Substrate Processing for High-Precision Semiconductor Films
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Summary
Problems
The miniaturization of semiconductor devices requires improved substrate processing techniques to enhance film characteristics post-plasma processing, as existing methods are inadequate in achieving desired film modifications and uniformity.
Innovation solutions
A substrate processing apparatus with multiple process chambers and gas supply units, utilizing capacitive and inductive coupled plasma to modify film characteristics, includes a first process chamber for forming a silicon-containing layer and a second process chamber for treating the film with activated gases to improve nitrogen incorporation and remove impurities.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a single process chamber is used for plasma processing, then the device complexity is reduced, but the manufacturing precision of film characteristics deteriorates
Why choose this principle:
The processing system is divided into two separate process chambers: a first process chamber for forming a silicon-containing layer using silane plasma, and a second process chamber for treating the film with nitrogen-containing gas plasma. This segmentation allows each chamber to be optimized for its specific function, achieving precise control over film composition and characteristics that cannot be obtained in a single chamber system.
Principle concept:
If plasma processing is performed to modify film characteristics, then the film characteristics are improved, but impurities remain in the film
Why choose this principle:
The system performs continuous plasma processing without breaking vacuum, transitioning the substrate directly from the first process chamber to the second process chamber. The plasma treatment in the second chamber continuously modifies the film characteristics and simultaneously removes impurities through prolonged exposure to activated nitrogen-containing gas, ensuring both improvement of film properties and elimination of contaminants.
Application Domain
Data Source
AI summary:
A substrate processing apparatus with multiple process chambers and gas supply units, utilizing capacitive and inductive coupled plasma to modify film characteristics, includes a first process chamber for forming a silicon-containing layer and a second process chamber for treating the film with activated gases to improve nitrogen incorporation and remove impurities.
Abstract
A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).