Mehrschichtiges moiré-ziel

Abstract

A multi-layered moir target, useful in the calculation of misregistration between at least first, second and third layers being formed on a semiconductor device wafer, including at least one group of periodic structure stacks, each including a first stack, including a first stack first periodic structure (S1P1) having an S1P1 pitch along a first axis, a second stack, including a second stack first periodic structure (S2P1) having an S2P1 pitch along a second axis and a third stack, including a third stack first periodic structure (S3P1) having an S3P1 pitch along a third axis, the first axis being parallel to an x-axis or a y-axis, and at least one of the stacks including a second periodic structure having a second periodic structure pitch along at least one fourth axis parallel to the first axis and co-axial with one of the axes.

Description

MULTI-LAYERED MOIRE TARGETS A D METHODS FOR USING THE SAME IN MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICESREFERENCE TO RELATED APPLICATIONS

[0001] Reference is hereby made to U.S Provisional Patent Application SerialNo. 62 / 872,422, filed July 10, 2019 and entitled A NEW MULTILAYER GRATING OVER GRATING OVERLAY MEASUREMENT TARGET DESIGN, the disclosure of which is hereby incorporated by reference and priority of which is hereby claimed,

[0002] Reference is also made to the following patents and patent applications of the Applicant, which ate related to the subject matter of the present application, the disclosures of which are hereby incorporated by reference;US. Patent No. 7,440,105 entitled CONTINUOUSLY VARYING OFFSET MARK AND METHODS OF DETERMINING OVERLAY; US. Publishe Patent Application No. 2018 / 0188663 entitled DEVICE¬LIKE METROLOGY TARGETS;U.S, Provisional Patent Application Serial No. 62 / 829,839, filed April 5, 2019 and entitled NEW MULTILAYER GRATING OVER GRATINGOVERLAY MEASUREMENT TARGET DESIGN; and . U.S. Provisional Patent Application Serial No. 62 / 898,980, filedSeptember 11, 2019 and entitled IMAGING OVERLAY TARGETS INCLUDING MOIRE ELEMENTS AND ROTATIONAL SYMMETRY ARRANGEMENTS. FIELD OF THE INVENTION[00031 The present invention relates to measurement of misregistration in the manufacture of semiconductor devices generally. iBACKGROUND OF THE INVENTION

[0004] Various methods and systems are known for measurement of misregistration in the manufacture of semiconductor devices. SUMMARY OF THE INVENTION

[0005] The present invention seeks to provide improved methods and systems for measurement of misregistration in the manufacture of semiconductor devices

[0006] There is thus provided in accordance with a preferred embodiment of the present invention a mute-layered moire target useful in the calculation of the misregistration between at least a first layer, a second layer and third layer, the first layer, second layer and third layer being formed on semiconductor device wafer, the semiconductor device wafer defining an x-y plane, the multi-layered moire target including a t least one group of periodic structure stacks, each of the at least one group including a first stack of periodic structures, including at least a first stack first periodic structure (S I P ! ) formed together with at least one of the first layer, the second layer and the third layer, the SI P I having an SI PI pitch along a first axis, a second stack of periodic structures, including at least a second stack first periodic structure (S2P1) formed together with at least one of the first layer, the second layer and the thir layer, the S2P1 having an S2P1 pitch along a second axis and a third stack of periodic structures, including at least a. third stack first periodic structure (S3P1) formed together with at least one of the first layer, the second layer and the third layer, the S3P1 having an S3 PI pitch along a third axis the first axis being parallel to either an x-axis or a y-axis when the target is imaged in the x-y plane, the second axis and the third axis being parallel to the first axis when the target is imaged in the x-y plane and at least one of the first, second and third stacks including a second periodic structure having a second periodic structure pitc along at least one fourth axis parallel to the first axis and co-axial with one of the first axis, the second axis and the third axis when the target is imaged in the x-y plane.

[0007] to accordance with a preferred embodiment of tl e present invention the first layer defines a first generally planar surface parallel to the x-y plane, the second layer defines a second generally planar surface parallel to the x-y plane, the third layer defines a third generally planar surface parallel to the x-y plane, the first axis lies in a first plane parallel to one of an x-x plane or a y-z plane, the one of an x~z plane or a y-z plane, together with the x-y plane, defining a three- dimensional x~y~z coordinate system, the second axis lies in a second plane parallel to the first plane, the third axis lies in a third plane parallel to the first plane and the at least one fourth axis lies m a respective one of the first plane, toe second plane and the third plane and is parallel to a respecti ve one of the first axis, the second axis or the third axis.

[0008] Preferably, the first stack of periodic structures includes the SIP I formed together with toe first layer and a first stack second periodic structure (SIP2) formed together with toe second layer, the S 1.P2 having an SI P2 pitch along a first one of the at least one fourth-axis being co-axial with the first axis when the target is imaged in the x-y plane, the second stack of periodic structures includes the S2P1 formed together with the second layer and a second stack second periodic structure (S2P2) formed together with the third layer, the S2P2 having an S2P2 pitch along a second one of the at least one fourth axis being co-axial with the second axis when toe target is imaged in the x-y plane and the third stack of periodic structures includes the S3P1 formed together with the first layer and a third stack second periodic structure (S3P2) formed together with the third layer, the S3P2 having an S3P2 pitch along a thir one of the at least one fourth axis when toe target is imaged in the x-y plane,

[0009] Preferably, the S2P3 pitch is related to the SIP2 pitch by a second stack multiplicative factor, the S2P2 pitch is related to the SI P! pitch by toe second stack multiplicative factor, the S3 PI pitch is related to the SIP1 pitch by a third stack multiplicati ve factor and toe S3 pitch is related to the SI 2- pitch by the third stack multiplicative factor; to accordance with a preferred embodiment of the present invention, the second stack multiplicative factor is equal to one and the third stack multiplicative factor is equal to one.

[0010] to accordance with a preferred embodiment of toe present invention the first stack of periodic structures includes the SlFl formed together with the first layer and a first stack second periodic structure (S1P2) formed together with the second layer, the SIP2 having an SIP2 pitch along a first one of the at least one fourth axis, the second stack of periodic structures includes the S2P! formed together with the first layer and a second stack second periodic structure ( S2P2) formed together with the secon layer, the S2P2 having an S2P2 pitch along a second one of the at least one fourt axis and the third stack of periodic structures includes the S3P1 formed together with the second layer and a third stack second periodic structure (S3P2) formed together with the third layer, the S3P2 having anS3P2 pitch along a thir one of the at least one fourt axis.[001 ! j in accordance wit a preferred embodiment of the present invention the first stack of periodic structures includes the S I PI formed together with the first layer and a first stack second periodic structure (SI P2) formed together with the second layer, the S I P2 having a SIP2 pitch along a, first one of the at least on fourth axis, the second stack of periodic structures includes the S2P1 formed together with the first layer and a second stack second periodic structure (S2P2) formed together with the second layer, the S2P2 having an S2P2 pitch along a second one of the at least one fourth axis and the third stack of periodic structures includes the S3P1 formed together with the second layer and a third stack second periodic structure (S3P2) formed together with the first layer, the S3P2 having an S3P2 pitch along a third one of the at least one fourth axis

[0012] Preferably, the S3P1 pitch is related to the S2P2 pitch by a third stack multiplicative factor and the S3P2 pitch is relate to the S2P1 pitch by the third stack multiplicative factor to accordance wife a preferred embodiment of the present invention, the third stack multiplicative factor is equal to one. In accordance with a preferred embodiment of the present invention the SIP! pitch is the same as tire S2P2 pitch an the S.1F2 pitc is the same as the S2P! pitch. Alternatively, the SI P! pitch is the same as the S2P1 pitch, the S.IP2 pitch differs front the Sl Pl pitch by an additive term, the S2F2 pitch differs from the SIP!pitch by the additive ter , the S3P1 pitch differs from the S iPl pitch by the additive term and the S3P2 pitch is fee same as the SI PI pitch,[0013} hi accordance with a preferred embodiment of the present invention the first Stack of periodic Structures includes the Si P formed together with the second layer, the second stack of periodic structures includes the S2PI formed together with the first layer and a second stack second periodic structure (S2P2) formed together wife the second layer, fee S2P2 having an S2P2 pitch along a second one of fee at least one fourth axis and the third stack of periodic structures includes the S3P3 formed together with the second layer and a third stack second periodic structure (S3P2) formed together with the third layer, fee S3P2 having an S3P2 pi tch along a third one of the at least one fourth axis in accordance with a preferred embodiment of the present invention the S2P1 pitch is the same as the S3P2 pitch and the S2P2 pitch is the same as the S3P1 pitch,

[0014] In accordance with a preferred embodiment of the present invention the first stack of periodic structures includes the SIP! formed together with the second layer, the second stack of periodic structures including the S2P1 formed together with fee first layer an fee third stack of periodic structures includes he S3P1 formed together with the second layer and a third stack second periodic structure (S3P2) formed together wife fee third layer, fee S3P2 having an S3P2 pitch along the at least one fourth axis.

[0015] In accordance with a preferred embodiment of fee present invention fee first stack of periodic structures includes the SI P I formed together with the first layer, fee second stack of periodic structures including fee S2P1 formed together with fee first layer and the third stack of periodic structures includes the S3P1 formed together with the first layer and a third stack second periodic structure (S3 P2) formed together wife fee third layer, fee S3P2 having an S3P2 pitch along the at least one fourth axis.

[0016] In accordance with a preferred embodiment of fee present invention the first stack of periodic structures includes the S I P ! formed together with the second layer, fee second stack of periodic structures including the S2P1 formedtogether with the first layer and file third stack of periodic structures includes the S3Fl formed together with the second layer and third stack second periodic structure (S3P2) formed together with the first layer, the S3P2 having an S3P2 pitch along the at least one fourth axis.

[0017] In accordance with a preferred embodiment of the present invention, the first stack of periodic structures includes the S1P1 formed together with the first layer, the second stack of periodic structures includes the S2P1 formed together wit the first layer and a second stack second periodic structure (S2P2) formed together with the secon layer, the S2P2 having an S2P2 pitch along a first one of the at least one fourth axis and tire third stack of periodic structures includes theS3P1 formed together with the second layer and a third stack second periodic structure (S3P2) formed together with the third layer, the S3P2 having an S3P2 pitch along a second one of the at least one fourth axis.

[0018] Preferably, the at least one group of periodic structure stacks includes at least one first group of periodic stacks in which the first axis is parallel to the x- axis when the target is imaged in the x-y plane and at least one second group of periodic stacks in which the first axis is.parallel to the y-axis when the target is imaged in the x~y plane. Additionally., the at least one First group of periodic stacks and the at least one second group of periodic stacks are identical except for their orientation.

[0019] In accordance with a preferred embodiment of the present invention the target is characterized by mirror symmetry in accordance with a preferred embodiment of the present invention the target is characterized by rotational symmetry 10020] There is also provide in accordance with another preferred embodiment of the present invention a multi-layered moire target useful in the calculation of the misregistration between at least a first layer, a second layer, third layer and a fourth layer, the first layer, second layer, third layer and fourth layer being forme on a semiconductor device wafer, the semiconductor device wafer defining an x-y plane, the multi-layered moire target including at least one groupof periodic structure stacks, each of the at least one group including a first stack of periodic structures, including at least a first stack first periodic structure (SlPi) formed together with at least one of the first layer, the second layer, the third layer and the fourt layer, the S i P I having an SIP I pitch along a first axis, a second stack of periodic structures, including at least a second stack first periodic structure (S2PI) formed together with at least one of the first layer, the second layer, the third layer and the fourth layer, the S2PI having an S2P1 pitch along a second axis, a third stack of periodic structures, including at least a third stack first periodic structure (S3P1) formed together with at least one of the first layer, the second layer, the third layer and the fourt layer, the S3 PI having an S3? I pitch along a thir axis and a fourth stack of periodic structures, including at least a fourth stack first periodic structure (S4P I ) formed together with at least one of the first layer, the second layer, the third layer and the fourth layer, the S4P1 having an S4PI pitch along a fourth axis, the first axis being parallel to either an x-axis or a y-axis when the target is imaged in the x-y plane, the second axis, the third axis and the fourth axis being parallel to the first axis when the target is imaged in the x-y plane, and at least one of the first, second, third and fourth stacks including a second periodic structure having a second periodic structure pitch along at least one fifth axis parallel to the first axis and co-axial with one of the first axis, the second axis, the third axis and the fourth axis when the target is image in the x-y plane

[0021] in accordance with a preferred embodiment of the present invention the first layer defines a first generally plana surface parallel to the x-y plane, the second layer defines a second generally planar surface parallel to the x-y plane, the third layer defines a third generally planar surface parallel to the x-y plane the fourth layer defines a first generally planar surface parallel to the x-y plane, the first axis lies in a first plane parallel to one of an x~z plane or a y-z plane, the one of an x-z plane or a y-z plane, together with the x-y plane, defining a three- dimensional x-y-z coordinate system, the second axis lies in a second plane parallel to the first plane, the third axis lies in a third plane parallel to the first plane, the fourth axis lies hi a third plane parallel to the fust plane and die at least one fifth axis lies in a respective one of the first plane, the second plane, the thirdplane and the fourth plane and is parallel to a respective one of the first axis, the second axis, thirds axis or die fourth axis.[0022} In accordance with a preferred embodiment of the present invention the first stack of periodic structures includes th SIP! formed together with·the first layer and a first stock second periodic structure (S 1P2) formed together with the second layer, the S1P2 having an S1P2 pitch along a first one of the at least one fifth axis being co-axial with the first axis when the target is imaged in the x-y plane, the second stack of periodic structures includes the S2P1 formed together -with the first layer and a second stack secon periodic .structure (S2P2) formed together with the second layer, the S2P2 having an S2P2 pitch along a second one of the at least one fift axis being co-axial with the second axis when the target is imaged in the x-y plane, the third stack of periodic structures includes the S3P1 formed together with the second layer and a third stack second periodic structure (S3P2) formed together with the third layer, the S3P2 having an S3P2 pitch along a third one of the at least one fift axis being co-axial with the third axis when th target is imaged in the x-y plane and the fourth stack of periodic· structures includes die S4PI fanned together with the third layer and a fourth stack second periodic structure (S4P2) formed together with the fourth layer, the S4P2 having an S4P2 pitch along a fourth one of the at least one fifth axis being co-axial with the fourth axis when the target is imaged in the x-y plane.

[0023] In accordance with a preferred embodiment of the present invention the S3P1 pitch is related to the S2P2 pitch by a third stock multiplicative factor, the S3.P2 pitch is relate to the S2P1 pitch by the third stock multiplicative factor, the S4P1 pitch is related to the S2P1 pitch by a fourth stack multiplicative factor and the S4P2 pitch is related to the S2P2 pitch by the fourth stack multiplicative factor.[ 0024} In accordance with a preferred embodiment of the present invention the first stack of periodic structures includes the SIP ! formed together with the first layer and a first stock second periodic structure (S1P2) formed together with the second layer, the S 1 P2 having an S 1 P2 pitch along a first one of the at least one fifth axi being co-axial with the first axi whe the target is imaged in the x-y plane, the second stack of periodic structures includes the S2P1 formed togetherwit the second layer, the third stack of periodic structures includes the S3P1 fonhed together with the second layer and a third stack second perio ic structure (S3P2) formed together with the third layer, the S3P2 having an S3P2 pitch along a second one of the at least one fifth axis being co-axial with the third axis when the target is imaged in the x-y plane and the fourth stack of periodic structures includes the S4P 1 formed together with the third layer and a fourth stack second periodic structure (S4P2) formed together with the fourth layer, the S4P2 having an S4P2 pitch along a third one of the at least one fifth axis being co-axial with the fourth axis when the target is imaged in the x-y plane. [0025 j Preferably»the S4PI pitch is related to the S3P2 pitch by a fourth stack multiplicative factor and the 54P2 pitch is related to the S3P 1 pitch by the fourth stack multiplicative factor.

[0026] in accordance with a preferred embodiment of the present invention the first stack of periodic structures includes the SI P i formed together with the first layer and a first stack second periodic structure (S1P2) formed together with the second layer, tire S 1 P2 having an S1 P2 pitch along a first one of the at least one fifth axis being co-axial with the first axis when t e target is imaged in the x-y plane, the second stack of periodic structures includes the S2P1 formed together with the second layer and a second stack second periodic structure (S2P2) formed together with the third layer, the S2P2 having an S2P2 pitch along a second one of the at least one fifth axis being co-axial with the second axis when the target is imaged in the x-y plane, the third stack of periodic structures includes the S3P1 formed together with the first layer and a third stack second periodic: structure (S3P2) formed together with the third layer, the $3P2 having an S3P2 pitch along a third one of the at least one filth axis being co-axial with the third axis when the target is imaged i the x-y plane and the fourth stack of periodic structures includes the S4P1 formed together with the third layer and a fourth stack second periodic structure (S4P2) formed together with the fourth layer, the S4P2 having an S4P2 pitch along a fourth one of the at least one fifth axis being co-axial with the fourth axis when the target is imaged in the x-y plane.

[0027] Preferably, the S2P I pitch is related to the S1P2 pitch by a second stack multiplicative factor, the S2P pitch is related to the SI P I pitch by the second stack multiplicative factor, the S3P! pitch is related to the Si PI pitch by a thir stack multiplicative factor, the S3P2 pitch is related to the S1P2 pitch by the third stack multiplicative factor, the S4P1 pitch is related to the S1P2 pitch by a fourth stack multiplicative factor and the S4P2 pitch is related to tire S I PI pitch by the fourth stack multiplicative factor.10028] In accordance with a preferred embodiment of the present invention the first stack of periodic structures includes the SIPI fanned together with the first layer and a first stack second periodic structure (S IP2) formed together with the second layer, the S1P2 having an SI P2 pitch along a first one of the at least one filth axis being co-axial with the first axis when the target is imaged i the x-y plane, the second stack of periodic structures includes the S2P1 formed together with the second layer, the third stack of periodic structures includes the S3P! formed together with the third layer and the fourth stack of periodic structures includes the S4P1 formed together with the fourth layer.10029] In accordance with a preferred embodiment of the present inventio the first stack of periodic structures includes the SIPI formed together with the first layer and a first stack second periodic structure (S 1P2) formed together with the second layer, the Si P2 having an S1P2 pitch along a first one of the at least one fifth axis being co-axial with the first axis when the target is imaged in the x-y plane, the second stack of periodic structures includes the S2P1 formed together with the second layer, the third stack of periodic structures includes the S3P1 formed together with the second layer and the fourth stack of periodic structures includes the S4PI formed together with the fourth layer.

[0030] hi accordance with a preferred embodiment of the present invention the first stack of periodic structures includes the SIPI formed together with the first layer and a first stack second periodic structure (S1P2) formed together with the second layer, the S 1 P2 having an S 1 P2 pitch along a first one of the at least one frith axi being co-axial with the first axi when the target is imaged in the x-y plane, the second stack of periodic structures includes the S2P1 formed together towith the second layer, the third stack of periodic structures includes the S3P1 formed together with the third layer and the fourth stack of periodic structures includes the S4P.I formed together with the second layer.

[0031] hi accordance with a preferred embodiment of the present invention the first stack of periodic structures includes the SIPi formed together with the first layer and a first stack second periodic structure (SIP2) formed together with the second layer, the S1 P2 having an S1P2 pitch along a first one of the at least one fifth axis being co-axial with the first axis when the target is imaged in the x-y plane, the second stack of periodic structures includes the S2P1 formed together with the second layer, the third stack of periodic structure includes the S3P1 formed together with the third layer and the fourth stack of periodic structures includes the S4P j formed together with the third layer.

[0032] In accordance with a preferred embodiment of the present invention the at least one group of periodic structure stacks includes at least one first group of periodic stacks in which the first axis is parallel to the x-axis when the target is imaged in the x-y plane and at least one second group of periodic stacks in which the first axis is parallel to the y-axis when the: target is imaged in the x-y plane. Additionally, the at least one first group of periodic stacks and die at least one second group of periodic stacks are identical except for their Orientation

[0033] Preferably, the target is characterized by mirror symmetry in accordance with a preferred embodiment of the present invention the target is characterized by rotational symmetry.

[0034] There is further provided is accordance with yet another preferred embodiment of the present invention a multi-layered moire target useful in the calculation of the misregistration between at least a first layer, a second layer, a third layer and a fourth layer, the first layer, second layer, third layer and fourth layer being formed on a semiconductor device wafer, the semiconductor device wafer defining an x-y plane, the multi-layered meife target including at leas one group of periodic structure stacks, each of the at least one group including a first stack of periodic structures, including at least a first stack first periodic structurers(S3 Pi) formed together with at least oae of the first layer, the second layer, the third layer to the fourt layer, the SI PI having an S 1P1 pitch along a first axis, a second stack of periodic structures including at least a second stack first periodic structure (S2PI) formed together with at least one of the first layer, the second layer, the third layer and the fourth layer, the S2PI haying an S2P! pitch along a second axis and a third stack of periodic structures, including at least a third stack first periodic structure (S3P!) formed together with at least one of the first layer, the second layer, the third layer and the fourth layer, the S3PI having to S3P1 pitch along a third axis, the fust axis being parallel to either an x-axis or a y-axis when the target is imaged in the x~y plane, the second axis and the third axis being parallel to the first axis when the target is Imaged in the x-y plane, and at least one of the first, second and third stacks including a second periodic structure having a second periodic structure pitch along at least one fourth axis parallel to the first axis and co-axial with one of the first axis the second axis and the third axis when the target is imaged in the x-y plane. 5) In accordance with a preferred embodiment of the present invention the first stack of periodic structures includes the SIP! formed together with the first layer and a first stack second periodic structure (S1P2) formed together with the second layer, the S1P2 having an SIP2 pitch along a first one of the at least one fourth axis, the second stack of periodic structures includes the S2PI formed together with the first layer and a second stack second periodic structure (S2P2) formed together with the third layer, the S2P2 having an S2P2 pitch along a second one of the at least one fourth axis and the third stack of periodic structures includes the S3PI formed together with foe first layer and a third stack second periodic structure (S3P2) formed together wit the fourth layer the S3P2 having an S3P2 pitch along a third one of the at least one fourth axis. in accordance with a preferred embodiment of the present invention the at least one group of periodic structure stacks includes at least one first group of periodic stacks in which the first axis is parallel to the x~axis when the target is imaged in the x-y plane and at least one second grou of periodic stacks in which the first axis is parallel to the y-axis when the target is imaged in the x- plane.nAdditionally, the at least one first group of periodic stacks and the at least one second group of periodic stacks are identical except for their orientation.BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The present invention will be understood and appreciated more fully from the following detailed description, taken in conjunction with the drawings in which:Fig. 1 is a simplified illustration of a first embodiment of a multi-layered moire target of the present invention; Figs 2A, 2B, 2C and 2D are simplified respective top view, first sectional side view, secon sectional side view and third sectional side view illustrations of another embodiment of a multi-layered moire target of (he present invention, Figs. 2B, 2C and 2D being taken along lines B ~ B, C - C and D ~ D in Fig. 2A, respectively; Fig. 3A is a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Fig I or of Figs. 2A - 2D is formed;Figs 3B and 3C are simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig. 3 A, respectively; Fig. 4 is a simplified i I stration of another embodiment of a multi-layered moire target of the present invention;Figs. 5 A, 5B, 5C and 5D are simplified respective top view, first sectional side view, second sectional side view and third sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention. Figs. 5B, 5C and 5D being taken along lines B - B, C - C and D - D in Fig. 5 A, respectively;nFig. 6A is a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Fig. 4 or of Figs. 5A ~ 5D is formed;Figs. 6B and (>C are simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig. 6A, respectively;Fig. 7 is a simplified illustration of another embodiment of a multi-layered moire target of the present invention;Figs. 8A, 8B, 8€ and 80 are simplified respective top view, first sectional side view, second sectional side view and third sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention. Figs8B, 8C and 80 being taken along lines B - B, C - C an 0 - 0 in Fig. 8A. respectively;Fig. 9A is a simplified flowchart illustrating a preferred method of calculating misregistratio between layers on which the multi-layered moire target of Fig. 7 or of Figs. 8 A ··· 80 is formed;Figs. 9B and 9C are simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig. 9 A, respectively;Fig. 10 is a simplified illustration of another embodiment of a multilayered moire target of the present invention; Figs. I I A, I IS, I IC and 110 are simplified respective top view, first sectional side view, second sectional side view and third sectional side view illustrations of another embodiment of a multi- layered moire target of the present invention, Figs. 1 IB, 1 1C and 1 ID being taken along lines B - B, C - C and D - 0 in Fig ϊ I A, respectively; Fig. 12 A is a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Fig. 10 or of Figs, 11 A - 110 is formed;Figs. I2B and !2€ are simplified pictorial illustrations of first and second embodiments of a portion of lire method of Fig. I rres ectively;Fig. 13 is a simplified illustration of another embodiment of a multi layered moire target of the present: in vention;Figs. 14A, 148, 14C and 14D are simplified respective top view, first sectional side view, second sectional side view and third sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention. Figs. 14B, 14C and 14D being taken along lines B - B, C - C and D - D in Fig. 14A, respectively;Fig. 15A is a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Fig. 13 or of Figs. 14A ~ 14D is formed;Figs. 1 SB and 15C are simplified pictorial il lustrations of first and second embodiments of a portion of the method of Fig. 15 A, respectively;Fig. 16 is a simplified illustration of another embodiment of a multilayered moir target of the present invention;Figs. G7A, 17B, 17C and 17D are simplified respective top view, first sectional side view, second sectional side view and third sectional side view illustrations of another embodiment of a multi-layere moird target of the present invention. Figs. 17B, 17C and 17D being taken along lines B - B, C - C and D --- D in Fig 17 A, respectively;Fig. 18A is a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Fig 16 or of Figs. 17A - 17D is formed;Figs. 18B and ISC are simplified pictorial illustrations of first and secon embodiments of a portion of the method of Fig. 18 A, respectively ;!5Figs. 19 A, 198, 1 C sad 19D are simplified respective top view, first sectional side view, second sectional side view and third sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention, Figs. 198, 19C and I D being taken along lines B - B, C ~ C and D ~ D in Fig. 19 A, respectively;Figs. 20A, 20B, 20C and 20D are simplified respective top view, first sectional side view, secon sectional side view and third sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention. Figs, 20B, 2QC and 20D being takes along lines B - B,€ -- C and D ~ D in Fig, 20A, respectively;Fig. 2.1 A is a simplified flowchart illustrating a preferred method of calculating misregistration between layers Oft which the multi-layered moire target ofFigs. 19A - 19B or of Figs. 20A - 20D is formed;Figs. 21B and 21C are simplified pictorial illustrations of first and secon embodiments of a portion of the method of Fig. 21 A, respectively;Figs, 22 A, 22B, 22C, 22D and 22E are simplified respective top view, first sectional side view, second sectional side view, third sectional side view and fourth sectional side view illustrations of another embodiment of a multi-layered moire target of the present in vention. Figs. 22B, 22C, 22D and :2:2E being taken along lines B - B, C - C, D - D and E - B in Fig. 22A, respectively;Figs.23 A, 23B, 23C, 23D and 23E are simpli fied respective top view, first sectional side view, secon sectional side view, third sectional side view and fourth sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention, Figs. 23B, 23C, 23D and 23 E being taken along lines B - B,€ - C. D - D and B - E in Fig. 23A, respectively;Figs, 24A and 24B are together a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Figs. 22A - 22E or of Figs. 23 A - 23E is formed;Figs. 24C and 24D are simplified pictorial illustrations of first and second embodiments of a portion of tile method of Figs 24A & 24B, respectively ;Figs. 25 A, 25B»25C, 25D and 25E are simplified respective top view, firstsectional side view, second sectional side view, third sectional side view an fourth sectional side view illustrations of ano t her embodiment of a multi -layered moire target of the present invention. Figs 25 B, 25C, 25D and 25E being taken along lines B - B, C - C D -D and E - E in Fig. 2SA, respectively;Figs. 26A, 268, 26C, 26D and 26E me simplified respective top view first sectional side view, second sectional side view, third sectional side view and fourth sectional side view ill ustrations of another embodiment of a multi -layered moire target of the present in vention. Figs. 26B, 26C, 26D and 26E being taken along lines B - B, C - C, D - D and E - E in Fig 26A, respectively;Figs. 27A and 27B are together a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Figs. 25A— 2SE or of Figs 26A - 26E is formed;Figs 27C and 27D are simplified pictorial illustrations of first and second embodiments of a portion of the method of Figs 27 A & 27B, respectively;Figs. 28A, 28B, 28C, 28D and 28E are simplified respective to view, first sectional side view, second sectional side view, third sectional side vie and fourth sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention. Figs. 28B, 28C, 28D and 28E being taken along lines B - B, C - C, D - D an E - E in Fig 28A, respectively;Figs. 29 A, 29B, 29C, 291)and 29E are simplified respective top view, first sectional side view, second sectional side view, third sectional side view and fourt sectional side view illustrations of another embodiment of a multi-layered moire target of the present invention. Figs. 29B, 29C, 29D and 29E being taken along lines B -- B, C - C, D - D and E - E in Fig 29A, respectively;!7Figs. 30A an 30B are together a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Figs. 28A - 28E or of Figs. 29A - 29E is .formed;Figs. 300 and 3QD are simplified pictorial illustrations of first and second embodiments of a portion of the method of Figs 3 DA & 30B, respectively;Figs 31 A, 3 IB, 31C»ID and 3 IE are simplified respective top view, first sectional side view, second sectional side view, third sectional side view and fourth sectional side view illustrations of another embodiment of a multi -layered moire target of the present invention, Figs. 3 IB, 31C, 31D and IB being taken along lines B - B, C C, D -- D and E - E in Fig. 31 A, respectively;Figs. 32A, 32B, 32C, 32D and 32E are simplified respective top view, first sectional side view, second sectional side view, third sectional side view and fourth sectional side view illustrations of another embodi ment of a multi -layered moire target of the present invention. Figs 32B, 32C, 32D and 32E being taken along lines B - B, C - C. D - D and E - E in Fig. 32A, respectively;Figs 33 A and 33B are together a simplified flowchart illustrating a preferred method of calculating misregistration between layers on which the multi-layered moire target of Figs. 31A - 31E or of Ergs. 32A. - 32E is formed;Figs. 33C and 33D are simplified pictorial illustrations of first and second embodiments of a portion of the method of Figs. 33A & 33B, respectively;Fig. 34 is a simplified illustration of another embodiment of multilayered moire target of the present invention;Fig. 35 is a simplified illustration of another embodiment of a multilayered moire target of the present invention;Fig 36 is a simplified illustration of another embodiment of a multilayered moire target of the present invention;!8Fig. 3? is a simplified illustration of another embodiment of a multilayered moire target of the present invention;Fig. 38 is a simplified illustration of another embodiment of a multilayered moire target of the present: invention; and Fig. 39 is a simplified illustration of another embodiment of a multilayered moire target of the present invention.DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS(00373 K is appreciated that the targets and methods described hereinbelow with reference to Figs i A - 39 form pari of a manufacturing process for semiconductor devices, and the misregistration measured using the targets and methods described hereinbelow with reference to Figs. I A - 39 is used to adjust fabrication processes of the semicondi!cior devices to more closely align various layers of the semiconductor devices being fabricated.

[0038] It is appreciated that the targets described hereinbelow include at least one group of periodic structure stacks, wherein each stack includes one or more periodic structures each periodic structure having a pitch. It is appreciated that in the embodiments described hereinbelow all of the periodic structures within a single stack have different pitches. [00391 Reference is now made to Fig. 1 , which is a simplified illustration of a first embodiment of a multi-layered moire target 100 of the present invention. Fig. I includes illustrations in three different dimensions, indicated by x-, y- and x-axes, the three dimensions being referred to hereinafter as an x-y plane, an x·· / plane and a y-z plane, respectively. It is noted that Fig. I generally illustrates the x-y plane, while enlargements A, B and C of Fig. 1 illustrate planes parallel to the x- z plane.

[0040] Target 100 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 102, a second layer 104 and a third layer 106. It is appreciated that each of first layer 102, second layer 104 andnthird layer 106 defines a generally planar surface parallel to the x-y plane. First, second and third layers 102, 104 and 106 may be adjacent layers but need not he. Preferably, any material between first, second and third layers 102, .104 and 106 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Fig, 1, first layer 102 lies below second and third layers 104 and 106, and third layer 106 lies above first and second layers .102 and 104. It is appreciated, however, that layers 102, 104 and 106 may be arranged in any suitable order along the z-axis with respect to one another[00411 It is appreciated that Fig. 1 illustrates one possible layout of target 100, and that in other embodiments of the present invention, target 100 may include additional structures. For example, as described hereinbelow with reference to Figs. :2A - 2D & 34 - 39, a suitable target may include multiple instances of the structures shown in Fig. 1 , and those multiple instances may be arranged in various ways.

[0042] Preferably, target ίOO includes a first stack 1:22 of periodic structures, a secon stack 124 of periodic structures and a third stac k 126 oi'periodic structures. Each of first stack 122, second stack 124 and third stack 126 includes one or more periodic structures, each periodic structure aving a pitch. Preferably, none of first stack 122, second stack 124 and third: stack 126 overlap with one another.

[0043] It is appreciated that although in Fig. 1, each of the periodic structures of first stack 122, second stack 124 and third stack 126 are shown as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic struc tures of first stack 122, second stack 124 and third stack 126 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 122, second stack124 and third slack 126 may be formed of sub-structures. The pitches of each of the periodic structures of first slack 12:2, second stac 124 and third stac 126 are preferably between 10 nm - 3000 nm, and more preferably between 200 nm - 800 urn.10044 ] A first x-z plane 131 intersects first stack 122. A plurality of first axes 132 lie within first x-x plane 131 and are parallel to the x-axis. A second x-z plane 133 intersects second stack i 24. A plurality of second axes 134 lie within second x-x plane 133 and are parallel to the x-axis. A third x-z plane 135 intersects third stack 126, A plurality of third axes 136 lie within third x-z plane 135 and are parallel to the x-axis.11)045 As seen particularly in enlargement A, first stack 122 includes a first stack first periodic structure (S1P1) 142 formed together wi fh first layer 102 and having an S1FI pitch, designated A, along one of first stack axes 132. First stack 122 farther includes a first stack second periodic structure (S 1P2) 144 formed together with second layer 104 and having an S1P2 pitch, designated B, along another of first stack axes 332.

[0046] It is appreciated that S1P1 142 and S 1P2 144 at least partially overlie one another, and thus a first stack moire pattern 1 0 is visible upon imaging first stack 122. As is known in the art, first stack moire pattern 150 is characterized by a pitch Ci, which is a function of pitches A and B, as shown in equation i :AXBC:i!A-Bj (Eq. 1)Preferably, first stack 122 does not include periodic structures formed together with third layer 106 which affect moire pattern 150. However, first stack 122 may include periodic structures formed together with third layer 106 which do not affect moire pattern 150, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pat tern 150.10047] As: seen particularly in enlargement B, second stack 124 includes a second stack first periodic structure (S2P I) 152 formed together with second layer 104 and having an S2PI pitch, designated dB, along one of second stack axes 134. Preferably, S2P1 pitch dB is relate to S1 P2 pilch B by a second stack multiplicative factor, designated d. Second stack multiplicative factor d may be any positive number. Second stack 124 further includes a second stack second2!periodic structure (S2F2) 154 formed together with third layer 106 and having an S2P2 pitch, designated dA along another of second slack axes 134 Preferably, S2P2 pilch dA is related to SJ.P1 pilc A by second slack multiplicative factor d. It is appreciated that second stack multiplicative factor d relating S2P2 pitch dA to S IP 1 pilch A has the same value as second stack multiplicative factor d relatingS2P1 pitch dB to S1P2 pitch B. In an embodiment of the present invention, the value of d is 1 and thus S2P1 pitch dB is identical to S P2 pilch B and S2P2 pitch dA is identical to SI Pi pitch A.[00481 It is appreciated that S2P1 152 and S2P2 154 at least partially overlie one another, and thus a secon stack moire pattern 160 is visible upon imaging second stack 124. As is known in the art, second stack moire pattern 1.60 is characterize by a pilch Cz, which is a function of second stack multiplicative factor d, pitch A and pitch B, as shown in equation 2;Preferably, second stack 124 does not include periodic structures formed together with first layer 102 which affect moire pattern 160. However, second stack 124 may include periodic structures formed together with first layer 102 which do not affect moire pattern 160, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that doe not affect moire pal tern 160.

[0049] As seen particularly in enlargement C, third stack 126 includes a. third stack first periodic structure (S3P1) 162 formed together with first layer 102 and having an S3P1 pitch, designated eA, along one of third slack axes 136. Preferably, S3P1 pitch eA is related to SIPI pitch A by a third stack multiplicative factor, designated e. Third stac multiplicative factor e may be any positive number. Third stack 126 further includes a third stack second periodic structure (S3P2) 164 formed together with third layer 106 and having an S3P2 pitch, designated eB, along another of third stack axes 136 Preferably, S3P2 pitch eB is related to S1P2 pitch B by third stack multiplicative factor e it is appreciated that third stack multiplicative factor e relating S3P2 pitch eB to S 1 P2 pitch B has thesame value as third stack multiplicative factor e relating S3P1 pitch eA to SI Pi pitch A. In art embodiment of the present invention, the value of e is I and thus S3P1. pitch eA is identical to SI PI pitch A and S3P2 pitch eB is identical to S I.P2 pitch B.

[0050] It is appreciated that S3 PI i62 and S3P2 164 at least partially overlie one another, and thus a third stack moire pattern 170 is visible upon imaging third stack 126. As is known in the art, third stack moire pattern 170 is characterized by a pitch Cs, which is a function of third stack multiplicative factor e, pitch A an pitch B, as shown in equation 3: ¾ =*(!¾)Preferably, third stack 126 does not include periodic structures formed together with second layer 104 which affect moire pattern 170. However, third stack 126 may include periodic structures formed together with second layer 104 which do not affect moire pattern 170, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 170.[00511 Misregistration between any two of layers 102, 104 and 106 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology too! is an Archer™ 700, commercially available from LA Corporation, of Milpitas, CA, USA. Pitches A, B, dA, dB, eA and eB need not be optically resolvable by the misregistration metrology tool used to generate an image of target 100. However, i is preferable that each of pitches Ci, C¾ and C¾ is optically resolvable by the misregistration metrology tool used to generate an image of target 100

[0052] Reference is now made to Figs 2A ··· 2D, which are simplified illustrations of another embodiment of a multi-layered moire target 200 of the present invention. Figs. 2.4 - 2D include illustrations in three different dimensions, indicated by x y- and z-axes, the three dimensions being referred to hereinafteras an x-y plane, a» x-x plane and a y-x plane, respectively. It is noted that Fig. 2A generally illustrates tire x-y plane, while Figs. 2BS2C and 2D illustrate planes parallel to the x~z plane,

[0053] It is noted that target 200 is one examp le of an alternative layout of target 5 100, described hereinabove with reference to Fig, 1, and that additional layouts are described hereinbelow with reference to Figs. 34 - 39. Target 200 is preferabl formed on a semiconductor device wafer on which are preferably formed at least a first layer 202, a second layer 204 and a third layer 206, It is appreciated that each of first layer 202, second layer 204 and third layer 206 defines a generally 10 planar surfitpe parallel to the x-y plane. First, secondand third layers 202, 204 and206 may be adj cent layers but need not be. Preferably, any material between .first, second and third layers 202, 204 and 206 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs, 2A ~ 2D, first layer 202 lies below second and third layers 204 and 206, and third layer 206 lies is above first and second layers 202 and 204 It is appreciated, however, that layers202, 204 and 206 may be arranged in any suitable order along the x-axis with respect to one another,[0054} As seen particularly in Fig. 2A, target 200 includes four target quadrants 212, 214, 216 and 218. in the embodiment show in Fig. 2A, the rotational 20 orientation in the x-y plane of each of target quadrants 212, 214, 216 and 218preferably differs from the rotational orientation in the x- plane of each of the other target quadrants 212, 214, 216 and 218 by an integer multiple of 9(61 Additionally, target 200 preferably is characterized by rotational symmetry in either the x-ditectioo or the y-direciiors or both. In a preferred embodiment of the 25 present invention, target 200 is designed such that when in a state of registration,the entirety of target 200 is characterized by a single point of symmetry in the x- direction and a single point of symmetry in the y-direction. However, even in such an embodiment, when in ¾state of misregistration, various elements of target 200 will be characterized by unique points of symmetry.BO

[0055] Each of target quadrants 212, 214, 216 and 218 includes a first stack 22of periodic structures, a second stack 224 of periodic structures and a third stack226 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 222, second stack 224 and third stack 226 overlap with one another. In Figs. 2 A ~ 2D, first stack 222 is illustrated as lying closer to the center of target 200 than second stack 224 and third stack 226, and third stack 226 is illustrated as lying closer to the edge of target 200 than first stack 222 and second stack 224. However, first stack 222, second stack 224 and third stack 226 may be arranged in any suitable arrangement relative to the x-y plane with respect to one another. [0056 I It is appreciated that although in the embodiment illustrated i Figs. 2A -2D, each of the periodic structures of first stack 222, second stack 224 and third stack 226 are Illustrated as being formed of a plurality of lines and spaces, in other embodiments of die in vention, the periodic structures of first stack 222, second stack 224 and third stack 226 may be formed of any suitable periodic feat ures. It is further appreciated that the periodic features forming the periodic structures include in first stack 222, second stack 224 and third stack 226 may be formed of sub-structures. The pi tches of each of the periodic structures of first stack 222, second stack 224 and third stack 226 are preferably between 10 nm - 3000 m, and more preferably between 200 am 800 ran.

[0057] As seen in Fig. 2A, }¾ each of quadrants 212, 214, 216 and 218, a first plane 231, intersecting first stack 222 and including a plurality of first axes 232 lying therein, a second plane 233, intersecting second stack 224 and including a plurality of second axes 234 lying therein, and a third plane 235, Intersecting th ird stack 226 and including a plurality of third axes 236 lying therein, are defined. Each of first plane 231 , second plane 233 and third plane 235 are either an x-x plane or a y-z plane, and first axes 232, second axes 234 and third axes 236 are parallel to the respective x-axls or y-axis, depending on the orientation of first stack 222, secon stack 224 and third stack 226 within each of quadrants 212 , 214, 216 and 218. It is appreciated that in each of quadrants 212, 214, 216 and 218, first plane 231 , second plane 233 and third plane 235 are ail parallel to one another.

[0058] As see» particularly iu Fig. 2B, first stack 222 includes a first stack first periodic structure (SI PI) 242 formed together with first layer 202 and having an SI PI. pitch, designated D, along one of first stack axes 232, First stack 222 further includes a first stack second periodic structure (SiP2) 244 formed together with second layer 204 and having an S1 P2 pitch, designated E, along another of first stack axes 232.

[0059] It is appreciated that S tPl 242 and S 1P2 244 at least partially overlie one another, and thus a first stack moire pattern 250 is visible upon imaging first stack 222, As is known in the art, first stack moire pattern 25 is characterized by a pitch FT, whic is a function of pitches 0 an E, as· shown In equation 4:Preferably, first stack 222 does not include periodic structures formed together with third layer 206 which affect moire pattern 250. However, first stack 222 may include periodic structures formed together with third layer 206 which do not affect moire pattern 250, such as periodic structures which are periodic in a plane parallel to the \--y plane along an axis that is perpendicular to first stack axes 232 or periodic structures having a pitc size that does not affect moire pattern 250.

[0060] As seen particularly in Fig. 2G, second stack 224 includes a second stack first periodic structure (S2P1) 252 formed together with second layer 204 and having an S2P1 pitch, designated IE, along one of second stack axes 234.Preferably, S2P1 pitch £E is related to S1P2 pitch E by a second stack multiplicative factor designated f. Second stack multiplicative factor f may be any positive number. Second stack 224 further includes a second stack second periodic structure (S2P2) 254 formed together wife third layer 206 and having an S2P2 pitch, designated ID. along another of second stack axes 234. Preferably,S2P pitch fi> is related to SIP! pitch D by second stack multiplicative factor f It is appreciated that second stack: multiplicative factor f relating S2P2 pitch £D to S lPl pitch D has fee same value as second stack multiplicative factor f relating S2P1 pitch IB to S1P2, pitch E. In an embodiment of the present invention, feevalue of f is 1 and thus S2Pi pitch IE is identical to S1P2 pitch E and S2P2 pitch fD is identical to S I PI pitch D.[0061 } 11 is appreciated that 52P1 252 and S2P2 254 at least partially overlie One another, and thus a second stack moire pattern 260 is visible upon imaging secon stack 224. As is known in the art, second, stack moire pattern 260 is characterized by a pitch Fa, which is a function of second stack multiplicative factor fspitch D and pitch B, as shown in equation 5:(Eq. 5)Preferably.,second stack 224 does not include periodic structures formed together with first layer 204 which affect moire pattern 260 However»second stack 224 may include periodic structures forme togethe with first layer 204 which do not affect moire pattern 260 such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to second stack axes 234 or periodic structures having a pitch size that does not affect moire pattern 260.[006 } As seen particularly i Fig 2D, third stack 226 includes a third stack first periodic structure (S3 P 1 ) 262 formed together with first layer 202 and having an S3? 1 pitch, designated gD, along one of third stack axes 236. Preferably, 53PI pitch gD is related to 51 P i pitc D by a third stack multiplicative factor, designated g. Third stack multiplicative factor g may be any positive number.Third stack 226 further includes a third stack second periodic structure (S3P2) 264 formed together with third layer 206 and having an S3P2 pitch, designated gE, along another of third stack axes 236. Preferably, S3P2 pitch gE is related to S1P2 pitch E by third stack multiplicative factor g. It is appreciated that third stack multiplicative factor g relating S3P2 pitch gE to S IP2 pitch & has the same value as third stack multiplicative factor g relatin 53P1 pitch gD to Si Pi pitch D. In an embodiment of the present invention, the value of g is 1 and thus S3P1 pitch gD is identical to S IP! pilch D and S3P2 pitch gE is identical to S1P2 pitch E.10063 ) It is appreciated that S3P1 262 and S3P2 264 at least partially overlie one another, and thus a third stack moire pattern 270 is visible upon imaging third stack 226 As is known in the art, third stack moire pattern 270 is characterized by a pitch Fs, which is a function of third stack multiplicative factor g, pitch D and pitch E, as shown in equation 6:Preferably, third stack 226 does not include periodic structures formed together with second layer 204 which affect moire pattern 270. However, third stack 226 may include periodic structures formed togetherwith second layer 204 which do not affect moire pattern 270, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to third stack axes 236 or periodic structures having a pitch size that does not affect moire pattern 270100641 Misregistration between any two of layers 202, 204 and 206 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. A example of a suitable imaging misregistration metrology tool is an: Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA Pitches D, E, fD, IE, gD and gE need not be optically resolvable by the misregistration metrology tool used to generate an image of target 200 However, it is preferable that each of pitchesFi, F and Fj is optically resolvable by the isregistration metrology tool used to generate an i age of target 200.[00651 Reference is now made to Fig 3A, winch is a simplified flowchart illustrating a preferred method of calculating misregistration., using a multi- layered moire target 300, such as a target 100 (Fig 1) or target 200 (Figs. 2 A -2D), in a direction parallel to either the x or the y direction between a first, a second and a third layer 302, 304 and 306, such a layers 102, 104 and 106 (Fig. 1 ) or 202, 204 and 206 (Figs. 2 A - 2D) of a multilayered semiconductor device wafer formed with target 300. Reference is further made to Figs 3B & 3C, whichare simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig. 3 A, respects vely.[0066) While it is appreciated that when utilizing target 200 (Figs. 2 A - 2D) the method described with reference toFigs. 3A - 3C may be performed only once to calculate misregistration in either the x or the y direction, typically, the method described in Figs. 3A - 3C will be performed twice, to calculate misregistration in each of the x and y directions. It is also appreciated that when utilizing target 100 (Fig I) misregistration may be calculated only in the one direction to which first, second and third stack axes 132, 134 and 136 are parallel.[006? } As seen at a first step 307, a direction in which to measure misregistration is selected. When using target 100 in the method of Figs. 3 A & 3B, the direction in which to measure misregistration is automatically selected to he the direction to which first, second and third stack axes 132, 134 and 136 are parallel. When using target 200 iu the method of Figs, 3 A & 3B, the structures of quadrants 214 and 218 are utilized to meas re misregistration in a direction parallel to the x~axis and. the structures of quadrants 212 an 216 to measure misregistration in a direction parallel to ihe y-axis.[0068 ) Preferably, ata next step 309, an image of target 300 is generated using an imaging misregistration: metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a. suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. If is noted that pitches A, B, clA, dB, eA, eB, D, E, ff>, ffi, gD and gE need not be optically resolvable by the misregistration metrology tool used to generate the image of target 300. However, i t is preferable that each of pitches Q , C3, C¾F; , F2 and F.¾is optically resolvable by the misregistration metrology tool used to generate the image of target 300.[0069) In a next step 31 1 , and as seen in Figs. 3B & 3C, first, second and third regions of interest 312, 314 and 316 are selected for each of respective first, second and third stacks 322, 324 and 326, such as first, second and third stacks 122, 124 and 126 (Fig. 1) or first, second and third stacks 222, 24 and 226 (Figs.2A - 2D), in (he quadrants selected in step 307. It is appreciated, as seen in the illustrated embodiments of Figs. 3B & 3€, that whil first, second and third regions of interest 312, 314 and 316 preferably lie entirely within each of respective first, second and thir stacks 322, 324 and 326, as illustrated for first region of interest 312, which lies completely within first stack 322, first, second and third regions of interest 312, 314 and 316 may extend beyond respective first, second and third stacks 322, 324 and 326, as illustrated for regions of interest 314 and 316, which extend beyond respective second and third stacks 324 and 326. It is farther appreciated that regions of interest 312, 314 and 316 shown in Fig. 3B & 3C are representative regions of interest, and that other suitable regions of interest may be chosen at step 11.[0070 S In a next step 331 , and as seen in Figs. 3B & 3C, a location of a point of symmetry 332 between all instances of first region of interest 312 selected in step 31 1 is calculated. In a next step 333, and as seen in Figs. 38 & 3C, location of a point of symmetry 334 between all instances of second region of interest 314 selected in step 31 ! is calculated. In a next step 335, and as seen in Figs. 3B & 3C, a location of a point of symmetry 336 between all instances of third regio of interest 316 selected in step 31 1 is calculated.[007 ! I At a next step 337, a distance in the direction selected at step 30? is calculated between the location of point of symmetry 332 of first region or regions of interest 312 identified at step 331 and the location of point of symmetry 334 of second region or regions of interest 314 identified at step 333, The distance found at step 337 is divided by a gain Gj, which for target 10(3 Is a function of pitch A and pitch B, as shown in equation ?a; «» - (s¾) <&>·¾>and for target 200 is a function of pitch D and pitch E, as shown in equation 7b:%and the result is reported as the misregistration between first and third layers 302 and 306 in tire direction selected at step 307. It is appreciated that in addition to the distance calculated at step 337, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch A and pitch B or pitch D and pitch E, as well as which of layers 302 and 306 is to be adjusted

[0072] At a next step 339, a distance in the direction selected at step 307 is calculated between the location of point of symmetry 332 of first region or regions of interest 312 identified at step 331 and: the location of point of symmetry 336 of third region or regions of interest 316 identified at step 335, The distance found at step 339 is divided by a gain G:>, which for target 100 is a function of pitch A and pitch B, as shown in equation 8a:and for target 200 is a function of pitch D and pitch E, as shows in equatio 8b: ¾ - (S¾ <¾' *»> and die result is reported as the misregistration between second and third layers 304 and 306 in the direction selected at step 307, It is appreciated that in addition to the distance calculated at step 339, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch A and pitch B or pitch D and pitch E, as well as which of layers 304 and 306 is to be adjusted.[0O731 At a neat step 341, a difference is calculated between the misregistration value reported at step 337 and the misregistration value reported at step 339. The difference calculated at step 341 is reported as the misregistration between first and second layers 302 and 304 in the direction selected at step 307. It is appreciated tha in addition to the distance calculated at step 341 , the method further calculates an adjustment direction, such as right, left, up or down. TheTSadjustment direction is a function of the relative values of pi tch A and pi tch B or pitch D and pitch £, as well as hich of layers 302 and 304 is to he adjusted.[0074} Reference is now made to Fig. 4, which is a simplified illustration of another embodiment of a multi -layered moire target 400 of the present in vention . Fig 4 includes illustrations in three different dimensions, indicated by x-, y- and z-axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and a y-z plane, respectively. It is note that Fig. 4 generally illustrates the x-y plane, while enlargements A, B and€ of Fig 4 illustrate planes parallel to the x-z. plane. [0075! Target 400 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 402, a second layer 404 and a third layer 406. ft is appreciated that each of first layer 402, second layer 404 and third layer 406 defines a generall planar surface parallel to the x-y plane. First, second arid third layers 402, 404 and 406 may he adjacent layers hut need not be Preferably, any material between first, second and third layers 402, 404 and 406 is at least partially transparent to electromagnetic radiation in the embodiment illustrated in Fig 4, first layer 402 lies below second and third layers 404 and 406, and third layer 406 lies above first and second layers 402 and 404. it is appreciated, however, that layers 402, 404 and 406 may be arranged in any suitable order along the z-ax!s with respect to one another.

[0076] It is appreciated that Fig. 4 illustrates one possible layout of target 400, and that in other embodiments of the present invention, target 400 may include additional structures. For example, as described here in be low with reference to Figs 5A 5D & 34 ~ 39, a suitable target may include multiple instances of the structures shown in Fig. 4, and those multiple instance may be arranged in various ways.

[0077] Preferably, target 400 includes 3 first stack 4:22 of periodic structures, a second stack 424 of periodic structures and a third stack 426 of periodic structures. Each of first stack 422, second stack 424 and third stack 426 includes one or moreperiodic structures, each periodic structure having a pitch. Preferably, none of first stack 422, second stack 424 and third stack 426 overlap with one another,[0078} It is appreciated that although irt Fig. 4, each of the periodic structures of first stack 422, second stack 424 and third stack 426 are shown as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic structures of firs t stack 422, second stack 424 and third stack 426 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 422, second stack 42 and third stack 426 may be formed of sub-structures . The pitches of each of the periodic structures of first stack 422, second stack 424 and third stack 426 are preferably between 10 ran - 3000 ran, and more preferably between 200 ran ~ 800 nm

[0079] A first x-z plane 431 intersects first stack 422. A plurality of first axes 432 lie within first x-z plane 431 and are parallel to tile x-axis, A second x-z plane 433 intersects second stack 424. A plurality of second axes 434 lie within second x-z plane 433 an are parallel to tire x-axis. A third x-z plane 435 intersects third stack 426. A plurality of third axes 436 lie within third x-z plane 435 and are: parallel to the x-axis.

[0080] As seen particularly in enlargement A, first stack 422 includes a firs stack first periodic structure (S 1 F 1 } 442 formed together wit first layer 402 and having an SI PI pitch, designated H, along one of first stack axes 432. First stack 422 further includes a first stack second periodic structure (S 1 P2) 444 formed together with second layer 404 and having an S1P2 pitch, designated I, along another of first stack axes 432, [ 00811 It is appreciated that S 1 P 1 442 an S 1 P2 444 at least partially overlie one another, and thus a first stack moire pattern 450 is visible upon imaging first stack 422, As is known i the art. first stack moire pattern 450 is characterized by a pitch I], which is a function of pitches H and I, as shown in equatio 9:. Hxi~ - (Eq. 9)5fH-pPreferably, first stack 422 does not include periodic structures framed together with third layer 406 which affect moire pattern 450. However, first stack 422 may include periodic structures formed together with third layer 406 which do not affect moire pattern 450, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 450.

[0082] As seen in enlargement B, second stack 424 includes a second stack first periodic structure (S2P1) 452 formed together with first layer 402 and having an S2P1 pitch, designated K, along one of first stack axes 434. Second stack 424 further includes a second stack secon periodic structure (S2P2) 454 formed together with second layer 404 an having an S2P2 pitch, designated L, along another of second stack axes 434.

[0083] ft is appreciated that S2P1 452 and S2P2 454 at leas partially overlie one another, and thus a first stack moire pattern 460 is visible upon imaging second stack 424. Second stack moire pattern 460 is characterized by a pitch J¾, which is a function of p itches K and L, as shown in equation 10:Preferably, second stack 424 does not: include periodic structures formed together with third layer 406 which affect moire pattern 460. However, second stack 424 may include periodic structures formed together with third layer 406 which do not affect moire pattern 460, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pat tern 460.

[0084] As: seen particularly in enlargement C, third stack 426 includes a third stack first periodic structure (S3 P l ) 462 formed together with second layer 404 and having an S3P 1 pitch, designated hL, along one of third stack axes 436. Preferably, S3PI pitch hL is .related to S2P2 pitch L by a third stack multiplicative factor, designated h, Third stack multiplicative factor h may be any positive number. Third stack 426 further includes a third stack second periodic structure¾s(S3P2) 464 formed together with third layer 406 and having a» S3P2 pitch, designated hK, alon another of third stack axes 436. Preferably, S3P2 pitch hK is related to S2P1 pitch K by third stack multiplicative factor h. It is appreciated that third stack multiplicative factor h relating S3P2 pitch K to S2P1 pitch K has the same value as third stack multiplicati ve factor h relating S3P1 pitch hL to S2P2 pitch L. In an embodiment of the present in vention the value of h is 1 and thus S3P1 pitch hL is identical to S2P2 pitch L and S3 2 pitch hK is identical to S2P1 pitch K.[0085 { It is appreciated that S3P1 462 and S3P2 464 at least partially overlie one another, and thus a third stack moire pattern 470: Is visible upon imaging third stack 426. As is known in the art, third stack moire pattern 470 Is characterized by a pitch }3, whic is a function of third stack multiplicative factor h, pitch and pitch L, as shown in equation 1 1 :Preferably, third stack 426 does not include periodic structures formed together with frrst layer 40 which affect moire patern 470, However, third stack 426 may include periodic structures formed together with first layer 40 which do not affect moire pattern 470, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern.470.

[0086] Misregistration between any two of layers 402, 404 and 406 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture setings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available ftom KLA Corporation, of Milpitas, CA, USA. Pitches 1, M, K, L, hK and hL need not be optically resolvable by the misregistration metrology tool used to generate an image of target 400. However, it is preferable that each of pitches Jr, Js and L is optically resolvable by the misregistration metrology tool used to generate an image of target 400,1008? ] Reference is now made to Figs, 5A - 5D, which are simplified illustrations of another embodiment of a multi-layered moire target 500 of the present invention. Figs, 5A - SB include illustrations in three different dimensions, indicated by x- y- an z-axes, the three dimensions being referred to hereinafter as an x-y plane and an x-z plane respectively. It is noted that Fig. 5A generally illustrates the x-y plane, while Figs. 5B. 5C and 5D illustrate planes parallel to the x-z plane.10088] It is note that target 500 is one example of an alterna tive layout of target 400, described hereinabove with reference to Fig. 4, and that additional layouts are described hereinbelow with reference to Figs, 34 - 39. Target 500 is preferably formed on semiconductor device wafer on which are preferably formed at least a first layer 50:2, a second layer 504 and a third layer 506. It is appreciated that each of first layer 502, second layer 504 and third layer 506 defines a generally planar surface parallel to the x-y plane. First, second and third layers 502. 504 and 506 may be adj aeen t layers but. need not be. Preferably, any materia! between first, second and third Sayers 502, 504 and 506 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 5A - 5D, first layer 502 lies below second and third layers 504 and 506, and third layer 506 lies above first and second Sayers 502 and 504, It is appreciated, however, that layers 502, 504 and 506 may be arranged in any suitable order along the z-axis with respect to one another.10089] As seen particularly in Fig. 5A, target 500 includes four target quadrants512, 514, 516 and 518. In the embodiment show n in Fig. A. the rotational orientation in the x-y plane of each of target quadrants 512, 514, 516 and 518 preferably differs from the rotational orientation in the x-y plane of each of the other target quadrants 512, 514, 516 and 518 by an integer multiple of 90°. Additionally, target 500 preferably is characterized by rotational symmetr in either the ^-direction or the y-direction or both. In a preferred embodiment of the present invention, target 500 Is designed such that when in a state of registration, the entirety of target 500 is characterized by a s ingle point of symmetry in the x- direction and a single point of symmetry in the y-direction. However, even in such¾3aa embodiment, when in a state of misregistration, various elements of target 500 will be characterized by unique points of symmetry.[0090} Each of target quadrants 512, 514, 516 and 518 includes a first; stack 522 of periodic Structures, a second stack 524 of periodic structures and a third stack 526 of periodic structures. Each of first stack 522, second stack 524 and third stack 526 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 522, second stack 524 and third stack 526 overlap with one another. In Figs, 5A - 5D, first stack 522 is illustrated as lying closer to the center of target 500 than second shack 524 an third stack 526, and third stack 526 is illustrated as lying closer to the edge of target 500 than first stack 522 and second stack 524. However, first stack 522, second stack 524 an third stack 526 may in fact be arranged in any suitable arrangement relative to the x-y plane with respect to one another,[00911 it is appreciated that although in the embodiment illustrated in Figs, 5A - 5D, each of the periodic structures of first stack 522, second stack 524 and third stack 526 are illustrated as being formed of a plurality of lines an spaces, in other embodiments of the Invention, the periodic structures of firs stack 522, second stack 524 and third stack 526 ma be formed of any sui table periodic features, it is further appreciated that the periodic features forming the periodic structures included in first stack 522, second stack 524 and third stack 5:26 may be formed of sub-structures. The pitches of each of the periodic structures of first stack 522, second stack 524 and third stack 526 are preferably between 10 urn - 3000 run, and more preferably between 200 urn - 8(30 am.

[0092] As seen in Fig, 5.4, in each of quadrants 512, 514, 516 and 518, a first plane 531 , intersecting first stack 522 and including a plurality of first axes 53:2 lying therein, a second plane 533, intersecting second stack 524 and including a plurality of second axes 534 lying therein, and a third plane 535, intersecting third stack 526 and including a plurality'of third axes 536 lying therein, are defined. Each of first plane 531 , second plane 533 and third plane 535 are either an x~z plane or a y-z plane, and first axes 532, second axes 534 and third es 536 are parallel to the respective x-axis or y-axis, depending on the orientation of first47stack 522, second stack 524 and third stack 526 with each of quadrants 512, 514, 51 and 518. it is appreciated that in each of quadrants 512, 514, 51 and 518, first plane 531 , second plane 533 and third plane 535 are all parallel to one another.

[0093] As sees particularly in Fig. 5B, first stack 522 includes 8 first stack first periodic structure (SIPI) 542 formed together with first layer 502 and having an S IP ! pitch, designated M, along one of first stack axes 532. First stack 522 further includes a first stack second periodic structure (S1 P2) 544 formed together with second layer 504 and having an S1P2 pitch, designated N, along another of first stack axes 532.[0094 } It is appreciated that SI PI 542 and SI P2 544 at least partially overlie one another, and thus a first stack moire patern 550 is visible upon imaging first stack 522. As is known in the art, first stack moire pattern 550 is characterized by a pitch Oi , which is a function of pitches M and N, as shown in equation 12;MxOr (Eq, 12)Preferably, first stack 522 does not include periodic structures formed together with third layer 50 which affect moire pattern 550. However, first stack 522 may include periodic structures formed together with third layer 506 which do not affect moire pattern 550, such as periodic structures which are periodic in a plane parallel to the x~y plane along an axis that is perpendicular to first stack axes 532 or periodic structures having a pitch size that does not affect moire pattern 550,[00951 As seen particularly in Fig. 5C, second stack 524 includes a second stack first periodic structure (S2P I ) 552 formed together with first layer 502 and having an SIP l pitch, designated P along one of second stack axes 534. Secon stack 524 further includes a second stack second periodic structure (S2P2) 554 formed together with second layer 504 and having an S.1P2 pitch, designated , along another of second stack axes 534.10096 ) It is appreciated that S2P1 552 and S2P2 554 at least partially overlie one another, and thus a second stack moire pattern 560 is visible upon imaging second stack 524. As is known in the art second stack moire pattern 560 is characterized by a pitch <½, which is a function of pitches P and Q, as shown in equation 13:Preferably, second slack 524 does not include periodic structures forme together with third layer 506 which affect moire pattern 560 However, second stack 524 may include periodic structures formed together with third layer 506 which do not affect moire pattern 560, such as periodic structures which are periodic in a plane parallel to the x~y plane along an axis that is perpendicular to second stack axes534 or periodic structures having a pitch size that does not affect oird pattern 560.

[0097] As seen particularly in Fig 5D, tlrird stack 526 includes a third stack first periodic structure (S3P1) 562 formed together with second layer 504 and having an S3P 3 pitch, designated kQ, along one of third stack axes 536 Preferably, S3P 1 pitch kQ is related to S2F2 pitc Q by a thir stack multiplicative factor, designated k. Third stack multiplicative factor k may be any positive number. Third stack 526 further includes a third stack second periodic structure (S3P2) 564 formed together with third layer 506 and having an S3 2 pitch, designated kP, along another of third stack axes 536. Preferably, S3P2 pitch kP is related to S2PI pitch P by third stack multiplicative factor k. It is appreciated that third stack multiplicative factor k relating S3P2 pitch kP to S2P1 pitch P has the: same value as third stack multiplicative factor k relating S3P1 pitch kQ to S2P2 pitch Q In an embodiment of the present invention, the value o k is I and thus S3? I pitch kQ is identical to S2P2 pitch Q and S3P2 pitch kP is identical to S2P1 pitch P.[0098j li is appreciated that S3 1 562 and S3P2 564 at least partially overlie one another, and thus a third stack moire pattern 570 is visible upon imaging third stack 526. As is known in the art, third stack moire pattern 570 is characterized by a pitch CP, which is a function of third stack ul.tiplieaiive factor k, pitch P and pitch Q as shown in equation 14:¾ =k(iF¾) (Eq. 14)Preferably, third stack 526 does not include periodic· structures formed together with first layer 502 which affect moire pattern 570. However, third stack 526 may include periodic structures formed together with first layer 502 which do not affect moire pattern 570, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to third stack axes 536 or periodic structures having a pilch size that does not affect moire pattern 570.

[0099] Misregistration between any two of layers S02, 504 and 506 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. Art example of a suitable imaging misregistration metrology too! is an Archer™ 700, commerciall available from KLA Corporation, of Milpitas, CA, USA. Pitches M, N, P, Q, kP and kQ need not be optically resolvable by the misregistration metrology too! used to generate an image of target 500. However, it is preferable that each of pitches Oi , Gj and (¾ is optically resolvable by the misregistration metrology tool use to generate an image of target 500.

[0100] Reference is now made to Fig. 6A, which is a simplified flowchart illustrating a preferred method of calculating misregistration, using a multilayered moire target 600, such as a target 400 (Fig. 4) or target 500 (Figs. 5 A - 5D), in a direction parallel to either the x or the y direction between a first, a second and a third layer 602, 604 and 606, such as layers 402, 404 and 406 (Fig. 4) or 502, 504 and 506 (Figs. SA - 5D) of a multilayered semiconductor device wafer formed with target 600, Reference is further made to Figs. 6B & 6C, whic are simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig. 6A, respectively.[0010 ! ] While it is appreciated that when utilizing target 500 (Figs. 5A - 5D) the method described with reference to Figs. 6 A - 6C may be performed only once to calculate misregistration in either the x or the y direction, typically, the method described in Figs. 6A - 6C will be performed twice, to calculate misregistration in each of the x and y directions. It is also appreciated that when utilizing target400 (Fig. 4) misregistration may be calculated only in the one direction to which first, second and third stack axes 432, 434 and 436 are parallel, i 00102 j As seen at a first step 607, a direction in which to measure misregistration is selected. When using target 400 in the method of Figs. 6.4 & 6B the direction in which to measure misregistration is automatically selected to be the direction to which first, second and third stack axes 432, 432 and 436 are parallel. When using target 500 in the method of Figs. 6 A & 6B„ the structures of quadrants 514 and.518 are utilized to measure misregistration in a direction parallel to the x-axis, and the structures of quadrants 512 and 516 to measure misregistration in a direction parallel to the -axis.

[0103] Preferably, at a next step 609, an image of target 600 is generated using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. A» example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, US A. It is noted that pitches I, H, L, K, hK, hL, M, N, P, Q, kP, kQ need not be optically resolvable by the misregistration metrology tool used to generate the image of target 600. However, it is preferable that each of pitches Js, h, h, Ch, O? and Os is optically resolvable by the misregistration metrology tool used to generate the image of targe 6(10.[00.104] In a next step 61 1 , and as seen in Figs. 68 & 6C, first, second and third regions of interest 612, 614 and 616 are selected for each of respective first, second and third stacks 622, 624 and 626, such as first, second and third stacks 422, 424 and 426 (Fig. 4) or first, second and third stacks 522, 524 and 526 (Figs. 5A - 5D), in the quadrants selected in step 607, It is appreciated, as seen in the illustrate embodiments of Figs. 6B & 6€, that while first, second and third regions of interest 612, 614 and 61 preferably lie entirely within each of respective first, second and third stacks 622, 624 and 626, as illustrated for first region of interest 612, which lies completely within first stack 622, first, second and third regions of interest 612, 614 and 616 may extend beyond respective first, second and third stacks 622, 624 and 626, as illustrated for regions of interest 614 and 616, which extend beyond respective second and third stacks 624 and 626, itis further appreciated that regions of interest 12, 614 and 616 shewn in Fig. 6B & 6C are represen iative regions of interest, and that other suitable regions of interest may be chosen at ste 611 ,

[0105] I» a next step 631 , and as seen in Figs, 6B & 6C, a location of a point of symmetry 032 between alt instances of first region of interest 612 selected in step61 1 is calc ulated. In a next step 633, and as seen in Figs. 6B St 6€, a location of a point of symmetry 634 between all instances of second region of interest 614 selected in step 11 is calculated in a next step 635, and as seen in Figs, 6B & 6C a location of a point of symmetry 636 between all inst tces of third region of interest 616 selected in step 61 1 is calculated.J (Mil 06] At a next step 637, a distance in the direction selected at step 607 is calculated between the location of point of symmetry 632 of first region or regions of interest 612 identified at step 631 and the location of point of symmetry 634 of second region or regions of interest 614 identified at step 633, The distance found at step 637 is divided by a gain Ritwhich for target 400 is a function of pitchesH, 1, K and L, as shown in equation 15a:and for target 500 is a function of pitches M, N, F and Q, as shown in equation 1 5b:and the result i reported as the misregistration between first and second layers 602 an 604 in the direction selected at step 607. it is appreciated that in addition to the distance calculated at step 637, the method further calculates an adjustment direction, sneSi as right, left, up or down. The adjustmen direction is a function of the relative values o f pitches H an I and pitches K1 and L or pitches M and and pitches P an Q, as well as which of layers 602 and 604 is to be adjusted.

[0107] At a next step 639, a distance in the direction selected at step 607 is Calculated between the location of point of symmetry 634 of second region or regions of interest 614 identified at step 633 and the location of point of symmetry 636 of third region or regions of interest 61 identified at step 633. The distance found at step 639 is divided by a gain R , which for target 400 is a function of pitch K and pitch L, as shown in equation 16a:and for target: 500 is a function of pitch P and pi tch Q, as shown in equation 16b:and the result Is reported as the misregistration between first an third layers 602 and 606 in the direction selected at step 607 ft is appreciated that in addition to the distance calculated at step 639, the method further calculates an adjustment direction, such as right, left up or down. The adjustment direction is a function of the relative values of pitches H and 1 and pitches K and L or pitches M and N and pitches F and Q, as well as which of layers 602 and 606 is to be adjusted.

[0108] At a next step 641 , a difference is calculated between the misregistration value reported at ste 637 and the misregistration value reported at step 639. The difference calculated at step 641 is reported as the misregistration between first and thud layers 602 and 606 in the direction selected at step 607 It is appreciated that in addition to the distance calculated at step 641, the method further calculates an adjustment direction, such as right, left up or down. The adjustment direction is a function of the relative values of pitches H and 1 and pitches K and L or pitches M and N and pitches P and Qsas well as which of layers 602 and 606 is to he adjusted. [ 01)109] It is appreciated that relevant portions of the method described hereinabove with reference to Figs. 6A ~ 60 may be performed using only the first two of layers 602, 604 and 606 to be formed, prior to the formation of the third of those4?layers, As noted hereinabove, layers 602, 604 and 606 may be formed in any suitable order with respect to one another.[001 10 j Reference is now made to Fig. 7 which is a simplified illustration of another embodimen t of a mnit -layered moire target 700 of the present invention, Fig 7 includes illustrations in three different dimensions indicated by x-, y- and z-axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and a y-z plane, respectively. It is noted that Fig. 7 generally illustrates the x-y plane, while enlargements A, B and€ of Fig 7 illustrate planes parallel to the x-z. plane. [001 1 1] Target 700 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 702, a second layer 704 and a third layer 706. ft is appreciated that each of first layer 702, second layer 704 and third layer 706 defines a generally planar surface parallel to the x-y plane. First, second and third layers 702, 704 and 706 may be adjacent layers but need not be Preferably, any material between first, second and third layers 702, 704 and 706 is at least partially transparent to electromagnetic radiation in the embodiment illustrated in Fig 7, first layer 702 lies below second and third layers 704 and 706, and third layer 706 lies above first and second layers 702 and 704 it is appreciated, however, that layers 702, 704 and 706 may be arranged i any suitable order along the z-axls with respect to one another.

[0112] It is appreciated that Fig. 7 illustrates one possible layout of target 700, and that in other embodiments of the presen invention, target 700 may include additional structures. For example, as described hereinbelow with reference to Figs 8 A - 8D & 34 ~ 39, a suitable target may include multiple instances of the structures shown in Fig. 7, an those multiple instances may he arranged in various ways.

[0113] Preferably , target 700 includes a first stack 722 of periodic structures, a second stack 724 of periodic structures and a third stack 726 of periodic structures. Each of first stack 722, second stack 724 and third stack 726 includes one or moreperiodic structures, each periodic structure having a pitch. Preferably, none of first stack 722, second stack 724 and third stack 726 overla with one another. i 001 14 j It is appreciated that although in Fig, 7, each of the periodic structures of first stack 722, second stack 724 and third stack:726 are shown as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic structures of first stack 722, second stack 724 and thi rd stack 726 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 722, second stack 72 and third stack 726 may be formed of sub-structures. The pitches of each of the periodic structures of first stack 722, second stack 724 and third stack 726 are preferably between 10 ran - 3000 ran, and more preferably between 200 run - 800 nm[001 15] A first x-z plane 731 intersects first stack 722 A plurality of first axes 732 be within first x-z plane 731 and are parallel to tire x-axis. A second x-z plane 733 intersects second stack 724, A plurality of second axes 734 lie within second x-z plane 733 and are parallel to tire x-axis. A third x-z plane 735 intersects third stack 726. A plurality of third axes 736 lie within third x-z plane 735 and are: parallel to the x-axis.[001 161 As seen particularly in enlargement A, first stack 722 ine ludes first tack first periodic structure (S I P 1 } 742 formed together with first layer 702 and having an SI PI pitch, designated S, along one of first stack axes 732, Preferably, fixs stack 722 does not include periodic structures formed together with either of second layer 704 or third layer 706 which would., together with SI PI 742, produce a moird pattern upon imaging first stack 722. However, first stack 722 may include periodic Structures forme together with second layer 704 or third layer 706 which do not produce a moire pattern upon imaging first stack 722, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not produce a moire pattern upon imaging first stack 722.1001 17] As seen particularly in enlargement B, second stack 724 includes a second stack first periodic structure CS2F1 ) 752 loaned together with first layer 702 and ha ving an S2P.I pitch, designated T, along one of second stack axes 734. Secon stack 72 further includes a second stack second periodic structure (S2P2) 754 formed together with second layer 704 and having an S2P2 pitch, designated U, along another of second stack axes 734

[0118] It is appreciated that S2P1 752 and S2P2 754 at least partially overlie one another, and thus a second stack moire pattern 760 is visible upon i aging second stack 724, As is known in tire art, secon stack moire pattern 760 is characterized by a pilchwhich is a function of pitch T and pitch U, as shown in equation 17:Preferably, second stack 724 does not include periodic structures formed together with third layer 706 which affect moire pattern 760. However, second stack 724 may include periodic structures formed together with third layer 706 which do not affect moire pattern 760, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 760

[0119] As seen particularly in enlargement G, third stack 726 includes a third stack first periodic structure (S3PI ) 762 formed together with second layer 704 and having an S3Pl pitch, designated 1U, along one of third stack axes 736Preferably, S3P1 pitch 10 is related to S2P2 pitch U by a third stack multiplicative factor, designated 1. Third stack multiplicative factor 1 may be any positive number. Third stack 726 further includes a third stack second periodic structure (S3P2) 764 formed together with third layer 706 and having an S3P2 pitch, designated IT, along another of third stack ax es 736. Preferably, S3P2 pitch IT is related to SI Pi pitch T by third stack multiplicative factor I It is appreciated that third stac multiplicative factor 1 relating S3P2 pitch IT to S2PI pitc T has the same value as third stack multiplicative factor 1 relating S3P1 pitch 1U to S2P2 pitch U. In an embodimen t of the present invention, the value of 1 is I and thusS3P1 pitch 1U is identical to S2P2 pitch ϋ and S3P2 pitch IT is identical to S2PI pitc T. i00120 j It is appreciated that S3 PI 762 and S3P2 764 at least partially overlie one another, and thus a third stack moire pattern 770 is visible upon imaging third stack 726 As is known in the art, third stack moire pattern 770 is characterized by a pitch Vs, which is a function of third stack multiplicative factor i, pitch U and pitch T, as shown in equation 1 : v»~ ' (i¾) 0 1·18> referably, third stack 726 does not include periodic structures formed together with first layer 702 which affect moire pattern 770 However, third stack 726 may include periodic structures formed together with first layer 702 which do not affect moire pattern 770, suc as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures basing a pitch size that does not affect moire pattern 770. j 00121 ] Misregistration between any two of layers 702, 704 and 706 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology too! is an Archer*3700, commercially available fro KLA Corporation, of Milpitas, CA, USA. Pitches T, U, IU and IT need not be optically resolvable by the misregistration metrology tool used to generate an image of target. 700. However, it is preferable that each of pitches S, Vs and Vs is optically resolvable by the misregistration metrology tool used to generate an image of target 700,

[0122] Reference Is now made to Figs. 8A ~ 8D, which are simplified illustrations of another embodiment of a multi-layere moire target 800 of the present invention. Figs. SA - SB include illustrations i« three differen dimensions, indicated by x-, y- and z-axes, the three dimensions being referred to hereinafter as an x~y plane, an x~z plane and a y-z plans, respectively. It is noted that Fig. SAgenerally illustrates the x-y plane, while Figs. 8B, 8C and 8D illustrate plaa.es parallel to the x-x plane

[0123] It is noted that target 800 is one ex mine of an alternative layout of tty-get700, described hereinabove with reference to Fig. 7, and that additional layouts are described hereinbelow ith reference to Figs. 34 - 39. Target 800 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 802, a second layer 804 and a third layer 806. it is appreciated that each of first layer 802, second layer 804 and third layer 806 defines a generally planar surface parallel to the x-y plane. First, secon and third layers 802, 804 and 806 may be adjacent layers but need not be. Preferably, any material between first, second and third layers 802, 804 and 806 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs 8 A. - 8D, firs layer 802 lies below second and third layers 804 and 806, and third layer 806 lies above first and second layers 802 and 804. ft is appreciated, however, that layers 802, 804 and 806 may be arranged In any statable order along the z-axis with respect to one another.100124] As seen particularly in Fig. 8A, target 800 includes four target quadrants 812, 814, 816 and 818. In the embodiment shown in Fig. 8,4, the rotational orientation in the x-y plane of each of targe quadrants 812, 814, 816 and 818 preferably differs from the rotational orientation in the x-y plane of each of the other target quadrants 812, 814, 816 and 818 by an integer multiple of 90°. Additionally, target 800 preferably is characterized by rotational symmetr in either tlte x-direction or the y-direciion or both. In a pre ferred embodiment of the present invention, target 800 is designed such that wheat in a state of registration, the entirety of target 800 is characterized by a single point of symmetry in the x- direction and a single point of symmetry in the y-direction. However, even in such an embodiment, when in a state of misregistration, various elements of target 800 wilt be characterized by unique points of symmetry.[00125 | Each of target quadrants 812, 814, 816 and 818 includes a first stack 822 of periodic structures, a second stack 824 of periodic structures and a third stack826 of periodic structures. Each of first stack 822, secon stack 824 and third stack826 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 822, second stack 824 and third stack 826 overlap with one another. In Figs. 8 A ~ 8D, first stack 822 is illustrated as lying closer to the center of target 800 than second stack 824 and third stack 826, and third stack 826 is illustrated as lying closer to the edge of target 800 than first stack 822 and second stack 824. However, first stack 822, second stack 824 and third stack 826 may be arranged in any suitable arrangement relative to the x-y plane with respect to one another. 126} it is appreciated that although in the embodiment illustrated: in Figs, 8A - 8D, each of the periodic structures of first stack 822, second stack 824 and: third stack 826 are illustrated as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic structures of first stack 822, second stack 824 and third stack 826 may be formed of any suitable periodic features, it is further appreciated that the periodic features forming the periodic structures included in first stack $22, second stack 824 and third stack 826 ma be formed of sub-structures. The pitches of each of the periodic structures of first stack 822, second stack 824 and third stack 826 are preferably between 10 nm - 3000 nra, and more preferably between 200 nm - 800 nm. 127] As seen in Fig. 8 A, in each of quadrants 812, 814, 816 and 818, a first plane 831, intersecting first stack 822 and including a plurality of first axes 832 lying therein, a second plane 833, intersecting second stack 824 and including a plurality of second axes 834 lying therein, and a third plane 833, intersecting third stack 826: and including a plurality of third axes 836 lying therein, are defined. Each of first plane 83!, second plane 833 and third plane 835 are either anplane or a y- z plane, and first axes 832, second axes 834 and third axes 836 are parallel to the respective x~axis or y-axis, depending on the orientation of first stack 822, second stack 824 and third stack 826 within each of quadrants 812, 814, 816 and 818. It is appreciated that in each of quadrants 812, 814, 816 and 818, first plane 831, second plane 833 and third plane 835 are all parallel to one another.100128] As see» particularly iu Fig. 8B, first stack 822 includes a first stack first periodic structure (SI P! ) 842 formed together with first layer 802 and having an SIP! pitch, designated W, along one of first steck as.es 832 Preferably, first stack 822 does not include periodic structures formed together with either of second layer 804 or third layer 806 which would, together with SI Pi 842, produce a moire pattern upon imaging first slack 822. However, first stack 822 may include periodic structures formed together with second layer 804 or third layer 806 which do not produce a moire pattern upon imaging first stack 822, such as periodic structures which are periodic in a plane parallel to the x~y plane along an axis that is perpendicular to first stack axes 822 or periodic structures having a pitch size that does not produce a moire pattern upon imaging first stac 822.

[0129] As seen particularly in Fig. 8€, second stack 824 includes a second stack first periodic structure (S2P1 ) 852 formed together with first layer 802 and having an S2P1 pi tch, designated X, along one of second stac axes 834. Second stack 824 further includes a second stack second periodic structure (S2P2) 854 formed together with second layer 804 and havin an S2P2 pitch, designated Y, along another of second stack axes 834

[0130] It Is appreciated that S2P1 852 and S2P2 854 at least partially overlie one another, and thus a second stack moire pattern 860 is visible upon imaging second stack 824. As is known in the art, secon stack moire pattern 860 is characterized by a pitch Z , which is a function of pitch X and pitch Y, as shown in equation 19:(Eq. 19)Preferably, second stack 824 does not include periodic structures formed together with third layer 806 which affect moire pattern 860 However, second slack 824 may include periodic structures formed together with third layer 806 whic do not affect moire pattern 860, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to second stack axes 834 or periodic structures having a pitch size that does not affect moire partem 860.

[0131] As seen particularly in Fig. 8D, third stack 826 includes a third stack first periodic structure (S3P1) 862 Formed together with second layer 804 and having an SIP! pitch, designated Y along one of third stack axes 836. Preferably, S3P i pitch fflY is related to S2P2 pitch Y by a third stack multiplicative factor, designated m. Third stack multiplicative factor m may be any positive number.Third stack 826 further includes a third stack second periodic structure (S3P2) 864 formed together with third layer 806 an having an S3P2 pitch, designated mX, along another of third stack axes 836. Preferably, S3P2 pitch raX is related to S2P 1 pitch X by third stack multiplicative factor m. It is appreciated that third stack multiplicative factor m relating S3P2 pitch mX to S2 1 pitch X has the same value as third stack multiplicative factor m relating S3P1 pitch mY to S2P2 pitch Y. in an embodiment of the present invention, the value of m is 1 and thus S3P! pitch mY is identical to S2P2 pitch Y and S3P2 pitch mX is identical to S2P1 pitch X.

[0132] It is appreciated that S3 Pi 862 and S3F2 864 at least partially overlie one another, and thus a third stack moire pattern 870 is visible upon imaging third stack 826. As is known in the art, third stack moire pattern 870 is characterized by a pitch ¾, which is a function of third stack multiplicative factor m, pitch Y and pitch X, as shown in e uation 20;Preferably, third stack 826 does not include periodic structures formed together with first layer 802 which affect moit patern 870 However, third stack 826 may include periodic structures formed together with first l ayer 802 w hich do not affect moire pattern 870, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to third stack axes 836 or periodic structures having a pitch size that does not affect moire pattern 870. f 00133] Misregistration between any two of layers 802, 804 an 806 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commerc iallyavailable fro KXA Corporation, of Milpitas,€A, USA. Pitches X, Y, ¥ and mX need not be optically resolvable by the misregistration metrology tool used to generate an image of target 800. However, it is preferable that each of pitches W, ¾ and i is optically resolvable by the misregistration metrology tool used to generate an image of target 800.

[0134] Reference is now made to Fig, 9 A, which is a simplified flowchart illustrating a preferred method of calculating misregistration, using a multilayered moire target 900, such as a target 700 (Fig, 7) or target 800 (Figs. 8A - 8D), in a direction parallel to either the x or the y direction between a first, a second and a third layer 902, 904 and 906, such as layers 702, 704 and 706; (Fig.7) or 802, 804 and 806 (Figs. 8,4 ~ 8D) of a multilayered semiconductor device wafer formed wit target 900. Reference is further made to Figs. 9B & 9C, which are simplified pictorial illustrations of first aud second embodiments of a portion of the method of Fig. 9 A, respectively .

[0135] While it is appreciated that when utilizing target 800 (Figs. SA - 8D) the method described with reference to Figs. 9A - - 9C may be performed only once to calculate misregistration in either the x or the y direction, typically, the method described in Figs. 9 A ~ 9C will be per formed twice, to calculate misregistration in each of the x and y directions. It is also appreciated that when utilizing target 700 (Fig. 7) misregistration may be calculated only in the one direction to which first, second and third stack axes 732, 734 and 736 are parallel.

[0136] As seen at a first step 907, a direction in which to measure misregistration is selected. When using target 700 in the method of Figs. 9 A & 9B, the direction in which to measure misregistration is automatically selecte to be the direction to which first, second and third stack axes 732, 734 and 736 are parallel. When using target 800 in the method of Figs. 9.4 & 9B, the structures of quadran ts 814 and 81 are utilize to measure misregistration in a direction parallel to the x-axis, and the structures of quadrants 812 and 816 to measure misregistration in a direction parallel to the y-axis.100137] Preferably; at a «ext step 909, a» image of target 900 is generated using ao imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. It is noted that pitches T, U, iU, IT, X,Y, mY and X need not be optically resolvable by the misregistration metrology tool used to generate the image of target 900. However, it is preferable that each of pitches S, W, Vs, \ Zi and Z$ is optically resolvable by the misregistration metrology tool used to generate the image of target 900.

[0018] In a next step 91 L and as seen in Figs 9B & 9C, first second an third regions of interest 912, 914 and 916 are selected for each of respective first, second and third stacks 922, 924 and 926, such as first, second and third stacks 722, 724 and 726 (Fig. 7) or first, second and third stacks $22, 824 and 826 (Figs 8A - 8D), in the quadrants selected in. step 907 It is appreciated, as see in the illustrated embodiments of Figs 9B «& 9C, that while first, second an third regions of interest 912, 914 and 916 preferably lie entirely within each of respective first, second and third stacks 922, 924 and 926, as illustrated for first region of interest 912, which lies completely within first stack 922, first, second and third regions of interest 912, 914 and 916 may extend beyond respective first, second and third stacks 922, 924 and 926, as illustrated for regions of interest 914 and 1 , which extend beyond respective second and third stacks 924 and 926. It is further appreciate that regions of interest 912, 914 and 916 shown in Fig. 9B & 9C are representative regions of interest, an that other suitable regions of interest may be chosen at step 91 L

[0019] hi a next step 931 , and as seen in Figs. 9B & 9C, a location of a point of symmetry 932 between all instances of first region of interest 912 selected in step 91 ! Is calculated. In a next step 933, and as seen in Figs. 9B & 9C, a location of a point of symmetry 934 between all instances of second region of interest 914 selected in step 91 1 is calculated. In a next step 935, and as seen in Figs 9B & 9C, a location of a point of symmetry 936 between ail instances of third region of interest 916 selected in step 911 is calculated.5?

[0140] At a next step 937* a distance in the direction selected at step 907 is calculated between the location of point of symmetry 93 of first region or regions of interest 912 identified at step 931 and the location of point of symmetry 934 of second region or regions of interest 914 identified at step 933. The distance found at step 937 is divided by a gain tti, which for target 700 is a function of pitch T and pitch U, as shown in equation 2 la;and tor target 800 is a function of pitch X and pitch Y, as shown in equation 21 b:and the resnlt is repotted as the misregistration between first and second layers902 and 904 in the direction selected at step 907, It is appreciated that i addition to the distance calculated at step 937, the method further calculates an adjustment direction, such as right, left up or down. The adjustment direction is a function of the relative values of pitches T and U or pitches X an Y, as well as which of layers 902 and 904 is to he adjusted.

[0141] At a next step 939, a distance in the direction selected at step 907 is calculated between the location of point of symmetry 934 of second region or regions of interest 914 identified at step 933 and the location of point of symmetry 936 of third region or regions of interest 916 identified at step 935. The distance found at step 939 is divided by a gain «2, which for target 700 is a function of pitch T and pitch U, as shown in equation 22a:(Eq. 22a)and. for target 800 is a function of pitch X and pitch Y, as shown in equation 22b:and the result is reported as the misregistration between first and third layers 90:2 and 906 in tire direction selected: at step 907. It is appreciated that in addition to the distance calculated at step 939, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitches T and U or pitches X and Y, as well as which of layers 902 and 906 is to be adjusted.

[0142] At a next step 941, a difference is calculated between the misregistration value reported at step 937 and the misregistration value reported at step 939. The difference calculated at step 941 is reported as the misregistration between second and third layers 904 and 906 in the direction selected at step 907, it is appreciated that in addition to the distance calculated at step 941, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitches T and U or pitches X and Y, as well as which of layers 904 and 906 is to be adjusted.

[0143] It is appreciated that in an embo iment of the presen invention, relevan portions of the method described hereinabove with reference to Figs. 9A - 9C may be performed using onl tire: first two ©flayers 902, 904 and 906 to be formed, prior to the formation of the third of those layers. As noted hereinabove, layers 902, 904 and 906 may be formed in any suitable order with respect to one another.

[0144] Reference is now made to Fig. 10. which is a simplified illustration of another embodiment of a multi-layered moire target 1000 of the present invention. Fig. 10 includes illustrations in three different dimensions, indicated by x-, y- and z.-axes, the three dimensions being referred to hereinafter as an x-y plane, an x~z plane and. a y- plane, respectively. It is noted that Fig, 10 generally illustrates the x-y plane, while enlargements A, B and C of Fig, 10 illustrate planes parallel to the x~z plane

[0145] Target 1000 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 1002, a second layer 1004 and a third layer 1006. It is appreciated that each of first layer 1002, second layer 1004 and third layer 1006 defines a generally planar surface parallel to the x-y plane.First, second and third layers 1002, 1004 and i 000 may be adjacent layers but need not be. Preferably, any material between first, second and third layers 1002, 1004 and 1006 is at least partially transparent to electromagnetic radiation la the embodiment illustrated in Fig. 10, first layer 1002 lies below second and third layers 1004 and 1006, and third layer i 006 lies above first and second layers 1002 and 1004, It is appreciated, however, that layers 1002, 1004 and 1006 may be arranged in any suitable order along the ¾~axis with respect to one another.

[0146] Additionally, in an embodiment of the present invention, structures shown as being formed together with first and third layers 1002 and 1006 may be all he formed together wilh layer 1002. In such an embodiment, no portion of target 1000 is formed together with layer 1006. Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 12A - 12C.

[0147] It is appreciated that Fig. 1 il I ustrates one possible layout of target 1000, and that in other embodiments of the present invention, target 1000 ma include additional structures. For example, as described hereinbelow with reference to Figs, 1 i A ~ 1 ID & 34 ~ 39, a statable target may include multiple instances of the structures shown in Fig, It), and those multiple instances may be arranged in various ways.

[0148] Preferably, target 1000 includes a first stack i 022 of periodic structures, a second stack 1024 of periodic structures and a third stack 1026 of periodic structures. Each of first stack 1022, second stack 1024 and third stack 1026 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 1022, second stack 1024 and third stack 1026 overlap with one another.

[0149] It is appreciated that although in Fig, H), each of the periodic structures of first stack 1022, second stack 1024 and third stack 1026 are shown as being farmed of a plurality of lines and spaces, in other embodiment of the invention, the periodic structures of first stack 1022, second slack 1024 and third stack 1026 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming tire periodic structures included in first stack 10:22,second stack 1024 an third stack 1026 may be formed of snb-siateiures. The pitches of each of the periodic structures of first stac 1022, second stack 1024 and third stack 1026 are preferably between 10 nrn - 3000 ran, and more preferably between 200 nm ~ 800 nm.

[0150] A first x-z plane 1031 intersects first stack 1022. A plurality of first axes1032 lie within first x z plane 1031 and are parallel to the x-axis. A second x-z plane 1033 intersects second stack 1024. A plurality of second axes 1034 lie within second x-z plane 1033 and are parallel to the x-axis. A third x-z plane 1035 intersects third stack 1026, A plurality of third axes 1036 lie within third x-z plane 1035 and are para! lei to the x-axis.

[0151] As seen particularly in enlargement A, first stack 1022 includes a first stack first periodic structure (S1.F1) 1 42 formed together with first layer 1002 and having an SIP I pitch, designated b, along one of first stack axes 1032. First stack 1 22 further includes a first stack second periodic structure (SI P2) 1044 formed together with second layer 1004 and having an S IF2 pitch, designated {¾- n, along another of first stack axes 1032. Preferably, S1P2 pitch b-h differs from SI PI pitch b by a first stack additive term, designated n. First stack additive term n may have any non-zero value.[0015:2] It is appreciated that S1P1 1042 and SIP2 1044 at least partially overlie one another, and thus a first stack moire pattern .1 50 is visible upon imaging first stack 1022. As is known in the art, first stack moire pattern 1050 is characterized by a pitch vj, which is a function of additive term n, pitch b and pitch fi-n, as shown i equation 23:Preferably, first stack 1022 does not include periodic structures formed together with third layer 1006 which affect moire pattern 1050. However, first stack 1022 may include periodic structures formed togethe with third layer 1006 which do not affect moire pattern 1050, such as periodic structures which are periodic alongan axis parallel to the y-axis or periodic structures havin a pitch size that does not affect moire pattern 1050

[0153] As seen particularly in enlargement B, second stack 1024 includes a second stack first periodic structure (S2P1) 1052 formed together with first layer 1002 and having an S2PI pitch, designated b, along one of secon stack axes1034 It is appreciated that S2PI pitch b has the same value as SI PI pitch b. Second stack 1024 further includes a second stack second periodic structure (S2P2) 1054 formed together with second layer 1004 and having an S2P2 pitch, designated b+h, along another of second stack axes 1034 Preferably, S2P2 pi tch |H·h differs from S2P1 pitch b by a secon stack additive term, designated n. It is appreciated that second stack additive term n has the same value as first stack additive term a.

[0154] It is appreciated that S2P 1 1052 and S2P2 1054 at least partially overlie one another, and thus a second stack moire pattern 1060 is visible upon imaging second stack 1024 As is known in the art second stack moire pattern 1060 is characterized by a pitch g , which is a function of additive term n, pitch b and pitch [H-n, as shown m equation 24;Preferably, second stack 1024 does not include periodic structures formed together with third layer 1006 which affect moire partem 1060. However, second stack 1024 may include periodic structures formed together with third layer 1006 which do not affect moire pattern 1060, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch si / e that does not affect moire pattern 1060.

[0155] As seen particularly in enlargement C, third stack 1026 includes a third stack first periodic structure (S3F1) 1 62 formed together with second layer 1004 and having an S3PI pitch, designated b+h, along one of third stack axes 1036 It is appreciated that S3P1 pitch b+h has the same value as S2P2 pitch b+h. Third stack 1026 further includes a third stack second periodic structure (S3P2) 1064formed together with third layer 1006 and having an S3F2 pitch, designated b„ along another of third stack axes 1036. it is appreciated that S3P2 pitch b has the same value as S I FI pitch f!.

[0156] It is appreciated that S3P1 1062 and S3P2 1064 at least partially overlie one another, and thus a third stack moire pattern 1 70 is visible upon imaging third stack 1026. As is known in the art, third stack moire pattern 1070 is characterized by a pitch y,;, which is a function of additive term n, pitch b and pitch b-Hi, as shown in equation 25:Preferably, third stack 1026 does not include periodic structures formed together with first layer 1002 which affect moire patern 1070. However, third stack 1026 may include periodic structures formed together with firs layer 1002 which do not affect moire pattern 1070, such as periodic structures which are periodic- along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 1070

[0157] Misregistration between any two of layers 1002, 1004 and 1006 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from K.LA Corporation, of Milpitas, CA, USA. Pitches b, b-h and b- need not be optically resolvable by the misregistration metrology tool used to generate an image of target 1000. However, it is preferable that each of pitches gi, y?_ an ys is optically resolvable by the misregistration metrology tool used to generate an image of target 3000,

[0158] Reference is now- made to Figs, HA ~ i lD, which are simplified illustrations of another embodiment of a multi-layered moir target 1 100 of the present invention. Figs. l iA - I J D include illustrations in three different dimensions, indicated byc-, y- and z~axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and a y-z plane, respectively. It is notedthat Fig. I IA generally illustrates the x-y plane, while Figs. I IB, 1 1 C and HD illustrate planes parallel io the x-¾ plane.[00159| .Ills noted that target 1100 is one example of an alternative layout of target1000, described hereinabove with reference to Fig. 10, and that additional layouts are described hereinbelow with reference to Figs, 34 - 39. Target 1100 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 1102, a second layer 1104 and a third layer 1106. It is appreciated that each of first layer 1102, second layer 1 104 and third layer 1 106 defines a generally planar surface parallel to the x-y plane. First, second and third layers 1102, 1104 and 1106 may be adjacent layers but need not be. Preferably, any material between first, second and third layers 1102, 1 104 an 1 .106 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 1 1 A - 1 1 D, first layer 1102 lies below second and third layers 1 104 and 1 106, and third layer 1 106 lies above first and second layers 1102 and 1 104. It is appreciated, however, that layers 1102, 1 104 an 1106 may be arranged in an suitable order along the z-axis with respect to one another.[001601 Additionally, in a embodiment of the present invention, structures shown as being formed together with first and third layers 1102 and 1 106 may all be formed together with layer 1 102. In such an embodiment, no portion of target 1100 is formed together with layer 1106. Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 12 A - 12C.[001611 As seen particularly in Fig. 1 1 A, target 1 100 includes four target quadrants 1 1 12, 1 1 14, 1116 and 1 1 IS. In the embodiment shown in Fig. i 1A, the rotational orienta t ion i n the x-y plane of each of target quadrants 1112, 1 1 14, 1 1 16 and 1 1 18 preferably differs from the rotational orientation in the x-y plane of each of the other target quadrants 1 1 12, 1 114, 1116 and 1 118 by an integer multiple of 90°. Additionally, target 1100 preferably is characterized by rotational symmetry in either the x-direciion or the y-direction or both. In a preferred embodiment of the present invention, target 1 100 is designed such that when in a state of registration, the entirety of target. 1100 is characterized by a single point of symmetry in the x direction and a single point of symmetry in the y-direction. However, even in suchan embodiment, when in a state of misregistration, various elements of target 1 100 will be characterized by unique points of symmetry.[00.162] Each of target quadrants 1112, .1114, 1 116 and .1118 includes a first stack1 122 of periodic structures, a second stack 1124 of periodic structures and a thir5 stack 1 126 of periodic structures. Each of first slack 1 122, second stack 1124 and third stack 11 6 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 1122, second stack 1 124 and third stack 1126 overlap with one another in Figs. 1 1A ~ 111), first stack 1 122 is illustrated as lying closer to the center of target 1100 than secon stack 1124 and10 third stack 1 126, and third stack 1 126 is illustrated as lying closer to the edge of target 1100 than first stack 1 122 and second stack 1 124. However, first stack 1 122, second stack 1 124 and third stack 1 126 may be arranged in any suitable arrangement relati ve to the x-y plane with respect to one another.[001631 it is appreciated that although in the embodiment illustrated in Figs, 11 A15 - 1 I D, each of the periodic structures of first stack 1122, second stack 1 124 and third stack 1 126 are illustrated as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic structures of first stack 1122, second stack 1 124 arid third stack 1126 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic20 structures Included in first stack 1122, second stack 1 124 and third stack 1 126 may be formed of sub-structures. The pitches of each of the periodic structures of first stack. 1 122, second stack 1 124 and third stack 1126 are preferabl between 10 n - 3000 M, and more preferably between 200 nm - 800 nm,

[0164] As seen in Fig. 1 1A, in each of quadrants 1 112, 1 114, 11 16 and 1 18, a25 first plane 1131 , intersecting first stack 1 122 and including a plurality of first axes1132 lying therein, a second plane 1133, intersecting second stack 1124 and including a plurality of second axes 1134 lying therein, and a third plane 1135, intersecting third stack 1 126 and including a plurality of third axes 1 136 lying therein, are defined. Each of first plane 1 131, second plane 1133 and third planeBO 1 135 are either an x-z plane or a y~z plane, and first axes 1132, second axes 1 134 and third axes 11.36 are parallel to the respective x-axis or y-axis, depending on6Sthe orientation of first stack 1122, second stack 1124 and third stack 1 126 withi eac of quadrants 1112, 1 1 14, 1 .1 .16 and 1 118 It is appreciated that in each of quadrants 111 , 1114, 1 1 16 and 1 1 I S, first plane 1 131 , second plane 1133 and third plane 1135 are all parallel to one another.

[0165] As seen particularly in Fig 1 1 B, first stack 1 122 includes a first stack first periodic structure (S I P ! ) 1142 formed together with first layer 1 102 and having an SlPl pitch, designated 3, along one of first stack axes 1 132. First stack 1 122 further includes a first stack second periodic structure (S1 P2) 1 144 formed together with second layer i 104 and having an $ 1P2 pitch, designated §-p, along anothe of first stack axes 1132. Preferably, S1P2 pitch S-p differs from SlPl pitch d by a first stack additive term, designated p. First stack additive term p may have any non-zero value.

[0166] It is appreciated that Sl P l 1 142 and S1 P2 1 144 at least partially overlie one another, and thus a first stack moire pattern 1 150 is visible upon imaging first stack 1 122. As is known in the art, first stack moire pattern 1 15 is characterized by a pitch eh which is a function of additive term p, pitch 5 and pitch 3-p, as shown in equation 26;Preferably, first stack 1 122 does not include periodic structures formed together with third layer 1 106 which affect moire pattern 1 150. However, first stack 1 122 may include periodic structures formed together with third layer 1 106 which do not affect moire pattern 3. 150, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to first stack axes 1 132 or periodic structures having a pitch size that does not affect moire pattern 1150

[0167] As see® particularly in Fig 11C, second stack 1 124 includes a second stack first periodic structure (S2P1 ) 1152 formed together with first layer 1102 and having an S2P1 pitch, designated 6, along one of second stack axes 1134. It is appreciate that S2P1 pitch 3 has the same value as S IP 1 pitch 3. Second stack1 124 further includes a second stack second periodic structure (S2P2) 1 154 formed together with second layer U04 and having an S2P2 pilch, designated d+r, along another of second stack axes 1 134. Preferably, S2P2 pitch d+r differs from S2P 1 pitc § by a second stack additive t rm, designate p. it is appreciated that second stack additive term p has the same value as first stack additive term p.

[0168] It is appreciated that S2PI 1 152 and S2P2 1 154 at least partially overlie one another, and thus a second stack moire pattern 1160 is visible upon imaging second stack 1 124 As is known in the art, second stack moire pattern 1 160 is characterized by a pitch e?, which is a function of additive terra p, pitch S and pilch S+p, as shown in equation 27:Preferably, second stack 1 124 does not include periodic structures formed together with third layer 1106 whic affect oird pattern 11 0. However, second stack 1122 may include periodic structures formed together with third layer 1 106 which do not affect moire pattern 1160, such as periodic structures which are periodic in a plane parallel to the %~y plane along an axis that is perpendicular to second stack axes 1 134 or periodic structures having a pitch size that does not affect moire pattern 1 160.

[0169] As seen particularly in Fig. 11 D, third stack 1126 includes a third stack first periodic structure (S3F1 ) 1162 formed together with second layer 1 104 and having an S3PJ pitch, designated S+ , along one of third stack axes 1.1.36. It is appreciated that S3P1 pitch d+r has the same value as S2P2 pitch S+p. Thir stack 1 126 further includes a third stack second periodic structure (S3P2) 1 164 formed together with third layer ! 106 and having a S3P2 pitch, designated S, along another of third stack axes 1136 It is appreciated that S3P2 pitch d has the same value as SI P I pitch d.

[0170] It is appreciated that S3P1 1 162 and S3P2 1 164 at least partially overlie one another, and thus a third stack moire pattern 1 170 is visible upo imaging third stack 1126. As is known in the art, third stack moire pattern 1 170 is6?characterized by a pitch r¾, which is a function of additive term p, pitch o and pitch dtp, a shown in equation 28;Preferably, third stack 1 126 does not include periodic structures formed together with first layer 1102 which affect oird pattern 1 G70. However, third stack 1 126 may include periodic structures formed together with first layer 1102 which do not affec moire pattern 1 170, such as periodic structures which are periodic in a plane parallel to the ~y plane along an axis that is perpendicular to thir stack axes 1136 or periodic structures having a pitch: size that does not affect moire pattern 1 170.

[0171] Misregistration between any two of layers 1 .10:2, 1104 and 1 106 is preferably measured using an imagin misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commerciall available from KLA Corporation, of Milpitas. CA. USA. Pitches 5,5~p and S p need not be optically resolvable by the misregistration metrology tool used to generate an image of target 1 100. However, it is preferable that each of pitches Ci, e? arid ¾ is opticall resolvable by the misregistration metrolog tool used to generate an image of target 1100.

[0172] Reference is now made to Fig. 12A, which is a simplified flowchart illustrating a preferred method of calculating misregistration, using a multilayered moire target 1200, such as a target 1000 (Fig. 10} or target 1100 (Figs. HA- 11 D), in a direction parallel to either the x or the y direction between a first, a second and a third layer 1202, 1204 an 1206, such as layers 1002, 1004 and 1006 (Fig. 10) or 1 102, 1 104 and 1106 (Figs. HA— HD) of a multilayered semiconductor device wafer formed with target 1200. Reference is further made to Figs. I2B & 12C, which are simpli fied pictorial illustrations of first and second embodiments of a portion of the method of Fig, 12 A, respectively.100173 j While it is appreciated that when utilizing target 1 100 (Figs. 11 A - 1 I D) the faethod described with reference to Figs. 12 A - 12C may be performed only once to calculate misregistration in either the x. or the y direction, typically, the method described in Figs. 12A ~ 1.2C will be performed twice, to calculate 5 misregistration in each of the x and y directions it is also appreciated that whenutilizing target 1 00 (Fig. 10) misregistration may be calculated only in the one direction to which first, second and third stack axes 1032, 1034 and 1036 are parallel[001741 As seen at a first step 1207, a direct ion in which to measure misregistration10 is selected. When using target 1000 in the method of Figs 1:2 A & 12B, thedirection in which to measure misregistration is automatically selected to be the direction to which first, second and third stack axes 1032, 1034 and 1036 are parallel. When using target 1100 in the method of Figs. 12A & 12B, the structures of quadrants 1 1 14 and 11 38 are utilized to measure misregistration in a direction is parallel to the x-axis, and the structures of quadrants 1112 and 1116 to meas ure misregistration in a direction parallel to the y-axis.1 Odd 75 ] Preferably, at a next step 1209, an image of target 120 is generated using an imaging misregistration metrology tool havin adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging 20 misregistration metrology tool is an Archer™ 700, commercially available fromKLA Corporation, of Milpi tas, CA, USA, It is noted that pitches b, b-h, b+h, d, ό- r and d r need not be optically resolvable by the misregistration metrology tool used to generate the image of target 1200. However, it is preferable that each of pitchesfir, r¾ and e?is optically resolvable by the misregistration 25 metrology tool used to generate the image of target 1200.

[0176] In a next step 1211, and as seen in Figs 12B & 12C, first, second and third regions of interest 1212, 1214 an 1216 are selected for each of respective first, second mid third stacks 1222, 1224 and 1226, such as first, second and third stacks 1022, 1024 and 1026 (Fig. 10) or first second and third stacks 1 122, 1124 and BO 1 126 (Figs. i lA ~ 11D), in the quadrants selected in step 1207. ft is appreciated, as seen in the illustrated embodiments of Figs. 12B & 12C, that while first, secondand third regions of interest 1212, 1214 and 1216 preferably lie entirely within each of respective first, second and third stacks 1 22, 1224 and 1 26,as illustrated for first region of interest 1212, which lies completely within first stack 1222, first, second and third regions of interest 1212, 1214 and 1216 may extend beyond respective first, second and third stacks 1222, 1224 and 1226, as illustrated for regions of interest 1214 and 1216, which extend beyond respective second and third stacks 1224 an 1226 it is further appreciated that regions of interest 1212, 1214 and 1216 shown in Fig. 12B & !2C are representative regions of interest, and that other suitable regions of interest may be chosen at step 121 1. O fl 77] in a next step 1231, and as seen in Figs. 12B & l2C,a location of a point of symmetry 1232 between all instances of first region of interest 1,212 selected i step 121 ! is calculated. In a next step 1233, and as seen in Figs. 12B & 12€, a location of a point of symmetry 1234 between ail instances of second region of interest 1 14 selected in step 121 1 is calculated. In a next step 1235, and as seen in Figs. 12B & 12C, a location of a point of symmetry 1236 between all instances of third region of interest 1216 selected in ste 121 1 is calculated.[Oil 178] At a next step 1237, a distance in the direction selected at step 1207 is calculated between the location of point of symmetry 1232 of first region or regions of interest 1212 identified at step 1231 and the location of point of symmetry 1234 of second region or regions of interest 1214 identified at step1233. The distance found at step 1237 is divided by a gain zk which for target 1000 is a function of pitch b and additive term n. as shown in equation 29a:and for target 1 100 is a function of pitch d and additive term p, as shown in equation 29b:and the result is reported as the misregistration between first and second layers 1202 and 1204 in the direction selected at step 1207 ft is appreciated that inaddition to the distance calculated at step 1 37, the method further calculates an adjustment direction, such as right, left, up o down. The adjustment direction is a function of the values of pitch p and additive term n. or pitch d and additive term p, as well as which of layers 1202 and 1204 is to he adjusted.

[0179] At a next step 1239, a distance in the direction selected at step 1207 is calculated between the location of point of symmetry 1234 of second region or regions of interest 1214 identified at step 1233 and the location of point of symmetry 1236 of third region or regions of interest 1216 identified at step 1235, The distance found at step 1239 is divided by a gain z¾which for target 1000 is a function of pitch b and additive term n?as shown in equation 30a:and for target 1100 is a function pitch d and additive term p, as shown in equation 3 Oh:and the result is reported as the misregistration between first and thir layers 1202 and 1206 i n. the directio selected at step 1207, it is appreci ated tha in addition to the distance calculated at step 1239, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the values of pitch |3 and additive term n or pitch 6 and additive term p, as well as which of layers 1202 and 1206 is to be adjusted.

[0180] At a next step 1241 , a difference is calculated between the isregistration value reported at step 1237 and the misregistration value reported at step 1239. The difference calculated at step 1241 is reported as the misregistration, between second and third layers 1204 and 1206 in the direction selected at step 1207. It is appreciated that in addition to the distance calculated at step 1241, the method further calculates an adjustment direction, such as right left, up or down. The adjustment direction is a function of the values of pitch b and additive term n orpitch S and additive terra p„ as well as which of layers 1204 and 1206 is to be adjusted.[00.181] Preferably, in the embodiment described hereinabove wherein structures shown as being formed together with first and third layers 1 02 and 1206 me all formed together with layer 1202, the method described hereinabove with reference to Figs, 12A ~ 12C proceeds to calculate and report a difference between the misregistration value reported at step 1237 and the misregistratio value reported at step 1241. The difference between the misregistration values reported at steps 1237 and 1241 is useful in the calibration of the misregistration metrology tool used in the method of Figs. 12 A - 12C,I (Mil 821 It is appreciated that in an embodiment of the present invention, relevant portions of the metho described hereinabove with reference to Figs. 12A -1 C may be performed using only layers 1202 and 1204, prior to the formation of layer 120b.

[0183] Reference is now made to Fig. 13, which is a simplified illustration of another embodiment of a multi-layered moire target 1300 of the present invention. Fig. 13 includes illustrations in three different dimensions, indicated by x~, y- and 2-axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane an a y~z plane, respectively. It is noted that Fig. 13 generally illustrates the x-y plane, while enlargements A, B and C of Fig. 13 illustrate planes parallel to the x-z plane.

[0184] Target 1300 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 1302, a second layer 1304 and a third layer 1306. It is appreciated that each of first layer 1302, second layer 1304 and. third layer 1306 defines a generally planar surface parallel to the x-y plane. First, second and third layers 1302, 1304 and 1306 may be adjacent layers but need not he. Preferably, any material between first, second and third layers 1302, 1304 an 1306 is at least partially transparent to electromagnetic radiation. In tire embodiment illustrated in Fig. 13, first layer 1302 lies below second and third layers 1304 and 1306, and third layer 1306 lies above first and second layers 1302aad 1304. it is appreciated, however, that layers 1302, 1304 and 1306 may be arranged in any suitable order along the «-a is with respect to one another øø 185 j Additionally, in an embodiment of the present invention.,structures shown as being formed together with first and third layers 1302 and 1306 may ail be formed together with layer 1302 In such an embodiment, no portion of target1300 is formed together with layer 1306 Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 5A - ISC.

[0186] It is appreciated that Fig. 13 illustrates one possible layout of target 1300, and that in other embodiments of the present invention, target. 1300 may include additional structures. For example, as described hereinbelow with reference toFigs. 14A - 14D & 34 - 39, a suitable target may include multiple instances of the structures shown in Fig. 13, and those multiple instances may be arranged in various ways

[0187] Preferably, target 1300 includes a first stack 1322 of periodic structures, a second stack 1324 of periodic structures and a third stack 1326 of periodic structures. Each of first stack 1322, second stack 1324 and third stack 1326 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 1322, second stack 1324 and third stack 1326 overlap with one ano ther j Oh 188] it is appreciated that although in Fig. 13 , each of the periodic structures of first stack 1322, second stack 1324 and third stack 1326 are shown as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic structures of first stack 1322, second stack 1324 and third stack 1326 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 1322, second stack 1324 and third stack 1326 may be formed of sub-structures. The pitches of each of the periodic structures of first slack 1322, second stack 1324 and third stac 1326 are preferably between 10 am - 3000 n , and more preferably between 200 nm— 800 nm.

[0189] A first x-z plane 1331 intersects first stack 1322. A plurality of first axes 1332 lie within first x~z plane 1331 and are parallel to the x-axis, A second x-x. plane 1333 intersects second stack 1324 A plurality of second axes 1334 lie within second x-z plane 1333 and are parallel to the x-axis. A third x-z plane 1335 intersects third stack 1326, A plurality of third axes 1336 lie within third x -z plane1335 and are parallel to the x-axis.

[0190] As seen particularly in enlargement A„ first stack 1322 includes a first stack first periodic structure (SI PI) 1342 formed together with second layer 1304 and having an SIP! pitch, designated h, along one of first stack axes 1332, Preferably, first stack 1322 does not include periodic structures formed together with either of first layer 1302 or third layer 1306 which would, together with SIP i 1342, produce a moird pattern upon imaging first stack 1322 However, first stack 1322 may include periodic structures formed together with first layer 1302 or third layer 1306 which do not produce a moire pattern upon imaging first stack 1322, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a. pitch size that does not produce a moire pattern upon imaging first stack 1322.

[0191] As seen particularly in enlargement B, second stack 1324 includes a second stack first periodic structure (S2P1) 1352 formed together with first layer 1302 and having an S2P1 pitch, designated Q, along one of second stack axes1334. Second stack 1324 further includes a second stack second periodic structure (S2P2) 1354 formed together with second layer 1304 and having an S2P2 pitch, designated t, along another of second stack axes 1334,

[0192] It is appreciated that S2PI 1352 and S2P2 1354 at least partially overlie one another, and thus a second stack moire pattern 1360 is visible upon imaging second slack 1324, As Is known in the art,,second slack moire pattern 1360 is characterized by a pitch t¾, which is a function of pitch Q and pitch t, as shown i equation 31 :Preferably, second stack 1324 does not include periodic structures formed together with third layer 1306 which affect moin§ pattern 1360. However, second stack 1324 may include periodic structures formed together with third layer 1306 which do not affect motrd pattern 1360, such as periodic structures whic are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 1360.

[0193] As seen particularly in enlargement C, third stack 1326 includes a third stack first periodic structure (S3P1) 1362 formed together with second layer 1304 arid having an S3P1 pilch, designated l, along one of third stack axes 1336 Third stack 1326 further includes a third stack second periodic structure (S3F2) 1364 formed together with third layer ! 306 and having an S3P2 pitch, designated m, along another of third stack axes 1336. In an embodiment of the present invention, the values of S3P1 pitch l and S2P2 pitch i are identical and the values of S3P2 pitch m and S2P1 pitch 8 are identical.

[0194] It Is appreciated that S3F.I 1362 and S3P2 1364 at least partially overlie one another, an thus a third stack moire pattern 1370 is visible upon imaging third stack 1326. As is known in the art, third stack moire pattern 1370 is characterized by a pitch t , which is a function of pilch / . and pitc m, as shown in equation 32;Preferably, third stack 1326 does not include periodic structures formed together with first layer 1302 which affect moire pattern 1370 However, third stack 1326 may include periodic structures formed together with firs! layer 1302 which do not affect moire pattern 1370, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 1370

[0195] Misregistration between any two of layers 1302, 1304 and 1306 is preferably measured using an imaging misregistration metrology tool having adjustable polarization wavelength and numerical aperture settings. An exampleof a suitable imaging misregistration metrology tool is an Arche*·™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. Fitches 0, i, l and m. need not be optically resolvable by the misregistration metrology tool used to generate an image of target 1300. However, it is preferable that each of pitches h, KJ and k¾ is optically resolvable by the misregistration metrology tool used to generate an image of target 1300[001961 Refe nce is now made to Figs, 1 A - 14D, which are simplified illisstratioiis of another embodiment of a multi-layered moir target 1400 of the present invention. Figs. 14A - MD include illustrations in three different dimensions, indicated by x-, y- and z-axes, the three dimensions being referred to hereinafter as an x~y plane, an x-z plane and a y-z plane, respectivel . It is note that Fig. 14A generally illustrates the x-y plane, while Figs. 14B, 14C and 1.4D illustrate planes parallel to the x-z plane

[0197] ft is noted that target 1400 is one example of an alternati ve layout of target 1300, described hereinabove with reference to Fig. 13, and that additional layouts are described hereinbelow with reference to Figs. 34 ~ 39 Target 1400 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 1402, a second layer 1 04 and a third layer 1406 It is appreciated that each of first layer 1402, second: layer 1404 and third layer 1406 defines a generally planar surface parallel to the x-y plane. First, second and third layers 1402, 1404 and 1406 may be adjacent layers but need not be. Preferably, any material between first, second and third layers 1402, 1404 and 1406 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 14A - I4D, first layer 1402 lies below second and third layers 1404 and 1406, and third layer 1406 lies above first and second layer’s 1402 and 1404 It is appreciated, however, that layers 1402, 1404 and 1406 may be arranged in any suitable order along the z-axis wit respect to one another.[ 001981 Additionally, In an embodiment of the present invention, structures shown as being formed together with first and third layers 1 02 and 1406 may all he formed together with layer 1402. In such an embodiment no portion of target1400 is formed together with layer 1406, Such an embodiment is particularly useful for calibration, as described bereiobelow with reference to Figs. 15A ~ 15C.[00199 j As seen particularly in Fig. 14 A, target 1400 includes four target quadrants"1412, 1414, 1416 and 1418. hi die embodiment shown in Fig. 14A, the rotational 5 orientation in the x-y plane of each of target quadrants 1412, 1414, i4l6 and 1418 preferabl differs from the rotational orientation in the x-y plane of each of the other target quadrants 1412, 1414, 1416 and 1418 by an integer multiple of 90°. Additionally, target 1400 preferably is characterized by rotational symmetry in either the x-direction or the y-direction or both. In a preferred embodiment of the 10 present invention, target 1400 is designed such that when in a state of registration, the entirety of target 1400 is characterized by a single point of symmetry in. the x- direction and a single point of symmetry in the y-direciion. However, even in such an embodiment, when in a state of misregistration, various elements of target 1400 will be characterized by unique points of symmetry.15 [002003 Each of target quadrants 1412, 1414, 1416 and 1418 includes a first stack1422 of periodic structures, a secon stack 1 24 of periodic struct ures and a third stack 1426 of periodic structures. Each offirst stack 1422, second stack 1 :24 and third stack 1426 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 1422, second stack 1424 and third 20 stack 1426 overlap with one another. In Figs. 14 A. - 14D, first stack 1422 is illustrated as lying closer to the center of target 1400 than second stack 1424 and third stack 1426, and third stack 1 26 is illustrated as tying closer to the edge of target 1400 than first stack 1422 and second stack 1424. However, first stack 1422, second stack 1424 and third stack 1426 may be arranged in any suitable 25 arrangement relative to the x-y plane with respect to one another,

[0201] It is appreciated that although in the embodiment illustrated in Figs. 14A - 14D, each of the periodic structures of first stack 14:22, second stack 1424 and third stack 1426 are illustrated as being formed of a plurality oflines and spaces, in oilier embodiments of the invention, the periodic structures of first stack 1 :2:2, BO second stac 1424 and third stack 1426 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodicBstructures included in first stack 1422, second stack 1424 and third stack 1426 may be formed of sub-structures. The pitches of each of the periodic structures of first stack 1422, second stack 1424 and third stack 1426 are preferably between 10 nm 3000 nra, and more preferably between 200 ran ~ 800 am.

[0202] As seen in Fig. 14A, in each of quadrants 1412, 1414, 1416 and 1418, a first plane 1431 , intersecting first stack 1422 and including a plurality of first axes 1432 lying therein, a second plane 1433, intersecting second stack 1424 and including a plurality of second axes 1434 lying therein, and a third plane 1435, intersecting third stack 1426 and including a plurality of third axes 1436 lyin therein, are defined. Each of first plane 1431 , second plane 1433 and third plane1435 are either an x~z plane or a ~¾ plane, and first axes 1432, second axes 1434 and third axes 1436 are parallel to the respective x-axis or y-axis, depending on the orientation of first stack 1422, second stack 1424 and third stack 1426 within each of quadrants 1412, 1414, 1416 and 1418. It is appreciated that in each of quadrants 1412, 1414, 141 and 1418, first plane 1431, second plane 1433 and third plane 1435 are all parallel to one another.

[0203] As seen particularly in Fig, I4B, first stack 1 22 includes a first stack first periodic structure (S i PI) 1442 formed together with second layer 1404 and having an S IPI pitch, designated v, along one of first stack axes 1432. Preferably, first stack 1422 does not include periodic stractures formed together with either of first layer 1402 or third layer 1406 which would, together with SIP l 1442, produce a moire pattern upon imaging first stack 1422. However, first stack 1422 may include periodic structures forme together wi th first layer 1402 or third layer 1406 which do not produce a moire pattern upon imaging first stack 1422, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to first stack axes 1432 or periodic structures having a pitch size that does not produce a moire pattern upon imaging first stack 1422,

[0204] As seen particularly in Fig. I4C, second stack 14:24 includes a second stack first periodic structure (S2P1 ) 1452 formed together with first layer 1402 and having an. S2P1 pitch, designated ¾, along one of second stack axes 1434. Secon stack 1424 further includes a second stack second periodic structure(S2P2) 1454 formed together with second layer 1404 and having an S2P2 pitch, designated %falong another of second stack axes 1434[0O205] It is appreciated that S2P1 1452 and S2P2 1454 at least partially overlie one another, and thus a second stack moire pattern 1,460 i visible upon imaging second stack 1424. As is know in the art, second stack moire pattern 1460 is characterized by a pitch pa, which is a function of pitch x and pitch p, as shown in equatio 33:*> - ¾ <¾·M>Preferably. second stack 1424 does not include periodic structures formed together with t hird layer 1406 which affect moire pattern 1460, However, second stack 1424 may include periodic structures formed together with third layer 1406 which do not affect moire pattern .1460, such as periodic Structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to second stack axes 1434 or periodic structures having a pitch size that does not affect moire pattern 1460. 00206j As seen particularly in Fig. 14D, third stack 1426 includes a third stack first periodic structure (S3P1) 1462 .formed together with second layer 1404 and having m S3FI pitch, designate a, along one of third stack axes 1436 Third stac 1426 further includes a third stack second periodic structure (S3P2) 1464 formed together with third layer 1406 and having an S3P2 pitch, designated t, along another of third stack axes 1436. 1» an embodiment of the present invention, the values of S3P1 pitch s and S2P2 pitch p are identical and the values of S3P2 pitc t and S2P1 pitch x are identical[0020?] ft is appreciated that S3P1 1462 and S3P2 1464 at least partially overlie one another, and thus a third stack moire pattern. 1470 is visible upon imaging third stack 1426. As is known in the art, third stack moire pattern 1470 is characterized by a pitch p¾ which is a function of pitch a and pitch t, as shown in equation 34:Preferably, third stack 1426 does not include periodic structures formed together with first layer 1402 which affect raoird pattern 1470. However, third stack 1426 may include periodic structures formed together with first layer 1402 which do not affect moire pattern 1470, suc as periodic structures which are periodic in a plane parallel to the x~y plane along an axis that is perpendicular to third stack axes 1436 or periodic structures having a pitch size that does not affect moire pattern 1470.[0020$] Misregistration between any two of layers 1402, 1404 and 1406 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commerciall available from KLA Corporation, of Milpitas, CA, USA. Pitches , it, a and t need not be optically resolvable by the misregistration metrology·' tool used to generate an image of target 1400. However, it is preferable that each of pitches v, p¾and pa is optically resolvable by the misregistration metrology tool used to generate an image of target 1400.

[0209] Reference is now made to Fig. 15A, which is a simplified flowchart illustrating a preferred method of calculating misregistration, using a multilayered moire target 1500, such as a target 1300 (Fig. 13} or target 1400 (Figs. 14A -· 1.4D), in a direction parallel to either the x par the y direction between a first, a second and a third: layer 1502, 150 and 506, such as layers 3302, 1304 and 1306 (Fig. 13} or 1402, 1404 and 1406 (Figs. 14A - 14D) of a multilayered semiconductor device wafer formed with target 1500. Reference is further made to Figs. 15B & 1 SC. which are simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig, 15 A, respectively.

[0210] While it is appreciated that when utilizing target 1400 (Figs, 1 A - 1 0) the method described with reference to Figs. ISA ~ 15C may he performed only once to calculate misregistration in either the x or the y direction, typically, the method described in Figs, 15A --- 15C will be performe twice, to calculate7:6.misregistration in each of the x and y directions. It is also appreciated that when utilising target 1300 (Fig. 13;i misregistration may be calculated only in the one direction to which first, second and third stack axes 1332, 1334 and 1336 are parallel[0021 1] As seen at a first step 1507, a direction in which to measure misregistration is selected. When using target 1300 in the method of Figs, I SA & 15B, the direction in which to measure misregistration is automatically selected to be the direction to which first, second and third stack axes 1332, 1334 and 1336 are parallel. When «sing target 1400 in the method of Figs. 5A & 15B, the structures o f q uadrants 1414 and 1418 are utilized to measure misregistration in a direc tion parallel to the x~axis, and the structures of quadrants 1412 and 1416 to measure misregistration in a direction parallel to the y-axis.

[0212] Preferably, at a next step 1509, an image of target 1500 is generated using an imaging misregistration metrology tool having adjustable polarisation, wavelength and numerical aperture settings. An example of a suitable Imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA, It is noted that pitches 0, i, l, m, V, p, a and t need not be optically resolvable by the misregistration metrology tool used to generate the image of target 1500. However, it is preferable that each of pitches v, Kz, f¾, p:> and pj is optically resolvable by the misregistration metrology tool used to genera te the image of target 1500.[002131 In a next step f 51 1 , and as seen in Figs. 15B & .15C, first, second and third regions of interest 1512. 1514 and 1516 are selected for each of respective first, second and third stacks 1522, 1524 and 1526, such as first, second and third stacks 1322, 1324 and 1326 (Fig. 13) or first, second and third stacks 1422, 1424 an 1426 (Figs, 14A ~ 14D), in the quadrants selected in step 1507 It is appreciated, as seen in the illustrated embodiments of Figs. 15B & 15C, that while first, second and thud regions of interest 1512, 1514 and 1516 preferably lie entirely within each of respective first, second and third stacks 1522, 1524 and 1526, as illustrated for first region of interest 1512, which lies completely within first stack 1522, first, second and third regions o f in terest 1512, 1514 and 1516 may extend beyond71respective first, second and third stacks 1522, 1524 and 1526, as illustrated for regions of interest 1514 and 1516, which extend beyond respective second and third stacks 1524 and 1526. It is further appreciated that regions of interest 1512, 1514 and 1516 shown in Fig ! 5B & ISC are representative regions of interest, and that other suitable regions of interest may be chosen at step 1511.[002141 In a next step 1531 , and as seen in Figs. 1 SB & ISC, a location of a point of symmetry 1532 between all instances of first region of interest 1512 selected in step 151 3 is calculated in a next step 1533, and as seen in Figs. 15B &. 15C, a location of a point of symmetry 1534 between all instances of second region of interest 1514 selected in step 151 1 is calculated. I» a next step 1535, and as seers in Figs. 15B & 15C, a location of a point of symmetry 1536 between ail instances of third regio of interest 1516 selected in step 1511 is calculated.

[0215] At a next step 1537, a distance in the direction selected at step 1507 is calculated between the location of point of symmetry 1532 of first region or regions of interest 1512 identified at step 1531 and the location of point of symmetry 1534 of second region or regions of interest 1514 identified at step 1533. The distance found at step 1537 is divided by a gain in, which for target 1 00 is a function of pitch 0 and pitch t, as shown in equation 35a;and for target 1400 is a function of pitch p and pitch £, as shown in equation 35b:and the result is reported as the misregistration between first and second layers 1502 and 1504 in the direction selected at step 1507. it is appreciated that in addition to the distance calculated at step 1537, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch 1) and pitch t or pitch n and pitch V, as well as which of layers 1502 and 1504 is to be adjusted.

[0216] At a next step 1539, a distance in the direction selected at step 1507 is calculated between the location of point of symmetry 1532 of first region or regions of interest 1512 identified at step 1531 and the location of point of symmetry 1536 of third region or regions of interest 1516 identified at step 1535. The distance found at ste 1539 is divided by a gain ¾, which for target 1300 is a function of pitch l and pitch m, as shown in equation 36a:and for target 1400 is a function of pitch s and pitch t, as shown in equation.36b:and the res lt is reported as the misregistration between second and third layers1504 and 1506 in the direction selected at ste 1507, It is appreciated that in addition to the distance calculated at step 1539, the method further calculates an adjustment direction, such as right., left, up or down. The adjustment direction is a function of the relative values of pitch 0 and pitch t or pitch p and pitch x, as well as which of layers 1504 and 1506 is to be adjusted.

[0217] At a next step 1541, a misregistration value between first and third layers1502 and 1506 is calculated. In the embodiment described hereinabove wherein S3P1 pitch does not have the same value as S2P2 pitch and S3P2 pitch does not have the same value as S2P I pitch, at step 1541 a difference is calculated between the misregistration value reported at step 1537 and the misregistration value reported at step 1539. The difference calculated at step 1541 i reported as the misregistration between first and third layers 1502 and 1506 in the direction selected at step 1507. It is appreciated that in addition to the distance calculated at step 541. the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch 0 and pitch t or pitch p and pitch c, as well as which of layers 150:2 and 1506 is to be adjusted.

[0218] In the embodiment described hereinabove wherei S3 P i pitch has the same value as S2P2 pitch and S3P2 pitch has the same value as S2P.1 pitch, at step 1541 a distance in the direction selecte at step 1507 is calculated between the locatio of point of symmetry 1534 of second region or regions of interest 1514 identified at step 1533 and the location of point of symmetry 1536 of third region or regions of interest 1516 identified at step 1535. The distance found at step 1541 is divided by a gain m, which for target 1300 is a function of pitc Q and pitc i, as shown in equatio 37a;and for target 1400 is a function of pitch % and pitch £, as shown in equation 37b ;% ( \-jirZ~- (Eq. 37b)¾P and the result is reported as the Misregistration between first and third layers 1502 and 1500 in the direction selected at step I 507 It is appreciated that in addition to the distance calculated a step 1541 , the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch 0 and pitch i or pitch p and pitch x, as well as which of layers 1502 and 1506 is to be adjusted

[0219] Preferably, in the embodiment describe hereinabove wherein structures shown as being formed together with first and third layers 1502 and 1506 are all formed together with layer 1502, die method described hereinabove with reference to Figs, 15.4 - i 5C proceeds to calculate and report a difference between the misregistration value reported at step 1537 to the misregistration value reported at step 1539. The difference between die misregistration values reported at steps 1537 and 1539 is useful in the calibration of the misregistratio metrology tool used in the method of Figs. 15 A ~ 15C.100220] It is appreciated that in an embodiment of the present invention, relevant portions of the method described hereinabove with reference to Figs. 15A - I5C may be performed using only layers 1502 and 1504, prior to fte formation of layer1506 Similarly, in an embodiment of the present invention wherein layer 1506 lies below layer 1502, relevant portions ofthe method described hereinabove with reference to Figs i 5 A - 15C may be performed using only layers 1504 and 1506, prior to the formation of layer 15025

[0221] Reference is now made to Fig. 16, which is a simplified, illustration ofanother embodiment of a multi-layered moire target 1600 of the present invention. Fig. 16 includes illustrations in three different dimensions, indicated by x~, y- and z-axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and a y~z plane, respectively. It is noted that Fig. 16 generally illustrates: the10 x-y plane, while enlargements A, B and C of Fig. 16 illustrate planes parallel to the x-z plane[00222 | Target 1600 is preferably formed on a semiconductor device wafer on w¾ich are preferabl formed at least a first layer 1602, a second layer 1604 and a third layer 1606. It i s appreciated that each of first layer 1602, second layer 160415 and third layer 1606 defines a generally planar surface parallel to the x-y plane.First, second and third layers 1 02, 1604 and 1 06 may be adjacent layers but need not be. Preferably, any material between first, second and third layers 1602, 1 04 and 1606 is at least partially transparent to electromagnetic radiation in the embodiment illustrated in Fig. 16, first layer 1602 lies below second and third20 layers 1604 and 1606, and third layer 1 06 lies above first and second layers 1602 and 1604, It is appreciated, however, that layers 1602, 1604 and 1606 may be arranged hi any suitable order along the x-axis with respect to one another. f 00223 ] Additionally , in an em bodiment of the presen t: i nven tion, structures shown as being formed together with first and second layers 1602 and 1604 may all be25 formed together with layer 1602. In such an embodiment, no portion of target1600 is formed together with layer 1604. Such an embodiment is particularly useful for calibration, as described hererabe low with reference to Figs. 18A - 18C. Additionally, in another embodiment of the present invention, structures shown as being formed together with first and third layers 1 02 and 1606 may all beBO forme together with layer 1602. In such an embodiment, no portion of target1600 is formed together with layer 1606 Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. .18A - 18€. i 00224] It is appreciated that Fig. 16 illustrates one possible layout of target 1600, and that in other embodiments of die present invention»target 1600 may include additional structures. For example, as described hereinbelow with reference to Figs. 1?A - 17D & 34 - 39, a suitable target may include multiple instances of the structures shown in Fig. 16, and those multiple instances may be arranged in various ways.

[0225] Preferably, target 1 00 includes a first stack 1622 of periodic str uctures, a second stack 1624 of periodic structures and a third stack 1626 of periodic structures. Each of first stack 1622, second stack 1624 and third stack 1626 includes one or more periodic structures each periodic structure having a pitch. Preferably, none of first stack 1 22, second stack 1624 and third stack 1626 overlap with one another.

[0226] it is appreciated that although in Fig. 16, each of the periodic structures of first stack 1622, second stack 1624 and third stack 1626 are shown as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic structures of first stack 1622, second stack 1624 and third stack 1626 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 1622, second stack 1624 and third stack 1626 may be formed of sub-structures. The pitches of each of the periodic structures of first stack 1622, second stack 1624 and third stack 1626 are preferably between 10 nm - 3000 nm, and more preferably between 200 nm - 800 nm

[0227] A first x-x plane 1631 intersects first stack 1622, A plurali ty of first axes 1632 lie within first x-z plane 1631 and are parallel to the x-axis. A second x-z plane 1633 intersects second stack 1624. A plurality of second axes 1634 lie within second x -z plane 1633 and are parallel to the x-axis. A third x-x plane 1635 intersects third stack 1626 A plurality of third axes 1 36 lie within third x -z plane 1 35 and are parallel to the x-axis.

[0228] As seen particularly in enlargement A, first stack 1622 includes a first stack first periodic structure (SIP I ) 1642 formed together with second layer 1604 and having an S1.P.I pitch, designated f, along one of first stack axes 1632. Preferably, first stack 1622 does not include periodic structures formed together 5 with either of first layer 1602 or third layer 1606 which would, together with SI P!1642, produce a moire pattern upon imaging first stack 22 However, first stack 1622 may include periodic structures formed together with first layer 1602 or third layer 1606 which do not produce a moire pattern upon imaging first stack 1622, such as periodic structures which are periodic along an axis parallel to the y-axis 10 or periodic structures having pitch size that does not produce a moire pattern upon imaging first stack 1622

[0229] As seen particularly in enlargement B, second stack 1624 includes a second stack first periodic structure (S2P1 ) 1652 formed together with first layer 1602 andhaving an S2PI pitch, designated %, along one of second stack axes 1634. is Preferably, second stack 1624 does not include periodic structures formed together with either of secon layer 1604 or third layer 1606 which would, together with S3 PI 1652, produce a moire pattern upon imaging second stack 1624 However, second stac 1624 may include periodic structures formed together with second layer 1604 or third layer 1606 which do not produce a moire 20 pattern upon imaging second stack 1624, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not produce a moire pattern upon imaging second stac 1624.

[0230] As seen particularly in enlargement C, third stack 16:26 includes a third stack first periodic structure (S3P I } 1 62 formed together with second layer 1604 25 and having an S3P1 pitch, designated , along one of third stack axes 1636. Thirdstack 1 26 further includes a third stack second periodic structure (S3P2) 1664 formed together with third layer 1606 and having an S3P2 pitch, designated co, along another of third stack axes 1636.

[0231] it is appreciated that S3P1 1662 and S3P2 1664 at least partially overlieBO one another, and thus a third stack moire pattern 167(1 is visible upon imaging third stack 1626. As is known in the art, third stack moire pattern 1670 ischaracterized by a pitch which is a function of pitch y and pitch ©, as shown i equation 38:Preferably, third stack 1626 does not include periodic structures formed together with first layer 1602 which affect moire pattern 1670 However, third stack 1 26 may include periodic structures formed together with first layer 1 02 which do not affect moire pattern 1 70, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 1670,

[0232] Misregistration between any two of layers 1602, 1604 and 1606 is preferably measured using an imaging misregistration metrology tool having adjustable polarisation, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation. of Milpitas.€A, USA. Pitches y and w need not be optically resolvable by the misregistration metrology tool used to generate an image of target 1600. However, it is preferable that each of itches f, % and V¾ is optically resolvable by the misregistration metrology tool used to generate an image of target. 1600.

[0233] Reference is now made to Figs. 17A - 17D, which are simplifie illustrations of another embodiment of a multi-layered moire target 1700 of the present invention. Figs. 17A - I7D include illustrations in three different dimensions, indicated by x-, y- and z~axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and a y-z plane, respectively. It is noted that Fig. 17 A generall illustrates the x-y plane, while Figs. I 7B, 17C arid I 7D illustrate planes parallel to the x-z plane.

[0234] It is noted that target 1700 is one example of an alternative layout of target 1600, described hereinabove with reference to Fig. 16, and (ha t additional layouts are described hereinbelow with reference to Figs. 34 ~ 39 Target 1700 is preferably formed on a semiconductor device wafer on which are preferablyformed at least a first layer 1702, a second layer 1704 and a third layer 1706. It is appreciated that each of first layer 1702, second layer 1704 and third layer 1706 defines a generally planar surface parallel to the x~y plane. First, second and third layers 1702, 1704 an 1706 may be adjacent layers hist nee not be. Preferably, any material between first, second and third layers 1702, 1704 and 1706 is at least partially transparent to electromagnetic radiation. In die embodiment illustrated in Figs. S 7A - 17D, first layer 1702 lies below second and third layers 1704 and 1706, and third layer 1706 lies above first and second layers 1702 and 1704. It is appreciated, however, that layers 1702, 1704 and 1706 may be arranged in any suitable order along the / -axis with respect to one another.

[0235] Additionally, in an embodiment of the present invention, structures shown as being formed together with first and second layers 1702 and 1704 may all be formed together with layer 1702. In such an embodiment, no portion of target 1700 is formed together with layer 1704. Such an embodiment is particularly useful for calibration, as described hereitibelow with reference to Figs. 1 BA - 18C.Additionally, in another embodiment of the present invention, structures shown as being formed together with lust and third layers 1702 and 1706 may all be formed together with layer 1702. In such an embodiment, no portion of target 1700 is formed together with layer 1706. Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 18A 18C.

[0236] As seen particularly in Fig. 17A, target 1700 includes four target quadrants 1712, 1714, 1716 and 1718 In the embodiment shown in Fig. 17A, the rotational orientation in the x~y plane of each of target quadrants 1712, 1714, 1716 and 1718 preferabl differs from the rotational orientation in the x-y plane of each of the other target quadrants 1712, 1714, 1716 and 1718 by an integer multiple of 90*.Additionally, target 1700 preferably is characterized by rotational symmetry in either the x-direciion or the y-directkm or both. In a preferred embodiment of the present invention, target 1700 is designed such that when in a state of registration, the entirety of target 1700 is characterized by a single point of symmetry in the x- direction and a single point of symmetry in the y-directkm. However, even in suchan embodiment, when in a state of misregistration, various elements of target 1700 will be characterized by unique points of symmetry.10023? j Each of target quadrants 1712, .1714, 1716 and .1718 includes a first stack1722 of periodic : structures, a second stack 1724 of periodic structures and a thir stack 1726 of periodic structures. Each of first stack 1722 second stack 1724 and third stack 1726 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 1722, second stack 1724 and third stack 1726 overlap with one another in Figs. i ?A ~ 17D, first stack 1722 is illustrated as lying closer to the center of target 1700 than secon stack 1724 and third stack 1726, and third stack 1726 is illustrated as lying closer to the edge of target 1700 than first stack 1 22 and second stack 1724. However, first stack 1722, second stack 1724 and third stack 1726 may be arranged in any suitable arrangement relati ve to the x-y plane with respect to one another.

[0238] it is appreciated that although in the embodiment illustrated in Figs 17 A - 17.D, each of the periodic structures of first stack 1722, second stack 1724 and third stack 1726 are illustrated as being formed of a plurality' of lines and spaces, in other embodiments of the invention, the periodic structures of first stack 1722, second stack 1724 and third stack 1726 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 1722, second stack 1724 and third stack 1726 may be formed of sub-structures. The pitches of each of the periodic structures of first stack. 1722, second stack 1724 and third stack P26 are preferably between 10 x - 3000 urn, and more preferably between 200 nm - 800 nm,

[0239] As seen in Fig. 17A, in each of quadrants 1712, 1714, 1716 and 1718, a first plane 1731 , intersecting first stack 1722 and including a plurality of first axes 1732 lying therein, a second plane 1733, intersecting second stack 1724 and including a plurality of second axes 1734 lying therein, and a third plane 1735, intersecting third stack 1726 and including a plurality of third axes 1736 lying therein, are defined. Each of first plane 1731, second plane 1733 and third plane 1735 are either an x-z plane or y~z plane, and first axes 1732, second axes 1734 and third axes 1 36 are parallel to the respective x-axis or y-axis, depending onthe orientation of first stack 1722, second stack 1724 and third stack 1726 within each of quadrants 1712, 1714, 1716 and 1718. It is appreciated that in each of quadrants 1712, 1714, 1716 and 1718, first plane 173.1 , second plane 1733 an third plane 1735 are all parallel to one another.

[0240] As seen particularly in Fig, 1 ?B, first stack 1722 includes a first stack first periodic structure (SI Pi ) 1742 formed together with second layer 1704 and having an SlPi pitch, designated G, along one of first stack axes 1732, Preferably, first stack 1722 does not include periodic structures formed together with either of first layer 170 or third layer 1706 which would, together with SI P I 1742, produce a moire pattern upon imaging: first stack 1722. However, first stack 1722 may include periodic structures formed together with first layer 1702 or third layer 1706 which do not produce a moire pattern upon imaging first stack 1722, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to first stack axes 1732 or periodic structures having a pitch size that does not produce a moire paten upon imaging first stack 1722.[(10241: ] As seen particularly in Fig, 17C, second stack 1724 includes a second stack first periodic structure (S2P1) 1752 formed together with first layer 1702 and having an S2P! pitch, designated Q, along one of second stack axes 1734. Preferably, secon stack 1724 does not include periodic structures formed together with either of second layer 1704 or third layer 1706 which would, together with SIP! 1 752, produce a moire pattern upon imaging second slack 1724. However, second stack 1.724 may include periodic structures formed together wi th second layer 1704 or third layer 1706 which do not produce a moire pattern upon imaging second stack 1724, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to second stack axes 1734 or periodic structures having a pitch size that does not produce a moire pattern upon imaging second stack 1724.

[0242] As seen particularly in Fig. I7D, third stack 1726 includes a third stack first periodic structure (S3P 1 ) 1762 formed together with second layer 1704 and having an S3F1 pitch, designated A, along one of third stack axes 1736, Third stack 1726 further includes a third stack second periodic structure (S3P2) 1764formed together with third layer 1706 and having an S3P2 pitch, designated S, along another of third stack axes 1736.

[0243] It is appreciated that S3P1 1762 and S3P2 1764 at least partially overlie one another, and thus a third stack moire pattern 1770 is visible upon imaging third stack 1726, As is known in the art, third stack moire pattern 1770 is characterized by a pitch IE, which is a func tion of pitch A and pitch X, as shown in equatio 39:¾ = ¾ (Eq. 39)Preferably, third slack 1726 does not include periodic structures formed together with first layer 1702 which affect moire pattern 1770. However, third stack 1726 may include periodic Structures formed together with first layer 1702 hich do not affect moire pattern .1770, suc as periodic structures which ate periodic in a plane parallel to the x-y plane along an axis dtat is perpendicular to third stack axes 1736 or periodic structures having a pilch size that doe not affect moire pattern 1770.

[0244] Misregistration between any two of layers 1702, 1704 an 1706 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration etrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. Pitches L: and E need not be optically resolvable by the misregistration metrology tool used to generate an image of target 1700. However, it is preferable that each of pitches G, 6 and 1¾ is optically resolvable by the misregistratio metrology tool used to generate an image of target 1700.

[0245] Reference is now made to Fig. ISA, which is a simplified flowchart illustrating a preferred method of calculating misregistration, using a multilayered moire target 1800, such as a target 1600 (Fig. 16) or targe 1700 (Figs. 17 A 1 D), in a direction parallel to either the x or the y direction between a first, a second and a third layer 1802, 1804 and 1806, such as layers 1602, 1604 and1606 (Fig. 16) or 1702, 1704 sod 1706 (Mgs. 17A - 17D) of a multilayered semiconductor device wafer formed with target 1800. Reference is further made to Figs. 18.B & 18CSwhich are simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig. 18 A, respectively.

[0246] While it is appreciated that when utilizing target 1700 (Figs i 7A ~ 17D) the method described with reference to Figs. 18A - 18€ may be performed only once to calculate misregistration in either the x or the y direction, typically, the method described in Figs, ISA ~ 18C will be performed twice, to calculate misregistration in each of the x and y directions. It is also appreciated that when utilizing target 1600 (Fig. 16) misregistration may be calculated only in the one direction to which first, second and third stack axes 1632. 1634 and 1636 are parallel.

[0247] As seen at a first step 1807, a direction: in which to measure misregistration is selected. When using target 1600 in the method of Figs. 18A & 1 SB, the direction in which to measure misregistration i automatically selected to be the direction to which first, second and third stack axes 1632, 1634 and 1636 are parallel. When using target 1700 in the method of Figs. ISA & if®, the structures of quadrants 1714 and 17.18 are utilized to measure misregistration in a direction parallel to the x-axis, and the structures of quadrants 1712 and 1716 to measure misregistration in a direction parallel to the y~axis.[002481 Preferably, at a next step 1809, an image of target 1800 is generated using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. it is noted that pitches ©, A and X need not be optically resolvable by die misregistration metrology tool used to generate the image of target 1800. However, it is preferable that each of pitches f, c, Vh ! . Q and fb is optically resolvable by the misregistration metrology tool used to genera te the image of target 1800.

[0249] la a next step 181 and as seen in Figs 18B & S8C, first, second and third regions of interest 1812, 1814 and 1816 are selected for each of respecti ve first, second and third stacks 1822, 1824 and 1826, such as first, second and third stacks 1622, 1624 and 1626 (Fig. 16) or first, second and third stacks 1722, 1724 and 1726 (Figs. 17A -- 17D), in the quadrants selected in step 1807, it is appreciated, as seen in the illustrated embodiments of Figs. 18B & 18C, that while first, second and third regions of interest 1812, 1814 and 1816 preferably lie entirely within each of respective first, second and third stacks 1822, 1824 and 1826, as illustrated for first region of interest 1812, which lies completely within first stack 1822, first, second and third regions of interest 1812, 1814 and 1816 may extend beyond respective first, second and third stacks 1 22, 1824 and 1 26, as illustrated for regions of interest 1814 and 1816, which extend beyond respective second and third stacks 1824 and 1826. It is further appreciated that regions of interest 1812, 1814 and 1816 shown i Fig, 18B & 18C are representative regions of interest, and that other suitable regions of interest may be chosen at step 181 1 ,

[0250] I a next step 1831, and as seen in Figs. 18B & 18C, a location of a point of symmetry' 1832 between all instances of first region of interest 1812 selected in step 81 1 is calculated. In a next step 1833, and as seen in Figs. 18B & 18C, a location of a point of symmetry 1834 between all instances of second region of interest 1814 selected in step 181 1 is calculated. In a next step 1835, and as seen in Figs, 1 B & 18C, a location of a point of symmetry 1836 between all instances of third region of interest 1816 selected in step 181 1 is calculated

[0251] At a next step 1837, a distance in the: direction selected at step 1807 is calculated between the location of point of symmetry' 1832 of first region or regions of interest 1812 identified at step 1831 and the location of point of symmetry 1834 of second region or regions of interest 1814 identified at step 1833. The distance found at step 1837 is reported as the misregistration between first and second layers 1802 and 1804 in the direction selected at ste 1807, it is appreciated that in addition to the distance calculated at step 1837, the method further calculates an adjustment direction, such as right, left, up or down. The¾)adjustment direction is a function of the locations of points of symmetry f 832 and 1834, as well as which of lasers 1802 and 1806 is to be adjusted.{ 00252 j At a next step 1839, a distance in the direction selected at step 1807 is calculated between the location of point of symmetry 1832 of first region or regions of interest 1812 identified at step 1831 and the location of point of symmetry 1836 of third region or regi ons of interest 1816 identifi ed at step 1835, The distance found at step 1 39 is divided by a gain Wi, which for target 1600 is a function of pitch y and pitch re, as shown in equation 40a:and for target 1700 is a function of pitch A and pitch X, as shown in equation 40b:and the result is reported as:the misregistration between second and third layers 1804 and 1806 in the direction selected at step 1807. It is appreciated that in addition to the distance calculated at step 1839, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch y and pi tch to or pitch A and pitch X, as well as which of layers 1804 and 1806 is in he adjusted ,

[0253] At a next step 1841, & difference is calculated between the misregistration value reported at step 1837 and the misregistration value reported at step 1839, The difference calculated at step 1841 is reported as the misregistration between firs and third layers 1802 and 1806 in the direction selected at step 1807. It is appreciated that in addition to the distance calculated at step 1841 , the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch y and pitch w or pitch A and pitch S, as well as which of layers 18(12 and 1806 is to be adjusted

[0254] Preferably, in the embodiment described hereinabove wherein structures shown as being formed together with first and second layers 1802 an 18(34 are9!all formed together with layer 1802, the method described hereinabove with reference to Figs. 18A ~ 18C proceeds to calculate and report s difference between the misregistration value reported at step 1839 to the misregistration value reported at step 1841. The difference between the misregistration values reported at steps 1839 and 1841 is useful in the calibration of the misregistration metrology loot used in the method of Figs. 18A ~ 18C.

[0255] Preferably, in the embodiment described hereinabove wherein structures shown as being formed together with first and third layers 1802 and 1806 are all formed together with layer 1802, the metho described hereinabove with reference to Figs. ! 8 A - 18C proceeds to calculate and report a di f ference between the misregistration value reporte at step 1837 to the misregistration value reported at step 1839. The difference between the misregistration values reported at steps 1837 and 1839 is useful in the calibration of the misregistration metrolog tool used in the method of Figs. 1 A - ! 8C.

[0256] It is appreciated that in an embodiment of the present invention, relevant portions of the method described hereinabove with reference to Figs. 1 A ~ 18C may be performed using only layers 1802 and 1804, prior to the formation of layer 1 06. Similarly, in an embodiment of the present invention wherein layer 1806 lies below- layer 1802, relevant portions of the method described hereinabove with reference to Figs. 18 A - 1 C may he performed using only layers 1804 and 1806, prior to the formation of layer 1802.

[0257] Reference is now made to Figs, I 9A - 19D, which are simplified illustrations of another embodiment of a multi-layered moire target 1900 of the present invention. Figs. 19A - 19D include illustrations in three different dimensions, indicated by x-*y- and z-axes, the three dimensions being referred to hereinafter as an x~y plane, an x-z plane and a y~z plane, respectively, it is noted that Fig. 19A generally illustrates the x-y plane, while Figs. I9B, T9C and 19D illustrate planes parallel to the x-z. plane.

[0258] Target 1900 is preferably formed on a semiconductor device wafer on which are preferably formed at least a -first layer 1902, a second layer 1904. a thirdlayer 1906 and a fourth layer 1908. It is appreciated that each of first layer 1902, second layer 1904, third layer 1906 and fourth layer 1908 defines a generally planar surface parallel to the x-y plane. First, second, third and fourth layers 1902, 1904, 1906 and 1908 may be adjacent layers but need not be. Preferably, any material between first, second, third and fourth layers 1902, 1904, 1906 and 1908 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 19A - 19D, first layer 1 02 lies below second, third and fourth layers 1904, 1906 and 1908, second layer 1904 lies below third and fourth layers 1906 and 1908, and fourth layer 1908 lies above first, second and third layers 1902, 1904 and 1906. It is appreciated, however, that layers i 902, 1904, 1906 and1 08 may be arranged in any suitable order along the x-axis with respect to one another.{00259! Additionally, in an embodiment Of the present invention, structures shown as being formed together with second and third layers 1 04 and 1906 may all be formed together with layer 1904. In such an embodiment, no portion of target1900 is formed together with layer 1906, Such an embodiment is particularly useful for calibration, as described hereinbeiow with reference to Figs. 21 A - 21€. Additionally, in another embodiment of the present invention, structures shown as being formed together with second and fourth layers 1904 and 1908 may all be formed together with layer 1904. in such an embodiment, no portion of target1900 is formed together with layer 1908. Such an embodiment is particularly useful for calibration, as described herei beiow with reference to Figs. 21 A ~ 2 i C. Additionally, in another embodiment: of the present in vention, structures shown as being formed together with third and fourth layers 1906 and .1 08 may all be formed together with layer 1 06. in such an embodiment, no portion of targe1900 is formed together with layer 1908. Such an embodiment is particularly useful for calibration, as described hereinbeiow with reference to Figs 21 A - 21C.100260] it is appreciated that Figs. 1 A - 19D illustrate one possible layout of target 1.900, and that to other embodiments of the present invention, target 1 00 may include additional structures. For example, as described hereinbeiow with reference to Figs. 20A - 20D & 34 - 39, a suitable target may include multiple9?instances of the structures shown in Figs. 19 A - 190, and those multiple instances may be arranged in various ways.[00261 j Preferably, target 1 00 includes a first stack 1922 of periodic structures, a second stack 1924 of periodic structures and a third stack 1926 of periodic structures. Each of first stack 1922, second stack 1924 and thir stack 1926 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 1922, second stack 1924 and third stack 1926 overlap with one another.

[0262] It is appreciated that although in Figs. 19A - 190, each of the periodic structures of first stack 1 22, second stack 1924 and third stack 1926 are shown as being formed of a plurality of li es and spaces, in other embodiments of the invention, the periodic structures offirst stack 1922, second stack 1924 and thir stack 1926 may he formed of any suitable periodic features. It is further appreciated that die periodic features forming the periodic structures included in first stack 1922, second stack 1924 and third stack 1926 may be formed of substructures. The pitches of each of the periodic structures of first stack 1922, second stack 1924 and third stack 1926 are preferably between 10 urn - 3000 nm, and more preferably between 200 urn—800 nm.

[0263] A first x~z plane 1931 intersects first stack 1922. A plurality of first axes1 32 lie within first x-z plane 1 31 and are parallel to the x-axis, A second x-z plane 1933 intersects second stack 1924, A plurality of second axes 1934 lie within second x-x plane 1933 and are parallel to the x-axis. A third x-z plane 1 35 intersects third stack 1 26. A plurality of third axes 1936 lie within third x~z plane 1935 and are parallel to the x-axis,

[0264] As seen particularly in Fig, 19B, first stack 1922 includes a first stack first periodic structure (S1P1) 1942 formed together with first layer 190:2 and having an Sl.Pl pitch, designated n along one of first stack axe 1932. First stack 1922 further includes a first stack secon periodic structure (SIP2) 1944 forme together with secon layer 1904 and having an S1P2 pitch, designated 3, along another of first stack axes 1932.

[0265] It is appreciated that SIPI 1942 aid SIP2 1944 at least partially overlie one another, and thus a first stack oioifo pattern 1 50 is visible upon imaging first stack 1.922. As is known in the art, first stack moire pattern 1950 is characterized by a pitch S5, which is a function of pitches S and a, as shown in equation 41 :Preferably, first stack 1922 does not incinde periodic structures formed together with third layer 1906 or fourth layer 1 08 which affect moire pattern 1 50. However, first stack 1922 may Include periodic structures formed together with third layer 1906 or fourth layer 1908 which do not affect moire pattern 1 50, suc as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 1950.

[0266] As seen particularly in Fig. 19C, second stack 1924 includes a second stack first periodic structure (S2P1 ) 1952 formed together with first layer 1902 and having an S2P1 pitch, designated qs, along one of second stack axes 1934. Preferably, S2P1 pitch qx is related to SIPI pitch x by a second stack multiplicative factor, designated q, Second stack multiplicative .factor q may be any positive number. Second stack 1924 further includes a second stack secon periodic structure (S2P2) 1954 formed together with third layer 1906 and having an S2P2 pitch, designated qa, along another of second stack axes 1934. Preferably, S2P2 pitch tp is related to S 1 P2 pitch 2 by second stack multiplicative factor q. It is appreciated that secon stack multiplicative factor q relating S2P2 pitch q2 to S1 P2 pitch 2 has foe same value as secon stack multiplicative factor q relating S2P1 pitch qx to SIPI pitc x in an embodiment of the present invention, the value of q is 1 and thus S2P1 pitch qK is identical to Si PI pitch X and S2P2 pitch qzs is identical to SI P2 pitch 3.

[0267] it is appreciated that S2P1 1952 and S2P2 1954 at least partially overlie one another, and thus a second stack moire pattern I 60 is visible upon imaging secon stack 1924. As is known in the art, second stack moire pattern i 960 ischaracterized by a pitch s¾which is a function of second stack multiplicative factor q, pitch X and pitch 2, as shown in equation 42:Preferably, second stack 1924 does not include periodic structures formed together with second layer 1904 or fourth layer 1908 which affect moire pattern1960. However second stack 1924 may include periodic structures formed together with second layer 1904 or fourth layer 1 08 which do not affect oire pattern i960, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern i960.

[0268] As seen particularly in Fig, 19D, third stack 1926 includes a third stack first periodic structure (S3P!) 1962 formed together with first layer 1902 and having an S3P1 pitch, designated rx, along one of third stack axes 1936 Preferably, S3P 1 pitch rx is related to SIP! pitch x by a third stack multiplicative factor, designated r. Third stack multiplicative factor r may be any positive number. Third stack 1926 further includes a third stack second periodic structure (S3 2) 1964 formed together with fourth layer 1908 and having an S3P2 pitch, designated n, along another of third stack axes 1936. Preferably, S3P2 pitch o is related to S1P2 pitch 2 by third stack multiplicative factor r. It is appreciated that third stac multiplicative factor r relating S3P2 pitch to S1 P2 pitch a has the same value as third stack multiplicative factor r relating S3 1 pitch rfc to SI Pi pitch 8 In an embodiment of the present invention, the value of f is 1 and thus S3P1 pitch rx is identical to SI P i pilch x and S3P2 pitch t3 is identical to S1P2 pitch 3.

[0269] It is appreciated that S3Pi 1962 an S3P2 1964 at least partially overlie one another, and thus a third stack moire pattern 1970 is visible upon imaging third stack 1926 As is known in the art, third stack moire pattern 1970 is characterize by a pitch ¾, which is a function of third stack multiplicative factor r, pitch 8 and pitch a, as shown In equation 43;%¾ -rO » «>Preferably, third stack 1926 does not include periodic structures formed together with second layer 1904 or third layer 1906 which affect moire pattern 1970. However, third stack 1926 may include periodic structures formed together with second layer 1904 or third layer 1 06 which do not affect moire pattern 1970, such as periodic structures; which are periodic along an axis parallel to the y-axis or periodic structures having a pitc size that does not affect moM pattern 1970.

[0270] Misregistration between any two of layers 1904, 1906 and 1908 is preferably measured using m imaging misregistration metrology too! having adjustable polarisation, wavelength and numerical aperture settings. As example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA. IJSA. Pitches R, 2, qs, tp, rx and need not be opticall resolvable by the misregistration metrology tool used to generate an image of target 1900. However, it is preferable that each of pitches ¾, ¾ and ¾ is optically resolvable by the misregistration metrology tool used to generate an image of target 1900.

[0271] Reference is now made to Figs. 20A - 20.D, which are simplified i llustrations of another embodiment of a mu lti -layered moire target 2000 of the present invention. Figs. 20Ά - 20D include illustrations in three different dimensions, indicate by x~, y- and / .-axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and y- plane, respectively it is noted that Fig, 20A generally illustrates the x-y plane, while Figs. 20B, 20C and 20D illustrate planes parallel to the x-x plane.! 00272] It is noted that target 2000 is one example of an alternative layout of target 1900, described hereinabove with reference to Figs 1.9A - 19D, and that additional layouts are described herembelow with reference to Figs. 34 ~ 39. Target 2000 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 2002, a second layer 2004, a third layer 2006 and a fourth layer 2008. It is appreciated that each of first layer 2002, secondlayer 2004, third layer 2006 and fourth layer 2008 defines a generally planar surface parallel to the x-y plane. First, second, third and fourth layers 2002, 2004, 2006 and 2008 may be adjacent layers but need not he. Preferably, any material between first, second, third an fourth layers 2002, 2004, 2006 and 2008 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 20A ~ 20D, first layer 2002 lies below second, third raid fourth layers 2004, 2006 and 2008, second layer 2004 lies below third and fourth layers 2006 and 2008, and fourth layer 2008 lies above first, second and third layers 2002, 2004 and 2006. It is appreciated, however, that layers 2002, 2004, 2006 and 2008 may be arranged in any suitable order along the z~axis with respect to one another.

[0273] Additionally, in an embodiment of the present invention, structures shown as being formed together with second and third layers 2004 and 2006 may all be formed together with layer 2004. In such an embodiment, no portion of large! 2000 is formed together with layer 2006. Sitch an embodiment is particularly useful for calibration, as described hereinbeiow with reference to Figs. 21 - 21C.Additionally, in another embodiment of the present invention, structures shown as being formed together with second and fourth layers 2004 and 2008 may all be formed together with layer 2004. fn such an embodiment, no portion of target 2000 is formed together with layer 2008. Such an embodiment is particularly useful for calibration, as described hereinbeiow with reference to Figs. 21 A - 21 C.Additionally, in another embodiment of the present invention, structures shown as being formed together with third and fourth layers 2006 and 2008 may all be formed together with layer 2006. In such an embodiment, no portion of target 2000 is formed together with layer 2008 Such an embodiment is particularly useful for calibration, as described hereinbeiow with reference to Figs. 2JA-2IC.

[0274] As seen particularly in Fig, 20 A, target 2000 includes four target quadrants2012, 2014, 2016 and 2018 la the embodiment shown in Fig. 20A, the rotational orientation in foe x-y plane of each of target quadrants 2012, 2014, 2016 and 2018 preferably differs from the rotational orientation in the x-y plane of each of the other target quadrants 2012, 2014, 2016 and 2018 by an Integer multiple of 90AAdditionally, target 2000 preferably is characterized by rotational symmetry ineither the x-directioo or the y-dlrection or both. In a preferred embodiment of the present invention, target 2000 is designed such that when in a state of registration, the entirety of target 2000 is characterized by a single point of symmetry in the x- direction and a single point of symmetry in the y-direction. However, even in such 5 an embodiment, when in a state of misregistration, various elements of target 2000 wilt be characterized by unique points of symmetry.

[0275] Each of target quadrants 2012, 2014, 2016 and 2018 includes a first stack 2022 of periodic structures, a second stack 2024 of periodic structures and a third stack 2026 of periodic structures. Each of first stack 2022, second stack 2024 and 10 third stack 2026 includes one or mom periodic structures*eac periodic structurehaving a pitch. Preferably, none of first stack 2022, second stack 2024 and third stack 2026 overlap with one another. In Figs. 20A. - 20D, first stack 2022 is illustrated as lying closer to tire center of target 2000 than second stack 2024 and third stack 2026, and third stack 2026 is illustrated as lying closer to the edge of is target 2000 than first stack 2022 and second stack 2024. However, first stack2022, secon stack 2024 and third stack 2026 may be arranged in any suitable arrangement relative to the x-y plane with respect to one another.

[0276] It is appreciated that although in the embodiment illustrated in Figs. 20A ~ 200, each of the periodic structures of first stack 2022, second stack 2024 and 20 third stack 2026 are illustrated as being formed of a plurality of lines and spaces,in oilier embodiments of the invention, the periodic structures of first stack 2022, second stack 2024 and third stack 2026 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 2022, second stack 2024 and third stack 2026 25 may be formed of sub-structures. The pitches of each of the periodic structures offirst stack 2022, second slack 2024 and third stack 2026 are preferably between 10 nm - 3000 on i, and snore preferably between 200 urn ··· 800 nm.

[0277] As seen in Fig. 20A, in each of quadrants 2012, 2014, 2016 and 2018, a first plane 2031 , intersecting first stack 2022 and including a plurality of first axesBO 2032 lying therein, a second plane 2033, intersecting second stack 2024 and including a plurality of second axes 2034 lying therein, and a third plane 2035,intersecting third stack 2026 and including a plurality of third axes 2036 lying therein, are defined. Each of first plane 2031 , second plane 2033 and third plane 2035 are either an x~z plane or a y -x plane, and first axes 2032, second axes 2034 and third axes 2036 are parallel to the respective x-axis or y-axis, depending on the orientation of first stack 2022, second stack 2024 and third stack 2026 within each of quadrants 2012, 2014, 2016 and 2018 It is appreciated that in each of quadrants 2012, 2014, 2016 and 2018, first plane 2031, second plane 2033 and third plane 2035 are all parallel to one another.['00278] As seen particularly in Fig, 20B, first staek 2022 includes a first stack first periodic structure (SI PI) 2042 formed together with first layer 2002 and having an SIP! pitch, designated*1, along one of first stack axes 2032, First stack 2022 further includes a first stack second periodic structure (S1P2) 2044 formed together with second layer 2004 and having an S1P2 pitch, designated n, along another of first stack axes 2032.

[0279] It is appreciated that Si PI 2042 and SI P2 2044 at least partially o verlie one another, and thus a first stack moire pattern 2050 is visible upon imaging first stack 2022, As is known in the art, first stack moire pattern 2050 is characterized by a pitch n, which is a function of pitches and n, as shown in equation 44; v = IS «¾ «> Preferably, first stack 2022 does not include periodic structures formed together with third layer 2006 or fourth layer 2008 which affect moire pattern 2050. However, first stack 2022 may include periodic structures formed together with third layer 2006 or fourth layer 2008 which do not affect moire pattern 2050, such as periodic struc tures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to first stack axes 2032 or periodic structures having a pitch size that does not. affect moire pattern 2050.

[0280] As seen particularly in Fig. 20C, second stack 2024 includes a second stack first periodic structure (S2P1 ) 2052 formed together with first layer 2002 and having an S2P1 pitch, designate si, along one of second stack axes 2034.HH)Preferably, S2PI pitch si is related to SIP J pitch 7 by a second stack multiplicative factor, designated s. Second stack multiplicative factor s may be any positive number. Second stack 2024 further includes a second stack second periodic structure (S2P2) 2054 formed together with third layer 2006 and having an S2P2 pitch, designated sri, along another of second stack axes 2034 Preferably,S2P2 pitch sn is related to S1 P2 pitch n by second stack multiplicative factor s. It is appreciated that second stack multiplicative factor s relating S2P2 pitch sn to SI P2 pitch P has the same value as second stack multiplicative factor s relating S2P1 pitch s7 to S I PI pitch 7 In an embodiment of the present invention, the value of s is l and thus S2P1 pitch s7 is identical to SIP ! pitch 7 and S2P2 pitch sn is identical to S1P2 pitch n

[0281] it is appreciated that S2PI 2052 and S2P2 2054 at least partially overlie one another, and thus a second stack moire pattern 2060 is visible upon imaging second stack 2024. As is known in the art, second stack moire pattern 2060 is characterized by a pitch ¾, which is a function of second stack multiplicative factor q, pitch 7 and pitch n, as shown i equation 45:(¾. «>Preferably, second stack 2024 does not inc!ude periodic structures formed together with second layer 2004 or fourth layer 2008 which affect moire pattern 2060. However, second stack 2024 may include periodic structures formed together with second layer"2004 or fourth layer 2008 which do not affect moire pattern 2060, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to second stack axes 2034 or periodic structures having a pitch size that does not affect moire pattern 2060.

[0282] As seen particularly in Fig 20D, third stack 2026 includes a third stack first periodic structure {S3? I) 2062 formed together with first layer 2002 and having an S3P1 pitch, designated ft, along one of third stack axes 2036. Preferably, S3P1 pitch n is related to SI PI pitch by a third stack multiplicative factor, designated t Third stack multiplicative factor t may he any positiv!Ofnumber. Third stack 2026 further includes a third stack second periodic structure (53P2) 2064 formed together with fourth layer 2008 and having an S3P2 pitch, designated i . along another of third stack axes 2036, Preferably, S3P2 pitch tn is related to S1 P2 pitch 2 by third stack multiplicative factor t It is appreciated that third stack multiplicative factor t relating S3P2 pitch tn to S1P2 pitch n has the same value as third stack multiplicative factor t relating S3PI pitch P to SI PI pitch T. In an embodiment of the present invention, the value of t is 1 and thus S3P1 pitch P is identical to SIP! pitch 7 and S3P2 pitch tn is identical to S1P2 pitch n.

[0283] It is appreciated that S3 PI 2062 and S3P2 2064 at least partially overlie one another, and thus a third stack moire pattern 2070 is visible upon imaging third stack 2026. As is known in the art, third stac moire pattern 2070 is characterized by a pitch is, which is a function of third stack multiplicative factor t. pitch T and pitch P, as shown in equation 46:<¾ «>Preferably, third stack 2026 does not include periodic structures formed together with second layer 2004 or thir layer 2006 which affect oire pattern 2070. However, third stack 2026 may include periodic structures formed together with second layer 2004 or third layer 2006 which do not affect moire pattern 2070, such as periodic structures which are periodic in a plane parallel to the x-y plane along an"axis that is perpendicular to third stack axes 2036 or periodic structures having a pitch size that does not affect moire pattern 2070

[0284] Misregistration between any two of layers 2004, 2006 and 200$ is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation of Milpitas, CA, USA. Pitches P, si, sn, P and tn need not be optically resolvable by the misregistration metrology tool used to generate an image of target 2000. However, it is preferabl!()?.that each of pitches h, is and ¾ is optically resolvable by the misregistration metrology too! used to generate an image of target 2000.[00285) Reference is now made to Fig. 21 A, which is a simplified flowchart illustrating a preferred method of calculating misregistration using a multilayered moire target 2100 including a first layer 2102, such as a target 1900 (Figs. 19A - 19D) including first layer 1902 or target 2000 (Figs. 20A - 20D) including first layer 2002, in a direction parallel to either the x or the y directio between a second, a third and a fourth layer 2104, 2106 and 2108, such as layers 1904, 1906 and 1908 (Figs. 19A - 190} or 2004, 2006 and 2008 (Figs. 20A -· 200) of a multilayered semiconductor device wafer formed with target 2100. Reference is further made to Figs. 2 I B & 21C, which are simplified pictorial illustrations of first and second embodiments of a portion of the method of Fig. 21 A, respectively.

[0286] While it is appreciated that when utilizing target 2000 (Figs. 20A - 20D) the method described with reference to Figs. 21 A - 21 C may be performed only once to calculate misregistration in either the x or the y direction, typically, the method described in Figs 21 A ~ 21C will be performed twice, to calculate misregistration in each of the x and y directions. It is also appreciated that when utilizing target 1900 (Figs. 19 A - 19D) misregistration may be calculated only i the one direction to which first, second and third stack axes 1 32, 1934 and 1936 are parallel.[002871 As seen at a first step 2109, a direction in which to measure misregistration is selected. When using target 1900 in the method of Figs. 2! A & 21 B, the direction in which to measure misregistration is automatically selected to be the direction to which first, second and third stack axes 1932, 1934 an 1936 are parallel. When using target 2000 in the metho ofFigs 2IA & 2 IB, the structures of quadrants 2014 and 2018 are utilized to measure misregistration in a direction parallel to the x-axis, and the structures of quadrants 2012 and 2016 to measure misregistration in a direction parallel to the y-axis.[002881 Preferably, at a next step 1 10, an image of target 2100 is generated using an imaging misregistration metrology tool having adjustable polarization,wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool Is an Archer™ 700, commercially availabl from KLA Corporation, of Milpitas, CA, USA. It is noted that pitches K*3, qx, q¼ Oϊ, n, % n, si. sn, t and tn need not be optically resolvable by the misregistration metrology tool used to generate the image of target 2100. However, it is preferable that each of pitches :¾i , ¾,y, ¾ and is is optically resolvable by the misregistration metrology tool used to generate the image of target 2100.

[0289] In a next step 2111 , and as seen in Figs. 21B & 2IC, first, second and third regions of interest 2112, 21 14 and 21 10 are selected for each of respective first, second and third stacks 212:2, 2124 and 2126, such as first, second and third stacks1922, 1924 and 1926 (Figs. 19A - 19D) or first, second and third stacks 2022, 2024 and 2026 (Figs. 20A - 20D), in the quadrants selected in step 2109. It is appreciated, as seen in the illustrated embodiments of'Figs. 2 IB & 21 C, that while first, second and third regions of interest 21. 1.2, 21 14 and 21 16 preferably lie entirely within each of respective first, second and third stacks 2122, 2124 and2126, as illustrated for first regio of interest 21 ! 2, which lies completely within first stack 2122, first, second and third regions of interest 2112»2114 and 21 16 may extend beyond respective first, second and third stacks 2122, 2124 and 2126, as illustrated for regions of interest 2 ! 14 and 21 16, which extend beyond respective second and third stacks 2124 and 2126, It is farther appreciated that regions of interest 21 12, 21 14 and 2116 shown in Fig. 21 B & 21C are representative regions of interest, and that other suitable regions of interest may he chosen at step 2 i P .

[0290] I a next step 2131, and as seen in Figs. 2,1 B<& 21C, a location of a point of symmetry 2132 between all instances of first region of interest 21 12 selected in step 21 1 1 is calculated. In a next step 2133, and as seen in Figs. 21.B & 21C, a location of a point of symmetry 2134 between all instances of second region of interest 21 14 selected in ste 21 1 1 is calculated, in a next step 2135, and as seen in Figs. 21 B & 21 C, a location of a point of symmetry 136 between all instances of third region of interest 21 16 selected in step 21 1 1 is calculated.

[0291] At a next step 2137, a distance in the direction selected at step 2109 is calculated between the location of point of symmetry 2132 of first region or regions of interest 2112 identified at step 2131 and the location of point of symmetry 2134 of second region or regions of interest 2114 identified at step 2133 The distance found at step 2137 is divided by a gain »¾, which for target1900 is a function of pitch x and pitch , as shown in equation 47a;and lor target 2000 is a function of pitch t and pitch n, as shown hi equation 47b:and the result is reported as the misregistration between second and third layers2104 arid 2106 in the direction selected at step 2109. it is appreciated that in additio to the distance calculated at step 2137, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative l akes of pitch x and pitch or pitch 7 and pitch n, as well as which of layers 2104 and 2106 is to be adj usted.

[0292] At a next step 2139, a distance in the direction selected at step 21.09 is calculated between the location of point of symmetry’ 2134 of second region or regions of interest 21 14 identified at step 2133 and the location of point of symmetry 2136 of third region or regions of interest 21 16 identified at step 2135. The distance found at step 2139 is divided by a gain fe, which for target 1900 is a function of pitch X an pitch 3, as shown in equation 48a:!J - fe¾) <¾· «*> and for target 2000 is a function of pitch 7 and pitch n, as shown in equation 48b:(Eq. 48b)505aad the res tilt is reported as the misregistration between third and fourth layers 2106 and 2108 in the direction selected at step 109 it is appreciated that in addition to the distance calculated at step 2139, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch s and pitch 2 or pitch 7 and pitch n, as well as which of layers 2106 and 2108 is to be adjusted.[002931 At a nest step 2141 , a distance in the direction selected at step 2109 is calculated between the location of point of symmetry 2132 of first region or regions of interest 21 12 identified at step 2131 and die location of point of symmetry 2136 of third region or regions of interest 21 16 identified at step 2135.The distance found at step 141 is divided by a gain ¾ which for target 1900 is a function of pitch k and pitch a, as shown in equation 49a:¾ = fc¾)<Eo-4<« and for target 2000 is a function of pitch and pitc n, as shown in equation 49b; ¾ - (-¾) CEO. 49b) and the result is reported as the misregistration between second and fourth layers 2104 and 2108 in the direction selected at step 2109. It is appreciated that in addition to the distance calculated at step 2141, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitch x and pitch 3 or pitch 7 and pitch n, as well as which of layers 2104 aad 2108 is to be adjusted.100294] Preferably, in the embodiment described hereinabove wherein structures show» as being formed together with second and third layers 104 and 106 are all formed together with layer 2104, the method described hereinabove with reference to Figs. 21 A - 2 ID proceeds to calculate and report a difference between the misregistration value reported at step 2139 and the misregistration value reported at step 2141. The difference between die misregistration values reportedat steps 2 ! 39 and 2141 is useful in the calibration of the misregistration metrology tool used in the method of Figs. 21 A - 2 ID,[00295) Additionally, in the embodiment described hereinabove wherein structures shown as being formed together with second mi fourth lay ers 2104 and 2108 are all formed together with layer 2104, the method described hereinabove with reference to Figs. 21 A - 21 D proceeds to calculate and report a difference between the misregistration value reported at step 2137 and the misregistration value reported at step 2139. The difference between the misregistration values reported at steps 2137 and 2139 is useful in the calibration of the misregistration metrology tool used in the method of Figs. 21 A - 2 ID. j (K)296| Furthermore, in the embodiment described hereinabove wherein structures shown as being formed together with third and fourth layers 2106 and 2108 are all formed together with layer 2106, the method described hereinabove with reference to Figs. 21 A ~ 21 D proceeds to calculate and report a difference between the misregistration value reported at step 2137 and the misregistration value reported at step 2141. The difference between the misregistration values reported at steps 2137 and 2141 is useful in the calibration of the misregistration metrology tool used in the method of Figs. 21A-21.Ό.[0O2971 It is appreciated that i an embodiment Of the present invention wherein layer 2108 lies below layer 2106, relevant portions of the method described hereinabove with reference to Figs. 2IA --- 21C may be performed using only layers 2102, 2104 and 2108, prior to the formation of layer 2106.

[0298] Reference is now made to Figs. 22A - 22E, which are simplified illustrations of another embodiment of a multi-layered moire target 2200 of the present invention. Figs. 22A - 22E include illustrations in three different dimensions, indicated by x-, y- and z-axes, foe three dimensions being referred to hereinafter as an x~y plane, an x-z plane an a y~z plane, respectively. It is note that Fig. 22A generally illustrates the x-y plane, while Figs 228, 22C, 22D an 22E illustrate planes parallel to the x-z plane.Hi?

[0299] Target 2200 is preferably formed on a semiconductor device wafer on whielvare preferably formed at least a first layer 2202, a second layer 2204, a third layer 2206 and a fourth layer 2208 It is appreciated that each of first layer 2202, second layer 2204, third layer 2206 and fourth layer 2208 defines a generally planar surface parallel to the x-y plane. First, second, third and fourth layers 2202,2204, 2206 and 2208 may be adjacent layers but need not be. Preferably, any material between first, second, third and fourth layers 2202, 2204, 2206 and 2208 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 22A - 22E, first layer 2202 lies below second, third and fourth layers 2204, 2206 and 2208, second layer 2204 lies below third and fourth layers2206 and 2208, and fourth layer 2208 lies above first, second and third layers 2202, 2204 and 2206 It is appreciated, however, that layers 2202, 204, 2206 and 2208 may be arranged hi any suitable order along the z-axis with respect to one another.

[0300] Additionally, in an embodiment of the present invention, structures shown as being formed together with first and third layers 2202 and 2206 ma ail be formed together with layer 2202. In such an embodiment, no portion of target 2200 is formed together with layer 2206. Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs 24A ~ 24D. Additionally, tn another embodiment of the present invention, structures shown as being formed together with first and fourth layers 2202 and 2208 may all be formed together with layer 2202. In such an embodiment, no portion of target 2200 is forme together with layer 2208. Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 24A - 24D. Additionally, in another embodiment of the present invention, structures shown as being formed together with second and fourth layers 2204 and 2208 may all be formed together with layer 2204. In such an embodiment, no portion of target 2200 is formed together with layer 2208. Such an embodiment is particularly useful for cal ibration, as described hereinbelow with reference to Figs. 24A-24D.

[0301] it is appreciated that Figs. 22A - 22E illustrate one possible layout of target 2200, and that in other embodiments of the present invention, target 2200may include additional structures. For example, as described hereiubelow with reference to Figs. 23 A - 23E & 34 - 39»a suitable target may include multiple instances of the structures shown in Figs. 22Ά - 22E, and those multiple instances may be arranged in various ways.5

[0302] Preferably, target 2200 includes a first stack 2222 of periodic structures, asecond stack 2224 of periodic stmctures, a third stack 2226 of periodic structures and a fourth stack 2228 of periodic structures. Each of first stac 2222, second stack 2224, third stack 2226 and fourth stack 2228 includes one or more periodic Structures, each periodic structure having a pitch. Preferably, none of first stack10 2222, second stack 2224, third stack 2226; an fourth stack 2228 overlap with one another.[003031 It is appreciated that although in Figs. 22 A - 22E, each of the periodic structures of first stack 2222, second slack 2224, third stack 2226 and fourth stack 2228 are shown as being formed of a plurality of lines and spaces, in other15 embodiments of the invention, the periodic stmctures of first stack 2222, second stack 2224, thir stack 2226 and fourth stack 2228 ma be formed of any suitable periodic features. It is further appreciated that the periodic features forming" die periodic structures included in first stack 2222, second stack 2224, third stack 2226 and fourth stack 2228 may be formed of sub-structures. The pitches of each20 of the periodic structures of first stack 2222, second stack 2224, third stack 2226 and fourth stack 2228 are preferably between .10 nm ~ 3000 nm, and more preferably between 200 nm - 800 n .

[0304] .4 first x-z plane 2231 intersects first stack 2222 A plurality of first axes2232 lie withi first x-z plane 2231 and are parallel to the x-axis. A second x-z25 plane 2233 intersects second stack 2224. A plurality of second axes 2234 lie within second x-z plane 2233 and are parallel to the x-axis. A third x-z plane 2235 intersects third stack 2226 A plurality of third axes 2236 lie within third x-z plane 2235 and are parallel to the x-axis. A fourth x-z plane 2237 intersects fourth stack 2228. A plurality of fourth axes 2238 lie within fourth x-z plane 2237 and areBO parallel to the x-axis.

[0305] As seen particularly i Fig. 22B, in a preferred embodiment of the present invention, first stack 2222 includes a first stack first periodic structure (SIP!) .2:242 formed together with first layer 2202 and having an S1P1 pitch, designated n, along one of first stack axes 2232. Preferably, first stack 2222 further includes a first stack second periodic structure (S1P2) 2244 formed together with second layer 220 and having an S1P2 pitch, designated t), along another of first stack axes 2232.

[0306] It is appreciated that SI Pi 2242 and S1P2 2244 at least partially overlie one another, and thus a first stack moire pattern 2250 is visible upon imaging first stack 2222. As is known in the art, first stack mo re pattern 2250 is characterized by a pitch which is a function of pitches n and e, as shown in equation 5ft;Preferably, first stack 2222 does not Include periodic structures formed together with third layer 2206 or fourth layer 2208 which affect moire patern 2250, However, first stack 2222 may include periodic structures formed together with third layer 2206 or fourth layer 2208 which do not affect moire pattern 2250, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 2250.

[0307] in another embodiment of the present invention, first stack 2222 includes only one of periodic structures 2242 and 2244, and no moire pattern 2250 is visible upon imaging first stack 2222.

[0308] As seen particularly in Fig. 22C, in a preferred embodiment of the present invention, second stack 2224 includes a second stack first periodic structure (S2P1) 2252 formed together with first layer 2202 and having an S2P1 pitch, designated 3, along one of second stack axes 2234 Preferably, second stack 2224 farther includes a second stack second periodic structure (S2P2) 2254 formed together with secon layer 2204 and having an S2P2 pitch, designated 7, along another of second stack axes 2234. no100309} It is appreciated that S2PI 2252 aid S2P2 2254 at least partially overlie one another, and tluis a second stack moire pattern 2260 is visible upon imaging second stack 2224. As is known in the art, second stack moire pattern 2260 is characterized by a pitch h, which is a function of pitch 5 and pitc i, as shown in equation 51 :Preferably, second stack 2224 does not include periodic structures formed together with third layer 2206 or fourth layer 2208 which affect moire pattern 2:260, However, second stack 2224 may include periodic structures formed together wit third layer 2206 or fourth layer 2208 which do not affect moire pattern 2260, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 2260.

[0310] As seen particularl in Fig. 22D, in a preferred embodiment of the present invention, third stack 2226 includes a third stack first periodic structure (S3P!)2262 formed together with second layer 2204 and having an S3 1 pitch, designated u?, along one of third stack axes 2236. Preferably, S3PI pitch iff is related to S2P2 pitch *? by a third stack multiplicative factor, designated Third stack multiplicative factor u may be any positive number. Preferahly, third stack 2226 further includes a third stack second periodic structure (S3P2) 2264 formed together with third layer 22(16 and having an S3P2 pitch, designated ID, along another of third stack axes 2236. Preferably, S3P2 pitch UP is related to S2P1 pitch 3 b third stack multiplicative factor u. It is appreciated that third stack multiplicative factor u relating S3P2 pitch lO to S2F1 pitch D has the same value as third stack multiplicative factor u relating S3P 1 pitch u? to S2P2 pitc Ϊ In an embodiment of the present invention, the value of u is 1 and thus S3P1 pitch u? is identical to S2P2 pitch b and S3F2 pitch u3 is identical to S2P1 pitch 3.[0031 } it is appreciated that S3PI 2262 and S3P2 2264 at least partially overlie one another, and thus a third stack moire partem 2270 is visible upon Imaging rnthird stack 2226 As is known in the art, third stack oire pattern 2270 is Characterised by a pitch y¾, which is a function of thir stack multiplicative factor u, pitch 3 and pilch 7, as shown in equation 52:Preferably, third stack 2226 does not include periodic structures formed together with first layer 2202 or fourth layer 2208 which affect moire pattern 2270 However, third stack 2226 may include periodic structures formed together with first layer 2202 or fourth layer 2208 which do not affect rnoire pattern 2270, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moird pattern 2270

[0312] As seen particularly in Fig 22E, In a preferred embodiment of the present invention, fourth stack 2228 includes a fourth stack first periodic structure (S4P ! } 2272 formed together with third layer 2206 and having an S4P! pitch, designated v3, along one of fourth stack axes 2238 Preferably. S4P1 pitch vs is related to S2P1 pitch 3 by a fourth stack multiplicative factor, designated v Fourth stack multiplicative factor v may he any positi ve number. Preferably, fourth stack 2228 further includes a fourth stack second periodic structure (S4P2) 2274 forme together with fourth layer 220 and having an S4P2 pitch, designated v*?, along another of fourth stac axes 2238. Preferably, S4P2 pitch v7 is related to S2P2 pitch 7 by fourth stack multiplicative factor v. It is appreciated that fourth stack multiplicative factor v relating S4P2 pitch v7 to S2P2 pitch 7 has the same value as fourth stack multiplicative factor v relating S4P1 pitch V3 to S2P1 pitch 3. In an embodiment of the present invention, the value of v is I and thus S4P ! pitch vp is identical to S2P1 pitch 3 and S4P2 pitch vb is identical to S2P2 pitch ?.

[0313] It is appreciated that S4P1 2272 and S4P2 2274 at least partially overlie one another, and thus a fourth stack moire pattern 2280 is visible upon imaging fourth stack 2228. As is known in the art, fourth stack nioitd pattern 2280 is characterized by a pitch % which is a function of fourth stack multiplicative factor v, pitch 3 and pitch 7, as shown in equation 53:Preferably, fourth stack 2228 does not include periodic structures formed together with first layer 2202 or second layer 2204 which affect moire pattern 2280. However, fourth stack 2228 may include periodic structures formed together with first layer 2202 or second layer 2204 which do not affect moire pattern 2280, such as periodic structures which are periodic along an axis parallel to: the y-axis or periodic structures having a pitch size that does not affect moird pattern 2280

[0031] Misregistration between any two of layers 2202, 2204, 2206 and 2208 is preferably measured using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. As example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. Pitches n, o, 3,os, u \ and vb need not be optically resolvable by the misregistration metrology tool used to generate an image of target 220(1. However, it is preferable that each of pitches 'i,¾ and y is optically resolvable by the misregistration metrology tool used to generate an image of target 2200.

[0315] Reference is now made to Figs, 23 A - 23E, which are simplified i llustrations of another embodiment of a multi-layered moire target 2300 of the present invention. Figs 23A ~ 23E include illustrations i three different dimensions, indicated by x~, y- and / .-axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and a y- plane, respectively. It is noted that Fig. 23 A generally illustrates the x-y plane, while Figs, 23B, 23C, 23D and 23E illustrate planes parallel to the x-st plane.[0031(5] It is noted that target 2300 is one example of an alternative layout of target 2200, described hereinabove with reference to Figs. 22A - 22R, and that additional layouts are described hereinbelow with reference to Figs. 34 - 39 Target 2300 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 2302, a second layer 2304, a third layer 2306 and a fourth layer 2308. It Is appreciated that each of first layer 2302, second mlayer 2304, third layer 2306 and fourth layer 2308 defines a generally planar surface parallel to the x-y plane. First, second, third and fourth layers 2302, 2304, 2306 and 2308 may be adjacent layers but need not be. Preferably, any material between first, second, third an fourth layers 2302, 2304, 2306 and 2308 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 23A ~ 23 E, first layer 2302 lies below second, third raid fourth Sayers 2304, 2306 and 2308, second layer 2304 lies below third and fourth layers 2306 and 2308, and fourth layer 2308 lies above first, second and third layers 2302, 2304 and 2306. It is appreciated, however, that layers 2302, 2304, 2306 and 2308 may be arranged in any suitable order along the z~axis with respect to one another.

[0317] Additionally, in an embodiment of the present invention, structures shown as being formed together with first and third layers 2302 and 2306 may all be formed together with layer 2302. In such an embodiment, no portion of target 2300 is formed together with layer 2306. Such an embodiment is particularly use for calibration, as described here below with reference toFigs, 24A-24D.Additionally, in another embodiment of the present invention, structures shown as being formed together with first and fourth layers 2302 and 2308 may all be formed together with layer 2302. In such an embodiment, no portion of target 2300 is formed together with layer 2308. Such an embodiment is particularly useful for calibration, as described hereinbeiow with reference to Figs. 24A ~ 24D.Additionally, hi another embodiment of the present invention, structures shown as being formed together with second and fourth layers 2304 and 2308 may all be formed together w ith layer 2304. In such an embodiment, no portion of target 2300 is formed together with layer 2308, Such an embodiment is particularly useful for calibration, as described hereinbeiow with reference to Figs. 24A - 24D.[003181 As seen particularly in Fig. 23 A, target 2300 includes four target quadran ts2312, 2314, 2316 and 2318. In the embodiment shown in Fig. 23 A, the rotational orientation in foe x-y plane of each of target quadrants 2312, 2314, 2316 and 2318 preferably differs from th rotational orientation in the x-y plane of each of the other target quadrants 2312, 2314, 2316 and 2318 by an integer multiple of 90AAdditionally, target 2300 preferably is characterized by rotational symmetry ineither the x-direction or the y-directiou or both. In a preferred embodiment of the present invention, target 2300 is designed such that when in a state of registration, the entirety o f target 2300 is characterized by a single point of symmetry in the x- direction and a single point of symmetry in the y-direction. However, even in such an embodiment, when in a state of misregistration, various elements of target 2300 wilt be characterized by unique points of symmetry.100319] Each of target quadrants 2312, 2314, 2316 and 231.8 includes a Erst stack2322 of periodic structures, a second stack 2324 of periodic structures, a third stack 2326 of periodic structures and; a fourth shack 2328 of periodic structures, Each of first stack 2322, second stack 2324, third stack 2326 and fourth stack 2328 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack 2322, second stack 2324, third stack 2326 and fourth stack 2328 overlap with one another. In Figs, 23A - 23E, first stack 2322 is illustrated as lying closer to the center of target 2300 than second stack 2324, third stack 2326 and fourth stack 2328, second stack 2324 is illustrated as lying closer to the center of target 2300 than third stack 2326 and fourth stack 2328, third stack 2326 is illustrated as lying closer to the edge of target 2300 than first stack 2322 and second stack 2324, and fourth stack 2328 is illustrated as lying closer to the edge of target 2300 than third stack 2326. However, first stack 2322, second stack 2324, third stack 2326 and fourth stack 2328 may be arranged in any suitable arrangement relative to the x~y plane with respect to one another.

[0320] It is appreciated that although in Figs. 23 A ~ 23.E, each of th periodic structures of first stack 2322, second stack 2324, third stack 2326 and fourth stack 2328 are shown as being formed of a plurality of lines and spaces, in other embodiments of the invention, the periodic structures of first stack 2322, second stack 2324, third stack 2326 and fourth stack 2328 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 2322, second stack 2324, third stack 2326 and fourth stack 2328 may be formed of sub-structures. The pitches of each of the periodic structures of first stack 2322, second stack 2324, third stack 2326and fourth stack 2328 are preferably between 10 »m ·· 3000 nm, and more preferably between 200 m - 800 n ,

[0321] As seen in Fig. 23 A, in each of quadrants 2312, 2314, 23 6 and 2318, a first plane 2331 , intersecting first stack 2322 and including a plurality of first axes 2332 lying therein, a second plane 2333, intersecting second stack 2324 an including a plurality of second axes 2334 lying therein, a third plane 2335, intersecting third stack 2326 and including a plurality of third axes 2336 lying therein, and a fourth plane 2337, intersecting fourth stack 2328 and including a plurality of fourth axes 2338 lying therein, are defined. Each of first plane 2331 , second plane 2333, third plane 2335 and fourth plane 2337 are either a x-z. plane or a y~x plane, and first axes 2332, secon axes 2334, third axes 2336 and. fourth axes 2338 are parallel to the respective x-axis or y-axis, depending on the orientation of first stack 2322, second stack 2324, third stack 2326 and fourth stack 2328 within each of quadrants 2312, 2314, 231.6 and 2318 ft is appreciated that in each of quadrants 2312, 2314, 2316 and 2318, first plane 2331 , second plane 2333, third plane 2335 and fourth plane 2337 are ah parallel to one another.100322 ] As seen particularly in Fig. 23B, in a preferred embodiment of the present invention, first stack 2322 includes a first stack first periodic structure (Si Pi) 2342 formed together with first layer 2302 and having an SIP l pitch, designated s, along one of first stack axes 2332. Preferably, first stac 2322 further includes a first stack second periodic structure (S 1 P2) 2344 formed together with second layer 2304 and having an S1F2 pitch, designated 3, along another of first stack axes 2332.100323] It is appreciated that S1F1 2342 and S1P22344 at least partially overlie one another, and thus a first stack moire pattern 2350 is visible upon imaging first stack 2322 As is known in the art, first stack moire pattern 2350 is characterized by a pitch £·., which is a function of pitches » and 3, as shown in equation 54: axin = - (Eq. 54}js-sjPreferably, first stack 2322 does not include periodic structures formed together with third layer 2306 or fourth layer 2308 which affect moire pattern 2350. However, first stack 2322 may include periodic structures formed together with third layer 2306 or fourth layer 2308 which do not affect inoird pattern 2350, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to first stack axes 2332 or periodic structures having a pitch size that does not affect moire pattern 2350.

[0324] In another embodiment of the present in vention, first stack 2322 includes only one of periodicstructures 2342 and 2344, and no moire pattern 2350 is visible upon imaging first stack 2322.

[0325] As seen particularly in Fig. 23C, in a preferred embodimen t of the present invention, second stack 2324 includes a second stack first periodic structure (S2PI) 2352 formed together with first layer 2302 and having an S2P1 pitch, designated $?, along one of second stack axes 2334. Preferably, second stack 2324 further includes a second stack second periodic structure (S2P2) 2354 formed together with second layer 2304 and having an S2P2 pitch, designated s, along another of second stack axes 2334! 00326] It is appreciated that S2F1 2352 and S2P2 2354 at least partially overlie one another, and thus a second stack moire pattern 2360 is visible upon imaging second stack 2324. As is known in the art, second stack moire pattern 2360 is characterized by a pitch o¾which is a function of pitch y and pitch s, as shown In equation 55:¾ = ]¾ <ft 55)Preferably, second stack 2324 does not include periodic structures formed together with third layer 2306 o fourth layer 2308 which affect moire pattern2360 However, second stack 2324 may include periodic structures formed together with third layer 2306 or fourth layer 2308 which do not affect moire pattern 2360, such as periodic structures which are periodic in a plane parallel to inthe x-y plane along an axis that is perpendicular to second stack axes 2334 or periodic structures having a pitch size that does not affect moire pattern 2360[0032TJ As seen particularly in Fig. 23 D, in a preferred embodiment: of the present:invention, third stack. 2326 includes a third snack first periodic structure (S3P1) 2362 formed together with second layer 2304 and having an S3P1 pitch, designated ws, along one of third stack axes 2336. Preferably, S3PI pitch ws is related to S2P2 pitch s by a third stack multiplicative factor, designated w. Third stack multiplicative factor w may be any positive number. Preferably, third stack 2326 further includes a third stack second: periodic structure (S3P2) 2364 formed together with third layer 2306 and having an S3P2 pitch, designated w$?, along another of third stack axes 2336. Preferably, S3P2 pitch ws? is related to S2P1 pitch s? by third stack multiplicative factor w. It is appreciated that third stack multiplicative factor w relating S3P2 pitch ws? to S2P1 pitch s? has the same value as third stack multiplicative factor w relating S3P i pitch ws to S2P2 pitch s. In an embodiment of the present invention, the value of w is I and tbits S3PI pitc ws is identical to S2P2 pitch s and S3P2 pitch ws? is identical to S2PI pitch t?.100328 j It is appreciated that S3P1 2362 and S3P2 2364 at least partially overlie one another, and thus a third stack moire pattern 2370 is visible upon imaging third stack 2326. As is known in the art, third stack moire pattern 2370 is characterized by a pitch ¾, which is a function of third stack multiplicative factor w, pitch i? and pitch s, as shown in equation 56:Preferably, third stack 2326 does not include periodic structures formed together with first layer 2302 or fourth: layer 2308 which affect moire pattern 2370. However, third stack 2326 may include periodic structures formed together with first layer 2302 or fourth layer 2308 which do not affect moire pattern 2370, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to third stack axes 2336 or periodic structures having a pitch size that does not affect mo re pattern 2370. m100329 } As seen particularly in Fig. 23 Bsn a preferred embodiment of the present invention, fourth stack 2328 includes a fourth stack first periodic structure (S4P 1) 2372 formed together with third layer 2306 and having an S4P i pitch, designated x3f, along one of fourth stack axes 2338. Preferably, S4FI pitch xs is related to S2P1 pitch t by a fourth stack multiplicative factor, designated x. Fourth stack multiplicative factor x may be any positive number. Preferably, fourth stack 2328 further includes a fourth stack second periodic structure (S4P2) 2374 formed together with fourth layer 2308 and having an S4P2 pitch, designated xs, along another of fourth stack axes 2338. Preferably, S4P2 pitch xs is related to S2P2 pitch D by fourth stack multiplicative factor x. It is appreciated that fourth stack multiplicative factor x relating S4P2 pitch xs to S2P2 pitch s has the same value as fourth stack multiplicative factor x relating S4Pi pitch x$? to S2P1 pitch si. In an embodiment of the present invention, the value of x is 1 and thus S4P1 pitch xs is identical to S2P1 pitch v and S4P2 pitch xs is identical to S2P2 pitch 5 [00330} It is appreciated that S4PI 2372 and S4P2 2374 at least partiall overlie one another, and thus a fourth stack oire pattern 2380 is visible upon imaging fourth stack 2328. As is known in the art, fourth stack moire pattern 2380 is characterized by a pitch 04 which is a function of fourth stack multiplicative factor x, pitch y and pitch S, as shown in equation 57:Preferably, fourth stack 2328 does not include periodic structures formed together with first layer 2302 or second layer 2304 which affect moire pattern 2380 However, fourth stack 2328 may include periodic structures forme together with first layer 2302 or second layer 2304 which do not affect moire pattern 2380, such as periodic structures which are periodic i a plane parallel to the x-y plane along an axis that is perpendicular to fourth stack axes 2338 or periodic structures having a pitch size that does not affect moire pattern 2380,[00331} Misregistration between any two of layers 2302. 2304. 2306 and 2308 is preferably measured «sing an imagin misregistration metrology tool having madjustable polarization, wavelength and numerical aperture setings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. Pitches s, 2, jf, s, wit, wa, i? and xs need not be optically resolvable by the misregistration 5 metrology tool used to generate an image of target 2300. Howe ver, it is preferablethat each of pitches O , *¾»03 and ¾ is optically resolvable by the misregistration metrology tool used to generate an image of target 2300.

[0332] Reference is now made to Figs 24A & 24B, which together are a simplified flowchart illustrating a preferred method of calculating isregistration, 10 using a multi-layered moire target 2400, such as a target 2200 (Figs. 22A - 22E)o.r target 2300 (Figs. 23.4 - 23E), in a direction parallel to either the x or the y direction between a first, a second, a third and a fourth layer 2402, 2404, 406 and 240S, such as layers 2202, 2204, 2206 and 220$ (Figs. 22A ~ 22E) or 2302, 2304, 2306 and 2308 (Figs. 23A - 23E) of a multilayered semiconductor device wafer is formed with target 2400. Reference is further made to Figs, 24C<& 240, which are simplified pictorial illustrations of first an secon embodiments of a portion of the method of Figs, 24 A & 24B, respectively.

[0333] While it is appreciated that when utilizing target 2300 (Figs. 23A - 23 E) the method described with reference to Figs. 24A - 24D may be performed only 20 once to calculate misregistration i either the x or the y direction, typically, the method described in Figs, 24A - 24D will be performed twice, to calculate misregistration in each of the x an y directions. It is also appreciated that when utilizing target.2200 (Figs. 22 A - 22E) misregistration may he calculated only in the one direction to which first second, third stack and fourth stack axes 2232, 25 2234, 2236 and 2238 are parallel.[003341 As seen at a first step 2409, a direction In which to measure misregistration is selected. When using target 2200 in the method of Figs. 24 A & 24B, the direction in which to measure misregistration is automatically selected to be the direction to which first, second, third and fourth stack axes 2232, 2234, 2236 and BO 2238 are parallel When using target 2300 in the method of Figs. 24 A & 24B, thestructures of quadrants 2 14 and 2318 are u tilized to measure misregistration in adirection parallel to the x-axis, and the structures of quadrants 2312 and 2316 to measure misregistration in a direction parallel to the y-axis.

[0335] Preferably, at a next step 2410, an image of target 2400 is generated using an imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA. It is noted that pitches n, o5, b, uo, uh, VD, vb, ¾, 5, v, s, w5?, ws, xs? an xs need not be optically resolvable by the misregistration metrology tool used to generate the image of target 2400, However, itis preferable that each of pitches\o ¾, ¾, h,O?and ¾ is optically resolvable by the misregistration metrology tool used to generate the image of target 2400.

[0336] In a next step 241 1, and as seen in Figs. 24C & 24D, first, second, third and fourth regions of interest 2412, 2414, 2416 and 2418 are selected .for each of respective first, second, third and fourth stacks 2422, 2424, 2426 and 2428. such as first, second an third stacks 2222, 2224, 2226 and 2228 (Figs. 22A - 22E) or first, second, third and fourth stacks 2322, 2324, 326 and 2328 (Figs. 23A - 23E), in the quadrants selected in step 2409. It is appreciated, as seen in the illustrated embodiments of Figs. 24C & 24D, that while first, second, third and fourth regions of interest 2412, 2414, 2416 and 2418 preferably lie entirely within each of respective first, second, third and fourth stacks 2422, 2424, 2426 and 2428, as illustrated for first and fourt regions of interest 241.2 and 241.8, which lie completely within respective first and fourth stacks 2422 and 2428, first, second, third and fourth regions of interest 2412, 41 , 2416 and 2418 may extend beyond respective first, second, third and fourth stacks 2422, 2424, 2426 and 2428, as illustrated for regions of interest 2414 and 2416, which extend beyond respective second and third stacks 2424 and 2426. It is further appreciated that regions of interest 241 , 2414, 2416 and 2418 shown in Fig. 24C & 24D are representative regions of interest, and that other suitable regions of interest maybe chosen at step 2411.

[0337] In a next step 2431, and as seen in Figs. 24C & 24D, a location of a point 6f symmetry 2432 between all instances of first region of interest 2412 selected in step 2411 is calculated. In a next ste 2433, and as seen in Figs. 24C & 240, a locatio of a point of symmetry 2434 between all instances of second regio of interest 2414 selected in step 241 1 is calculated. In a next step 2435, and as seen in Figs. 24C Sc 24D, a location of a point of symmetry 2436 between all instances of third region of interest 2416 selected in step 2411 is calculated. In a next step 2437, and as seen in Figs. 24C & 24D, a location of a point of symmetry 2438 between all instances of fourth region of interest 2418 selected in step 2411 is calculated.

[0338] At a next step 2439, a distance in the direction selected at step 2409 is calculated between the location of point of symmetry 2432 of first region or regions of interest 2412 identified at step 2431 and the location of point of symmetry 2434 of second region or regions of interest 2414 identified at step 2433. The distance found at step 2439 is divided by gain ¾, which for target2200 is a function of pitches n, P, 5 and 7, as shown in equation 58a:and for target 2300 is a function of pitches a, 3, 5? and B, as shown in equation 58b:and the result is reported as the misregistration between first and second layers2402 and 2404 in the direction selected at step 2409. It is appreciated that in addition to the distance calculated at step 2439. the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitches n, o, s and 7 or pitches a, å, v and 5, as well as which of!ayers 2402 and 2404 is to be adjusted.

[0339] At a next step 2441, a distance in the direction selected at step 2409 is calculated between the location of point of symmetry 2434 of second region or regions of interest 2414 identified at step 2433 and the location of point ofsymmetry 2436 of third region or regions of interest 241 identified at step 2435. The distance found at step 2441 is divided by a gain ¾. which for target 2200 is a function of pitch 3 and pitch 7, as shown in equati on 59a:and for target 2300 is a function of pitch j? and pi tch s, as shown in equation 59b;¾“ fe¾) (E<I· »» and the result is reported as the misregistration between first and third layers 2402 and 2406 in the direction selected at step 2409. It is appreciated that in addition to the distance calculated at step 2441 , the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitches 3 and 7 or pitches v and s, as well as which of layers 2402 and 2406 is to be adjusted.

[0340] At a next ste 2443, a distance in the direction selected at step 2409 is calculated between the location of point of symmetry·' 2436 of third region or regions of interest 2416 identified at step 2435 and the location of point of symmetry·' 2438 of fourth region or regions of interest 2418 identified at step 2437. The distance found at step 2443 is divided by a gai $3, which for target 2200 is a function of pitch 3 and pitch 7, as shown in equation 60a:and. for target 2300 is a function of pitch v and pitch s, as shown in equation 60b:and the result is reported as the misregistration between second and fourth layers 2404 and 2408 in the direction selected at step 2409. It is appreciated that in addition to die distance calculated at step 2443, the method further calculates an adjustment direction, such as right, left, up or down. The a justment direction is raa function of the relative values of pitches 3 and V or pitches v and as well as which of layers 2404 and 2408 is io be adjusted.

[0341] At a next step 2445, a difference is calculated between the misregistration value reported at step 2439 and the misregistration value reported at step 2443.5 The difference calculated at step 2445 is reported as the misregistration between first and fourth layers 2402 and 2408 in the direction selected at step 2409. it is appreciated that hi addition to the distance calculated at step 2445, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitches h, 3 and V or10 pi tches «, 3, 8 and 3, as well as which of layers 2402 and 24(18 is to be adjusted.

[0342] At a next step 2447, a difference is calculated between the misregistration value reported at step 2439 and the misregistration value reported at step 2441. The difference calculated at step 244? is reported as the misregistration between second and third layers 2404 and 2406 in the direction selected at step 2409. it is15 appreciated that hi addition to the distance calculated at step 2447, the method further calculates an adjustment direction, such as right, left, up or down. The adjus tment direction is a function of the relative values of pi tches n, ¾, 3 and 7 or func tion of pitches a, 3, s? and s as well as which of layers 2404 and 2406 is to be adjusted.20

[0343] At a next step 2449, a difference is calculated between the misregistration value reported at step 2441 and the misregistration value reported at step 2445. Alternatively, at next step 2449, a difference is calculated between the misregistration value reported at step 2447 and the misregistration value reported at step 2443, The difference calculated at step 2449 is reported as the25 misregistration between third and fourth layers 2406 and 2408 in the direction selected at step 2409. It is appreciated that i additio to the distance calculated at step 2449, the method further calculates an adjustment direction, such as right, left, up or down. The adjustment direction is a function of the relative values of pitches n, a, 3 and 7 or pitches 3, 3, 3 and s, as well as which of layers 2406 andBO 2408 Is to be adjusted.100344} Preferably; in the embodiment described hereinabove wherein structures shown as being formed together with first and third layers 2402 and 2406 are ail formed together with layer 2402, the method described hereinabove with reference to Figs. 24 A ~ 24D proceeds to calculate and report a difference between the misregistration value reported at step 2439 and the misregistration value reported at step 2447. The difference between the misregistration values reported at steps 2439 and 2447 is useful ia the calibration of the misregistration metrology tool use in the method of Figs. 24A ··· 24D.[003451 Similarly, in die embodiment described hereinabove wherein structures shown as being formed together with .first and third: layers 2402 and 2406 are all formed together with layer 2402, the method described hereinabove with reference to Figs. 24 A - 24D proceeds to calculate and report a difference between the misregistration value reported at step 2445 and die misregistration value reported at step 2449. The difference between the misregistration values reported at steps 2445 and 2449 is useful in the calibration of the misregistration metrology toot used in the method of Figs. 24 A- 24D,100346] Preferably, in the embodiment described hereinabove wherein structures shown as being formed together with first and fourth layers 2402 and 2408 are all formed together with layer 2402, the method described hereinabove with reference to Figs. 24 A - 24D proceeds to calculate and report a difference between the misregistration value reported at step 2439 and the misregistration value reported at step 2443. The difference between the misregistration values reported at steps 2439 and 2443 is useful in the calibration of the misregistration metrolog tool used in the method of Figs. 24A - 24D.

[0347] Similarly, in the embodiment described hereinabove wherein structures shown as being formed together with first and fourth layers 2402 and 2408 are all formed together with layer 2402, the method described hereinabove with reference to Figs. 24A - 24D proceeds to calculate and report a difference between the misregistration value reported at step 2441 and the misregistration value reported at step 2449. The difference between the misregistration values reportedat steps 2441 and 2449 is useful in the calibration of the misregistration metrology tool used in the method of Figs. 24A --- 24D,(00348 j Preferably, in the embodiment described hereinabove wherein structures shown as being formed together with second and fourth layers 2404 and 2408 are all formed together with layer 2404, the method described hereinabove with reference to Figs. 24A -- 24D proceeds to calculate and report a difference between the misregistration value reported at step 2439 and the misregistratio value reported at step 2445. The difference between the misregistration values reported at steps 2439 and 2445 is usefel in the calibration of the misregistration metrology tool used in the method of Figs. 24A - 24D.

[0349] Similarly, in the embodiment described hereinabove wherein structures shown as being forme together with second and fourth layers 2404 and 2408 are all formed together with layer 2404, the method described hereinabove with reference to Figs. 24A ~ 24D proceeds to calculate and report a difference between the misregistration value reported at step 2447 and the misregistratio value reported at step 2449. The difference between the misregistration values reported at steps 2447 and 2449 is use&i in the calibration of the misregistration metrology tool used in the method of Figs. 24A— 24D.

[0350] Reference is now made to Figs, 25A - 25E, which are simplified illustrations of another embodiment of a multi-layered moire target 2500 of the present invention. Figs. 25A 25E include illustrations in three different dimensions, indicated by x~, y- and z-axes, the three dimensions being referred to hereinafter as an x-y plane, an x-z plane and a y-z plane, respectively. It is noted that Fig 25A generally illustrates foe x-y plane, while Figs 25B, 25C, 25D and 25E illustrate planes parallel to the x z plane.

[0351] Target 2500 is preferably formed on a semiconductor device water on which are preferably formed at least a first layer 2502, a second layer 2504, third layer 2506 and a fourth layer 2508, It is appreciated that each of first layer 2502, second layer 2504, third layer 2506 and fourth layer 2508 defines a generally planar surface parallel to the x-y plane. First, second, third and fourth layers 2502,] ?.62504, 2506 and 2508 may be adjacent layers but need not be. Preferably, any material between first, second, third and fourth layers 2502, 2504, 2506 and 2508 is at least partiall transparent to electromagnetic radiation. In toe embodiment illustrated in Figs. 25A - 25B, first layer 2502 lies below second, third and fourth layers 2504, 2506 and 2508, second layer 2504 lies below third and fourth layers2506 and 2508, and fourth layer 2508 lies above first, second and third layers 2502, 2504 and 2506. It is appreciated, however, that layers 2502, 2504, 2506 and 2508 may be arranged in any suitable order along the 2-axis with respect to one another 521 Additionally, in an embodiment of the present invention, structures show as being formed together with first and third layers 2502 and 2506 may all be formed together with layer 2502 In such a embodiment, no portion of target 2500 is formed together with layer 2506. Such an embodiment is particularl useful for calibration, as described hereinbelow with reference to Figs 27A -27D. Additionally, in another embodiment of the present invention, structures shown as being formed together with first and fourth layers 2502 and 2508 may ail be formed together with layer 2502. In such an embodiment, no portion of target 2500 is formed together with layer 2508. Snch an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 27 A ~ 27D Additionally, in another embodiment of the present invention, structures shown as being formed together with second and fourth layers 2504 and 2508 may all be formed together with layer 2504. In suc an embodiment, no portio of target 2500 is formed together with layer 2508. Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 27 A - 27D. 53] it is appreciated that Figs. 25A - 25E illustrate one possible layout of target 2500, and that in other embodiments of the present invention, target 2500 may include additional structures. For example, as described hereinbelow with reference to Figs. 26A - 26E & 34 - 39, suitable target may include multiple instances of the structure shown in Figs. 25A - 25E, and those multiple instances may be arranged in various ways.100354 } Preferably; target 2500 includes a first stack 2522 of periodic structures, a second stack 2524 of periodic structures, a third stack 2526 of periodic structures and a fourth s ack 2528 of periodic structures. Each of first stack 2522 , second stack 2524, third stack 2526 and fourth stack 2528 includes one or more periodic structures, each periodic structure having a pitch. Preferably, none of first stack2522, second stack 2524, third stack 2526 and fourth stack 2528 overlap with one another.

[0355] It is appreciate that although in Figs. 25A ~ 25E, each of the periodic structures of first stack 2522, secon stack 2524, third stack 2526 and fourth stack 2528 are shown as being formed of a plurality of fines and spaces, in other embodiments of the invention, the periodic structures of first stack 2522, second stack 2524, third stack 2526 an fourth stack 2528 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 2522, second stack 2524, third stack 2526 and fourth stack 2528 may be formed of Sub-structures; The pitches of each of the periodic structures of first stack 2522, second stack 2524, third stack 2526 and fourth stack 2528 are preferably between 10 nm - 3000 run, and more preferably between 200 nm ~ 800 nm.

[0356] A first x-z plane 2531 intersects first stack 2522. A plurality of first axes 2532 tie within first x~z plane 2531 and are parallel to the x-axls. A second x-z plane 2533 intersects second stack 2524. A plurality of second axes 2534 lie within second x-z plane 2533 and are parallel to the x-axis. A third x-z plane 2535 intersects third stack 2526. A plurality of third axes 2536 lie within third x~x plane 2535 and are parallel to the x-axis A fourth x-z plane 2537 intersects fourth stack 2528. A plurality of fourth axes 2538 lie within fourth x-z plane 2537 and are parallel to the x-axis.

[0357] As seen particularly in Fig. 25 B. in a preferred embodiment of the present invention, first stack 2522 includes a first stack first periodic structure (SI Pi ) 2542 formed together with first layer 2502 and having an SIP! pitch, designated 1?, along one of first stack axes 2532. Preferably, first stack 2522 further includes a first stack second periodic structure (S1 P2) 2544 formed together with secondlayer 2504 and ha ving an S1P2 pitch, designated along another of first stack axes 2532.

[0358] It is appreciated that S I P i 2542 and S1P2 2544 at least partially overlie one another, and thus a first stack moire pattern 255 is visible upon imaging first stack 2522. As is know i the art, first stack moir£ pattern 2550 is characterized by a pitch eq, which Is a function of pitches j? and Ί, as shown in equation 61 ;Preferably, firs! stack 2522 does not include periodic structures formed together with third layer 2506 or fourth layer 2508 which affect moire pattern 2550. However, first stack 2522 may include periodic structures formed together with third layer 2506 or fourth layer 2508 which do not affect moire pattern 2250, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 2250.

[0359] in another embodiment of the present invention, first stack 2522 includes only Si PI 2542 and not S1P2 2544, and no moire pattern 2550 is visible upon imaging first stack 2522.100360 j As seen particularly in Fig. 2SC, in a preferred embodiment of the present invention, second stack 2524 includes a second stack first periodic structure (S2P1 ) 2552 formed together with first layer 2502 and having an S2 I pitch, designated rs, along one of second slack axes 2534 Preferably, second stack 2524 does not include periodic structures formed together with any of first, third or fourth layers 2502, 2506 or 2508 which would together with S2P1 2552, produce a moire pattern upon imaging second stack 2524. However, second stack 2524 may include periodic structures formed together with first, third or fourth layers 2502, 2506 or 2508 which do not produce a moire pattern upon imaging second stack 2524, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not produce a moire pattern upon imaging second stack 2524.

[0361] As seen particularly in Fig. 25D in a pre ferred embodiment of the present invention, third stack 2526 includes a third stac first periodic structure (S3PI) .2562 formed together with second layer 2504 and having au S3P.1 pitch, designated a, along one of third stack axes 2536. Preferably, third stack 2526 further includes a third stack second periodic structure (S3P2) 2564 formed together with third layer 2506 and having an S3P2 pitch, designated h, along another of third stack axes 2536.

[0362] It is appreciated that S3P1 2562 and S3P2 2564 at least partially overlie one another, and thus a third stack moke pattern 2570 is visible upon imaging third stack 2526, As is known in the art, third stack moire pattern 2570 is characterized by a pilchwhich is a function of pitch a and pitch as shown in equation 62:Preferably, third Stack 2526 does not include periodic structures formed together with first layer 2502 or fourth layer 2508 which affect moire pattern 2570:.However, third stack 2526 may include periodic structures formed together with first layer 2502 or fourth layer 2508 which do cot affect moire patern 2570, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 2570.

[0363] As seen particularly in Fig. 25 E, in a preferred embodiment of the present invention, fourth stack 2528 includes a fourth stack first periodic structure (S4P 1 ) 2572 formed together with thir layer 2506 and having an S4P1 pitch, designated y along one of fourth stack axes 2538. Preferably, S4P! pitch nή is related to S3P2 pitch n by a fourth stack multiplicative factor, designated y. Fourth stack multiplicative factor y may be any positi ve number. Preferably, fourth stack 2528 further includes a fourth stack second periodic structure (S4P2) 2574 formed together with fourth layer 2508 and having an S4P2 pitch, designated yo, along another of fourth stack axes 2538, Preferably, S4P2 pitch ya is related to S3P! pitch n by fourth stack multiplicative factor y. It is appreciated that fourth stack mmultiplicative factor y relating S4P2 pitch yo to S3PI pitch Q has the same value as fourth stack multiplicative factor y relating S4P1 pitch yp to S3P2 pitch q. In an embodiment of the present invention, tbe value of y is I and thus S4P I pitch *} is identical to S3P2 pitch * and S4P2 pitch ya is identical to S3P1 pitch a.

[0364] It is appreciated that S4P1 2572 and S4P2 2574 at least partially overlie one another, and thus a fourth stack moire pattern 2580 is visible upon imaging fourth stack 2528. As is known in the art, fourth stack moire pattern 258 is characterized by a pitch ¾, which is a function of fourth stack multiplicative factor y, pitch a and pitch ¾ as shown in equation 63;<¾· «>Preferably, fourth stack 25:28 does not include periodic structures formed together with first layer 2502 or secon layer 2504 which affect moire pattern 2580. However, fourth stack 2528 may include periodic structures formed together with first layer 2502 or second layer 2504 which do not affect moire pattern 2580, such as periodic structures which are periodic along an axis parallel to the y-axis or periodic structures having a pitch size that does not affect moire pattern 2580.

[0365] Misregistration between any two of layers 2502, 2504, 2506 and 2508 is preferably measured using m imaging misregistration metrology tool having adjustable polarization, wavelength and numerical aperture settings. An example of a suitable imaging misregistration metrology tool is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA, USA, Pitches p, o, h, ya and yh need not be optically resolvable by the misregistration metrolog tool used to generate an image of target 2500, Howe ver, it is preferable that each of pitches b,, ¾¾ and ¾¾ is optically resolvable by the misregistration metrology tool used to generate an image of target 2500.

[0366] Reference is now made to Figs, 26A - 26E, which are simplifie illustrations of another embodiment of a multi-layered moire target 2600 of the present invention. Figs. 26A - 26E include illustrations in three different dimensions, indicated by x-, y- and x-axes, the three dimensions being referred to nshereinafter as an x-y plane, aa x-z plane and a y-¾ plane, respectively. It is noted that Fig. 26A generally illustrates the x-y plane, while Figs. 26B, 26C, 26D and 26E illustrate planes parallel to the x-z plane.

[0367] It is noted that target 2600 is one example of an alternative layout of target 2500, described hereinabove wit reference to Figs. 2SA - 25E, and that additional layouts are described hereinbelow with reference to Figs, 34 - 39, Target 2600 is preferably formed on a semiconductor device wafer on which are preferably formed at least a first layer 2602, a second layer 2604, a third layer 2606 and a fourth layer 2608, It is appreciated that each of first layer 2602, second layer 2604, third layer 2606 and fourth layer 2608 defines a generally planar surface parallel to the x-y plane. First, second, third and fourth layers 2602, 2604, 2606 and 2608 may be adjacent layers but need not. be. Preferably, any material between first, second, third and fourth layers 2602, 2604, 2606 and 2608 is at least partially transparent to electromagnetic radiation. In the embodiment illustrated in Figs. 26A - 26E, first layer 2602 lies below second, third and fourth layers2604, 2606 and 2608, second layer 2604 lies below third and fourth layers 2606 and 2608, and fourth layer 2608 lies above fust, second and third layers 2602, 2604 and 2606 It is appreciated, however, that layers 2602, 2604, 2606 and 2608 may be arranged in any suitable order along the x-axis with respect to one another.

[0368] Additionally, in an embodiment of the present invention, structures shown as being formed together with fust and third layers 2602 and 2606 may all he forme together wit layer 2602. In such an embodiment, no portion of target 2600 is formed together with layer 2606. Such an embodiment is particularly useful for calibration, as described hereinbelow with reference to Figs. 27A - 27D. Additionally, in another embodiment of the present invention, structures shown as being formed together with first and fourth layers 2602 and 2608 may all be formed together with layer 2602, in such an embodiment, no portion of target 2600 is formed together with layer 2608. Snch an embodiment is particularly useful for calibration, as described herei.nbel.ow with reference to Figs, 27 A - 27D. Additionally, in another embodiment of the present invention, structures shown as being formed together with second and fourth layers 2604 and 2608 may all be mformed together with layer 2604. In such an embodiment, no portion of target 2600 is for together with layer 2608. Such an embodiment is particularly useful for calibration, as described herein below with reference to Figs.27 A - 27D.[00369;} As seen particularly in Fig , 26 A, target 2600 includes four target quadrants 2612, 2614, 2616 and 2618. In the embodiment shown hi Fig, 26A, the rotational orientation in the x-y plane of each of target quadrants 2612, 2614, 616 and 2618 preferably differs from the rotational orientation in the x-y plane of each of the other target quadrants 2612, 2614, 2616 and. 2618 by an integer multiple of 90°, Additionally, target 2600 preferably is characterized by rotational symmetry1in either the x-direetron or the y-direction o both. In a preferred embodiment of the present invention, target 2600 is designed such that when in a state of registration, the entirety of target 2600 is characterized by a single point of symmetry i n the x~ direction and a single point of symmetry m the y-direction. However, even in such an embodiment, when in a state of misregistration, various elements of target 2600 will be characterized by unique points of symmetry.

[0370] Each of target quadrants 2612, 2614, 2 16 and 2 18 Includes a first stack 2622 of periodic structures, a second stack 2624 of periodic structures, a third stack 2626 of periodic structures and a fourth stack 2628 of periodic structures. Each of first stack 2622, second s tack 2624, third stack 2626 and fourt stack 2628 includes one or more periodic structures, each periodic structure having a pitch.Preferably, none of first stack 2622, second stack 2624, third stack 2626 and fourt stack 2628 overlap with one another. In Figs. 26A ~ 26E, first stack 2622 is illustrated as lying closer to the center of target 2600 than second stack 2624, third stack 2626 and fourth stack 2628, second stack 2624 is illustrated as lying closer to the center of target 2600 than third stack 2626 and fourth stack 2628, third stack 2626 is illustrated as lying closer to the edge of target 2600 than first stack 2622 and second stack 2624, and fourth stack 2628 is illustrated as lying closer to the edge of target 2600 than third stack 2626. Ho wever, first stack 2622, second stack 2624, third stack 2626 and fourt stack 2628 may be arranged in an suitable arrangement relative to the x-y plane with respect to one another. m

[0371] It is appreciated that although in Figs, 26A - 26E, each of the periodic struc tures of first slack 2622»second stack 2624, third stack 2626 and fourth stack 2628 are shown as being ferrned of a plurality of lines and spaces, in. other embodiments of the invention, the periodic structures of first stack 2622, second stack 2624, third stack 2626 and fourth stack 2628 may be formed of any suitable periodic features. It is further appreciated that the periodic features forming the periodic structures included in first stack 2622, secon stack 2624, third stack 2626 and fourt stack 2628 may be formed of sub-structures. The pitches of each of the periodic structures of first stack 2622, second stack 2624, dried stack 2626 and fourth stack 2628 are preferably between 10 ran - 3000 nm, and more preferably between 200 urn - 800 nm.

[0372] As seen in Fig. 26A, in each of quadrants 2612, 2614, 2616 and 2618, a first plane 2631 , intersecting first stack 2622 and including a plurality of first axes 2632 lying therein, a second plane 2633. intersecting second stac 2624 and including a plurality of second axes 2634 lying therein, a third plan 263:5, intersecting third stack 2626 and including a plurality of third axes 2636 lying therein, and a fourth plane 2637, intersecting fourth stack 2628 and including a plurality of fourth axes 2638 lying therein, are defined. Each of first plane 2631 , second plane 2633, third plane 2635 and fourth plane 2637 are either an x-x plane or a y-z plane, and first axes 2632, second axes 2634, third axes 2636 and fourth axes 2638 are parallel to the respective x-axis or y-axis, depending on the orientation of first stack 2622, second stack 2624, third stack 2626 and fourth stack 2628 within each of quadrants 2 12, 614, 2616 and 2618, It is appreciated that in each of quadrants 2612, 2614, 2616 and 2618, first plane 2631, second plane 2633, third plane 2635 and fourth plane 2637 are all parallel to one another.[003731 As seen particularly in Fig, 26B, in a preferred embodiment of the present invention, first stack 2622 includes a first stack first periodic structure (SI P!) 2642 formed together with first layer 2602 and having air SIP ! pitch, designated r, along one of first stack axes 2632. Preferably, first stack 2622 further includes a first stack second periodic structure ($i 2) 2644 formed together with second mlayer 2604 and having an S1P2 pitch, designated £, along another of first stack axes 2632.

[0374] It is appreciated that SIP 1 2642 and S1P2 2644 at least partially overlie one another, and thus a first stack moire pattern 2650 is visible upon imaging first stack 2622. As is known i the art, first stack mou€ pattern 2650 is characterized by a pitchwhich is a function of pitches f and B, as sho wn in equation 64:Preferably, first stack 2622 does not include periodic structures formed together with third layer 2606 or fourth layer 2608 which affect moire pattern 2650. However, first stack 2622 may include periodic structures formed together with third layer 2606 or fourth layer 2608 which do not affect moire pattern 2650, such as periodic structures which are periodic in a plane parallel to the x-y plane alon an axis that is perpendicular to first stack axes 2632 or periodic structures having a pitch size that does not affect moire pattern 2650.

[0375] In another embodiment of the present i n vention, first stack 2622 includes only S IP 1 2642 and not S1P2 2644, and no moire pattern 2650 is visible upon imaging first stack 2622.

[0376] As seen particularly in Fig. 26C, in a preferred embodiment of the present invention, second stack 2624 .includes a second stack first periodic:structure (S2PI ) 2652 formed together with first layer 2602 and having an S2P1 pitch, designated )K, along one of second stack axes 2634. Preferably, second stack 2624 does not include periodic structures formed together with any of first, third or fourth layers 2602, 260 or 2608 which would, together with S2PI 2652, produce a moire pattern upon imaging second stack 2624. However, second stack 2624 may include periodic structures formed together with first, third or fourth layers2602, 2606 or 2608 which do not produce a moire pattern upon imaging second stack 2624, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to second stack axes 2634 or periodic mstructures having a pitch size that does not produce a moire pattern upon imaging second stack 2624.[Q0377J As seen particularly in Fig 26D, in a preferred embodiment of the present invention, third stack 2626 includes a third snack first periodic structure (S3P1) 2662 formed together with second layer 2604 and having an S3P1 pitch, designated H, along one of third stack axes 2636 Preferably, third stack 2626 further includes a third stack second periodic structure (S3P2) 2664 formed together with third layer 2606 and having an S3P2 pitch, designate ft, along another of third stack axes 2636

[0378] It is appreciated that S3P1 2662 and S3P2 2664 at least partially overlie one another, and thus a third stack moire pattern 2670 is visible upon imaging third stack 2626 As is known in the art, thir stack moire pattern 2670 is characterized by a pitc jfo, which is a function of pitch M and pitch ft, as shown in equation 65:Preferably, third stack 2626 does not include periodic structures formed together with first layer 2602 or fourth layer 2608 which affect moiri pattern 2670 However, third stack 2626 may include periodic structures formed together with first layer 2606 or fourth layer 2608 which do not affect moire pattern 2670, such as periodic structures which are periodic in a plans parallel to the x-y plane along an axis that is perpendicular to thir stack axes 2636 or periodic structures having a pitch si¾e that does not affect moire pattern 2670

[0379] As seen particularly in Fig. 26E, in a preferred embodiment of the present invention, fourth stack 2628 includes a fourt stack first periodic structure (S4P 1 ) 2672 formed together with third layer 2606 and having an S4P1 pitch, designated zM, along one of fourth stack axes 2638. Preferably, S4P1 pitch zfi is related to S3P2 pitch ft by a fourth stack multiplicative factor, designated z. Fourth stack multiplicative factor ¾ may be any positive number Preferably, fourth stack 2628 further includes a fourth stack second periodic structure (S4P2) 2674 formed>6together with fourth layer 2608 and having a» S4P2 pitch, designated ¾ along another of fourth stack axes 2638 Preferably, S4P2 pitch z.H is related to S3P1 pitch M by fourth stack multiplicative factor z. It Is appreciated that fourth stack multiplicative factor z relating S4P2 pi tch zM to S3PI pitch M has the same value as fourth stack multiplicative factor z relating S4P1 pitch zM to S3P2 pitch ft In an embodiment of the present invention, the value of z is 1 and thus S4P1 pitch z.M is identical to S3P2 pitc II and S4P2 pitch zH is identical to S3 ! pitch M.

[0380] It is appreciated that S4P1 2672 and S4P2 2674 at least partially overlie one another, and thus a fourth stack moird: pattern 2680 is visible upon imaging fourth stack 2628 As is known in the art, fourth stack moire pattern 2680 is characterized by a pitch U, which is a function of fourth stack multiplicative factor z, pitch I-i and pitch ft, as shown in equation 66:A> =z(ΐ¾)Preferably, fourth stack 2628 does not include periodic structures formed together with first layer 2602 or second layer 2604 which affect moire pattern 2680 However, fourth stack 2628 ma include periodic structures formed together with first layer 2602 or second layer 2604 which do not affect moire pattern 2680, such as periodic structures which are periodic in a plane parallel to the x-y plane along an axis that is perpendicular to fourth stack axes 2638 or periodic structures having a pitch size that does not affect moire pattern 2680.

[0381] Misregistration between any two of layers 2602, 2604, 2606 and 2608 is preferably measured using an imaging misregistration metrology tool having adjustable polarization wavelength and numerical aperture settings. An example of a suitable Imaging misregistration metrology too! is an Archer*** 700, commercially available from KLA Corporation, of Milpitas CA, USA, Pitches f, B, H, ft, zH and zft need not be optically resolvable by the misregistration metrology tool used to generate an image of target 2600. However, it is preferable that each of pitches ¾C iffis optically resolvable by the isregistration metrology tool used to generate an Image of target 2600.

[0382] Reference is now mad to Figs. 27 A 8c 27B, which together are a simplified flowchart illustrating a preferred method of calculating misregistration, using a multi-layered moire target 2700»such as a target 2500: (Figs. 25 A ~ 25E) or target 2600 (Figs. 26 A - 26B}, in a direction parallel to either the x or the y direction between a first, a second, a third and a fourth layer 2702, 2704, 2706 and2708, such as layers 2502, 2504, 2506 and 2508 (Figs. 25A - 25E) or 2602, 2604, 2606 and 2608 (Figs. 26A - 26E) of a multilayered semiconductor device wafer formed with target 2700. Reference is further made to Figs, 27C & 27D, which are simplified pictorial illustrations of first and second embodiments of a portion of the method of Figs, 27 A & 27B, respectively.[003831 While it is appreciated that when milking target 2600 (Figs. 26A - 26E) the method described with reference to Figs. 27A - 27D may be performed only once to calculate misregistration in either the x or the y direction, typical! y, the method described in Figs, 2 A - 27D will be performed twice, to calculate misregistration in each of the x and y directions. It is also appreciated that when utilising target 2500 (Figs. 25A ~ 25E) misregistration may be calculated only in the one direction to which first, second, third stack and fourth stack axes 2532, 2534, 2536 and 2538 are parallel.[(>0384] As seen at a first step 2709, a direction in which to measure misregistration is selected. When using target 2500 in the method of Figs. 27A & 27B, the direction in which to measure misregistration is automatically selected to be the direction to which first, second, third and fourth stack axes 2532, 253...

Claims

CLAIMS1. A multi-layered moire target useful it* the calculation of the misregistration between at least a first layer, a second layer and a third layer, the first layer, second layer and third layer being formed on a semiconductor device wafer, the semiconductor device wafe defining an x~y plane, the multi-layered moire target comprising;at least one group of periodic structure stacks, each of said at least one group comprising:a first stack of periodic structures, comprising at least a first stack first periodic structure {SIP! } formed together with at least one of said first layer, said second layer and said third layer, said SIP! Slaving an SIP! pitch along a first axis;a second stack of periodic structures, comprising at least a second stack first periodic structure (S2P1) formed together with at least one of said first layer, said second layer and said third layer, said S2P1 having an S2P1 pitch along a second axis; anda third stack of periodic structures, comprising at least a third stack first periodic structure (S3PI) formed together with at least one of said first layer, said second layer and said third layer, said S3P1 Slaving a S3P1 pitch along a third axis,said first axis being parallel to either an x-axis or a y-axis when said target is imaged in said x~y plane;said second axis and said third axis being parallel to said first axis when said target is image in said x-y plane, aidat least one of said first, second and third stacks comprising a second periodic structure having a second periodic structure pitch along at l ast one fourth axis parallel to said first axis and co-axial with one of said first axis, said second axis and said third axis when said target is imaged in said x-y plane.2 The multi-layered moire target according to claim I and wherein;said first layer defines a first generally planar surface parallel to said x-y plane;said second layer defines a second generally planar surface parallel to said x-y plane;said third layer defines a third generally planar surface parallel to said x-y plane;said first axis lies in a first plane parallel to one of an x-z plane or a y-z plane, said one of an x-z plane or a y plane, together with said x-y plane, defining a three-dimensional x-y-x coordinate system;said second axis lies in a second plane parallel to said first plane;said third axis lies in a third plane parallel to said first plane; and said at least one fourth axis lies in a respective one of said first plane, said second plane and said third plane and is parallel to a respective one of said first axis, said second axis or said third axis.

3. The multi-layered moire target according to claim 1 or claim 2 and wherein;said first stack of periodic structures comprises said S I F i formed together with said first layer and a first stack second periodic structure (S1 F2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fourth axis being co-axial with said first axis when said target is imaged in said x-y plane;said second stack of periodic structures comprises said S2P 1 formed together with said second layer and a second stack second periodic structure (S2P2) formed together with said third layer, said S2P2 having an S2P2 pitch along a second one of said at least one fourth axis being co-axial with said second axis when said target is imaged in said x-y plane; andsaid third stack of periodic structures comprises said S3P1 formed together with said first layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3F2 having an S3P2 pitch along a third one of said at least one fourth axis when said target is imaged in said x-y plane4. The multi-layered moire target according to claim 3 and wherein:said S2P1 pitch is related to said SIP2 pitch by a second stack multiplicative factor,said S2P2 pitch is related to said SIP! pitch by said second stack multiplicative factor;said S3PI pitch is related to said S!PI pitch by a third stack multiplicative factor; andsaid S3F2 pitch is related to said SIP2 pitch by said third stack mid tip I ieati ve factor.

5. The multi-layered moire target according to claim 4 and whereinsaid second stack multiplicative factor is equal to one; and said third stack multiplicative factor is equal to one.

6. The multi-layered moire target according to claim 1 or claim 2 and wherein;said first stack of periodic structures comprises said SI Pi formed together with said first layer and a first stack second periodic structure (SIP2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fourth axis;said second stack of periodic structures comprises said S2P1 formed together wit said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2P2 pitch along a second one of said at least one fourth axis; andsaid third stack of periodic structures comprises said S3? I formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a third one of said at least one fourth axis.

7. The multi-layered moire target according to claim 1 or claim 2 and wherein;said first stack of periodic structures comprises said S I Pi formed together with said first layer and a first stack second periodic structure (S1P2) formed togetherwith said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fourth axis;said second stack of periodic structures comprises said S2PI formed together with said first layer and a second stack second periodic structure (S2F2) formed together with sai second layer, said S2F2 having an S2P2 pitch along a second one of said at least one fourth axis; andsaid third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said first layer, said S3P2 having an S3P2 pitch along a third one of said at least one fourth axis.

8. The ulti-layered moire target according to claim 6 or claim 7 and wherein said S3P1 pitch is related to said S2P2 pitch by a third stack multiplicative laetor; andsaid S3P2 pitch is related to said S2PI pitch by said third stack multiplicative factor.

9. The multi-layered oire target according to claim 8 and wherein said third stack multiplicative factor is equal to one. i t). The multi-layered moire target according to claim and whereinsaid SiPl pitch is the same s said S2P2 pitch; andsaid SI P2 pitch is the same as said S2P1 pitch. 1 1. The multi-layered moire target according to clai m 6 or claim 7 and wherein said SlPl pitch is the same as said S2P1 pitch;said S1P2 pitch differs from said SlPl pitch by an additive term;said S2P2 pitch differs from sai SI. PI pitch by said addi tive term;said S3P1 pitch differs from sai SlPl pitch by said additive term; and said S3P2 pitch is the same as said SI P I pitch.12 The multi-layered moire target according to claim 1 or claim 2 and wherein:said first stack of periodic structures comprises said S I Pi fanned together with said second layer;said second stack of periodic structures comprises said S2P1 formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2F2 pitc along a second one of said at teas! one fourth axis; andsaid third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having art S3P2 pitc along a third one of said at least one fourth axis.13, The multi-layered moir target according to claim. 12 and whereinsaid S2F1 pitch is the same as said S3P2 pitch; andsaid S2P2 pitch is the same as said S3P1 pitch.

14. The multi-layered moire target according to claim 5 or claim 2 and wherein;said first stack of periodic structures comprises said SIP 1 formed together with said second layer;said second stack of periodic structures comprising said S2P1 formed together with said first layer; andsaid third stack of periodic structures comprises said S3PI formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, sai S3P2 having an S 3P2 pitch along said at least one fourth axis.15 The multi-layered moire target according to claim i or claim 2 and wherein;said first stack of periodic structures comprises said S 1 P i formed together with said first layer;19isaid second stack of periodic structures comprising said S2PI formed together with said first layer; andsaid third stack of periodic structures comprises said S3P.1 formed together with said first layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along said at least one fourth axis.

16. The multi-layered moire target according to claim 1 or claim 2 and wherein:said first stack of periodic structures comprises said SIP! formed together with said second layer;said second stack of periodic structures comprising said S2PI formed together with said first layer; andsaid third stack of periodic structures comprises said S3 Pi formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said first layer, said S3P2 having an S3P2 pitch along said at least one fourth axis.

17. The multi-layered moire target according to claim ! or claim 2 and wherein:said first stack of periodic structures comprises sai SIP! formed together with said first layer;said second stack of periodic structures comprises said S2P I formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2P2 pitch along a first one of said at least one fourth axis; andsaid thir stack of periodic structures comprises said S3P 1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a second one of said at least one fourth axis.

18. The multi-layered moire target according to any of claims 1 - 17 and wherein:said at least one group of periodic structure stacks inc ludes ; 2at least one first group of periodic stacks in which said first axis is parallel to said x-axis whefc said target is image in sai x-y plane; andat least one second group of periodic stacks in which said first axis is parallel to said y-axis when said target is imaged in said x-y plane.19 The multi-layered moire target according to claim 18 and wherein said at least one first group of periodic stacks and said at least one second group of periodic stacks are identical except for their orientation.

20. The multi-layered moire target according to claim 18 or claim 19 and wherein said target is characterised by mirror symmetry.

21. The multi-layered moire target according to claim 18 or claim 19 and wherein said target is characterized by rotational symmetry.

22. A multi-layered mots® target useful in the calculation of the misregistration between at least a first layer, a second layer, a third layer and a fourth layer, the first layer, second layer, third layer and fourth layer being formed on a semiconductor device wafer, the semiconductor device wafer defining an x-y plane, the multi-layered moire target comprising:at least one group of periodic structure stacks, each of said at least one group comprising:a first stack of periodic structures, comprising at least a first stack first periodic structure (SIP 1 ) formed together with at least one of said first layer, said second layer, said third layer and said fourth layer, said SiPl having an SIP! pitch along a first axis;a second stack of periodic structures, comprising at least a second stack first periodic structure (S2P1 ) formed together with at least one of said firs layer, said second layer, said third layer and said fourth layer, said S2P1 having an S2P1 pitch along a second axis;a third stack of periodic structures, comprising at least a third stack first periodic structure (S3PI) formed together with at least one of said first layer, said secondlayer, said third layer and sai fourth layer, said S3P1 having an S3PI pitch along a third axis; anda fourth stack of periodic structures comprising at least a fourth stack first periodic structure (S4PI) formed together with at least one of said first layer, said second layer, sai third layer and said fourth layer, said S4P1 having an S4P1 pitch along a fourth axis,said first axis being parallel to either an x-axis or a y-axis when said target is imaged in said x-y plane;said second axis, said third axis and said fourth axis being parallel to said first axis when said target is imaged in said x-y plane, andat least one of said first, second, third and fourth stacks comprising a second periodic structure having a second periodic structure pitch along at least one fifth axis parallel to said first axis and co-axial with one of said first axis, said second axis, said third axis and said fourth axis when said target is imaged in said x-y plane.

23. The mul i-layered moire target according to claim 22 and wherein:said first layer defines a first generally planar surface parallel to said x-y plane;said second layer defines a second generally planar surface parallel to said x-y plane;said third layer defines a third generally planar surface parallel to said x-y plane;said fourth layer defines a first generally planar surface parallel to said x- y plane;said first axis lies in a first plane parallel to one of an x-z plane or a y-Z plane, sai one of an x-z plane or a y-z plane, together with said x-y plane, defining a three-dimensional x-y-z coordinate system;said second axis lies in a second plane parallel to said first plane;sai third axis lies in a thir plane parallel to said first plane; said fourth axis lies in a third plane parallel to said first plane; andsaid at least one fifth axis lies in a respective one of said first plane, said second plane, said third plane and said fourth plane and is parallel to a respecti ve one of said first axis, said second axis, thirds axis or said fourth axis. 24 The multi-layered moire target according to claim 22 or claim 23 and wherein;said first stack of periodic structures comprises said S1P 1 formed together with said first layer and a first stack second periodic structure (S1 P2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fift axis being co-axial with said first axis when said target is imaged in said x-y plane;said second stack of periodic structures comprises said S2P1 formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2P2 pitch along a second one of said at least one fifth axis being co-axial with said second axis when said target is imaged in said x-y plane;said third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having art S3P2 pitch along a third one of said at least on e fifth axis being co-axial with said third axis when said target is imaged in said x-y plane; andsaid fourth stack of periodic structures comprises said S4P1 formed together with said third layer and a fourth stack second periodic structure (S4P2) formed together with said fourth layer said S4P2 having an S4P2 pitch along a fourth one of said at least one fifth axis being co-axial with said fourth axis when said target is imaged in sai x-y plane.24 The multi-layered moire target according to claim 23 and wherein:sai S3P1 pitch is related to said S2P2 pitch by a third stack multiplicative factor;said S3P2 pitch is related to said S2P! pitch by said third stack multiplicative factor;said S4P1 pilch is related to said S2P1 pitch by a fourth stack multiplicative factor; andsaid S4P2 pitch is related to sai S2P2 pitch by said fourth slack multiplicative factor.25 The multi-layered moire target according to chum 22 or claim 23 and wherein:said first stack of periodic structures comprises said SIP 1 formed together with said first layer and a first stack second periodic structure (S1 P2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said t least one fifth axis being co-axial with said first axis when said target is imaged in said x-y plane;said second stack of periodic structures comprises said S2P1 formed together with said second layer;said third stack of periodic structures comprises said S3P 1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a second one of said at least one fifth axis being co-axial with said third axis when said target is imaged in said x-y plane; andsaid fourth stack of periodic structures comprises said S4P1 formed together with said third layer an a fourth stack second periodic structure (S4P2) formed together with said fourth layer, said S4P2 having an S4P2 pitch along a third one of said at least one fifth axis being co-axial with said fourth axis when said target is imaged in said x-y plane.

26. The multi-layered moire target according to claim 25 and wherein:said S4P1 pitch is related to said S3P2 pitch by a fourth stack multiplicative factor; andsai S4P2 pitch is related to said S3 Pi pitch by said fourth stack multiplicative factor.]%27. The multi-layered moire target according to claim 22 or claim 23 and wherein:said first stack of periodic structures comprises said S i Pi formed together with said first layer and a first stack second periodic structure (S1P2) formed together with said second layer, said SI P2 having an SI P2 pitch along a first one of said at least one fifth axis being co-axial with said first axis whe said target is imaged in said x-y plane;said second stack of periodic structures comprises said S2Pi formed together with said second layer and a second stack second periodic structure (S2P2) formed together with said third layer said S2P2 having an S2P2 pitch along a second one of sai at least one fifth axis being co-axial with said second axis when said target is imaged in said x-y plane;said third stack of periodic structures comprises said S3P1 formed together with said first layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a third one of said at least one fifth axis being co-axial with said third axis when said target is imaged in said x-y plane; andsaid fourth stack of periodic structures comprises said S4P1 formed together with said third layer and a fourth stack second periodic structure (S4P2) formed together with said fourth layer, said S4P2 having an S4P2 pitch along a fourth one of said at least one fifth axis being co-axial with said fourth axis when said target is imaged in said x-y plane.

28. The multi-layered moire target according to claim 27 and wherein:said S2P1 pitch is related to said S1P2 pitch by a second stack multiplicative factor;said S2P2 pitch is related to said St PI pitch by said second stack multiplicative factor;said S3P1 pitch is related to said SI Pi pitch by a third stack multiplicative factor;said S3P2 pitch is related to said SIP2 pitch by said third stack multiplicative factor;said S4P1 pilch is related to said SIP2 pitch by a fourth stack multiplicative factor; andsaid S4P2 pitch is related to sai SIPI pitch by said fourth slack multiplicative factor.29‘The multi-layered moire target according to claim 22 or claim 23 and wherein:said first stack of periodic structures comprises said SIPI formed together with said first layer and a first stack second periodic structure (S1 P2) formed together with said second layer, said SIP2 having an S1P2 pitch along a first one of said at least one fifth axis being co-axial with said first axis when said target is imaged in said x-y plane;said second stack of periodic structures comprises said S2P1 formed together with said second layer;said third stack of periodic structures comprises said S3P 1 formed together with said third layer; andsaid fourth stack of periodic structures comprises said S4P S formed together with said fourth layer.

30. The n lti -layered moire target according to claim 22 or claim 23 and wherein:said first stack of periodic structures comprises said SIPI formed together with said first layer and a first stack second periodic structure (S1P2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fifth axis being co-axial with said first axis when said target is imaged in said x-y plane;said second stack of periodic structures; comprises said S2P1 formed together with said second layer;said third stack of periodic structures comprises said S3PI formed together with said second layer; andsaid fourth slack of periodic structures comprises said S4P S formed together with said fourth layer."31. The multi-layered moire target according to claim 22 or claim 23 and wherein:said first stack of periodic structures comprises said SIP I formed together with said first layer and a first stack second periodic structure (S1P2) formed together with said second layer, said S1 P2 having an S.1 P2 pitch along a first one of said at least one fifth axis being co-axial with said first axis when said target is imaged in said x-y plane;said second stack of periodic structures comprises said S2P1 formed together with said second layer;said third stack of periodic structures comprises said SIP ! formed together with said third layer; andsaid fourth stack of periodic structures comprises said S4PI formed together with said second layer.

32. The multi-layered moire target according to claim 22 or claim 23 and wherein:said first stack of periodic structures comprises said SIP! formed together with said first layer and a first stack second periodic structure (SiP2) formed together with said second layer, said SI P2 having an SI P2 pitch along a first one of said at least one fifth axis being co-axial with said first axis when said target is imaged in said x-y plane;said second stack of periodic structures comprises said S2P1 formed together with said second layer;said third stack of periodic structures comprises said S3P 1 formed together with said third layer; andsaid fourth stack of periodic structures comprises sai S4P1 formed together with said third layer.

33. The niulti-la ered moire target according to any of claims 22 - 32 and wherein:said at least one group of periodic structure stacks includes:at least one first group of periodic stacks in which said first axis is parallel to said x-axis wheft said target is image in sai x-y plane; andat least one second group of periodic slacks in which said first axis is parallel to said y-axis when said target is imaged in said x-y plane.34 The multi-layered moire target according to claim 33 and wherein said at least one first group of periodic stacks and said at least one second group of periodic stacks are identical except for their orientation.

35. The multi-layered moire target according to claim 33 or claim 34 mid wherein said target is characterised by mirror symmetry.

36. The multi-layered moire target according to claim 33 or claim 34 and wherein said target is characterized by rotational symmetry.

37. A multi-layered moke target useful in the calculation of the misregistration between at least a first layer, a second layer, a third layer and a fourth layer, the first layer, second layer, third layer an fourth layer being formed on a semiconductor device wafer, the semiconductor device wafer defining an x-y plane, the multi-layered moire target comprising;at least one group of periodic structure stacks, eac of said at least one group comprising;a first stack of periodic structures, comprising at least a first stack first periodic structure (SIP 1 ) formed together with at least one of said first layer, said second layer said third layer and said fourth layer, said S1P1 having an S1 P1 pitch along a first axis;a second stack of periodic structures, comprising in least a second stack first periodic structure (S2P1 ) formed together with at least one of said first layer, said second layer, said third layer and said fourth layer, said S2P1 having an S2P1 pitch along a second axis; anda third stack of periodic structures, comprising at least a third stack first periodic structure (S3PI) formed together with at least one of said first layer, said secondlayer, said third layer and sai fourth layer, said S3P1 having an S3PI pitch along a third axis;said first axis being parallel to either an x-axis or a y-axis when said target is imaged in said x-y plane;said second axis and said third axis being parallel to said first axis when said target is imaged in said x-y plane, andat least one of said first, second and third stacks comprising a second periodic structure havin a second periodic structure pitch along at least one fourth axis parallel to said first axis and co-axial with one of said first axis, said second axis and said third axis when said target is imaged in said x-y plane.

38. The multi-layered moire target according to claim 37 and wherein:said first stack of periodic structures comprises said SIP 5 formed together with said first layer and a first stack second periodic structure (S1.P2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fourth axis;said second stack of periodic structures comprises said S2PI formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said third layer, said S2P2 having an S2P2 pitch along a second one of said at least one fourth axis; andsaid third stack of periodic structures comprises said S3 PI formed together with said first layer and a third stack second periodic structure (S3P2) formed together with said fourth layer, said S3P2 ha ving an S3P2 pitch along a third one of said at least one fourth axis.

39. The multi-layered moire target according to claim 37 or claim 38 and wherein:said at least one group of periodic structure stacks includes:at least one first group of periodic stacks in which said first axis is parallel to said x-axis when said target is imaged in said x-y plane; andat least one second group of periodic stacks in which said first axis is parallel to said y-axis when said target is imaged in said x-y plane.20 f40. Tί*e multi-layered moire target according to claim 39 a«d wherein said at least one first group of periodic stacks sod said at least one second group of periodic stacks are identical except for their orientation.