Selective Pattern Formation for Precise Semiconductor Etching
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Summary
Problems
Current multi-patterning methods in semiconductor processes, such as SADP and SAQP, face challenges in controlling deviations and work precision due to increased process complexity, leading to significant deviations in wiring portions during the semiconductor device wiring process.
Innovation solutions
A pattern forming method involving the formation of a manganese-oxide-containing film and subsequent hydrogen radical treatment, followed by the deposition of a Ru film using CVD, which allows for selective film formation on the etching target film without the need for an etch-back process, thereby minimizing deviations and improving controllability.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If multi-patterning methods (SADP, SAQP) are used to reduce pitch, then manufacturing capability is improved, but deviation control deteriorates due to increased process complexity
Why choose this principle:
The patent inverts the conventional approach by forming the inversion pattern directly through selective film formation on reduced metal surfaces, rather than through multiple sequential patterning steps. This inversion eliminates the accumulation of deviations from repeated lithography and etching processes, achieving both pitch reduction and improved deviation control
Principle concept:
If conventional inversion method (forming inversion material, etch-back, etching original pattern) is used, then line and space portions are inverted, but deviation increases and work controllability deteriorates due to multiple processes
Why choose this principle:
The patent extracts and eliminates the problematic etch-back process from the conventional inversion method. By forming the inversion pattern directly through selective deposition on reduced metal surfaces, the method removes the source of deviation accumulation while maintaining the inversion functionality
Application Domain
Data Source
AI summary:
A pattern forming method involving the formation of a manganese-oxide-containing film and subsequent hydrogen radical treatment, followed by the deposition of a Ru film using CVD, which allows for selective film formation on the etching target film without the need for an etch-back process, thereby minimizing deviations and improving controllability.
Abstract
A method includes: forming a metal oxide film on a substrate including an etching target film and a metal pattern formed thereon, and forming an oxide film having a relatively strong oxygen bond on the metal pattern; performing a reduction treatment such that the metal oxide film formed on the metal pattern is defined as a first metal-containing film and the metal oxide film formed on the etching target film is defined as a second metal-containing film whose surface is reduced into metal; selectively forming a metal film on only the second metal-containing film formed on the etching target film, the metal film having such a property that it is easy to be formed on metal and is hard to be formed on an oxide; and obtaining an inversion pattern composed of the inversion material by etching away the metal pattern and leaving the inversion material and the metal film.