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Bi-Te base thermoelectric material and process for preparing the same

A technology of thermoelectric materials and preparation process, which is applied in the direction of thermoelectric device node lead-out materials, etc., can solve the problems such as no implementation plan, and achieve the effect of low cost, high thermoelectric performance and simple process

Inactive Publication Date: 2008-03-19
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some literatures report that the thermoelectric figure of merit ZT value of materials prepared by zone melting method can reach 1.22, but there is no specific implementation plan

Method used

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  • Bi-Te base thermoelectric material and process for preparing the same
  • Bi-Te base thermoelectric material and process for preparing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] In the pseudo binary alloy Bi 0.5 Sb 1.5 Te 3 The Ag element with a mole fraction of 0.1 is used to replace the Sb element with an equal mole fraction. According to the molecular formula Bi 0.5 Sb 1.4 Ag 0.1 Te 3 Four elements of Ag, Bi, Sb and Te with a purity greater than 99.999wt% were weighed and placed in a vacuum quartz tube, melted at 1000°C and kept for 10 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After 10 hours, it was quenched in water to obtain a bulk metal telluride, which was then pulverized and ball milled. The ball milling time was controlled at 5 hours, and finally formed by discharge plasma spark sintering (SPS) under high vacuum.

Embodiment 2

[0023] In the pseudo binary alloy Bi 0.5 Sb 1.5 Te 3 The Ag element with a mole fraction of 0.2 is used to replace the Sb element with an equal mole fraction. According to the molecular formula Bi 0.5 Sb 1.3 Ag 0.2 Te 3 Four elements of Ag, Bi, Sb and Te with a purity greater than 99.999wt% were weighed and placed in a vacuum quartz tube, melted at 1000°C and kept for 10 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After 10 hours, it was quenched in water to obtain a bulk metal telluride, which was then pulverized and ball milled. The ball milling time was controlled at 5 hours, and finally formed by discharge plasma spark sintering (SPS) under high vacuum.

Embodiment 3

[0025] In the pseudo binary alloy Bi 0.5 Sb 1.5 Te 3The Ag element with a mole fraction of 0.4 is used to replace the Sb element with an equal mole fraction. According to the molecular formula Bi 0.5 Sb 1.1 Ag 0.4 Te 3 Four elements of Ag, Bi, Sb and Te with a purity greater than 99.999wt% were weighed and placed in a vacuum quartz tube, melted at 1000°C and kept for 10 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After 10 hours, it was quenched in water to obtain a bulk metal telluride, which was then pulverized and ball milled. The ball milling time was controlled at 5 hours, and finally formed by discharge plasma spark sintering (SPS) under high vacuum.

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Abstract

The preparation method for p-type Bi-Te base thermoelectric material comprises: substituting equal Sb by 0.2m Ag to form Bi-Sb-Ag-Te quarternary alloy as Bi0.5Sb1-xAgxTe3(x=0.1~0.4); exactly, vacuum melting and composing material at 850-1050Deg within 10h; forming the grinded powder with SPS on 30-50MPa at 300-400Deg. This product has reliable running state, long lifetime and high thermalelectricity, brings no pollution or noise; wherein, at 554K, the Seebeck coefficient alpha is 143.8(ª–V / K), conductivity ªÊ is 6.8í‡104 ª©-1íñm-1, thermal conductivityª—is 0.57(WíñK-1íñm-1), and the dimensionless thermoelectric Q value ZT is 1.37.

Description

technical field [0001] The invention relates to the field of new materials, and is suitable for key components used in refrigeration for direct conversion of heat energy and electric energy or power generation at medium and low temperatures. Background technique [0002] Thermoelectric material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, potential applications include: household refrigerators, freezers, superconducting electronic devices Cooling and waste heat power generation, small power supply devices in remote areas, etc. [0003] The comprehensive performance of thermoelectric materials is determined by the dimensionless figure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C12/00C22C1/02C22C1/05H01L35/12B22F3/14H10N10/85
Inventor 崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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