Method for increasing evenness of etching channels in semiconductor
A semiconductor and uniformity technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems affecting the yield and the uniformity of deep trenches is not good enough, so as to improve the uniformity of income and etching depth. Easier and better uniformity
Inactive Publication Date: 2007-09-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] Since semiconductor materials are generally long-range ordered single crystal structures, when etching deep trenches, the uniformity of deep trenches is not good enough due to the limitation of the capacity of existing etching equipment (limitation of plasma density, bias strength, etc.) , which directly affects the yield
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0011] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0012] As shown in Figure 2, technological process of the present invention is as follows:
[0013] The first step is to uniformly coat a layer of photoresist with an appropriate thickness on the surface of the semiconductor material. Figure 2(a).
[0014] In the second step, use a photolithography machine and a corresponding mask to expose and develop the photoresist in the area to be etched. The photoresist in the region where the trench needs to be formed is removed, and the photoresist remains in the region where the trench does not need to be formed. Figure 2(b).
[0015] The third step is to use the method of ion implantation, using appropriate energy, dose, and angle, to implant ions of the same semiconductor material into the area to be etched, destroying the crystal characteristics of the semiconductor material in this area, and destroying t...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention raises controllability for evenness of etching trench of semiconductor so as to raise rate of finished products. Main points of technical scheme include following steps: (1) coating a layer of photoresist in suitable thickness on surface of semiconductor material evenly; (2) exposing and developing photoresist on area needed to be etched to remove photoresist, where trench will be formed on; photoresist reserved at area, where trench will not be formed on; (3) through ion implantation method, injecting same ions of semiconductor material to area needed to be etched in order to destroy crystal characteristics of semiconductor material in the area to turn semiconductor material in monocrystal to structure of non crystal; (4) through dry-process etching, removing semiconductor material in area, where trench will be formed on, so as to form needed trenches; (5) removing photoresist so as to obtain needed semiconductor material.
Description
technical field [0001] The invention relates to the technical field of semiconductor etching, in particular to a method for improving the etching uniformity of semiconductor trenches. Background technique [0002] At present, the etching process for semiconductor trenches is as follows, as shown in Figure 1: First, uniformly coat a layer of photoresist with a suitable thickness on the surface of the semiconductor material, as shown in Figure 1(a): Then, use a photolithography machine and corresponding The mask plate is exposed to the photoresist in the area to be etched, developed, and the photoresist in the area where the ditch needs to be formed is removed, and the photoresist is retained in the area where the ditch does not need to be formed, as shown in Figure 1 (b); then, use The dry etching method removes the semiconductor material in the area where the trench needs to be formed to form the required trench, and other places are not affected by etching because of the pr...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L21/3065
Inventor 那炜
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP