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Magnetic random access memory with asymmetric clad conductor

An asymmetric, conductive technology, applied in static memory, semiconductor devices, digital memory information, etc., can solve problems such as increased power consumption, increased cost, weight and power consumption, and increased waste heat

Inactive Publication Date: 2008-07-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First, high current increases power consumption, which is undesirable in portable or battery-operated electronics
Second, high currents can lead to increased waste heat generation, requiring fans or other cooling devices to effectively dissipate the waste heat
Those cooling devices add to the cost, weight and power draw of battery-operated devices
Third, larger drive circuits are required to deliver these high currents, which reduces the chip area available for memory or other critical circuitry in the storage device
Thus, the coating 111 has an adverse effect on another component of the inversion characteristic of the data layer 102

Method used

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  • Magnetic random access memory with asymmetric clad conductor
  • Magnetic random access memory with asymmetric clad conductor
  • Magnetic random access memory with asymmetric clad conductor

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Embodiment Construction

[0050] In the following detailed description and several figures in the drawings, similar elements are identified with similar reference numerals.

[0051] As shown in the figure, for illustration, the present invention is embodied in an asymmetric cladding structure of a magnetic storage device including a magnetic field-sensitive memory cell (hereinafter referred to as a memory cell).

[0052] In Figure 7a to Figure 8b In this case, the magnetic storage unit 10 includes multiple layers, including but not limited to a reference layer 4, a data layer 2, and a barrier layer 6 located between the data layer and the reference layer (2, 4). As is well known in the field of MRAM technology, the data layer 2 includes a variable magnetization orientation indicated by a two-way arrow M, and the reference layer 4 includes a pinned magnetization orientation P whose orientation does not rotate in response to an external magnetic field. Generally, as part of the manufacturing process of the ...

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Abstract

An asymmetric clad conductor structure for a magnetic field sensitive memory cell is disclosed. One or both of the conductors that cross the memory cell can include an asymmetric cladding that covers a top surface and only a portion of the opposed side surfaces of the conductors such that the cladding on the opposed side surfaces is recessed along those opposed side surfaces in a direction away from a data layer of the memory cell. The cladding is recessed by an offset distance. The asymmetric cladding increases a reluctance Rg of a closed magnetic path with a resulting decrease in magnetic coupling with the data layer. An aspect ratio AR of the memory cell can be reduced thereby increasing areal density.

Description

Technical field [0001] The present invention generally relates to a magnetic storage device in which at least one conductor includes an asymmetric coating. More specifically, the present invention relates to a magnetic memory device, in which at least one conductor includes a recessed asymmetric cladding layer, while providing a reversal magnetic field enhancement, will affect the reversal characteristics of the data layer of the magnetic memory cell. The adverse effects are minimized. Background technique [0002] Magnetic random access memory (MRAM) is an emerging technology that can provide an alternative to traditional data storage or memory technology. MRAM has required properties, such as fast access time like DRAM and non-volatile data retention like hard disk drives. MRAM stores one bit of data (ie, information) in a patterned thin film magnetic element in the form of variable magnetization orientation, which is called a data layer, storage layer, free layer or data film....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15H01L43/00H01L27/105H01L21/8246H01L27/22H01L43/08
CPCH01L27/222G11C11/15H01L2924/0002H10B61/00H01L2924/00
Inventor M·K·巴塔查里亚T·C·安东尼
Owner SAMSUNG ELECTRONICS CO LTD