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Preparation method of deep groove and its etching mixing liquid

A deep trench, mixed liquid technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as capacitor failure, and achieve the effect of large capacitance value and increased surface area

Inactive Publication Date: 2008-05-14
PROMOS TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The local silicon substrate 20 may be etched away during the etching process, causing the two deep trenches 10 to be connected to each other, so that the subsequently formed capacitors will fail due to the formation of electrical connections.

Method used

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  • Preparation method of deep groove and its etching mixing liquid
  • Preparation method of deep groove and its etching mixing liquid
  • Preparation method of deep groove and its etching mixing liquid

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Experimental program
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Embodiment Construction

[0017] Figure 2 to Figure 5 A method of manufacturing the deep trench 40 of the present invention is shown. Such as figure 2 As shown, the present invention first forms the second trench 30 on the silicon substrate 32 by dry etching process. As the pore size of the trench 30 becomes smaller, it is difficult to maintain the vertical profile of the trench 30 prepared by the dry etching process, and a profile with a wide top and a narrow bottom is formed. Afterwards, coating etching mixture 34 on the surface of the silicon substrate 32 and in the trench 30, as image 3 shown.

[0018] The etching mixture 34 includes a conveying solution and an etchant, and the viscosity of the conveying solution is greater than that of the etchant. The delivery solution can be spin-on-glass (SOG) or photoresist, the etchant can be tetramethylammonium hydroxide (Tetramethylammonium Hydroxide, TMAH), and the volume ratio of the delivery solution to the etchant is 50:1 to 25:1. In addition, ...

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Abstract

This invention relates to a preparation method for a deep ditch, which first of all forms a ditch on a silicon base plate with an etch technology, coats an etch mixed solution on the surface of the silicon base plate and said ditch, then, removes the etch mixed solution above the preset depth on said ditch and utilizes the remained solution to etch the silicon base plate below the preset depth to form a deep ditch. Said mixed solution includes a feeding solution and an etch reagent, the viscosity of the solution is greater than that of the reagent, said feeding solution can be a spin coating glass or a photoresist and the reagent can be tetramrthylammonium hydroxide, ammonia or hydrofluoric acid, in which, the volume ratio of the solution and the reagent is between 50:1 to 20:1.

Description

technical field [0001] The invention relates to a method for preparing a deep trench (deep trench) and an etching mixture thereof, in particular to a method for preparing a deep trench applicable to a high-integration dynamic random access memory and an etching mixture thereof. Background technique [0002] The storage unit of the DRAM is composed of a metal oxide field effect transistor and a capacitor on a silicon substrate, wherein the source of the transistor is electrically connected to the upper storage electrode of the capacitor. Capacitors can be divided into two types: stacked and deep trench. Stacked capacitors form capacitors directly on the surface of the silicon substrate, while deep trench capacitors form capacitors inside the silicon substrate. In recent years, the density of DRAM has increased rapidly along with the innovation of semiconductor process technology. However, in order to achieve high integration, the size of the memory unit must be reduced, tha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306C23F1/10
Inventor 郑孟芬柏雅玲王廷熏
Owner PROMOS TECH INC