Semiconductor Device Manufacturing: Stabilizing Wavelengths
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Summary
Problems
Existing methods for manufacturing semiconductor devices, such as those used in optical fiber communication, struggle to sufficiently reduce variations in the difference value between photoluminescence wavelength and oscillating wavelength, which affects current-optical output and frequency characteristics.
Innovation solutions
The method involves forming a lower and upper light confinement layer, a light absorption layer, and a diffusion constraining layer on a substrate, followed by the formation of a laser section with a diffraction grating and a contact layer, using the same type of dopant for the contact and upper light confinement layers to stabilize the photoluminescence wavelength of the optical modulator and adjust the oscillating wavelength of the laser section to predetermined values.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If the optical modulator is formed before the laser section using a butt joint method, then the optical modulator can be formed on a flat surface making uniform the composition of the light absorption layer, but the variation in the difference value between photoluminescence wavelength and oscillating wavelength cannot be reduced sufficiently
Why choose this principle:
The optical modulator is formed in advance on a flat surface before the laser section is formed. This preliminary formation allows the light absorption layer to be deposited uniformly on a flat substrate, ensuring compositional uniformity. The flat surface provides a stable foundation for subsequent laser section formation, preventing composition variation while enabling precise wavelength control in the later stages.
Principle concept:
If the optical modulator is formed after the laser section, then the laser section can be formed with precise wavelength control, but the light absorption layer composition becomes non-uniform
Why choose this principle:
The optical modulator structure including the light absorption layer is formed preliminarily on a flat surface before the laser section is created. This sequence ensures that the light absorption layer is deposited uniformly on a flat substrate, maintaining compositional stability. The laser section is then formed subsequently with precise wavelength control, achieving both uniformity and precision without compromising either property.
Application Domain
Data Source
AI summary:
The method involves forming a lower and upper light confinement layer, a light absorption layer, and a diffusion constraining layer on a substrate, followed by the formation of a laser section with a diffraction grating and a contact layer, using the same type of dopant for the contact and upper light confinement layers to stabilize the photoluminescence wavelength of the optical modulator and adjust the oscillating wavelength of the laser section to predetermined values.
Abstract
A method for manufacturing a semiconductor device includes forming a lower light confinement layer on a substrate, a light absorption layer on the lower light confinement layer, and an upper light confinement layer on the light absorption layer; and removing parts of these layers to form an optical modulator, forming a laser section having a diffraction grating in a portion of the substrate where the optical modulator is not present, forming a diffusion constraining layer, which constrains diffusion of a dopant, on the upper light confinement layer, and forming a contact layer on the laser section and the diffusion constraining layer. The same dopant is present in the contact layer and the upper light confinement layer.