Semiconductor Manufacturing: Efficient Substrate Stripping Solution
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Summary
Problems
Conventional semiconductor device manufacturing processes face challenges such as strong adhesion between substrates and interconnect layers, leading to damage during stripping, increased manufacturing costs, and ineffective reuse of support substrates due to prolonged exposure to etchant solutions.
Innovation solutions
A method involving the formation of a seed metal layer and a protective film on a support substrate, allowing for easy stripping by exposing the interface and using a protective film to prevent damage from stress or etchant solutions, thereby reducing manufacturing time and cost, and enabling effective reuse of substrates.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a stress is applied to strip the substrate for transfer from the interconnect layer, then the substrate can be removed, but the interconnect layer may be damaged by the stress
Why choose this principle:
A release structure is formed at the interface between the substrate for transfer and the interconnect layer before the stripping process. This release structure facilitates easy separation by providing a predetermined separation point, allowing the substrate to be stripped without applying excessive stress that would damage the interconnect layer
Principle concept:
If a stress is applied to strip the substrate for transfer from the interconnect layer, then the substrate can be removed, but the interconnect layer may be damaged by the stress
Why choose this principle:
The release structure acts as an intermediary element between the substrate for transfer and the interconnect layer. It mediates the separation process by providing a dedicated interface for stress application and propagation, protecting the interconnect layer from direct stress exposure while enabling effective substrate removal
Application Domain
Data Source
AI summary:
A method involving the formation of a seed metal layer and a protective film on a support substrate, allowing for easy stripping by exposing the interface and using a protective film to prevent damage from stress or etchant solutions, thereby reducing manufacturing time and cost, and enabling effective reuse of substrates.
Abstract
Method of manufacturing a semiconductor device, which achieves a reduction in manufacturing cost and prevents, a damage on the interconnect layer by an influence of the etchant solution, since the support substrate can be easily stripped from the interconnect layer. The method of manufacturing a semiconductor device includes: forming an interconnect film, by forming a seed metal layer on a support substrate and a protective film contacting with an end of an interface between the support substrate and the seed metal layer, and by growing a plated material from a surface of the seed metal layer; mounting a semiconductor chip on the interconnect film; removing at least a portion of the protective film to form a region where the support substrate and the seed metal layer are exposed; and stripping the support substrate from the region as a starting point to remove thereof from the seed metal layer.