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Method for raising property of lanthanum barium manganese oxide film by laser irradiation

A technology of laser irradiation and thin film, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of long time and insignificant TCR value effect of LBMO film, and achieve the improvement of production efficiency and the improvement of laser irradiation. The effect of short exposure time and reduced production cost

Inactive Publication Date: 2008-04-23
CHENGDU 3D CHANGE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the La prepared by PLD technique 1-x Ba x MnO 3 Thin film, TCR is generally about 4%, and the traditional high temperature annealing treatment not only takes a long time, but also has no obvious effect on improving the TCR value of LBMO film

Method used

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  • Method for raising property of lanthanum barium manganese oxide film by laser irradiation
  • Method for raising property of lanthanum barium manganese oxide film by laser irradiation
  • Method for raising property of lanthanum barium manganese oxide film by laser irradiation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] (1) Cleaning the substrate: ①Use acetone and absolute ethanol to ultrasonically clean the substrate in sequence; ②After ultrasonic cleaning, rinse with deionized water repeatedly, and after drying, place the substrate on a silicon plate heater;

[0017] (2) Vacuumize the system and heat the silicon plate: vacuumize the vacuum chamber to 5×10 -5 Pa, then heat the silicon plate and heat it while vacuuming, so that the temperature of the silicon plate rises to 700°C and the pressure in the vacuum chamber is kept at 2×10 -4 Pa;

[0018] (3) Thin film deposition: when the temperature of the silicon plate reaches 700°C and the pressure in the vacuum chamber is 2×10 -4 After Pa, fill the vacuum chamber with oxygen to keep the vacuum chamber at a flow oxygen partial pressure of 5 Pa. After the system is stabilized, the excimer laser bombards La 0.67 Ba 0.33 MnO 3 polycrystalline target;

[0019] (4) Cooling: After the deposition, the silicon plate is cooled to room tempera...

Embodiment 2

[0023] (1) Cleaning the substrate: ①Use acetone and absolute ethanol to ultrasonically clean the substrate in sequence; ②After ultrasonic cleaning, rinse with deionized water repeatedly, and after drying, place the substrate on a silicon plate heater;

[0024] (2) Vacuumize the system and heat the silicon plate: vacuumize the vacuum chamber to 5×10 -4 Pa, then heat the silicon plate and heat it while vacuuming, so that the temperature of the silicon plate rises to 750°C and the pressure in the vacuum chamber is kept at 5×10 -4 Pa;

[0025] (3) Thin film deposition: when the temperature of the silicon plate reaches 750°C and the pressure in the vacuum chamber is 5×10 -4 After Pa, fill the vacuum chamber with oxygen to keep the flow oxygen partial pressure of 30Pa in the vacuum chamber. After the system is stable, bombard La with excimer laser. 0.67 Ba 0.33 MnO 3 polycrystalline target;

[0026] (4) Cooling down: After the deposition is finished, the silicon plate is cooled...

Embodiment 3

[0030] (1) Cleaning the substrate: ①Use acetone and absolute ethanol to ultrasonically clean the substrate in sequence; ②After ultrasonic cleaning, rinse with deionized water repeatedly, and after drying, place the substrate on a silicon plate heater;

[0031] (2) Vacuumize the system and heat the silicon plate: vacuumize the vacuum chamber to 3×10 -4 Pa, then heat the silicon plate and heat it while vacuuming, so that the temperature of the silicon plate rises to 850°C and the pressure in the vacuum chamber is kept at 3×10 -4 Pa;

[0032] (3) Thin film deposition: when the temperature of the silicon plate reaches 850°C and the pressure in the vacuum chamber is 3×10 -4 After Pa, fill the vacuum chamber with oxygen to maintain a flow oxygen partial pressure of 80Pa in the vacuum chamber. After the system is stable, use an excimer laser to bombard La 0.67 Ba 0.33 MnO 3 polycrystalline target;

[0033] (4) Cooling down: After the deposition is finished, the silicon plate is co...

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Abstract

The invention relates to a method to improve the capability of lanthanum barium manganese oxygen film irradiating by laser. It includes the following steps: laying the substrate on the cleaned silicon board in vacuum room to heat; keeping 5*10-4Pa to 2*10-4Pa, 700-850 degree centigrade. The oxygen flow pressure is 5-80Pa. quasi molecule laser bombards onto La0.67Ba0.33MnO3 target material, after sediment, cooling to room temperature, putting the film on rotating platform, irradiating for 10-20 seconds by 35-60W / cm2 laser. The transforming temperature improves to 340K, TCR value improves to 8.8%K-1(307K). It lowers cost, improves efficiency, and decreases the surface roughness.

Description

technical field [0001] The invention belongs to the technical field of functional thin films. Background technique [0002] Since the huge magnetoresistance effect was discovered in La-Ba-Mn-O in 1993, La-based manganese oxide La 1-x A x MnO 3 (A=Ca, Ba, Sr) has been extensively studied. A notable feature of this type of material is that it decreases with temperature at the Curie temperature T P A paramagnetic to ferromagnetic phase transition occurs, accompanied by a phase transition from insulator to metal. This feature can be used to develop sensing elements for detecting light and heat radiation, such as a bolometer (Bolometer). [0003] The bolometer is to change some kind of electrical signal output by the device, such as resistance, according to the small temperature change of the sensitive element caused by the change of external light and heat radiation (heat, radiation). This type of detector actually expands the visual range of the human eye, especially in t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/28C23C14/58C23C14/54
Inventor 蒋毅坚常雷
Owner CHENGDU 3D CHANGE TECH