Measuring device of deep energy level transient state spectrum having external magnetic field and measuring method
A technology of external magnetic field and measuring device, which is applied in the direction of measuring device, measuring electric variable, semiconductor/solid-state device testing/measurement, etc., and can solve problems such as unavailability
Inactive Publication Date: 2007-12-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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[0003] The purpose of the present invention is to provide a deep-level transient spectrum measurement device and measurement method with an external magnetic field, which can be used to solve the problem of dilute magnetic semiconductors that cannot be provided by the deep-level transient spectrum measurement of impurities and defects in traditional semiconductor materials. Information about the interaction between the deep energy level introduced by magnetic ions in the material and the external magnetic field, providing semiconductor (non-magnetic and magnetic) material impurities and defects in the deep energy level transient spectrum measurement device and measurement method under the condition of no magnetic field and external magnetic field
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[0031] Please refer to Fig. 1, a deep energy level transient spectrum measurement device with an external magnetic field of the present invention is used to observe the interaction information between the deep energy level and the external magnetic field of impurities and defects introduced by magnetic ions in dilute magnetic semiconductor materials, include:
[0032] A permanent magnet C, the permanent magnet C is cylindrical; the permanent magnet C is made of rare earth material, with a diameter of 30 mm, a magnet strength range of 300-3000 gauss, and a thickness range of 3.5-6.5 mm;
[0033] A bottom plate B, the bottom plate B is placed under the permanent magnet C; the material of the bottom plate B is oxygen-free red copper;
[0034] Two protective plates A, the protective plates A are rectangular, and the two protective plates A are placed on both sides of the permanent magnet C and the bottom plate B; the material of the protective plates A is polytetrafluoroethylene; ...
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Abstract
The present invention relates to deep level transient spectroscopy measurement equipment with applied magnetic field and its measurement method. Said equipment includes a cylindrical permanent magnet, a baseplate which is placed under the permanent magnet, two protective plates, said protective plate is rectangular, said two protective plates are placed at two sides of permanent magnet and baseplate and a mesa. Said mesa is rectangular, and is placed on the permanent magnet for covering said permanent magnet and two protective plates.
Description
technical field [0001] The patent of the present invention relates to the measurement device and measurement method of the electrical characteristics of semiconductor (non-magnetic and magnetic) materials and related devices (deep energy level transient spectrum of impurities and defects of materials, sample capacitance-voltage and current-voltage characteristic curves), especially It relates to the external magnetic field device and measurement method for the measurement of the transient spectrum of the deep energy level of the diluted magnetic semiconductor, and the interaction information between the deep energy level and the external magnetic field of the impurity and defect related to the magnetic ion doping in the diluted magnetic semiconductor material. Background technique [0002] In 1974, D.V Lang of Bell Laboratories in the United States invented the deep-level transient spectrum technology for measuring impurities and defects in non-magnetic semiconductor material...
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IPC IPC(8): G01R31/26G01R31/00H01L21/66G01N27/83
Inventor 卢励吾张砚华葛惟昆
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI