Solid-state imaging device and method for producing the same
一种固态成像器件、逐像素的技术，应用在电固体器件、固体图像信号发生器、半导体器件等方向，能够解决伸长、光泄漏等问题
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no. 1 example
[0035]FIG. 1 is a schematic plan view showing a solid-state imaging device according to a first embodiment of the present invention. FIG. 1 mainly shows features related to charge transfer. A solid-state imaging device includes a plurality of pixels. In FIG. 1 , an area occupied by a single pixel is represented as a unit pixel 12 . The photodiode portion 104 serving as a photoelectric conversion portion generates charges in accordance with the intensity of light it receives. Each vertical CCD 16 receives charges generated by the respective photodiode sections 104 from a plurality of pixels and transfers the charges. Horizontal CCD 18 receives charge from vertical CCD 16 and transfers the charge to output amplifier 20 . The flow of signal charges is indicated by arrows 14 .
[0036] FIG. 2 is a schematic cross-sectional view showing the solid-state imaging device taken along the dotted line 22 in FIG. 1 according to the first embodiment. Unless otherwise stated, the follow...
no. 2 example
[0058] 9 is a schematic sectional view showing a solid-state imaging device according to a second embodiment of the present invention. Next, a second embodiment of the present invention will be described with reference to FIG. 9 . Although the present invention describes an interline CCD solid-state imaging device, the present invention can also be applied to any other type of solid-state imaging device, such as a MOS type solid-state imaging device.
[0059] As shown in FIG. 9, the solid-state imaging device according to this embodiment includes: Si substrate 102, photodiode portion 104, charge transfer portion 106, gate 108, photomask metal film 110, MOS gate insulating film 112, interlayer insulating The film 114, the insulating film 116', the upper lens 122, and the color filter layer 120 are the same as their respective counterparts in the first embodiment. The description of these means will be omitted.
[0060] In this embodiment, each set of upper lens 122 , center l...
no. 3 example
[0071] The first and second embodiments describe interline CCD type solid-state imaging devices. However, the solid-state imaging device according to the present invention may be any other CCD type solid-state imaging device or MOS type imaging device. Each of FIGS. 16 and 17 is a schematic sectional view illustrating a case where an FDA (Floating Diffusion Amp) type MOS imaging device is used as a solid-state imaging device. The present invention is equally applicable to any other MOS type solid-state imaging devices.
[0072] In the case of a MOS type imaging device, especially, multilayer wiring is generally applied. Therefore, in order to efficiently condense light from an external light source to the photodiode portion, it is preferable to apply a multilayer lens. As shown in FIGS. 16 and 17, by using a Fresnel lens structure as an in-layer lens, the height of the in-layer lens can be made lower than the thickness of each wiring layer. As a result, an intralayer lens c...
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