Hall microsensor

Abstract

The Hall microsensor contains a thin l-type semiconductor substrate (1) in the shape of a parallelepiped and a power supply current source (2). On the two long and narrow sides of the substrate (1), five ohmic contacts are formed in sequence from left to right-respectively the first (3) and (4), the second (5) and (6), the third (7) and (8), the fourth (9) and (10), and the fifth (11) and (12). The two third contacts (7) and (8) are central, while the first (3) and (4) and the fifth (11) and (12), as well as the second (5) and (6) and the fourth (9) and (10), are symmetrical relative to the central ones (7) and (8). Contacts (7) and (8) are bounded on both sides and in their vicinity by one p-type zone each (13) and (14), and respectively (15) and (16), penetrating deeply into the volume of the substrate (1). On the inner regions of the extreme first (3) and (4) and fifth contacts (11) and (12), and near them, one p-type zone each is also formed-respectively (17) and (18), and (19) and (20), penetrating deeply into the volume. The central contacts (7) and (8), as well as the extreme contacts (3) and (4), and respectively (11) and (12), are twice as wide as the second (5) and (6) and the fourth (9) and (10). All the extreme contacts (3), (4), (11), and (12) are electrically connected to one terminal of the current source (2), whose other terminal is connected to both contacts (7) and (8). The pairs of second (5) and (6) and fourth (9) and (10) contacts are output contacts and are connected respectively to the non-inverting or only inverting inputs of the first (21) and second (22) operational amplifiers. The outputs of amplifiers (21) and (22) are connected to the input of a third differential amplifier (23), whose output is the output (24) of the microsensor, while the measured magnetic field (25) is perpendicular to the main plane of the substrate (1).