MAY 5, 202657 MINS READ
Positive tone photosensitive polyimide compositions are engineered multi-component systems designed to balance photosensitivity, resolution, and final film properties. The fundamental architecture comprises three essential elements: an alkali-soluble or solvent-soluble polyimide resin (or its precursor polyamic acid), a photoactive compound that modulates solubility upon irradiation, and a solvent system optimized for spin-coating and film uniformity 1,2,6.
The polyimide resin backbone in positive-tone systems must satisfy two competing requirements: sufficient solubility in organic solvents or aqueous alkali for processing, and robust thermal-mechanical performance post-cure. Solvent-soluble polyimides are synthesized via polycondensation of aromatic tetracarboxylic dianhydrides with aromatic diamines, where specific structural modifications impart solubility without sacrificing imide ring integrity 4,14. Key design strategies include:
Incorporation of flexible linkages: Ether (-O-), sulfone (-SO₂-), or isopropylidene (-C(CH₃)₂-) groups in the dianhydride or diamine monomers reduce chain rigidity and enhance solubility. For example, 4,4'-oxydiphthalic anhydride (ODPA) or bis(3,4-dicarboxyphenyl) ether dianhydride are frequently employed to introduce ether linkages 6,17.
Pendant phenolic hydroxyl groups: Introducing phenolic -OH groups in the main chain or side chains (via hydroxyl-functionalized diamines such as bis(3-amino-4-hydroxyphenyl)sulfone) provides alkali solubility and reactive sites for photosensitive ester formation 6,8. These hydroxyl groups enable aqueous base development (typically 2.38 wt% tetramethylammonium hydroxide, TMAH) and can be protected with acid-labile groups (e.g., tert-butoxycarbonyl, t-BOC) to modulate dissolution contrast 7,17.
Fluorinated segments for low dielectric constant: Incorporation of fluorine atoms—either in the dianhydride (e.g., 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 6FDA) or diamine (e.g., 2,2'-bis(trifluoromethyl)benzidine, TFMB)—reduces the dielectric constant to ≤2.90 and lowers moisture absorption, critical for high-frequency microelectronics 14,16. Patent US6803170B2 reports a fluorinated polyimide with 5–100 mol% fluorine-containing diamine achieving a dielectric constant of 2.85 at 1 MHz and water absorption <0.5 wt% after 24 h immersion 14.
Ester bonds in the main chain: Ester linkages (-CO-O-) within the polyimide backbone enhance solubility in common organic solvents (N-methyl-2-pyrrolidone, NMP; γ-butyrolactone, GBL) and provide additional sites for acid-catalyzed cleavage, improving positive-tone contrast 6,8. A representative structure is shown in Patent WO2010071056A1, where the polyimide contains both ester bonds and ortho- or meta-acyloxy substituents on aromatic rings 6.
The photosensitive component governs the solubility switch upon UV exposure (typically i-line, 365 nm, or broadband 300–450 nm). Two primary classes dominate positive-tone polyimide formulations:
Naphthoquinonediazide (NQD) compounds: These are esters of naphthoquinone-1,2-diazide-5-sulfonic acid or -4-sulfonic acid with polyhydric phenols (e.g., pyrogallol, tris(4-hydroxyphenyl)methane, or bisphenol derivatives) 1,2,10. Upon UV irradiation, NQD undergoes Wolff rearrangement to form a ketene intermediate, which rapidly reacts with ambient moisture to yield an indene carboxylic acid—a highly polar, alkali-soluble species 1,10. The dissolution rate of exposed regions in 2.38% TMAH can increase by 10–100× relative to unexposed areas, enabling high-resolution patterning 1,2.
Dipole moment optimization: Patent KR20100056753A specifies that phenolic esters with dipole moments between 0.1 and 1.6 Debye exhibit optimal photosensitivity and dissolution contrast, as excessive polarity causes premature dissolution while insufficient polarity yields poor development 10.
Loading ratio: Typical NQD content ranges from 10 to 50 wt% relative to the polyimide resin. Patent WO2001040343A1 reports that 1–100 parts by weight of NQD per 100 parts of polyimide resin (combined with polyamic acid precursor) achieves sensitivity of 100–300 mJ/cm² and resolution down to 3 μm line/space 4.
Photoacid generators (PAGs): PAGs such as triarylsulfonium salts, diaryliodonium salts, or sulfonate esters (e.g., THBP-200, a tris(4-hydroxyphenyl)methane-based PAG) generate strong acids (e.g., triflic acid, CF₃SO₃H) upon photolysis 7,12,17. The liberated acid catalyzes deprotection of acid-labile groups (e.g., t-BOC, tetrahydropyranyl) on the polyimide backbone, converting hydrophobic protected sites into hydrophilic carboxylic acids or phenols, thereby increasing alkali solubility in exposed regions 7,17.
To fine-tune photosensitivity, adhesion, and film quality, positive-tone formulations incorporate:
Phenolic compounds: Low-molecular-weight phenols (e.g., bisphenol A, novolac resins, or compounds represented by specific structures in Patent KR20100056753A) act as dissolution inhibitors in unexposed regions and enhance NQD efficiency by hydrogen bonding 2,11. Patent KR20110063627A reports that adding 5–20 wt% of phenolic additives (selected from four specific chemical structures) improves residual film thickness after development by 15–25% and boosts adhesion to silicon substrates 11.
Sulfonic acid ester compounds: These serve as latent acid precursors that thermally decompose at 80–120°C during post-exposure bake (PEB), generating additional acid to amplify deprotection and improve sensitivity 15. Patent KR20110005690A shows that 3–10 wt% sulfonic acid ester reduces required exposure dose by 30–40% while maintaining >95% residual film rate 15.
Solvents: N-methyl-2-pyrrolidone (NMP), γ-butyrolactone (GBL), dimethylacetamide (DMAc), and cyclopentanone are standard solvents, often blended to optimize viscosity (10–100 cP for spin-coating) and evaporation rate 1,2,6. Solvent content typically constitutes 60–80 wt% of the total composition to achieve 5–50 μm wet film thickness 1.
The photochemical transformation underpinning positive-tone behavior involves a cascade of molecular events triggered by UV photons, culminating in a dramatic solubility shift that enables selective pattern development.
Upon absorption of a 365 nm photon (i-line), the naphthoquinonediazide chromophore undergoes homolytic cleavage of the diazo group, releasing nitrogen gas (N₂) and forming a highly reactive carbene intermediate 1,10. This carbene rapidly rearranges via a Wolff rearrangement to a ketene species, which is electrophilic and reacts with water (from ambient humidity or residual solvent) to form an indene-3-carboxylic acid derivative 1,10. The carboxylic acid is a strong base-soluble moiety, increasing the dissolution rate in aqueous TMAH by 1–2 orders of magnitude compared to the hydrophobic NQD ester 1,2.
The quantum efficiency of this process is typically 0.3–0.6, meaning 30–60% of absorbed photons lead to productive photochemistry 10. Factors influencing efficiency include:
Phenolic ester structure: Bulky phenolic cores (e.g., tris(4-hydroxyphenyl)methane) sterically hinder back-reaction of the ketene with the phenol, improving net conversion 10.
Film thickness and optical density: In thick films (>10 μm), inner layers receive attenuated UV dose due to absorption by upper layers; thus, NQD loading and exposure dose must be optimized to ensure complete photolysis throughout the film depth 12.
In PAG-based systems, photogenerated acid (e.g., CF₃SO₃H from triarylsulfonium triflate) protonates acid-labile protecting groups such as t-BOC or acetal linkages on the polyimide backbone 7,17. Protonation destabilizes the C-O bond, leading to heterolytic cleavage and release of isobutylene (from t-BOC) or alcohol (from acetals), leaving behind a carboxylic acid or phenol 7. This deprotection is thermally amplified during post-exposure bake (PEB, typically 90–110°C for 60–120 s), where acid diffusion and catalytic turnover enable a single photogenerated acid molecule to deprotect multiple sites (chemical amplification factor of 5–20) 7,17.
The dissolution rate enhancement depends on the degree of deprotection: Patent JP2009098658A reports that 40–60% deprotection of phenolic -OH groups increases TMAH dissolution rate from <1 nm/s (unexposed) to >200 nm/s (exposed), yielding a contrast ratio sufficient for 2 μm line/space patterns 17.
The development process in aqueous base (2.38% TMAH, 23°C, 60–180 s) selectively removes exposed regions while preserving unexposed areas. The dissolution rate R (nm/s) follows an empirical power-law relationship with the concentration of ionizable groups (carboxylic acids, phenols) generated by photolysis:
R = k [COOH]^n
where k is a rate constant (dependent on developer concentration, temperature, and polymer structure) and n is typically 2–4, reflecting cooperative ionization and chain disentanglement 6,8. High n values (>3) indicate steep dissolution contrast, desirable for high-resolution patterning 6.
Patent WO2010071056A1 demonstrates that polyimides with both ester bonds and phenolic -OH groups exhibit n ≈ 3.5, enabling 3 μm feature resolution with <5% linewidth variation across a 200 mm wafer 6. In contrast, polyimides lacking phenolic groups show n ≈ 2.0 and require longer development times, increasing risk of pattern undercutting 6.
The preparation of positive-tone photosensitive polyimide involves multi-step organic synthesis, careful control of molecular weight, and functionalization to introduce photosensitive or alkali-soluble groups.
The foundational step is the synthesis of polyamic acid (PAA), the soluble precursor to polyimide, via polycondensation of aromatic tetracarboxylic dianhydrides with aromatic diamines in polar aprotic solvents (NMP, DMAc) at 0–60°C 4,14,18. Stoichiometric balance (dianhydride:diamine molar ratio 1.00–1.05) and monomer purity (>99.5%) are critical to achieve high molecular weight (Mw 30,000–100,000 Da) and low polydispersity (Mw/Mn < 2.5) 4,14.
For positive-tone systems, specific monomer selections include:
Hydroxyl-functionalized diamines: Bis(3-amino-4-hydroxyphenyl)sulfone or 3,3'-dihydroxy-4,4'-diaminobiphenyl introduce phenolic -OH groups directly into the polyimide backbone, enabling alkali solubility post-imidization 6,8. Typical incorporation is 20–80 mol% of total diamine to balance solubility and thermal stability 6.
Fluorinated monomers: 6FDA (hexafluoroisopropylidene diphthalic anhydride) or TFMB (trifluoromethyl benzidine) reduce dielectric constant and moisture uptake. Patent WO2001001513A1 reports that 50 mol% 6FDA in the dianhydride mixture yields a cured polyimide with ε = 2.85 (1 MHz), CTE = 45 ppm/°C, and tensile modulus = 3.2 GPa 16.
Conversion of polyamic acid to polyimide (imidization) involves cyclodehydration of the amic acid groups to form imide rings, releasing water. Two routes are employed:
Thermal imidization: Heating PAA films at 150–350°C in a stepwise ramp (e.g., 150°C/30 min, 250°C/30 min, 350°C/60 min) under nitrogen or vacuum drives off water and completes ring closure 4,18. This method yields high imidization degree (>98%) and excellent film properties (tensile strength 100–200 MPa, elongation 30–80%, glass transition temperature Tg 280–400°C) 4,18. However, high-temperature processing is incompatible with temperature-sensitive substrates (e.g., flexible polyimide films, low-Tg polymers) and can cause film shrinkage (5–15% linear dimension change), degrading pattern fidelity 15,18.
Chemical imidization: Treatment of PAA with dehydrating agents (acetic anhydride, Ac₂O) and catalysts (pyridine, triethylamine) at 60–120°C achieves imidization at lower temperatures 3,18. Patent TW202232947A describes a polyimide
| Org | Application Scenarios | Product/Project | Technical Outcomes |
|---|---|---|---|
| DONGWOO FINE-CHEM CO. LTD. | Microelectronics fabrication requiring fine pattern formation, interlayer dielectrics, and passivation layers in semiconductor devices where alkali-developable processing is essential. | Positive Photosensitive Polyimide Composition Series | Achieves high sensitivity and high resolution with excellent electrical insulation properties; solubility in alkali aqueous solution increases upon optical irradiation enabling positive-tone pattern formation with naphthoquinonediazide photosensitive materials. |
| LG CHEM LTD. | Advanced semiconductor packaging and flexible circuit substrates requiring sub-5 μm resolution with low coefficient of thermal expansion and simplified processing. | Positive-Type Photosensitive Polyimide Resin System | Incorporates acid-labile groups bonded to polyimide resin enabling photoacid-catalyzed deprotection for enhanced dissolution contrast and pattern resolution without high-temperature imidization prior to development. |
| TOYOBO CO LTD. | Temperature-sensitive substrate applications including flexible displays, MEMS devices, and multilayer circuit boards where low-temperature processing (<150°C) is critical. | Positive-Type Photosensitive Polyimide with Benzoazole Skeleton | Features benzoazole skeleton in main chain with acid-cleavable OR groups; enables fine pattern processing with heat resistance and linear expansion coefficient matching substrate without high-temperature imidization; alkali-developable. |
| NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY | Thick-film applications in power electronics, high-density interconnects, and 3D packaging where precise patterning in films exceeding 10 μm thickness is required. | THBP-200 Based Positive Photosensitive Polyimide | Utilizes THBP-200 photoacid generator at 25-55 wt% achieving dissolution rate contrast exceeding 50:1; enables high-definition patterning in thick films (10-20 μm) with 2 μm feature resolution. |
| PI R & D CO. LTD. | High-frequency microelectronics and RF applications requiring ultra-low dielectric constant materials for interlayer dielectrics in 5G devices and high-speed digital circuits. | Photosensitive Low-Permittivity Polyimide | Fluorinated polyimide formulation achieving dielectric constant ≤2.90 at 1 MHz with positive photosensitivity via photoacid generator; provides low moisture absorption (<0.5 wt%) and excellent dimensional stability. |