Reducing Void Formation in Solar Cell Back Electrodes
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Summary
Problems
Solar cells face inefficiencies due to void generation between the back electrode layer and the substrate during manufacturing, leading to increased contact resistance and reduced photoelectric efficiency.
Innovation solutions
Incorporating silicon material into the back electrode layer, either throughout its surface or in specific portions, to prevent void formation and enhance electrical connections, with the silicon content optimized between 6 wt% and 15 wt% to minimize resistance and maximize efficiency.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If aluminum paste is heated to form aluminum silicide in the back electrode layer, then electrical connection to the substrate is achieved, but voids are generated between the back electrode layer and substrate leading to increased contact resistance
Why choose this principle:
The patent changes the chemical composition parameters of the back electrode layer by incorporating silicon material (6-15 wt%) into the aluminum paste formulation. This parameter modification prevents void formation during the firing process while maintaining electrical connectivity, thereby reducing contact resistance without sacrificing connection reliability
Principle concept:
If aluminum paste is heated to form aluminum silicide in the back electrode layer, then electrical connection to the substrate is achieved, but voids are generated between the back electrode layer and substrate leading to increased contact resistance
Why choose this principle:
The patent creates a composite back electrode layer material combining aluminum with silicon particles or beads. This composite structure prevents the harmful void formation that occurs with pure aluminum paste while ensuring reliable electrical contact between the back electrode layer and substrate
Application Domain
Data Source
AI summary:
Incorporating silicon material into the back electrode layer, either throughout its surface or in specific portions, to prevent void formation and enhance electrical connections, with the silicon content optimized between 6 wt% and 15 wt% to minimize resistance and maximize efficiency.
Abstract
A solar cell includes a substrate of a first conductive type, an emitter layer which is positioned at an incident surface of the substrate and has a second conductive type opposite the first conductive type, a front electrode which is positioned on the incident surface of the substrate and is electrically connected to the emitter layer, a back passivation layer which is positioned on a back surface opposite the incident surface of the substrate, has at least one hole, and contains intrinsic silicon, and a back electrode layer positioned on the back passivation layer. The back electrode layer is electrically connected to the substrate through the at least one hole of the back passivation layer and contains a distribution of a silicon material.