Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor
A chemical vapor deposition, vertical reactor technology, applied in chemical instruments and methods, from chemical reactive gases, gaseous chemical plating, etc., can solve the problem of poor uniformity of epitaxial growth of wafers, limited aluminum composition, packaging The problems such as troublesome filming and taking of the film are achieved, and the effect of low cost, simple structure, convenient disassembly and cleaning is achieved.
Inactive Publication Date: 2009-04-08
MAANSHAN JASON SEMICON CO LTD
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Problems solved by technology
[0012] The invention provides a gallium nitride metal-organic vapor deposition method equipment with an ultra-high vertical reactor, which can solve the problems in the prior art that the aluminum component of the growth material is limited, and the uniformity of the epitaxial growth of the wafer is relatively low. Poor, problems such as loading and unloading film
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[0040] See Figure 4 , Figure 5 with Figure 6 ,
[0041] The gallium nitride metal organic vapor deposition method equipment of the ultra-high vertical reactor of the present invention is mainly composed of:
[0042] ①Top gas chamber; ②Reactor, ③Reactor base and ④Transmission mechanism.
[0043] Detailed descriptions are given below.
[0044] ①Top gas chamber: mainly includes gas mixing chamber 1-5; upper pipe seat 1-6; top sealing seat and infrared thermometer 1-7 and other parts;
[0045] NH 3 The gas and MO gas enter the top of the gas mixing chamber 1-5 through the gas inlet pipe 1-1, the lower seat 1-2 of the gas joint, and the upper seat 1-3 of the gas joint respectively. There are many small holes at the bottom of the gas mixing chamber 1-5, and the mixed gas flows from these small holes to the reaction chamber 2-11 below; because the graphite base 2-2 located in the center of the reaction chamber 2-11 is heated when it is heated. The generated heat radiation will increase ...
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The present invention provides a high vertical reactor GaN metal-organic chemical vapor deposition method equipment, which can solve the existing technologies of the growth of high-alumina materials group were limited, and other issues. The invention of the technology programme, which covers the reactor tube the ratio of D / H in between 0.16 -0.5. Because of the high degree of control and a significant increase compared with the existing technology, the gas from heating vents in the graphite blocks from the extended response from indoor heating can be avoided in the high temperature thermal radiation, which can epitomical growth of high-alumina group GaN materials, experiments show that the growth of the group Al materials up to 85%.
Description
Technical field [0001] The invention relates to optoelectronics and microelectronics technology, in particular to gallium nitride-based metal organic vapor deposition method epitaxial growth equipment. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD) is currently the world's most advanced method for preparing electronic thin film materials. It is a new technology for preparing compound semiconductor flake single crystals proposed by Rockwell Company in 1968. The technology uses organic compounds of group III and group II elements and hydrides of group V and VI elements, etc. Growth source material, vapor phase epitaxy on the substrate by thermal decomposition reaction, growth of III-V group, II-VI group compound semiconductors and thin films of their multiple solid solutions. [0003] After the development from the 1970s to the 1980s, the 1990s has become the core growth technology for the preparation of epitaxial wafers of optoelectronic materials su...
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IPC IPC(8): C30B25/00C23C16/00
Inventor 张国华
Owner MAANSHAN JASON SEMICON CO LTD