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Method for manufacturing semiconductor devices using a photo acid generator

A photoacid generator, semiconductor technology, used in semiconductor/solid-state device manufacturing, optics, electrical components, etc.

Active Publication Date: 2009-06-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a method for manufacturing a semiconductor component, using a photoacid generator to manufacture a semiconductor component, so as to solve the problems in the prior art

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  • Method for manufacturing semiconductor devices using a photo acid generator
  • Method for manufacturing semiconductor devices using a photo acid generator
  • Method for manufacturing semiconductor devices using a photo acid generator

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Embodiment Construction

[0022] The ensuing disclosure provides several different embodiments to illustrate the various features of the invention, and to simplify the invention with specific examples of compositions and arrangements as described below. Of course, this is just an example and not intended to limit the present invention. In addition, the disclosed content may repeat symbols and / or letters in different embodiments, which is for the purpose of simplification and clarity of content, and does not mean that there is a relationship between different embodiments and / or structures. In addition, the disclosure hereinafter describes the formation of a first feature over a second feature, which may include using the first and the second features to form in direct contact, or may include forming between the first and the second features. Additional features such that the first and the second features are not in direct contact.

[0023] Such as Figure 1a-1c As shown, lithography steps with differe...

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Abstract

The invention discloses a method for manufacturing a semiconductor component by using a photoacid generator. The method includes providing a substrate, and forming a lithographic laminate structure on the substrate, the lithographic laminate structure comprising a first photoacid generation layer and a photoresist layer, wherein the first photoacid generation layer includes at least one photoacid generator. With the method of the present invention, some of the problems of the prior art due to the lithography step are avoided.

Description

technical field [0001] The invention relates to a method for manufacturing semiconductor components, in particular to a method for manufacturing semiconductor components by using a photoacid generator. Background technique [0002] Semiconductor technology frequently utilizes a photolithography step in the manufacture of a semiconductor device. In a lithography step, an appropriate depth of focus (DOF) range, ie, a distance along an optical axis to confirm that a feature of a semiconductor device is in focus, is a factor that needs to be considered. An effective DOF is applicable to different variations of photoresist thickness, local substrate topology step height, and step height difference between the center and edge of the wafer. Therefore, an efficient DOF enables a semiconductor device to be fabricated within a critical dimension (CD) without scumming (eg, insufficient development), top loss defects, or other problems. However, certain DOF-related problems occur due ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/027
CPCG03F7/091G03F7/095
Inventor 施仁杰
Owner TAIWAN SEMICON MFG CO LTD