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Cleaning method of chemical vapor deposition equipment

A technology for chemical vapor deposition and deposition equipment, which is applied in the internal field of the reactor and can solve the problems of affecting the wafer productivity, reducing the efficiency of cleaning steps, and complicating the system.

Active Publication Date: 2009-10-14
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The main disadvantage of the above technology is that it needs to use additional gases in the cleaning process, such as argon (argon), perfluorinated hydrocarbon (perfluorinated hydrocarbon) gas and oxygen, etc., which makes the system complicated and requires additional processing time
In addition, after completing its so-called "baking" step, and before the standard nitrogen trifluoride cleaning step, the gas inside the reactor needs to be pumped out with a vacuum pump before it can be used in the reactor to be cleaned. Nitrogen trifluoride cleaning gas is introduced, which reduces the efficiency of the overall cleaning step and may affect wafer throughput

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  • Cleaning method of chemical vapor deposition equipment
  • Cleaning method of chemical vapor deposition equipment
  • Cleaning method of chemical vapor deposition equipment

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Embodiment Construction

[0030] As mentioned above, in the chemical vapor deposition process, in addition to depositing the deposition gas molecules on the surface of the wafer, part of the deposition gas molecules will also diffuse to the inner wall of the reactor (usually the inner wall of aluminum) and contact or react with it Finally, the deposits adhere to the inner wall of the reactor, forming deposit residues with gradually accumulated thickness. When the thickness of the deposition residue accumulates to a certain extent, it is likely to peel off from the inner wall of the reactor or fall on the surface of the wafer being processed, causing particle defects or affecting the quality and uniformity of film deposition.

[0031] In addition, the deposition residue on the inner wall of the reactor may also affect other important process control factors, such as film deposition rate or film strength, etc., and must be taken seriously.

[0032]In order to remove the deposition residues on the inner w...

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Abstract

A cleaning method for deposition equipment, firstly, a fluorine-containing cleaning gas is introduced into the deposition equipment, and the fluorine-containing cleaning gas is maintained in a first pressure state in the deposition equipment. An RF power is provided to ignite the fluorine-containing cleaning gas in the deposition apparatus to generate a plasma gas. After the plasma gas is formed, the plasma gas is maintained in the deposition device for a predetermined time and reaches a first temperature state, and a first-stage internal cleaning of the deposition device is performed. turning off the RF power to stop generating the plasma gas, and then introducing a remote plasma gas containing fluorine radicals from a remote plasma supply device into the deposition device at the first temperature , to carry out the second stage of internal cleaning.

Description

technical field [0001] The present invention relates to the field of manufacturing semiconductor elements, in particular to a method for efficiently and uniformly cleaning the inside of a reactor of a chemical vapor deposition (chemical vapor deposition, CVD) device. Background technique [0002] The chemical vapor deposition process plays a very critical and heavy role in the semiconductor process. It is mainly used to deposit various material films on the surface of the semiconductor wafer, such as silicon dioxide (silicon dioxide), silicon nitride (silicon nitride) etc. These material films may be used as insulating dielectric layers or protective layers of integrated circuits. As known to those skilled in the art, during the process of depositing a thin film, some pollutants will gradually accumulate or adhere to the inner wall of the chemical vapor deposition reactor. This is mainly because the deposition reaction gas is not only deposited on the wafer surface but also...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/513C23F1/24B08B3/00
Inventor 赖建兴王俊宜
Owner UNITED MICROELECTRONICS CORP