Film formation apparatus and method of using the same

Abstract

The present invention provides a method of using a film forming apparatus for semiconductor processing, comprising the steps of removing by-product films adhering to the inner surface of the reaction chamber of the film forming apparatus with a purge gas, and applying a planarization gas to the reaction chamber. The inner surface is chemically planarized. The inner surface of the reaction chamber is mainly composed of a material selected from quartz and silicon carbide. In the removing step, while supplying the purge gas into the reaction chamber, the reaction chamber is set to a first temperature and a first pressure at which the purge gas is activated. In the planarization step, while supplying the planarization gas into the reaction chamber, the reaction chamber is set to a second temperature and a second pressure at which the planarization gas is activated. The planarization gas includes fluorine gas and hydrogen gas.

Description

[0001] Cross-applications related to this application [0002] This invention is based on Japanese Patent Application No. 2005-338438 filed on November 24, 2005 and Japanese Patent Application No. 2006-279768 filed on October 13, 2006, both of which are referred to in this application Content. technical field [0003] The present invention relates to a film forming apparatus for semiconductor processing for forming a film on a substrate to be processed such as a semiconductor wafer, and a method of using the apparatus. Here, semiconductor processing refers to forming a semiconductor wafer in a predetermined pattern on a substrate to be processed such as a semiconductor wafer and a glass substrate for an FPD (Flat Panel Display) such as an LCD (Liquid Crystal Display: Liquid Crystal Display). Layers, insulating layers, conductive layers, etc., and various processes are performed to manufacture structures including semiconductor devices and wiring and electrodes connected to se...

AI Technical Summary

Problems solved by technology

However, as will be described later, the inventors of the present invention found that after cleaning the inside of the reaction tube, the film formation process may cause problems such as a decrease in the film formation rate (deposition rate) or particle contamination of the product film.

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