Nanometer multilayer hard AlN/SiO2 film
A nano-multi-layer, hard technology, applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of hardness decrease and affect the coating function, etc., and achieve high hardness mechanical properties and excellent mechanical properties , the effect of great application value
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example 1
[0018] AlN / SiO of the present invention 2 The specific process parameters of the manufacturing method of the multilayer film are: Al target sputtering power is 200W, deposition time is 12 seconds, SiO 2 The target sputtering power is 60W, the deposition time is 4 seconds, and the substrate temperature is room temperature. The resulting AlN / SiO 2 The thickness of the AlN layer in the multilayer film is 3.0nm, SiO 2 The layer thickness was 0.6 nm, and the hardness of the film was 29.5 GPa.
example 2
[0020] AlN / SiO of the present invention 2 The specific process parameters of the manufacturing method of the multilayer film are: Al target sputtering power is 200W, deposition time is 12 seconds, SiO 2 The target sputtering power is 90W, the deposition time is 4 seconds, and the substrate temperature is room temperature. The resulting AlN / SiO 2 The thickness of the AlN layer in the multilayer film is 3.0nm, SiO 2 The layer thickness was 0.9 nm, and the hardness of the film was 32 GPa.
example 3
[0022] AlN / SiO of the present invention 2 The specific process parameters of the manufacturing method of the multilayer film are: Al target sputtering power is 200W, deposition time is 20 seconds, SiO 2 The target sputtering power is 40W, the deposition time is 4 seconds, and the substrate temperature is room temperature. The resulting AlN / SiO 2 The thickness of the AlN layer in the multilayer film is 4.2nm, SiO 2 The layer thickness was 0.4 nm, and the hardness of the film was 28 GPa.
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