Plasma etching system

Abstract

A plasma etching system, comprising a closed plasma chamber, in which compound gas is injected, and the first electrode plate and the second electrode plate respectively electrically connected to the first power supply end and the second power supply end are arranged on the two sides of the inside , the plasma chamber is connected in parallel with a grounded conductive sieve plate between the two electrode plates, a base for placing a substrate to be etched is provided in the plasma chamber, and the two power supply terminals provide different voltages to the two electrode plates respectively, and After the two electrode plates discharge the composite gas, they are dissociated into plasma gas molecules that collide irregularly in the plasma chamber, which are guided by the conductive sieve plate and pass through the multiple layers arranged on the conductive sieve plate. A sieve hole can be uniformly impacted on a thin film on the surface of the substrate, and the surface of the substrate is subjected to plasma etching treatment. By controlling the common distance between the conductive sieve plate and the substrate, the plasma gas molecules can be more uniformly impacted on the substrate. The surface of the substrate forms a relatively uniform etching effect on the surface of the substrate.

Description

technical field [0001] The present invention relates to a plasma etching system. A grounded conductive sieve is installed in parallel between a first electrode plate and a second electrode plate in a closed plasma chamber. The conductive sieve can guide The plasma gas molecules generated after the discharge of the first electrode plate and the second electrode plate collide with the surface of a substrate uniformly, and the surface of the substrate is subjected to plasma etching treatment to solve the problem of the plasma gas molecules The disadvantage of uneven etching of large-sized substrates. Background technique [0002] Nowadays, our life is entering an information age where the electronic industry is booming. Various multimedia electronic products are being introduced rapidly, which has indeed brought more choices for human entertainment and leisure development. However, with the current various electronic technologies The screens and display devices of related elec...

AI Technical Summary

Problems solved by technology

[0003] Generally speaking, the size of an LCD flat panel display (FPD) is usually 1,000-1,200 mm x 1,200-1,500 mm, and in the near future, the glass substrate in the LCD flat panel display is more likely to exceed each 2,500 mm on a side, due to the manufacturing technology of the LCD flat panel display, please refer to figure 1 As shown, one of the steps is to use a plasma gas 400 between the two electrodes 100 and 200 to form a thin film on the surface of a glass substrate 300 (such as: Silicon Nitride, referred to as SiN or amorphous silicon, referred to as a- Si) is processed by plasma etching, but the manufacturer has a lot of bottlenecks and limitations in the process of plasma etching, because the plasma gas 400 is on the large-sized glass substrate 300 In this case, since the plasma gas 400 etches the large glass substrate 300 in a wide range, each molecule in the plasma gas 400 cannot bombard the middle and both ends of the large glass substrate 300 to the extent that it can consistent, the plasma gas 400 cannot uniformly etch the large glass substrate 300; in other words, please refer to figure 2 As shown, when the plasma gas 400 is between two electrodes 100 and 200 with different voltages (or frequencies), the impedance generated by the concentration in the center is greater than the impedance generated by both ends. Therefore, the plasma gas 400 The molecules in the plasma gas 400 cannot maintain a certain concentration between the two electrodes 100 and 200, and the plasma etching effect of the molecules of the plasma gas 400 on any position on the surface of the glass substrate 300 is also inconsistent. The time for plasma etching treatment of the glass substrate 300 is used to enhance the plasma etching effect of the glass substrate 300 on the part with a weaker concentration of the plasma gas 400 . Part of it wears through and destroys the original etching plan on the glass substrate 300

[0004] Therefore, the manufacturing technology of large-scale glass substrates for LCD flat-panel displays is currently facing a major challenge. The traditional solution is to use the principle that the gap (Gap) is proportional to the impedance (Impedance). Please refer to image 3 As shown, the distance between an electrode 100 and the two ends of the glass substrate 300 is shortened or the distance between the electrode 100 and the center of the glass substrate 300 is increased, so that the plasma gas 400 is in the center of the two electrodes 100, 200 as much as possible. The impedance produced by the concentration is close to the impedance produced by the plasma gas 400 at both ends of the two electrodes 100, 200, in order to achieve the consistency of the etching efficiency of the plasma gas 400 to the glass substrate 300. However, in this way, first It is necessary to bend the electrode 100 so that the center and both ends of the electrode 100 form unequal distances from the glass substrate 300, but the curvature required to bend the electrode 100 cannot be ideally realized.

Images