for transistors while maintaining non-volatile data storage capability through the use of phase-change materials or ovonic memory elements.
Principle concept:
If transistors are used as constituent parts in non-volatile memory devices, then data retention capability is improved, but device complexity increases
Why choose this principle:
The patent changes the fundamental operating parameters of the memory cell by transitioning from transistor-based control to diode-based selection. The diode provides sufficient selectivity for memory operations without requiring the complex three-terminal structure of transistors, thereby simplifying the device while preserving functionality.
Application Domain
Data Source
AI summary:
A resistance change memory device is developed using a substrate with first and second wiring lines and memory cells at their crossing points, featuring a variable resistance element with a recording layer of composite compound and a Schottky diode, where one electrode acts as a cation source for writing or erasing, eliminating the need for transistors and simplifying the cell array configuration.
Abstract
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of which serves as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.