Transistor Stability Solution with Plasma-Treated Interfaces
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Summary
Problems
Transistors with oxide layers as channel layers in flat panel display devices experience characteristic variations due to light sensitivity, which affects their operational stability.
Innovation solutions
Incorporating a fluorine-containing region at the interface between the gate insulating layer and the channel layer, treated with plasma, using a ZnO-based oxide semiconductor with specific elements like indium, gallium, and aluminum, and employing a multilayer gate insulating structure including silicon oxide and silicon nitride layers to suppress light-induced characteristic variations.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If an oxide layer is used as a channel layer to improve carrier mobility, then the operational characteristics of the transistor are improved, but the transistor characteristics cannot be constantly maintained because the oxide layer is sensitive to light
Why choose this principle:
A fluorine-containing region is introduced as an intermediary layer between the gate insulating layer and the oxide semiconductor channel layer. This intermediate region acts as a buffer that prevents direct interaction between light and the oxide semiconductor, thereby maintaining stable transistor characteristics while preserving the high carrier mobility benefits of the oxide layer.
Principle concept:
If an oxide layer is used as a channel layer to improve carrier mobility, then the operational characteristics of the transistor are improved, but the transistor characteristics cannot be constantly maintained because the oxide layer is sensitive to light
Why choose this principle:
Plasma treatment using fluorine-containing gas is applied to the gate insulating layer surface, creating a fluorine-containing region through chemical deposition. This process modifies the surface properties of the gate insulating layer to reduce trap sites and improve the stability of the oxide semiconductor channel layer against light-induced degradation.
Application Domain
Data Source
AI summary:
Incorporating a fluorine-containing region at the interface between the gate insulating layer and the channel layer, treated with plasma, using a ZnO-based oxide semiconductor with specific elements like indium, gallium, and aluminum, and employing a multilayer gate insulating structure including silicon oxide and silicon nitride layers to suppress light-induced characteristic variations.
Abstract
Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light.