Tunable Electromagnetic Field for Uniform Semiconductor Doping
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Summary
Problems
Existing semiconductor deposition techniques fail to produce uniform layers on larger wafers, leading to inconsistent performance and yields in semiconductor integrated circuit manufacturing.
Innovation solutions
A tunable electromagnetic field structure is introduced proximate the wafer during the plasma doping process, using a magnetic field manipulation system with adjustable windings and core structures to direct plasma particles uniformly across the wafer surface, enhancing deposition uniformity.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If existing deposition techniques are used on larger wafers, then wafer size increases, but layer uniformity deteriorates
Why choose this principle:
The patent applies local quality by creating a non-uniform magnetic field distribution across the wafer surface, with different field strengths in different regions. The electromagnetic structure is positioned and configured to provide enhanced field strength at the wafer edges compared to the center, locally compensating for the edge effects that cause non-uniform deposition. This localized field modification ensures uniform dopant distribution across the entire wafer surface area.
Principle concept:
If existing deposition techniques are used on larger wafers, then wafer size increases, but layer uniformity deteriorates
Why choose this principle:
The patent employs parameter changes by dynamically adjusting the electromagnetic field parameters (strength, distribution, and configuration) during the deposition process. The system modifies the magnetic field characteristics to counteract the scaling effects that occur with larger wafer sizes, maintaining consistent deposition uniformity across different wafer dimensions by changing the field parameters rather than the physical deposition conditions.
Application Domain
Data Source
AI summary:
A tunable electromagnetic field structure is introduced proximate the wafer during the plasma doping process, using a magnetic field manipulation system with adjustable windings and core structures to direct plasma particles uniformly across the wafer surface, enhancing deposition uniformity.
Abstract
A method includes receiving a semiconductor wafer into a chamber; generating a plasma within the chamber to accelerate particles toward the semiconductor wafer; generating a magnetic field above the semiconductor wafer by an electromagnetic structure contained within the chamber, wherein the electromagnetic structure comprises a plurality of electromagnetic elements; and adjusting the magnetic field, wherein the adjusting of the magnetic field includes moving positions of each of the plurality of electromagnetic elements independently.