Magnetic random access memory with asymmetric clad conductor
An asymmetric, conductive technology, applied in static memory, semiconductor devices, digital memory information, etc., can solve problems such as increased power consumption, increased cost, weight and power consumption, and increased waste heat
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0050] In the following detailed description and several figures in the drawings, similar elements are identified with similar reference numerals.
[0051] As shown in the figure, for illustration, the present invention is embodied in an asymmetric cladding structure of a magnetic storage device including a magnetic field-sensitive memory cell (hereinafter referred to as a memory cell).
[0052] In Figure 7a to Figure 8b In this case, the magnetic storage unit 10 includes multiple layers, including but not limited to a reference layer 4, a data layer 2, and a barrier layer 6 located between the data layer and the reference layer (2, 4). As is well known in the field of MRAM technology, the data layer 2 includes a variable magnetization orientation indicated by a two-way arrow M, and the reference layer 4 includes a pinned magnetization orientation P whose orientation does not rotate in response to an external magnetic field. Generally, as part of the manufacturing process of the ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 