Solid-State Imaging Device: Miniaturization via Shared Diffusion Regions
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Summary
Problems
In solid-state imaging devices, sharing an impurity diffusion region among multiple pixel regions is challenging due to the complexity of wiring configurations, which hinders miniaturization and increases the risk of signal electric charge inflow between adjacent pixels.
Innovation solutions
A contact electrode is embedded in the semiconductor substrate and positioned over and in contact with impurity diffusion regions of adjacent pixel regions, allowing for electrical coupling and sharing of the impurity diffusion region, thereby simplifying the wiring configuration and reducing contact resistance.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If wiring configurations are made complex to connect impurity diffusion regions in each pixel region, then electrical connection is achieved, but device size increases and manufacturing precision deteriorates
Why choose this principle:
The patent merges the wiring structure with the impurity diffusion region by forming the wiring layer directly over the diffusion region without requiring separate complex interconnections. This integration simplifies the overall wiring configuration while maintaining reliable electrical connection between adjacent pixel regions.
Principle concept:
If wiring configurations are made complex to connect impurity diffusion regions in each pixel region, then electrical connection is achieved, but device size increases and manufacturing precision deteriorates
Why choose this principle:
The impurity diffusion region serves multiple functions: it acts as both the charge accumulation region for photoelectric conversion and as the electrical connection path between adjacent pixels. This multi-functionality eliminates the need for dedicated wiring structures, reducing device complexity.
Application Domain
Data Source
AI summary:
A contact electrode is embedded in the semiconductor substrate and positioned over and in contact with impurity diffusion regions of adjacent pixel regions, allowing for electrical coupling and sharing of the impurity diffusion region, thereby simplifying the wiring configuration and reducing contact resistance.
Abstract
A solid-state imaging device including: a semiconductor substrate having a first surface and a second surface opposed to each other, and including a photoelectric converter provided for each of pixel regions; an impurity diffusion region provided, for each of the pixel regions, in proximity to the first surface of the semiconductor substrate; and a contact electrode embedded in the semiconductor substrate from the first surface, and provided over and in contact with the impurity diffusion regions each provided for each of the pixel regions adjacent to each other.