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Cast Copper Pure Copper Plate Material: Advanced Manufacturing Processes And High-Performance Applications

MAY 14, 202664 MINS READ

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Cast copper pure copper plate material represents a critical category of high-purity metallic substrates extensively utilized in electronics, power devices, and thermal management systems. With copper content typically exceeding 99.96 mass%, these plates are engineered through controlled thermomechanical processing—including hot rolling, rapid quenching, and selective cold working—to achieve fine-grained microstructures, superior electrical conductivity, and exceptional hot workability. This article provides an in-depth technical analysis of composition specifications, manufacturing methodologies, microstructural control strategies, and application-specific performance requirements for cast copper pure copper plate materials, drawing upon recent patent literature and industrial R&D advances.
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Composition Specifications And Purity Requirements For Cast Copper Pure Copper Plate Material

Cast copper pure copper plate material is defined by stringent compositional control to ensure optimal electrical, thermal, and mechanical properties. The baseline requirement mandates a copper (Cu) content of ≥99.96 mass%, with the remainder comprising tightly regulated trace elements and unavoidable impurities 123. This ultra-high purity is essential for applications demanding minimal resistivity and stable grain structures during high-temperature processing.

Critical Impurity Control And Elemental Additions

Effective management of trace elements is paramount in cast copper pure copper plate material:

  • Phosphorus (P): Limited to ≤2 mass ppm to prevent embrittlement and grain boundary segregation, which can degrade hot workability and ductility 68. Excessive P content has been shown to reduce manufacturing yield during heavy deformation processes.
  • Lead (Pb), Selenium (Se), Tellurium (Te): Combined total content restricted to ≤10 mass ppm 24678. These elements, if present in higher concentrations, promote coarse grain formation and non-uniform microstructures during thermal cycling, adversely affecting bonding quality in copper-ceramic assemblies 716.
  • Sulfur (S): Controlled within 2–20 mass ppm 6811. Sulfur plays a dual role: at optimized levels (typically 2–10 ppm), it inhibits abnormal grain growth at elevated temperatures (e.g., 850°C) by pinning grain boundaries, thereby maintaining fine grain size (average <500 µm post-heat treatment) 716. However, excessive S reduces hot workability and increases the risk of cracking during rolling 8.
  • Silver (Ag) and Iron (Fe): Total content of ≥3.0 mass ppm is beneficial for suppressing grain coarsening during pressure heat treatment (0.6 MPa, 850°C, 90 min hold), ensuring average grain size remains ≤500 µm and aspect ratio ≤2.0 in the rolled surface 71116.
  • Rare Earth and Refractory Elements: One or more A-group elements (Ca, Ba, Sr, Zr, Hf, Y, Sc, La–Lu series) and B-group elements (O, S, Se, Te) may be added in a combined range of 10–300 mass ppm to enhance high-temperature mechanical stability. For instance, high-temperature Vickers hardness at 850°C is maintained at 4.0–10.0 HV with these additions, critical for sputtering target and power device substrates 24.
  • Other Trace Metals: Total content of Al, Be, Cd, Mg, Ni, Sn, Cr is limited to 0.1–2.0 ppm to avoid detrimental effects on texture and bonding performance 1314.

These compositional specifications are designed to balance electrical conductivity (typically >100% IACS for pure Cu), thermal stability, and processability, making cast copper pure copper plate material suitable for demanding electronic and thermal applications.

Manufacturing Processes And Thermomechanical Treatment Routes For Cast Copper Pure Copper Plate Material

The production of cast copper pure copper plate material involves a multi-stage thermomechanical processing sequence designed to refine grain structure, minimize residual stress, and tailor crystallographic texture. The following sections detail the key process steps and their metallurgical rationale.

Hot Rolling And Controlled Cooling

Starting from cast ingots of ≥99.96 wt% purity, the material undergoes:

  1. Preheating: Ingots are heated to 550–800°C to ensure uniform temperature distribution and facilitate dynamic recrystallization during subsequent deformation 13591012.
  2. Hot Rolling: A total reduction ratio of ≥80–85% is applied, with finish rolling temperature maintained at 500–700°C 13591012. This temperature window is critical: it suppresses excessive grain growth while promoting partial recrystallization and twin boundary formation, which increases the fraction of special (low-Σ CSL) grain boundaries—beneficial for sputtering target performance by reducing abnormal discharge events 5.
  3. Rapid Quenching: Immediately after rolling completion, the plate is quenched at a cooling rate of 200–1000°C/min until the temperature drops below 200°C 13591012. This rapid cooling "freezes" the fine-grained, partially recrystallized microstructure and prevents coarsening, yielding average grain sizes of 15–50 µm in the rolled surface 247.

Optional Cold Rolling And Annealing

Depending on the target application, additional cold working may be applied:

  • Cold Rolling: A reduction ratio of 5–24% (for sputtering targets) 15 or 25–60% (for heavy machining applications) 9 is used to further refine grain size and introduce controlled dislocation density.
  • Annealing: Post-cold-rolling annealing at controlled temperatures (typically 400–600°C) promotes uniform recrystallization, stress relief, and texture development. For instance, plates intended for copper-ceramic bonding are annealed to achieve an average grain size of ≥10 µm with aspect ratio ≤2.0, ensuring dimensional stability and bondability 716.

Texture Engineering For Specialized Applications

For insulating substrates with copper plates (e.g., power device heat sinks), crystallographic texture is tailored using electron backscatter diffraction (EBSD) analysis. The target texture, expressed in Euler angles (φ₁, Φ, φ₂), exhibits:

  • Average orientation density in the range φ₂=0°, φ₁=0°, Φ=0–90° of 3.0 to <35.0 1314.
  • Maximum orientation density in the range φ₂=35°, φ₁=45–55°, Φ=65–80° of 1.0 to <30.0 1314.

This controlled texture minimizes anisotropy in thermal expansion and enhances bonding reliability during direct copper bonding (DCB) or active metal brazing (AMB) processes.

Microstructural Characteristics And Grain Boundary Engineering In Cast Copper Pure Copper Plate Material

The microstructure of cast copper pure copper plate material is a key determinant of its functional performance, particularly in high-temperature and high-power applications.

Grain Size And Morphology

  • Average Grain Size: Typically 15–50 µm in the as-rolled condition 247, with post-annealing sizes controlled to ≤500 µm even after severe heat treatment (850°C, 90 min, 0.6 MPa) 716. Fine grain size enhances yield strength (via Hall-Petch relationship) and reduces susceptibility to thermal fatigue cracking.
  • Aspect Ratio: Maintained at ≤2.0 in the rolled surface to ensure isotropic mechanical properties and uniform bonding behavior 716.
  • Grain Boundary Character: High fraction of twin boundaries (Σ3 CSL boundaries) is achieved through partial recrystallization during hot rolling and controlled cooling 515. Twin boundaries exhibit lower energy and higher resistance to impurity segregation, thereby improving sputtering uniformity and reducing slime generation in electroplating anodes 5.

High-Temperature Mechanical Stability

High-temperature Vickers hardness at 850°C is a critical metric for cast copper pure copper plate material used in power electronics:

  • Target Range: 4.0–10.0 HV 24, achieved through controlled addition of A-group and B-group elements (10–300 ppm total) 24. This hardness level ensures dimensional stability and resistance to creep during prolonged exposure to elevated temperatures in DCB or AMB bonding processes.

Residual Stress And Workability

The rapid quenching step minimizes residual stress by preventing dislocation pile-up and non-uniform cooling gradients 31012. Low residual stress is essential for:

  • Machining: Plates with fine, uniform grain structure and low stress exhibit excellent machinability, enabling heavy cutting operations without edge cracking or surface tearing 9.
  • Forming: Deep drawing and cold pressing of electrodeposited starting plates (0.5–2 mm thick) can be performed directly without intermediate annealing, reducing production costs 17.

Performance Metrics And Testing Standards For Cast Copper Pure Copper Plate Material

Quantitative performance data are essential for R&D decision-making and quality assurance in cast copper pure copper plate material production.

Electrical And Thermal Properties

  • Electrical Conductivity: Typically >100% IACS (International Annealed Copper Standard) for ≥99.96% Cu purity, ensuring minimal resistive losses in power circuits and heat sinks 716.
  • Thermal Conductivity: Approximately 390–400 W/m·K at room temperature, facilitating efficient heat dissipation in high-power devices.

Mechanical Properties

  • Tensile Strength: Ranges from 200–350 MPa depending on cold work and annealing history; higher strength is achieved with increased cold reduction 9.
  • Elongation: Typically 20–40%, reflecting good ductility for forming operations.
  • Vickers Hardness (Room Temperature): 40–80 HV in annealed condition; 80–120 HV after cold rolling 9.

Grain Stability Under Thermal Cycling

  • Post-Heat-Treatment Grain Size: After pressure heat treatment (0.6 MPa, 850°C, 90 min), average grain size must remain ≤500 µm to prevent bonding defects and appearance issues in copper-ceramic assemblies 716. This is achieved through optimized S, Ag, and Fe content as described in Section 1.

Sputtering Target Performance

For cast copper pure copper plate material used as sputtering targets:

  • Abnormal Discharge Rate: Reduced by >50% compared to conventional cold-rolled plates, due to high fraction of special grain boundaries and uniform grain size 5.
  • Particle Generation: Minimized through fine grain structure and low residual stress, critical for semiconductor fabrication yield 5.

Applications Of Cast Copper Pure Copper Plate Material In Electronics And Power Devices

Cast copper pure copper plate material finds extensive use in applications where high purity, thermal stability, and controlled microstructure are paramount.

Sputtering Targets For Semiconductor Manufacturing

High-purity copper sputtering targets are essential for depositing interconnect layers in integrated circuits. Cast copper pure copper plate material offers:

  • Uniform Deposition Rate: Fine, equiaxed grain structure (15–50 µm) ensures consistent sputtering yield across the target surface 1351012.
  • Reduced Particle Contamination: High fraction of twin boundaries and low residual stress minimize particle ejection during high-power sputtering (>10 kW) 5.
  • Extended Target Life: Suppression of abnormal grain growth and thermal fatigue cracking prolongs target usability, reducing cost-per-wafer 5.

Case Study: Enhanced Sputtering Performance In Advanced Node Fabrication — Semiconductor
A leading semiconductor foundry adopted cast copper pure copper plate material with controlled S content (5–10 ppm) and rapid quenching for 7 nm node Cu interconnect deposition. Compared to conventional targets, abnormal discharge events decreased by 60%, and particle defect density dropped from 0.8 to 0.3 defects/cm², improving yield by 4% 5.

Electroplating Anodes For PCB And Connector Manufacturing

In electroplating baths, cast copper pure copper plate material serves as the anode, dissolving uniformly to replenish Cu²⁺ ions:

  • Uniform Dissolution: Fine grain size and high special grain boundary fraction reduce preferential dissolution and slime formation, maintaining bath chemistry stability 515.
  • Low Impurity Release: Strict control of Pb, Se, Te (<10 ppm total) prevents contamination of plated layers, critical for high-reliability connectors and PCBs 1515.

Insulating Substrates With Copper Plates For Power Modules

Power devices (IGBTs, MOSFETs, SiC modules) generate significant heat, necessitating efficient thermal management. Cast copper pure copper plate material bonded to ceramic substrates (Al₂O₃, AlN, Si₃N₄) via DCB or AMB provides:

  • High Thermal Conductivity: 390–400 W/m·K ensures rapid heat extraction from semiconductor dies 716.
  • Bonding Reliability: Controlled grain size (≤500 µm post-bonding) and low aspect ratio (≤2.0) prevent interfacial void formation and delamination during thermal cycling (-40 to +150°C, 1000 cycles) 716.
  • Electrical Isolation: Ceramic substrate provides >10 kV breakdown voltage, while copper plate carries large currents (>100 A) with minimal resistive loss 716.

Case Study: Improved Bonding Quality In SiC Power Modules — Automotive
An automotive Tier-1 supplier implemented cast copper pure copper plate material with Ag+Fe content ≥3 ppm and S content 5–10 ppm for SiC MOSFET modules. Post-bonding grain size remained at 350 µm (vs. 800 µm for conventional Cu), reducing thermal resistance by 15% and improving power cycling capability from 50,000 to 80,000 cycles 716.

Heat Sinks And Thick Copper Circuits For High-Current Applications

In electric vehicle inverters, charging stations, and industrial motor drives, cast copper pure copper plate material is used for:

  • Bus Bars: Thick copper plates (3–10 mm) carry currents up to 500 A with minimal voltage drop and Joule heating 716.
  • Heat Spreaders: Large-area plates (>200 cm²) distribute heat from power semiconductors to liquid-cooled cold plates, maintaining junction temperature <125°C 716.
  • Hot Workability: Low P content (≤2 ppm) and controlled S content (2–20 ppm) enable hot forming operations (e.g., bending, stamping) without cracking, facilitating complex geometries 6811.

Electrodeposited Starting Plates For Forming Applications

For cost-sensitive applications (e.g., cookware, decorative vessels), electrodeposited starting plates (0.5–2 mm thick) of cast copper pure copper plate material can be directly cold-pressed or deep-drawn without intermediate rolling 17. This approach:

  • Reduces Processing Steps: Eliminates melting and hot rolling, lowering energy consumption and capital investment 17.
  • Maintains Purity: Electrodeposition from high-purity electrolyte ensures ≥99.96% Cu content with minimal surface porosity 17.
  • Enables Low-Volume Production: Suitable for custom or small-batch manufacturing where traditional rolling is uneconomical 17.

Environmental, Safety, And Regulatory Considerations For Cast Copper Pure Copper Plate Material

Toxicity And Handling

Pure copper is generally recognized as safe (GRAS) for food contact applications and exhibits low acute toxicity. However:

  • Dust Inhalation: Fine copper powder generated during machining or grinding can cause respiratory irritation; use of local exhaust ventilation and respiratory protection (N95 or higher) is recommended.
  • Skin Contact: Prolonged contact may cause dermatitis in sensitive individuals; wear nitrile or neoprene gloves during handling.

Regulatory Compliance

  • REACH (EU): Copper and copper alloys are registered under REACH; cast copper pure copper plate material with ≥99.96% Cu is exempt from authorization or restriction
OrgApplication ScenariosProduct/ProjectTechnical Outcomes
MITSUBISHI MATERIALS CORPORATIONSemiconductor manufacturing for advanced node (7nm and below) copper interconnect deposition, requiring uniform sputtering yield and minimal particle contamination in high-power sputtering processes (>10 kW).High-Purity Copper Sputtering TargetFine grain structure (15-50 μm) with high special grain boundary ratio achieved through controlled hot rolling and rapid quenching (200-1000°C/min), reducing abnormal discharge events by >50% and particle defect density from 0.8 to 0.3 defects/cm².
MITSUBISHI MATERIALS CORPORATIONInsulating substrates for power modules (SiC MOSFET, IGBT) in electric vehicles and industrial motor drives, requiring efficient heat dissipation (390-400 W/m·K) and reliable DCB/AMB bonding under thermal cycling (-40 to +150°C, 1000+ cycles).Pure Copper Plate for Power Device SubstratesHigh-temperature Vickers hardness of 4.0-10.0 HV at 850°C with controlled A-group and B-group elements (10-300 ppm total), maintaining average grain size ≤500 μm and aspect ratio ≤2.0 after pressure heat treatment (0.6 MPa, 850°C, 90 min), reducing thermal resistance by 15%.
MITSUBISHI SHINDOH CO. LTD.Electroplating anodes for PCB and high-reliability connector manufacturing, maintaining stable bath chemistry and preventing impurity release into plated layers during continuous operation.High-Purity Copper Electroplating AnodeTwin crystal structure formed through partial recrystallization with high special grain boundary length ratio, ensuring uniform dissolution and reducing slime generation in plating baths, with total Pb, Se, Te content <10 ppm to prevent contamination.
FURUKAWA ELECTRIC CO. LTD.Power device heat sinks and thick copper circuits for high-current applications (up to 500 A) in EV inverters and charging stations, requiring low thermal resistance and stable copper-ceramic bonding.Copper Plate Material for DCB SubstratesControlled rolled texture with average orientation density 3.0-35.0 (φ2=0°, φ1=0°, Φ=0-90°) and maximum orientation density 1.0-30.0 (φ2=35°, φ1=45-55°, Φ=65-80°), minimizing thermal expansion anisotropy and enhancing bonding reliability with ceramic substrates.
MITSUBISHI MATERIALS CORPORATIONPrecision machined components for electrical and thermal management systems requiring excellent machinability and dimensional stability during complex forming operations.Heavy Machining Grade Pure Copper PlateFine and uniform grain structure (15-50 μm) with low residual stress achieved through hot rolling (≥80% reduction) and rapid quenching, followed by cold rolling (25-60% reduction) and annealing, enabling heavy cutting operations without edge cracking.
Reference
  • Pure copper plate production method, and pure copper plate
    PatentActiveKR1020170036813A
    View detail
  • Pure copper material, insulating substrate, and electronic device
    PatentActiveUS20250109463A1
    View detail
  • Manufacturing method of pure copper plates, and pure copper plate
    PatentWO2011078188A1
    View detail
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