Reducing Capacitive Coupling in Semiconductor Interconnects
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Summary
Problems
The increasing density and reduced spacing between conductive features in semiconductor integrated circuits lead to increased capacitive coupling, higher power consumption, and longer RC time constants, posing challenges in device performance and efficiency.
Innovation solutions
The implementation of a hard mask layer formed by materials different from the conductive features, which provides selective etch resistance and protects the conductive features during the formation of openings, thereby preventing damage and misalignment issues, followed by a capping layer to reduce capacitive coupling.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If the distance between conductive features is decreased to increase density, then the device functionality and performance are improved, but the capacitive coupling between conductive features increases
Why choose this principle:
The patent introduces a dielectric layer as an intermediary substance between adjacent conductive features. This dielectric layer has a lower dielectric constant (k-value) than conventional materials, which reduces the capacitive coupling effect between neighboring conductors while allowing them to remain in close proximity for high density interconnects.
Principle concept:
If the distance between conductive features is decreased to increase density, then the device functionality and performance are improved, but the capacitive coupling between conductive features increases
Why choose this principle:
The patent changes the dielectric constant parameter of the insulating material between conductive features. By using materials with lower k-values, the capacitive coupling is reduced, allowing for decreased spacing between conductors without proportionally increasing capacitance, thus enabling higher density interconnect structures.
Application Domain
Data Source
AI summary:
The implementation of a hard mask layer formed by materials different from the conductive features, which provides selective etch resistance and protects the conductive features during the formation of openings, thereby preventing damage and misalignment issues, followed by a capping layer to reduce capacitive coupling.
Abstract
An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.