Semiconductor Patterning for High-Density Integration
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Summary
Problems
The challenge in semiconductor device fabrication lies in achieving higher integration density and performance while navigating the complexities of photolithography processes, particularly in maintaining pattern uniformity and preventing distortion due to proximity effects and process margin limitations.
Innovation solutions
A method involving multiple photomasks with overlapping layout patterns is employed to form conductive wiring patterns on a semiconductor device, ensuring uniform image pattern density and preventing pattern distortion by selectively forming openings in different regions of the substrate, thereby allowing for precise control over the formation of conductive wiring patterns.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If multiple photomasks with overlapping patterns are used, then manufacturing precision is improved, but device complexity increases
Why choose this principle:
The patent divides the single photolithography process into three separate patterning processes using three different photomasks. Each photomask is designed to form specific patterns in specific regions, with the third photomask selectively forming patterns only in the second region while overlapping with the second photomask's patterns in the first region. This segmentation allows precise control over pattern formation and eliminates proximity effect distortion by treating different regions separately.
Principle concept:
If multiple photomasks with overlapping patterns are used, then manufacturing precision is improved, but device complexity increases
Why choose this principle:
The patent applies different photomask patterns to different regions of the substrate. The first and second photomasks form patterns in both first and second regions, while the third photomask is designed to form patterns only in the second region. This local differentiation allows the third region to have enhanced pattern uniformity by compensating for proximity effect distortion locally, while maintaining overall pattern diversity across the substrate.
Application Domain
Data Source
AI summary:
A method involving multiple photomasks with overlapping layout patterns is employed to form conductive wiring patterns on a semiconductor device, ensuring uniform image pattern density and preventing pattern distortion by selectively forming openings in different regions of the substrate, thereby allowing for precise control over the formation of conductive wiring patterns.
Abstract
A semiconductor device and a fabricating method thereof are provided. The method includes sequentially forming an interlayer insulating layer and a hard mask layer on a substrate with first and second regions, performing a first patterning process on the hard mask layer to form first openings in the first and second regions, performing a second patterning process on the hard mask layer to form second openings in the first and second regions, and performing a third patterning process on the hard mask layer to selectively form at least one third opening in only the second region. The third patterning process includes forming a first photoresist pattern with openings on the hard mask layer, and the opening of the first photoresist pattern on the first region is overlapped with the second opening on the first region, when viewed in a plan view.