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Home»TRIZ Case»Accurate Seal Path Detection for Bonded Wafer Interfaces

Accurate Seal Path Detection for Bonded Wafer Interfaces

May 22, 20264 Mins Read
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Accurate Seal Path Detection for Bonded Wafer Interfaces

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Summary

Problems

During semiconductor fabrication, the thinning process of bonded wafers can cause damage due to applied forces, particularly at the gaps along the perimeter of the wafer interface, leading to peeling or damage of dielectric layers, as existing methods for determining the seal path are inaccurate due to the quality of beveled edges and captured images.

Innovation solutions

A method using a radiation source and sensor to determine the position of the interface between bonded workpieces by scanning electromagnetic radiation along a vertical axis and measuring intensity, allowing for accurate determination of the interface position independent of edge quality or image clarity, thereby improving the accuracy of seal formation.

TRIZ Analysis

Specific contradictions:

interface position determination accuracy
vs
radiation scanning system complexity

General conflict description:

Measurement precision
vs
Device complexity
TRIZ inspiration library
28 Mechanics substitution (Replace mechanical system)
Try to solve problems with it

Principle concept:

If traditional image-based methods are used to determine the seal path, then the process is simple to implement, but the measurement precision is poor due to beveled edge quality and image clarity issues

Why choose this principle:

The patent replaces traditional mechanical/image-based measurement systems with a radiation-based detection system. Instead of using cameras to capture images of beveled edges, the system uses a radiation source to emit radiation and a sensor to detect radiation intensity variations, thereby determining the interface position between bonded wafers with higher precision.

TRIZ inspiration library
24 Intermediary (Mediator)
Try to solve problems with it

Principle concept:

If traditional image-based methods are used to determine the seal path, then the process is simple to implement, but the measurement precision is poor due to beveled edge quality and image clarity issues

Why choose this principle:

The patent introduces radiation as an intermediary medium to detect the interface position. The radiation source emits radiation that passes through or reflects off the wafer interface, and the sensor detects intensity variations caused by the interface, allowing precise determination of the seal path without direct mechanical contact or image capture of difficult-to-visualize edges.

Application Domain

bonded wafers seal path detection radiation scanning

Data Source

Patent US20240379468A1 Process tool for analyzing bonded workpiece interface
Publication Date: 14 Nov 2024 TRIZ 电器元件
FIG 01
US20240379468A1-D00001
FIG 02
US20240379468A1-D00002
FIG 03
US20240379468A1-D00003
Login to view Image

AI summary:

A method using a radiation source and sensor to determine the position of the interface between bonded workpieces by scanning electromagnetic radiation along a vertical axis and measuring intensity, allowing for accurate determination of the interface position independent of edge quality or image clarity, thereby improving the accuracy of seal formation.

Abstract

The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.

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    bonded wafers radiation scanning seal path detection
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    Table of Contents
    • Accurate Seal Path Detection for Bonded Wafer Interfaces
      • Summary
      • TRIZ Analysis
      • Data Source
      • Accelerate from idea to impact
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