Method for producing wide-spectral band wide super-radiation light-emitting diode and diode thereof
A superluminescence and diode technology, which is applied to lasers, phonon exciters, laser components, etc., can solve the problems of complex process, limited contribution to increase spectral bandwidth, and limited spectral increase width, so as to increase spectral bandwidth and improve The effect of yield rate and simple process
Inactive Publication Date: 2009-07-29
GUANGXUN SCI & TECH WUHAN
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But this method itself has certain limitations, because in the active region, the long-wavelength material will absorb the spontaneous emission light of the short-wavelength material, so that the luminous intensity of the superluminescent light-emitting diode is reduced, and its spectral increase width is also limited.
The second method is to epitaxially grow several active region materials with different light-emitting center wavelengths along the direction of the current injection strip region of the light-emitting tube, but this method requires multiple epitaxial growth and photolithography processes, and the process is complicated
At the same time, in the superluminescent light-emitting diodes using the above various methods, it is difficult to achieve a balanced gain of each wavelength within the entire bandwidth of the luminescent spectrum.
In addition, there is also a method to increase the spectral bandwidth by using the mixed strain of the quantum well in the active region, but this method has limited contribution to the increase of the spectral bandwidth because the strained quantum well is limited by the critical thickness.
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[0019] The invention is applicable to all semiconductor superluminescent light-emitting diodes with double heterojunction structure; it is applicable to various material systems, such as InGaAsP / InP materials, AlGaInAs / InP materials, AlGaAs / GaAs and other material systems.
[0020] The novel superradiant light-emitting diode of the present invention belongs to semiconductor heterojunction light-emitting tubes, and a multi-layer heterostructure is epitaxially grown on a semiconductor substrate in sequence, including a buffer layer, a lower cladding layer, an active layer, an upper cladding layer, and a cap in sequence. Layer and current injection strip region; the active region is divided into several adjacent sections along the direction of the current injection strip region, and is produced by one-time epitaxial growth by the method of selective area growth. There is a lower electrode on the lower surface of the substrate, and an upper electrode on the current injection bar ar...
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The invention relates to a manufacturing method of a super-radiant light-emitting diode with a wide spectral bandwidth and the diode. Its active region consists of two or more segments, is manufactured by a selective region epitaxial growth method, and has a band gap structure in a gradient distribution. Along a certain light-emitting direction of the luminous tube, the luminous wavelength of the active region far away from the light-emitting end face is greater than the luminous wavelength close to the end face, and the light transmitted along this direction can be transmitted transparently, so the light-emitting spectrum width of the light-emitting diode in this direction is along The multi-segment spectral width of the active region in this direction is superimposed, so as to achieve the purpose of increasing the spectral bandwidth of the light-emitting diode; at the same time, the light transmitted along the direction opposite to the light-emitting end face is absorbed.
Description
technical field [0001] The invention relates to a method for manufacturing a superradiant light-emitting diode with a wide spectral bandwidth and the diode thereof. Specifically, it is a superradiant light-emitting diode with a wide spectral bandwidth and a low spectral modulation depth, which is widely used in fields such as fiber optic gyroscopes and fiber optic sensors. . Background technique [0002] Semiconductor superluminescent light-emitting diode is a kind of spontaneous emission one-way optical amplification device, which has the characteristics of wide spectrum and short coherence length, and is widely used in the fields of fiber optic gyroscope and fiber optic sensing. [0003] In the application of fiber optic gyro, the short optical coherence length can reduce the Rayleigh scattering intensity in the fiber optic gyro system; and the optical coherence length LC of semiconductor superluminescent light-emitting diode = λ 2 / Δλ, where Δλ is the spectral width and ...
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IPC IPC(8): H01L33/00H01S5/00
Inventor 江山王定理张军刘应军
Owner GUANGXUN SCI & TECH WUHAN