Semiconductor Substrate Oxygen Control for Reliable Devices
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Summary
Problems
The characteristics of semiconductor devices vary significantly due to variations in oxygen concentration within the semiconductor substrate, leading to inconsistent performance across devices.
Innovation solutions
A semiconductor device with a controlled oxygen concentration distribution is achieved by annealing the substrate at a temperature that exceeds the initial oxygen concentration, allowing oxygen to diffuse uniformly, and then grinding the substrate to adjust the thickness, thereby creating a high oxygen concentration peak followed by a gradual decrease, which stabilizes the oxygen concentration across the substrate.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If oxygen concentration in the semiconductor substrate is not controlled, then manufacturing process is simpler, but device characteristics vary significantly
Why choose this principle:
Oxygen is introduced into the semiconductor substrate before the main device fabrication process through pre-treatment steps such as plasma treatment or thermal diffusion. This preliminary oxygen incorporation ensures consistent oxygen concentration throughout the substrate, establishing a reliable foundation for subsequent processing and eliminating variability in device characteristics.
Principle concept:
If oxygen concentration in the semiconductor substrate is not controlled, then manufacturing process is simpler, but device characteristics vary significantly
Why choose this principle:
The oxygen concentration in the semiconductor substrate is controlled by adjusting processing parameters such as annealing temperature, oxygen partial pressure, and treatment duration. By systematically varying these parameters during manufacturing, the oxygen concentration can be precisely tuned to achieve consistent device performance across production batches.
Application Domain
Data Source
AI summary:
A semiconductor device with a controlled oxygen concentration distribution is achieved by annealing the substrate at a temperature that exceeds the initial oxygen concentration, allowing oxygen to diffuse uniformly, and then grinding the substrate to adjust the thickness, thereby creating a high oxygen concentration peak followed by a gradual decrease, which stabilizes the oxygen concentration across the substrate.
Abstract
Provided is a semiconductor device comprising a semiconductor substrate containing oxygen. An oxygen concentration distribution in a depth direction of the semiconductor substrate has a high oxygen concentration part where an oxygen concentration is higher on a further upper surface-side than a center in the depth direction of the semiconductor substrate than in a lower surface of the semiconductor substrate. The high oxygen concentration part may have a concentration peak in the oxygen concentration distribution. A crystal defect density distribution in the depth direction of the semiconductor substrate has an upper surface-side density peak on the upper surface-side of the semiconductor substrate, and the upper surface-side density peak may be arranged within a depth range in which the oxygen concentration is equal to or greater than 50% of a peak value of the concentration peak.