Solid-state imaging device
A solid-state imaging device and semiconductor technology, which is used in radiation control devices, image communications, electrical solid-state devices, etc., can solve the problems of small capacity, small charge, low sensitivity characteristics of solid-state imaging devices, etc., to suppress reverse current, increase The amount of signal charge and the effect of increasing the light-receiving area
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no. 1 example
[0035] figure 1 is a schematic plan view of a solid-state imaging device in which elements are isolated by the STI method. Such as figure 1 The illustrated solid-state imaging device includes photodiodes 20a and 20b and a high-voltage transistor 70, and these elements are isolated by element isolation portions 33a and 33b. The high voltage transistor 70 includes gate electrodes 60 and 61, a source diffusion layer 40a, a drain diffusion layer 40b, and a contact portion 101 for contacting an upper conductive layer. The element isolation portion 33 a separates the photodiode 20 a and the photodiode 20 b between the two, and the element isolation portion 33 b separates the photodiode 20 a and the high-voltage transistor 70 .
[0036] figure 2 is along figure 1 A cross-sectional view of the solid-state imaging device taken along the line W-X-Y-Z shown. The structure of the solid-state imaging device of the first embodiment of the present invention will be referred to fig...
no. 2 example
[0059] In this embodiment, a solid-state imaging device having a structure capable of preventing color mixing due to signal charges generated even in a deep portion of a substrate will be described. The solid-state imaging device of this embodiment has basically the same structure as that of the first embodiment, so only the differences therebetween will be described below.
[0060] Figure 5A is a schematic diagram showing a cross-sectional structure of a solid-state imaging device according to a second embodiment of the present invention. Figure 5B is to mean along Figure 5A Schematic diagram of the energy distribution of line C-D in the solid-state imaging device shown. exist Figure 5A Among them, the semiconductor substrate 10 is composed of a P-type semiconductor layer 11a located on the surface, a P-type semiconductor layer 11a formed under this layer + type semiconductor layer 11b and a P-type semiconductor layer 11c at the bottom. In this example, P + The semi...
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