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Susceptor

A susceptor and substrate technology, applied in the field of susceptors, can solve the problems that it is difficult to obtain multiple epitaxial films with the same quality at the same time, the temperature difference of the substrate, and the thickness of the epitaxial film are different.

Inactive Publication Date: 2009-03-11
TOYO TANSO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the conventional apparatus, there is a large difference in the distance between the plurality of substrates on the susceptor and the wall facing these substrates, so temperature differences tend to occur among the substrates.
Therefore, there is a difference in the growth rate of the epitaxial film between the substrates, so that the thickness of the epitaxial film is different, and it is difficult to obtain multiple epitaxial films with the same quality at the same time.

Method used

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Examples

Experimental program
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Embodiment approach

[0038] figure 1 It is a perspective view which respectively shows the structural part of the susceptor of 1st Embodiment of this invention, (a) is a cylindrical inner susceptor, (b) is an outer member.

[0039] figure 1 The shown susceptor 1 includes: an inner susceptor 2 using graphite as a base material, and an outer member 3 using graphite as a base material. Their surfaces are preferably coated with polycrystalline silicon carbide or polycrystalline tantalum carbide.

[0040] The inner setter 2 is formed by inclining four trapezoidal planes (all four trapezoidal planes have the same area) with respect to the vertical direction at a predetermined angle to connect the hypotenuses to each other. It is a so-called cylindrical susceptor.

[0041] The outer part 3 is roughly similar in shape to the inner susceptor 2, and the inner susceptor 2 can be arranged inside. In addition, it has four trapezoidal planes (the areas of the four trapezoidal planes are all the same), and th...

Embodiment

[0065] Here is an example of epitaxial layer formation using a cylindrical gas-phase reaction device that uses a six-sided cylindrical susceptor (not shown) instead of figure 1 Four-sided cylindrical susceptor 1. Here, the epitaxial layer formation of silicon carbide, which is one of compound semiconductors, will be described.

[0066] Single-crystal silicon carbide wafers each having a diameter of 2 inches were placed in each counterbore provided on the inner surface of the six-sided cylindrical susceptor, and the susceptor was set at a predetermined position. with H 2 After the gas replaces the gas in the reaction chamber, it is pumped into 5×10 -6 Torr's Vacuum. After evacuation, introduce H as a carrier gas from a source gas supply port (not shown). 2 As an inert gas, Ar gas was introduced from an inert gas supply port (not shown), and the reaction chamber was maintained at 100 Torr. h 2 Ar gas and Ar gas are continuously discharged from an exhaust port (not shown), ...

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Abstract

A susceptor used for semiconductor epitaxial growth, by which a plurality of highly uniform epitaxially grown films can be obtained at the same time. The susceptor is used for semiconductor epitaxial growth, and is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the external side, and a member, which has the barrel-type susceptor inside and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction. Alternatively, the susceptor is composed of a barrel-type susceptor, which has a plurality of planes whereupon a plurality of substrates can be freely placed on the inner side, and a member, which has the barrel-type susceptor on the outer circumference part and has planes arranged to face each of the planes of the barrel-type susceptor by inclining in the same direction.

Description

technical field [0001] The present invention relates to a kind of susceptor used when epitaxially growing compound semiconductors such as silicon carbide, gallium nitride, aluminum nitride, etc. Susceptor for epitaxial film). Background technique [0002] Conventionally, in the semiconductor manufacturing process, a single crystal manufacturing method is used, that is, a chemical vapor phase growth method (CVD method) is used to cause a gas phase reaction of raw material gases on a wafer to grow an epitaxial layer. Specifically, the CVD method refers to placing a single wafer on a susceptor, heating the susceptor and the wafer to an epitaxial growth temperature, and maintaining the temperature. Then, a mixed gas of a carrier gas and a source gas is introduced into the reaction furnace, and the source gas decomposed by the high temperature is accumulated on the wafer to form an epitaxial layer. As a reaction furnace for forming a thick epitaxial layer at high speed, a verti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/458H01L21/68C30B25/12C30B31/14H01L21/00H01L21/683
CPCH01L21/68785H01L21/68771C30B31/14C30B25/12H01L21/67103C23C16/4588H01L21/68757
Inventor 木本恒畅松波弘之藤原广和
Owner TOYO TANSO KK