Reducing Semiconductor Device Height with Conductive Elements
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Summary
Problems
Existing semiconductor devices with capped MEMS systems face challenges in reducing device height due to the need for shield wires that protrude above the cap wafer, limiting miniaturization and increasing the overall profile, and the inability to grind or etch the cap wafer without removing essential conductive metal layers.
Innovation solutions
The use of conductive elements instead of shield wires to electrically couple the cap wafer and substrate, allowing for a reduced cap wafer height through grinding or etching, and ensuring both the cap wafer and substrate are at the same potential to minimize adverse electrical fields, with conductive elements formed using standard die attach material or other conductive materials.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If shield wires are used to electrically couple the cap wafer and substrate, then electrical connection is achieved, but the device height increases due to wires protruding above the cap wafer
Why choose this principle:
The patent extracts and removes the shield wires that were previously necessary for electrical coupling. By eliminating these protruding wires, the device height is reduced while the electrical connection function is maintained through alternative means (conductive adhesive or conductive paste applied at the bond interface).
Principle concept:
If shield wires are used to electrically couple the cap wafer and substrate, then electrical connection is achieved, but the device height increases due to wires protruding above the cap wafer
Why choose this principle:
The patent merges the electrical coupling function with the bonding process itself. The conductive adhesive or conductive paste serves dual purposes: providing mechanical bonding between the cap wafer and substrate while simultaneously establishing electrical connection, thereby eliminating the need for separate shield wires.
Application Domain
Data Source
AI summary:
The use of conductive elements instead of shield wires to electrically couple the cap wafer and substrate, allowing for a reduced cap wafer height through grinding or etching, and ensuring both the cap wafer and substrate are at the same potential to minimize adverse electrical fields, with conductive elements formed using standard die attach material or other conductive materials.
Abstract
A device ( 100 ) may use one or more conductive elements ( 112 ) to electrically couple a substrate ( 116 ) and a cap ( 114 ). In one embodiment, an acceleration sense element may be formed on the substrate ( 116 ), and the cap ( 114 ) may be used to provide hermetic protection to the acceleration sense element. In one embodiment, conductive elements ( 112 ) may be formed by dispensing conductive die attach material. Wire bonds (e.g. 322 ) bonded to bond pads (e.g. 332 ) on the substrate (e.g. 316 ) may be used to couple substrate ( 116 ), the conductive element pad ( 335 ), and the cap ( 114 ), to a desired predetermined potential.