Semiconductor Layout for Efficient RF Power Amplifiers
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Summary
Problems
Current radio frequency electronic systems, particularly front-end systems, face challenges in achieving high power added efficiency, compact layout, low cost, and enhanced integration while maintaining robustness and linearity, especially in semiconductor-on-insulator technology.
Innovation solutions
The implementation of a semiconductor-on-insulator die with a specific transistor layout and conduction path configuration, including a substrate layer, active layer, insulator layer, and metal layers, which allows for efficient heat dissipation and improved performance in power amplifiers, and the use of field effect transistors in cascode configurations.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a conventional transistor layout is used in semiconductor-on-insulator technology, then the device can be manufactured with standard processes, but heat dissipation is insufficient and power added efficiency is low
Why choose this principle:
The patent transitions from planar heat dissipation to three-dimensional vertical heat dissipation by extending conduction paths through multiple metal layers and via segments. The conduction path includes first conduction path portions extending vertically from the active layer through the insulator layer to contact pads, and second conduction path portions providing additional vertical extension through multiple metal layers, creating a multi-dimensional heat dissipation structure that effectively conducts heat away from the transistor active region.
Principle concept:
If the conduction path is extended through multiple layers to improve heat dissipation, then power added efficiency increases, but the device footprint and layout complexity increase
Why choose this principle:
The patent implements nesting by placing the conduction path structure within the footprint of the contact pad. The first conduction path portions extend vertically within the contact pad footprint, and the second conduction path portions are positioned to utilize the same vertical space, creating a nested configuration where multiple conduction path segments are stacked within each other's spatial envelope. This allows extended heat dissipation paths without proportionally increasing the device footprint.
Application Domain
Data Source
AI summary:
The implementation of a semiconductor-on-insulator die with a specific transistor layout and conduction path configuration, including a substrate layer, active layer, insulator layer, and metal layers, which allows for efficient heat dissipation and improved performance in power amplifiers, and the use of field effect transistors in cascode configurations.
Abstract
A semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die includes at least one contact pad and a transistor including a first terminal formed within the active layer. A conduction path can include a plurality of first conduction path portions extending between the first terminal and the at least one contact pad and residing within a footprint of the at least one contact pad.